Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
07/2008
07/29/2008CA2351322C Method and apparatus for production of a cast component
07/24/2008WO2008086705A1 Crystal producing system used in temperature gradient method by rotating multiple crucibles
07/24/2008WO2008086704A1 Crystal producing system used in bridgman-stockbarger method by rotating multiple crucibles
07/24/2008WO2008065270A3 Method of purifying metallurgical silicon by directional solidification
07/24/2008WO2008044050A3 Nanostructures
07/24/2008WO2007136420A3 Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
07/24/2008US20080173234 Crucible and single crystal growth method using crucible
07/23/2008EP1947221A2 Casting method for polycrystalline silicon
07/23/2008CN101225540A Method for promoting fractional crystallization of mineral crystal by mineral rock melt
07/17/2008US20080169081 Method and apparatus for production of a cast component
07/16/2008EP1945003A1 Directional solidification of a metal
07/16/2008EP1944393A1 Device for ensuring the growth of a semiconductor material
07/16/2008CN101220502A Vertical Bridgman growth furnace and method of optimizing temperature field inside furnace
07/15/2008US7399360 Crucible and method of growing single crystal by using crucible
07/10/2008WO2008081103A2 Crystal growth in a solution in stationary conditions
07/10/2008WO2008080304A1 Crystal producing system containing multiple crucibles used in temperature gradient method
07/10/2008WO2008054840A3 Compositions of doped, co-doped and tri-doped semiconductor materials
07/10/2008US20080163815 Device for producing the growth of a semiconductor material
07/09/2008EP1579018B1 Heating to control solidification of cast structure
07/09/2008CN100400720C Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof
07/08/2008US7396411 Apparatus for manufacturing single crystal
07/02/2008EP1939332A1 Semiconductor crystal, and method and apparatus of production
07/02/2008CN101213328A Crucible for the crystallization of silicon
07/02/2008CN100398701C Method for treating crystal growth raw material
07/01/2008US7393409 Method for making large-volume CaF2 single cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof
06/2008
06/26/2008US20080153261 Method and device for producing semiconductor wafers of silicon
06/26/2008US20080149296 Method and apparatus for production of a cast component
06/26/2008US20080149295 Method and apparatus for production of a cast component
06/26/2008US20080149294 Method and apparatus for production of a cast component
06/26/2008US20080149029 Apparatus and method of crystallizing amorphous silicon
06/26/2008US20080149020 Device and method to producing single crystals by vapour deposition
06/19/2008US20080142926 Directionally controlled growth of nanowhiskers
06/19/2008US20080142784 Nanostructures and methods for manufacturing the same
06/19/2008US20080142186 Method and apparatus for production of a cast component
06/19/2008US20080142185 Method and apparatus for production of a cast component
06/19/2008US20080142182 Method and apparatus for production of a cast component
06/12/2008US20080135204 Method and apparatus for production of a cast component
06/12/2008US20080134962 Crystallization method and crystallization apparatus
06/12/2008US20080134957 Powder metallurgy crucible for aluminum nitride crystal growth
06/11/2008EP1930483A1 Silicon electromagnetic casting apparatus and method for operating said apparatus
06/10/2008US7385267 Nanosensors
06/05/2008DE102005021642B4 Verfahren zur Herstellung eines einkristallinen Formkörpers A process for preparing a single crystalline form body
06/04/2008CN100392157C Poly-seed crystal preparation method for YBaCuO single domain superconductor
06/03/2008US7381392 For producing directionally solidified Czochralski, float zone or multicrystalline silicon ingots, thin sheets and ribbons for the production of silicon wafers containing: 0.3 to 5.0 ppma boron, 0.1 to 10 ppma phosphorus, less than 150 ppma metallic elements and less than 100 ppma carbon
05/2008
05/29/2008WO2008063715A2 Crystal growth system and method for lead-contained compositions using batch auto-feeding
05/27/2008US7378347 Method of forming catalyst nanoparticles for nanowire growth and other applications
05/27/2008US7377305 Method and apparatus for production of a cast component
05/21/2008CN101182646A Device and method for growing hemisphere type crystal by heat exchange method
05/20/2008US7374817 Topological crystal of transition metal chalcogenide and method of forming the same
05/15/2008US20080110394 Semiconductor Single Crystal Production Device And Producing Method Therefor
05/14/2008CN100387759C Method and device for separating crystal ingot from pyrolyzed boron nitride crucible
05/13/2008CA2492176C Mould parts of silicon nitride and method for producing such mould parts
05/08/2008US20080105296 Nanostructures and methods for manufacturing the same
05/01/2008US20080098953 Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
04/2008
04/30/2008CN100385045C Process for growing lanthanum chloride crystal by falling method of antivacuum crucible
04/29/2008US7364714 3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker
04/29/2008US7364619 Process for obtaining of bulk monocrystalline gallium-containing nitride
04/29/2008US7364617 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
04/24/2008WO2008048628A2 Aligned crystalline semiconducting film on a glass substrate and methods of making
04/24/2008DE10033688B4 Verfahren zur Herstellung von gerichtet erstarrten Gussteilen Process for the preparation of directionally solidified castings
04/23/2008EP1451102B1 Method for catalytic growth of nanotubes or nanofibers comprising a nisi alloy diffusion barrier
04/17/2008US20080090072 Aligned crystalline semiconducting film on a glass substrate and method of making
04/16/2008EP1581674B1 Method for the production of monocrystalline structures and component
04/08/2008US7354850 Directionally controlled growth of nanowhiskers
04/02/2008EP1567611B1 Method for preparing rare-earth halide blocks, blocks obtained and their use to form single crystals and single crystals obtained thereby.
04/02/2008CN201043196Y Multi-thermal area heater for crystal growth
04/02/2008CN100378257C Indium phosphide substrate, indium phosphide single crystal and process for producing them
03/2008
03/27/2008US20080075941 C-plane sapphire method and apparatus
03/27/2008US20080072818 Growing a desired portion of the nanowire, growing a sacrificial portion of the nanowire that is doped differently than the desired portion, differentially removing the sacrificial portion, and removing a growth stub from the desired portion, especially by etching
03/27/2008DE102006017622B4 Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium Method and apparatus for the production of multicrystalline silicon
03/26/2008CN100376727C Method of manufacturing group-III nitride crystal
03/20/2008WO2008032752A1 Substrate production equipment
03/19/2008EP1900847A2 Annular furnace member coated with inorganic material
03/19/2008EP1899508A1 Crucible for the crystallization of silicon
03/19/2008EP1337698A4 Single crystals of lead magnesium niobate-lead titanate
03/19/2008CN101144185A Method for growing near-stoichiometric ratio lithium niobate crystal
03/18/2008US7344598 Rotationally-vibrated unidirectional solidification crystal growth system and its method
03/18/2008US7344596 System and method for crystal growing
03/18/2008US7344595 Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby
03/18/2008US7343960 Method and apparatus for production of a cast component
03/12/2008EP1897123A2 A cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds
03/06/2008US20080053372 Crystal manufacturing
03/05/2008EP1895025A2 Semiconductor crystal, and method and apparatus of production
03/05/2008EP1894647A1 Method of producing monocrystalline seeds simultaneously when casting monocrystalline parts
02/2008
02/29/2008CA2599037A1 Process for the fabrication of crystal seeds simultaneous with the casting of single-crystal parts
02/28/2008US20080047679 Method and apparatus for production of a cast component
02/27/2008EP1689916A4 Scintillation substances (variants)
02/27/2008CN101133191A Method and device for producing oriented solidified blocks made of semi-conductor material
02/27/2008CN100371510C Piezoelectric single crystal, piezoelectric single crystal element and method for producing the same
02/26/2008US7335908 Nanostructures and methods for manufacturing the same
02/20/2008EP1888457A1 Synthesis of a starting material with improved outgassing for the growth of fluoride crystals
02/19/2008US7332028 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
02/14/2008WO2005053003A3 Method of production of silicon carbide single crystal
02/14/2008US20080038177 Cooled Lump From Molten Silicon And Process For Producing The Same
02/13/2008CN101124152A Nanostructures formed of branched nanowhiskers and methods of producing the same
02/13/2008CN101122045A Preparation method for multi-element compounds semiconductor single-crystal and growth device thereof
02/13/2008CN100368604C Method for producing group iii nitride single crystal and apparatus used therefor
02/07/2008US20080029019 Method For Producing Directionally Solidified Silicon Ingots
02/07/2008DE102004048454B4 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen A process for the production of group III-nitride bulk crystals or crystal layers of molten metal
01/2008
01/31/2008US20080022926 Reactor for extended duration growth of gallium containing single crystals
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