Patents for C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
01/2008
01/31/2008US20080022921 Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device
01/31/2008DE102005013410B4 Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen Apparatus and method for crystallizing non-ferrous metals
01/30/2008EP1254861B1 Silicon continuous casting method
01/30/2008CN100365173C Method of production of silicon carbide single crystal
01/30/2008CN100365172C Yb and Er -codoped gadolinium silicate laser crystal and preparation method therefor
01/23/2008EP1881092A1 Method for manufacturing a nanostructure based on inter-connected nanowires, nanostructure and use as thermoelectric converter
01/23/2008CN101109103A Method for growing crystal with high-vacuum gradient of temperature method
01/23/2008CN101109057A <100> Fe-Ga magnetostriction material on axial orientation and method of preparing the same
01/16/2008EP1738199B1 Scintillator material based on rare earth with a reduced nuclear background
01/16/2008CN101104951A Method for preparing samarium-barium-copper-oxygen single-orientation superconductive block
01/10/2008US20080006200 Method and apparatus for producing large, single-crystals of aluminum nitride
01/10/2008DE10111778B4 Supraleiter-Zwischenprodukt und seine Verwendung Superconductor intermediate and its use
01/09/2008CN100360720C Method for growth of zinc oxide monocrystal by falling aerated crucible method
01/08/2008US7317237 Photovoltaic conversion device and method of manufacturing the device
01/03/2008US20080003162 Control the diameter of SiC nanowhisker by pre-depositing a metal thin film on silicon substrate and controlling the thickness of thin film; reacting silicon substrate with hydrogen and hydrocarbon plasma; light emitters; low cost, emits visible light of various wavelengths
01/01/2008US7314519 Vapor-phase epitaxial apparatus and vapor phase epitaxial method
01/01/2008US7314518 Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
01/01/2008US7314517 Process for obtaining bulk mono-crystalline gallium-containing nitride
12/2007
12/27/2007WO2007148988A1 Crystallization furnace
12/27/2007WO2007148987A1 Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots
12/27/2007WO2007148986A1 Reusable crucibles and method of manufacturing them
12/27/2007WO2007148985A1 Device and method for production of semiconductor grade silicon
12/27/2007US20070296061 Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device
12/26/2007CN101092748A Method for preparing Te-Zn-Cd monocrystal in large volume
12/26/2007CN100357498C Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace
12/21/2007WO2007144557A1 Friction welding of a single crystal component to a second component with minimisation of in plane friction and forge forces
12/21/2007CA2653854A1 Friction welding of a single crystal component to a second component with minimisation of in plane friction and forge forces
12/20/2007US20070289526 Multi-piece ceramic crucible and method for making thereof
12/19/2007EP1867759A1 Manufacturing equipment for polysilicon ingot
12/19/2007EP1866247A1 Device and method for the crystallisation of nonferrous metals
12/19/2007CN200992592Y Crystal growing system by multi-crucible falling method
12/19/2007CN200992591Y Crystal growing system by temperature gradient technique
12/19/2007CN200992590Y Vacuum pumping device for growing gallium arsenide single crystal
12/19/2007CN101091009A Method for producing directionally solidified silicon ingots
12/19/2007CN101089241A Growing method of potassium vanadate non-linear optical crystal
12/19/2007CN101089238A Calcium fluoride intermediate infrared laser crystal material of dysprosium activated
12/19/2007CN101089237A Preparing chlorine lead potassium color-center laser crystal and waveguide crystal material by femtosecond laser induction
12/19/2007CN101089235A Intermediate, infrared laser crystal material of dysprosium activated
12/19/2007CN101089234A Femtosecond laser induction preparing bromine lead potassium color-center laser crystal and waveguide crystal material
12/13/2007US20070283882 Manufacturing equipment for polysilicon ingot
12/12/2007EP1510602B1 Drop tube type granular crystal producing device
12/12/2007CN200988869Y Rotary crucible crystal growing system by temperature gradient method
12/12/2007CN200988868Y Resistor heating vertical multiple crucible crystal falling method growing system
12/12/2007CN100354229C A ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
12/11/2007US7306673 Furnace purification and metal fluoride crystal grown in a purified furnace
12/11/2007US7306670 Method for producing monocrystalline structures
12/06/2007US20070281156 Nanoscale wires and related devices
12/06/2007US20070277729 Method and Device for Producting Monocrystals
12/05/2007EP1862570A1 Crystal growing crucible
12/05/2007CN101084329A Pr-containing single crystal for scintillator, process for producing the same, radiation detector and inspection apparatus
11/2007
11/27/2007US7301199 Nanoscale wires and related devices
11/22/2007US20070267947 Piezoelectric Single Crystal and Piezoelectric Single-Crystal Device and Method for Manufacturing the Same
11/22/2007US20070266928 Method of growing group III nitride crystal, group III nitride crystal grown thereby, group III nitride crystal growing apparatus and semiconductor device
11/21/2007EP1857574A2 Device and method for generating one or multicrystalline materials, in particular multi-crystalline silicium
11/21/2007CN200978306Y Rotatable multi-crucible supporting device in crystal growth system
11/21/2007CN101074488A Device and method for manufacturing crystal or polycrystal material especially polysilicon
11/15/2007US20070261633 GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device
11/14/2007EP1742870B1 Method and installation for the production of blocks of a semiconductor material
11/14/2007CN101070608A Rotary multi-crucible lowering method crystal growth system
11/14/2007CN101070607A Novel glittering crystal LaBr3Ce3+ crucible-lowering method growth process
11/14/2007CN100348786C Method of growing telluronium manganese mercury crystal
11/13/2007US7294198 Process for producing single-crystal gallium nitride
11/08/2007US20070256630 Method and apparatus for aluminum nitride monocrystal boule growth
11/07/2007EP1851367A2 Method and device for producing oriented solidified blocks made of semi-conductor material
11/07/2007CN100347083C Silicon manufacturing apparatus
11/01/2007WO2007122865A1 Method for manufacturing single crystal of nitride
11/01/2007US20070252136 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
10/2007
10/31/2007EP1849892A1 Furnace for non ferrous metal smelting
10/31/2007EP1848843A1 Method for producing directionally solidified silicon ingots
10/31/2007CN101063231A Chromium doped molybdic acid aluminum potassium tunable laser crystal
10/31/2007CN101063228A Garnet laser crystal containing scandium of high efficiency antiradiation Yb3+ sensitizing Er3+
10/31/2007CN100345990C Method for developing a nickel-base super alloy
10/30/2007US7288152 Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same
10/30/2007US7288151 Method of manufacturing group-III nitride crystal
10/30/2007US7288150 Homogeneous incorporation of activator element in a storage phosphor
10/25/2007DE102007020239A1 Device for the production of silicon crystals from electrically conductive melts, exhibits crucible having melt arranged in growth chamber, heating arrangement surrounding the crucible, and power supply unit arranged outsides of the chamber
10/24/2007CN100344800C Growth of tricesium borate monocrystal cosolvent
10/24/2007CN100344396C Process and apparatus for manufacturing a turbine component, turbine components and use of apparatus
10/18/2007WO2007117689A2 Growing large surface area gallium nitride crystals
10/18/2007US20070241284 Scintillator Material Based on Rare Earth With a Reduced Nuclear Background
10/18/2007US20070240634 Crystal growing apparatus having a crucible for enhancing the transfer of thermal energy
10/18/2007US20070240633 One hundred millimeter single crystal silicon carbide wafer
10/18/2007DE102006017622A1 Manufacturing multi-crystalline silicon comprises placing detachable upper section at an upper edge of crucible furnace to build container structure, filling the container structure with silicon filling, and heating the container structure
10/18/2007DE102006017621A1 Crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises stable crucible, and heating device for melting the silicon and exhibiting jacket heater for rejection of heat flow
10/17/2007CN200961153Y Processing system for crystal growth raw material
10/11/2007US20070234946 Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
10/09/2007US7279632 Multi-element polycrystal for solar cells and method of manufacturing the same
10/09/2007US7279040 Method and apparatus for zinc oxide single crystal boule growth
10/04/2007WO2007084936A3 Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics
10/04/2007WO2007084934A3 Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
10/04/2007WO2007030501A3 Microfluidic manipulation of fluids and reactions
10/04/2007US20070227189 Silicon Casting Apparatus and Method of Producing Silicon Ingot
10/04/2007DE10085308B4 Polykristallines Material, Verfahren zu dessen Herstellung und dessen Verwendung Polycrystalline material, process for its preparation and its use
10/03/2007EP1840247A2 Method of manufacturing silicon nanowires using porous glass template and device comprising silicon nanowires formed by the same
10/03/2007CN101048539A Single crystal wire and manufacturing method of the same
10/02/2007US7276219 Activation laser; crystallization from melt
09/2007
09/25/2007US7273732 Systems and methods for nanowire growth and harvesting
09/25/2007US7273412 Abrasive wheel with improved composing structure
09/20/2007US20070215037 Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, and semiconductor device
09/20/2007US20070215035 Method for Producing Compound Single Crystal and Production Apparatus for Use Therein
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