Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
06/2011
06/29/2011CN102108555A High-temperature perfect oxidation resistance type nickel-based single-crystal alloy and preparation method thereof
06/29/2011CN102108551A Rare-earth niobate- and tantalite-doped Re'xRE1-xNbyTa1-yO4 luminous material and melt method crystal growth method thereof
06/29/2011CN102108544A Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface
06/29/2011CN102108543A Multi-stage side heater in vertical gradient freezing crystal growing furnace
06/29/2011CN102108542A Automatic pressure stabilizing system in single-crystal growing system by vertical gradient freeze technique
06/29/2011CN102108541A Raw material corrosion equipment system applied to gallium arsenide single crystal growth by vertical gradient freeze method or vertical bridgman method
06/29/2011CN101545133B Method for growing rare-earth ferrite magneto-optical crystal
06/23/2011WO2011072675A1 Production method and production device for producing a crystal body from a semiconductor material
06/23/2011US20110147589 Room temperature aluminum antimonide radiation detector and methods thereof
06/23/2011US20110146566 System and method for crystal growing
06/22/2011EP2336400A2 CdTe single crystal and CdTe polycrystal, and method for producing the same
06/22/2011EP2336398A1 Single crystal scintillator material, method for producing same, radiation detector and pet system
06/22/2011EP2334848A1 Method for making side growth semiconductor nanowires and transistors obtained by said method
06/22/2011EP2334847A1 Directional solidification furnace for reducing melt contamination and reducing wafer contamination
06/22/2011EP1690284B1 Method of production of silicon carbide single crystal
06/22/2011CN201873774U Horizontal synthetic furnace for synthesizing gallium arsenide (GaAs) semiconductor
06/22/2011CN101498040B K3B6O10 Br nonlinear optical crystal, preparation and use
06/22/2011CN101328604B Manufacturing method of large size special-shaped thin wall molybdenum crucible and special hot pressing furnace
06/21/2011US7964036 Crystallization apparatus and crystallization method
06/21/2011US7964035 Crystallization apparatus and crystallization method
06/16/2011WO2011071857A1 High throughput recrystallization of semiconducting materials
06/16/2011DE102009044390A1 Producing a semiconductor crystal body, useful as a substrate material for solar cells, comprises providing melt of semiconductor material in crucible, and generating crystal body from melt by gradually crystallizing semiconductor material
06/16/2011DE102008035439B4 Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen An apparatus for producing crystals of electrically conductive melting
06/15/2011CN102094245A Selenium-gallium-aluminum-barium compound, selenium-gallium-aluminum-barium nonlinear optical crystal and preparation methods and applications of compound and nonlinear optical crystal
06/15/2011CN102094233A Device for preparing polycrystalline silicon ingots with directional solidification microstructures
06/15/2011CN102094232A Polycrystal furnace thermal field with rapid cooling and using method thereof
06/09/2011WO2011069027A1 Method of exocasting an article of semiconducting material
06/09/2011WO2011067201A1 Device for holding silicon melt
06/09/2011WO2011009062A4 Coated crucibles and methods for preparing and use thereof
06/09/2011DE102008029951B4 Wärmeisolationsanordnung für Schmelztiegel und deren Verwendung sowie Vorrichtung und Verfahren zur Herstellung von ein- oder multikristallinen Materialien Heat insulation arrangement for crucible and its use, and apparatus and method for producing single or multi-crystalline materials
06/08/2011CN102089467A Method for producing doped gallium arsenide substrate wafers with a low optical absorption coefficient
06/07/2011US7956427 Nanosensors
06/03/2011WO2011064391A1 Device for monitoring the progress of crystallization of a bath of molten material in a directional solidification process employing ultrasound
06/03/2011WO2011064390A1 Ultrasonic waveguide device suitable for use in a directional solidification furnace for silicon
06/03/2011WO2011014493A9 Thermal strain relief device for high temperature furnace
06/02/2011US20110128610 Phenolic configurationally locked polyene bulk single crystals, crystalline thin films and waveguides for electro-optics and thz-wave applications
06/02/2011US20110126758 Germanium enriched silicon material for making solar cells
06/01/2011DE102009046845A1 Kristallisationsanlage und Kristallisationsverfahren Crystallization plant and crystallization processes
06/01/2011CN201850332U Single crystal growth temperature field for gemstone
06/01/2011CN102084037A Systems and methods for growing monocrystalline silicon ingots by directional solidification
05/2011
05/26/2011US20110120365 Process for removal of contaminants from a melt of non-ferrous metals and apparatus for growing high purity silicon crystals
05/25/2011EP2325354A1 Crystallisation assembly and method
05/25/2011EP2324148A1 Apparatus and method of use for casting system with independent melting and solidification
05/25/2011EP2324147A1 High temperature support apparatus and method of use for casting materials
05/25/2011EP2324145A1 Gas recirculation heat exchanger for casting silicon
05/25/2011EP2323784A1 Systems and methods for monitoring a solid-liquid interface
05/25/2011CN201842894U Composite coating quartz crucible for polycrystalline silicon ingot preparation
05/25/2011CN102071469A Directional solidification device with traveling-wave magnetic field generator
05/25/2011CN102071463A Rare earth-doped germanium-gallate RExLn1-xGaGe2O7 luminescent material and melt crystal growth method thereof
05/25/2011CN102071454A Gas cooling device and method used for polycrystalline ingot furnace
05/19/2011US20110114012 Methods for purifying metallurgical silicon
05/18/2011EP1754810B1 Method for producing group iii nitride semiconductor crystal
05/18/2011CN102066623A System and process for the production of polycrystalline silicon for photovoltaic use
05/18/2011CN102061513A Method for preparing large size calcium-rare earth borate crystal
05/18/2011CN102061512A Method for producing a single crystal of silicon by remelting granules
05/18/2011CN102061169A Garnet monocrystal fluorescent material for white light LEDs (light emitting diodes) and preparation method thereof
05/18/2011CN101580272B Lead fluoride crystal co-doped with ytterbium and alkaline and preparation method thereof
05/17/2011US7942970 Apparatus for making crystalline composition
05/12/2011WO2011055672A1 Hybrid silicon wafer
05/12/2011WO2011054864A1 Single crystal welding of directionally solidified materials
05/12/2011DE102005028435B4 Kokille mit Antihaftbeschichtung ihr Herstellungsverfahren und ihre Verwendung Mold with non-stick coating process for their preparation and their use
05/11/2011EP2319089A2 Sheet thickness control
05/11/2011CN102051682A Dysprosium doped lead fluoride crystal and preparation method thereof
05/11/2011CN102051674A Monocrystal ingot manufacturing device
05/11/2011CN102051672A Vertical temperature grade kyropoulos method for growing large-size high-temperature oxide crystals
05/11/2011CN102051670A Continuous discharging device without valve control
05/11/2011CN102051669A Device for zone-melting directional solidification of laser leviation and directional solidification method
05/11/2011CN102051668A 10<5> K/cm temperature gradient directional solidification device and directional solidification method
05/05/2011WO2011050765A1 Method and device for producing a component of a turbomachine
05/05/2011WO2010062735A3 Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
05/05/2011US20110100291 Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
05/05/2011DE112009001167T5 Gießen mit hohem Temperaturgradienten bei dichter Anordnung von gerichtet erstarrten Gussteilen Pour directed at high temperature gradients in high-density array of solidified castings
05/04/2011EP1369708B1 Method of producing an optical member for a projection aligner
05/04/2011CN201817570U Device for manufacturing single crystal ingots through directional solidification method
05/04/2011CN201817569U System for manufacturing single crystal ingots
05/04/2011CN101323980B Large size vanadium sodium borate nonlinear optical crystal, and preparation and use thereof
05/03/2011US7935325 Rare earth-activated aluminum nitride powders and method of making
04/2011
04/28/2011WO2011048474A1 Device for obtaining a multicrystalline semiconductor material, in particular silicon, and method for controlling the temperature therein
04/28/2011WO2011048473A1 Method and device for obtaining a multicrystalline semiconductor material, in particular silicon
04/28/2011DE102009045680A1 Device, useful for producing silicon blocks from a melt by directional solidification, comprises growth chamber with melt absorbable rectangular melt container surrounded from mantle- and cover heating devices, and floor-heating device
04/27/2011EP2313542A1 Systems and methods for growing monocrystalline silicon ingots by directional solidification
04/27/2011CN102031556A Growing process of polycrystalline cast ingot crystals
04/27/2011CN102031419A Nickle-based superalloys and articles
04/27/2011CN102031418A Nickel-based superalloys and articles
04/27/2011CN101525707B Method for reducing tendency of TCP phase precipitation in nickel-base single crystal superalloy
04/26/2011US7931883 Metallurgical grade silicon produced in an electric arc furnace by carbothermal reduction contains <300 ppma boron and >100 ppma phosphorus; refinining by treating with calcium-silicate slag to remove boron 0.2-100 ppma; solidification, acid leaching, melting, directional solidification to an ingot
04/26/2011CA2452542C Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
04/21/2011WO2011045186A1 Method and device for separating argon from a gaseous mixture
04/20/2011EP1813700B1 Apparatus for producing crystals
04/20/2011CN201801630U Automatic crystal growing speed measuring device of photovoltaic polycrystalline silicon ingot production furnace
04/20/2011CN102021652A Rare earth or Bi, Cr and Ti-doped IIA-family rare-earth oxide luminescent material and preparation method thereof
04/20/2011CN102021651A Cerium-doped rare earth borate scintillating crystal and Bridgman preparation method thereof
04/20/2011CN102021646A Thermal field structure of polycrystalline silicon crystal growing furnace
04/20/2011CN102021645A Method for preparing polycrystalline silicon ingot with directional solidification microstructure
04/20/2011CN102021644A Crystal silicon ingot casting furnace thermal field thermal door control device
04/20/2011CN102021643A Method and device for directionally solidifying liquid-solid interface based on alternating magnetic field modulation
04/20/2011CN102021642A Industrial furnace for producing crystalline material ingot
04/20/2011CN102021456A Method for determining directional solidification of once dendritic crystal spacing by controlling crystal growth rate
04/20/2011CN102021455A Method for controlling primary dendritic spacing of directional solidification by adding rare earth La
04/20/2011CN101435108B Large size nonlinear optical crystal lead bromoborate preparation method
1 ... 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 ... 53