| Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247) |
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| 04/19/2011 | CA2451299C Nickel-base superalloy composition and its use in single-crystal articles |
| 04/14/2011 | WO2011043777A1 Crystal growth apparatus and method |
| 04/14/2011 | US20110084210 Process for producing a particularly strong scintillation material, a crystal obtained by said process and uses thereof |
| 04/13/2011 | CN201793805U High-temperature microwave silicon material smelting furnace |
| 04/13/2011 | CN201793804U Thermal insulation device for growth of crystal |
| 04/13/2011 | CN201793803U Temperature control device for photovoltaic polysilicon ingot furnace |
| 04/13/2011 | CN102011195A Preparation method of directional solidification high-Nb TiAl alloy single crystal |
| 04/13/2011 | CN102011187A Bismuth silicate-germanate mixed crystal and preparation method thereof |
| 04/13/2011 | CN102011173A Equipment for growing sapphire single crystal |
| 04/12/2011 | USRE42279 Method of preparing a compound semiconductor crystal |
| 04/07/2011 | DE102009043003A1 Herstellung von Seltenerd-Aluminium- oder -Gallium-Granat-Kristallen aus einer fluoridhaltigen Schmelze sowie ihre Verwendung als optisches Element für die Mirolithographie sowie als Szintillator Production of rare earth-aluminum or gallium-garnet crystals from a fluoride-containing melt as well as its use as an optical element for the Miro lithography and as a scintillator |
| 04/07/2011 | DE102009043002A1 Method for growing a single crystal, comprises producing a melt from a mixture containing aluminum-garnet and/or gallium-garnet and/or a rare earth element and/or a mixture of metal oxides |
| 04/06/2011 | EP2304804A2 Germanium-enriched silicon material for making solar cells |
| 04/06/2011 | EP2304365A1 Thermal insulation system having variable thermal insulating capacity and the use thereof, and apparatus and method for producing monocrystalline or multicrystalline or vitreous materials |
| 04/06/2011 | EP1485956B1 Process of producing multicrystalline silicon substrate and solar cell |
| 04/06/2011 | CN102002752A Process method for growing bismuth boronate crystals |
| 04/06/2011 | CN101048539B Single crystal wire and manufacturing method of the same |
| 03/31/2011 | WO2011009062A3 Coated crucibles and methods for preparing and use thereof |
| 03/31/2011 | US20110076217 Process for growing rare earth aluminum or gallium garnet crystals from a fluoride-containing melt and optical elements and scintillation made therefrom |
| 03/30/2011 | EP2302108A1 Nanostructures and methods for manufacturing the same |
| 03/30/2011 | CN201778142U Directional solidification furnace with improved gas circuit |
| 03/30/2011 | CN101999013A Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell |
| 03/30/2011 | CN101994150A Method for deciding directional solidification primary dendrite arm spacing by controlling temperature gradient |
| 03/29/2011 | US7915151 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 03/24/2011 | WO2011033188A1 Low pressure device for melting and purifying silicon and melting/purifying/solidifying method |
| 03/24/2011 | WO2011032594A1 Apparatus and method for crystallization of silicon |
| 03/24/2011 | DE102009041444A1 Producing pure silicon, comprises subjecting molten silicon to a purification step in a directional solidification, heating molten silicon by bath surface, removing molten silicon from a warmed heatsink, and controlling solidification rate |
| 03/24/2011 | CA2774176A1 Apparatus and method for crystallization of silicon |
| 03/23/2011 | EP2298968A2 Method for growing nanowires |
| 03/23/2011 | CN101323978B Large size sapphire crystal preparing technology and growing apparatus thereof |
| 03/22/2011 | US7911035 Directionally controlled growth of nanowhiskers |
| 03/22/2011 | US7911009 Nanosensors |
| 03/22/2011 | US7910492 Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them |
| 03/16/2011 | EP2294005A2 Skull reactor |
| 03/16/2011 | CN201762479U Directional solidification furnace provided with heat prevention part on bottom end of side wall of crucible |
| 03/16/2011 | CN201762478U Coating quartz crucible for polycrystalline silicon ingot casting |
| 03/16/2011 | CN101985775A Ternary system relaxation ferroelectric single crystal material and preparation method thereof |
| 03/15/2011 | US7905958 Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device |
| 03/10/2011 | WO2011028787A1 High-temperature process improvements using helium under regulated pressure |
| 03/10/2011 | WO2011027992A2 Method and apparatus for growing a sapphire single crystal |
| 03/10/2011 | WO2010105617A4 Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component |
| 03/10/2011 | DE102009039070A1 Removing impurities from a melt, comprises providing a crucible with a melt of non-ferrous metal or semiconductor material, directionally solidifying the melt to form solidified block, and removing a portion of residual melt from crucible |
| 03/09/2011 | EP2291552A2 Direct silicon or reactive metal casting |
| 03/09/2011 | CN1942783B Scintillator material based on rare earth with a reduced nuclear background |
| 03/03/2011 | WO2011025468A1 Process for production of multicrystalline silicon ingots by induction method |
| 03/03/2011 | US20110048316 High-Temperature Process Improvements Using Helium Under Regulated Pressure |
| 03/02/2011 | CN101982568A Method for growing strontium iodide scintillating crystals by nonvacuum crucible descent method |
| 02/24/2011 | DE10339402B4 Schmelzvorrichtung mit einem Schmelztiegel sowie Verfahren zum Zuführen von Granulat in eine im Schmelztiegel vorhandene Schmelze Melter with a crucible and method of feeding pellets into an existing melt in the crucible |
| 02/23/2011 | EP2286005A2 System and process for the production of polycrystalline silicon for photovoltaic use |
| 02/23/2011 | CN101979718A Quartz crucible and method for casting quasi-single crystal |
| 02/22/2011 | US7892370 Heat treatment method for monocrystalline or directionally solidified structural components |
| 02/17/2011 | US20110036395 Methods for forming nanostructures and photovoltaic cells implementing same |
| 02/16/2011 | CN101978103A System and method for arranging heating element in crystal growth apparatus |
| 02/10/2011 | WO2011017392A1 Vertically-aligned nanopillar array on biaxially-textured substrates for nanoelectronics and energy conversion applications |
| 02/09/2011 | EP1968890B1 Method for the production of silicon suitable for solar purposes |
| 02/09/2011 | CN1965112B III group nitride crystal and method for preparation thereof, and III group nitride crystal substrate and semiconductor device |
| 02/09/2011 | CN101970351A Apparatus including a plasma torch for purifying a semiconductor material |
| 02/09/2011 | CN101967675A Device for manufacturing single crystal ingots |
| 02/09/2011 | CN101319386B Preparation method of KTP crystal with anti-soil performance |
| 02/08/2011 | US7883997 Solid-phase sheet growing substrate and method of manufacturing solid-phase sheet |
| 02/03/2011 | WO2011014493A1 Thermal strain relief device for high temperature furnace |
| 02/03/2011 | WO2011014077A1 Crucible |
| 02/03/2011 | US20110026103 Crystal for optical conversion |
| 02/03/2011 | DE102009034317A1 Producing an ingot made of upgraded metallurgical-grade silicon for penetration-resistant p-type solar cells, where the ingot has a height originating from a bottom with p-type silicon to a head with n-type silicon |
| 02/03/2011 | DE102009034145A1 Producing an ingot made of multicrystalline silicon after a vertical-gradient-freeze-process, comprises a crucible for filling with pieced or granulated silicon, and a heating device for heating the crucible to cool the filled silicon |
| 02/02/2011 | EP2279817A1 Directionally solidified elongated component with elongated grains of differing widths |
| 02/02/2011 | CN101962810A Single crystal LiGa3Te5 as well as preparation method and application thereof |
| 02/02/2011 | CN101962809A Process for growing lead tungstate crystal by vertical gradient solidification method |
| 02/02/2011 | CN101962800A Device for producing single crystal ingot by directional solidification method |
| 02/02/2011 | CN101962799A Crystal growth speed automatic measurement device for photovoltaic polycrystalline silicon ingot casting furnace |
| 02/02/2011 | CN101962798A Method and equipment for producing sapphire single crystal |
| 01/27/2011 | WO2011010982A1 Apparatus for producing multicrystalline silicon ingots by induction method |
| 01/27/2011 | WO2011010724A1 Method and device for manufacturing semiconductor crystal, and semiconductor crystal |
| 01/27/2011 | US20110017937 Relaxor-pt ferroelectric single crystals |
| 01/27/2011 | US20110017124 Method and equipment for producing sapphire single crystal |
| 01/26/2011 | EP2278050A1 Method and equipment for producing sapphire single crystal |
| 01/26/2011 | EP2276878A1 Method for producing doped gallium arsenide substrate wafers with a low optical absorption coefficient |
| 01/26/2011 | EP1562859B1 Method for preparing monolithic hydrated aluminas and composite materials |
| 01/26/2011 | CN101956229A Method for producing finished rod products with large charging capacity |
| 01/26/2011 | CN101956228A Multi-crucible fused mass growth technique of lithium aluminate and doped lithium aluminate crystal |
| 01/26/2011 | CN101956108A Method for controlling primary dendritic spacing during directional solidification by adding rare earth Ce |
| 01/26/2011 | CN101956107A Method for controlling primary dendrite arm spacing of directional solidification by adding composite rare earth |
| 01/26/2011 | CN101954475A Liquid metal cooling and directional condensing equipment with tin boiler stirrer |
| 01/26/2011 | CN101074488B Device and method for manufacturing crystal or polycrystal material especially polysilicon |
| 01/25/2011 | US7875536 Nanostructures formed of branched nanowhiskers and methods of producing the same |
| 01/25/2011 | US7875118 Crystallization method and crystallization apparatus |
| 01/20/2011 | WO2011009062A2 Coated crucibles and methods for preparing and use thereof |
| 01/20/2011 | US20110012235 Method of growing group iii nitride crystal, group iii nitride crystal grown thereby, group iii nitride crystal growing apparatus and semiconductor device |
| 01/20/2011 | US20110011332 Method and apparatus for producing large, single-crystals of aluminum nitride |
| 01/19/2011 | CN101952489A Device and method for preparing crystalline bodies by directional solidification |
| 01/19/2011 | CN101949056A Directional solidification furnace with heat preservation part at bottom of side wall of crucible |
| 01/19/2011 | CN101949055A Multi-axis synchronous lifting device of thermal-insulation cover of photovoltaic polycrystalline silicon ingot casting furnace |
| 01/19/2011 | CN101278078B Crucible for crystallizing silicon and producing method thereof |
| 01/18/2011 | US7871590 Mass of silicon solidified from molten state and process for producing the same |
| 01/13/2011 | WO2010105617A3 Crucible for melting and crystallizing a metal, a semiconductor, or a metal alloy, component for a crucible base body of a crucible, and method for producing a component |
| 01/12/2011 | EP2271795A1 System and method for arranging heating element in crystal growth apparatus |
| 01/12/2011 | CN101942692A 高温微波硅材料熔炼炉 High-temperature microwave silicon material melting furnace |
| 01/12/2011 | CN101525706B Modification method for enhancing high-temperature creep resistance in nickel-base single crystal superalloy |
| 01/11/2011 | US7867334 Silicon casting apparatus and method of producing silicon ingot |
| 01/06/2011 | US20110000424 Method for the crystallogenesis of a material electrically conducting in the molten state |