| Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247) |
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| 03/09/2010 | US7674337 Gas manifolds for use during epitaxial film formation |
| 03/04/2010 | WO2010025163A1 Apparatus and method of direct electric melting a feedstock |
| 03/04/2010 | WO2010025107A1 Systems and methods for monitoring a solid-liquid interface |
| 03/02/2010 | US7670578 Method for preparing rare-earth halide blocks |
| 02/25/2010 | WO2009150152A3 System and process for the production of polycrystalline silicon for photovoltaic use |
| 02/24/2010 | CN201411507Y Crucible for preparing orientation-determined pure metal single crystal |
| 02/23/2010 | US7666791 Systems and methods for nanowire growth and harvesting |
| 02/23/2010 | US7666708 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 02/18/2010 | US20100037816 Crystal growing system having multiple crucibles and using a temperature gradient method |
| 02/17/2010 | EP2152940A1 Apparatus for the production of silicon from melt with indication of melt spill and melt-spill alarm system |
| 02/16/2010 | US7662706 Nanostructures formed of branched nanowhiskers and methods of producing the same |
| 02/11/2010 | US20100035412 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
| 02/10/2010 | EP2151292A1 Strategically placed large grains in superalloy casting to improve weldability |
| 02/04/2010 | WO2010014205A1 Compositions, optical component, system including an optional component, devices, and other products |
| 02/03/2010 | CN201395648Y Thermal field for growing silicon single crystal |
| 02/03/2010 | CN201395647Y Heat apparatus for growing silicon single crystal |
| 02/02/2010 | US7655601 Enhanced melt-textured growth |
| 01/28/2010 | WO2009134484A3 Method of making ternary piezoelectric crystals |
| 01/28/2010 | US20100022012 Nanosensors |
| 01/28/2010 | DE102008035439A1 Device for breeding crystals from electroconductive melts, comprises breeding chamber having a vertical chamber wall and a chamber base, and a crucible and a heating unit, which are arranged in the breeding chamber |
| 01/28/2010 | DE102008032628A1 Preparation of doped gallium arsenide single crystal, useful to produce gallium arsenide substrate wafer, comprises melting gallium arsenide starting material and subsequently making the gallium arsenide melts |
| 01/26/2010 | US7651861 Method of producing fluorite crystal, fluorite and optical system incorporating the same |
| 01/21/2010 | DE19734736B4 Behälter aus pyrolytischem Bornitrid Pyrolytic boron nitride container |
| 01/21/2010 | DE102008034029A1 Device for growing crystals from electroconductive melt by direct solidification, includes crucible that contains melt, arranged within growing chamber in multicrucible arrangement and in parallel axis around chamber-imaginary central axis |
| 01/20/2010 | CN100582324C Method for producing AIN single crystal and AIN single crystal |
| 01/14/2010 | WO2010005705A1 Systems and methods for growing monocrystalline silicon ingots by directional solidification |
| 01/14/2010 | WO2010003573A1 Method for producing doped gallium arsenide substrate wafers with a low optical absorption coefficient |
| 01/13/2010 | CN101627151A Detachable edge ring for thermal processing support towers |
| 01/06/2010 | EP2141266A2 Silica glass crucible and method of pulling silicon single crystal with silica glass crucible |
| 01/06/2010 | EP2140046A1 Device and process for producing poly-crystalline or multi-crystalline silicon; ingo as well as wafer of poly-crystalline or multi-crystalline... |
| 01/06/2010 | EP2139820A1 A coating composition for a mould |
| 12/31/2009 | US20090320745 Heater device and method for high pressure processing of crystalline materials |
| 12/31/2009 | US20090320744 High pressure apparatus and method for nitride crystal growth |
| 12/31/2009 | DE102008029951A1 Wärmeisolationsanordnung für Schmelztiegel und deren Verwendung sowie Vorrichtung und Verfahren zur Herstellung von ein- oder multikristallinen Materialien Heat insulation arrangement for crucible and its use, and apparatus and method for producing single or multi-crystalline materials |
| 12/30/2009 | WO2009156440A1 Thermal insulation system having variable thermal insulating capacity and the use thereof, and apparatus and method for producing monocrystalline or multicrystalline or vitreous materials |
| 12/30/2009 | CN201372205Y Polysilicon purification device |
| 12/29/2009 | CA2491964C Single crystalline structure material having low material absorption and fabrication method therefor |
| 12/24/2009 | US20090314198 Device and method for production of semiconductor grade silicon |
| 12/23/2009 | EP2135976A2 Crucible holding member and method for producing the same |
| 12/23/2009 | CN201367495Y Medium-pressure cold-wall semi-insulating gallium arsenide single crystal growing furnace |
| 12/22/2009 | US7635414 System for continuous growing of monocrystalline silicon |
| 12/17/2009 | WO2009150152A2 System and process for the production of polycrystalline silicon for photovoltaic use |
| 12/17/2009 | DE102008027359A1 Intensive mixing of electrically conductive melt using a migrating magnetic field during crystallization and solidification processes, comprises producing melt in cylindrical/rectangular coil system surrounding melting pot and/or container |
| 12/16/2009 | EP2133449A1 Iodide single crystal, method for production the iodide single crystal, and scintillator comprising the iodide single crystal |
| 12/16/2009 | EP2132769A1 Method of making a solar grade silicon wafer |
| 12/16/2009 | EP2132366A2 Device and method for producing self-sustained plates of silicon or other crystalline materials |
| 12/16/2009 | CN201362753Y Proportioner used for supplementary feed of directional solidification polysilicon casting furnace |
| 12/16/2009 | CN201362752Y Crucible used for growth of silicon single crystals |
| 12/16/2009 | CN101603208A Silica tube for growing semi-insulated gallium arsenide and method for doping carbon in gallium arsenide |
| 12/16/2009 | CN101603205A Carbon-doped yttrium aluminium garnet crystal and two-step preparation method thereof |
| 12/16/2009 | CN101603204A Thermoluminescent or photoluminescent dosimetry crystal and preparation method thereof |
| 12/16/2009 | CN100570018C Method and apparatus for preparing crystal |
| 12/15/2009 | US7632350 Crystal grower with integrated Litz coil |
| 12/10/2009 | WO2009149062A1 Annealing of semi-insulating cdznte crystals |
| 12/10/2009 | WO2009148726A1 High thermal gradient casting with tight packing of directionally solidified casting |
| 12/10/2009 | CA2726986A1 Annealing of semi-insulating cdznte crystals |
| 12/10/2009 | CA2724387A1 High thermal gradient casting with tight packing of directionally solidified casting |
| 12/09/2009 | EP1556530B1 A method of forming nanostructured catalysts for nanowire growth |
| 12/09/2009 | CN201358291Y Metallic gallium longitudinal temperature gradient coagulation and purification device |
| 12/09/2009 | CN101597788A Method for preparing cast nitrogen-doped monocrystalline silicon through melting polycrystalline silicon under nitrogen |
| 12/09/2009 | CN101597787A Method for casting nitrogen-doped monocrystalline silicon with controllable nitrogen concentration under nitrogen |
| 12/09/2009 | CN100567595C Growing method of lanthanum aluminate crystal |
| 12/09/2009 | CN100567591C Method for producing directionally solidified silicon ingots |
| 12/02/2009 | EP2128088A1 Apparatus and method for manufacturing silicon substrate, and silicon substrate |
| 12/02/2009 | CN101591808A Germanium-doped directionally solidified casting monocrystalline silicon and preparation method thereof |
| 12/02/2009 | CN101591807A Nitrogen-doped directionally solidified casting monocrystalline silicon and preparation method thereof |
| 12/02/2009 | CN100565783C Electric device containing at least four semiconductor nano wire |
| 12/02/2009 | CN100564616C Method of manufacturing compound single crystal and apparatus for manufacturing it |
| 12/02/2009 | CN100564615C Preparation method for multi-element compounds semiconductor single-crystal and growth device thereof |
| 12/02/2009 | CN100564614C Process for finishing a single-crystal metal sheet or oriented solidification metal sheet surface |
| 12/01/2009 | US7625446 High temperature high pressure capsule for processing materials in supercritical fluids |
| 11/18/2009 | CN101580272A Lead fluoride crystal co-doped with ytterbium and alkaline and preparation method thereof |
| 11/17/2009 | US7619290 Nanosensors |
| 11/17/2009 | US7618491 Scintillator single crystal and production method of same |
| 11/12/2009 | DE19919869B4 Gussofen zur Herstellung von gerichtet ein- und polykristallin erstarrten Giesskörpern Casting furnace for producing polycrystalline forwarding, and solidified cast articles |
| 11/11/2009 | EP2116637A2 Crucible for melting silicon and release agent used to the same |
| 11/11/2009 | EP2116319A1 Directionally solidified elongated component with elongated grains of differing widths |
| 11/11/2009 | EP2115188A2 Method and system for forming a higher purity semiconductor ingot using low purity semiconductor feedstock |
| 11/05/2009 | WO2009134484A2 Method of making ternary piezoelectric crystals |
| 10/29/2009 | WO2009130409A1 Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell |
| 10/28/2009 | EP1259663B1 Method and device for growing large-volume oriented monocrystals |
| 10/28/2009 | CN101565192A Methods for preparing anhydrous lithium iodide and scintillation crystal doped with lithium iodide |
| 10/27/2009 | US7608201 Scintillator material based on rare earth with a reduced nuclear background |
| 10/27/2009 | US7608147 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
| 10/21/2009 | CN201331263Y Mono-crystalline silicon thermal-field secondary feeding device |
| 10/21/2009 | CN101562205A Nano-structure and a manufacturing method thereof |
| 10/21/2009 | CN100552096C Improved temperature gradient method for BaY2F8 monocrystal growing and device therefor |
| 10/20/2009 | US7604696 Method of making a solar grade silicon wafer |
| 10/14/2009 | CN101555620A Crystal growing device and method |
| 10/14/2009 | CN100548873C Method for manufacturing highly-crystallized oxide powder |
| 10/13/2009 | CA2517764C Silicon production apparatus |
| 10/08/2009 | US20090249997 Method of producing group iii nitride crystal, apparatus for producing group iii nitride crystal, and group iii nitride crystal |
| 10/08/2009 | DE102007028547B4 Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen An apparatus for producing crystals of electrically conductive melting |
| 10/07/2009 | EP2106465A1 Arrangement and method for producing a crystal from the melt of a raw material and monocrystal |
| 10/07/2009 | CN201321511Y New type crystal growing furnace |
| 10/07/2009 | CN101550586A Growing technique of ZnTe monocrystal |
| 10/07/2009 | CN100547124C Growing method for carbon-doped sapphire crystal |
| 10/01/2009 | US20090241829 Crystal growth system and method for lead-contained compositions using batch auto-feeding |
| 09/30/2009 | EP2105522A2 Crystal growing device |
| 09/30/2009 | CN101545141A Sulfurized gallium and barium monocrystal as well as growing method and infrared nonlinear optical device thereof |