| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 01/02/2003 | EP1271663A2 A III nitride film and III nitride multilayer |
| 01/02/2003 | EP1271662A1 Iii nitride compound semiconductor device |
| 01/02/2003 | EP1271627A2 Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and respective substrate structure |
| 01/02/2003 | EP1271625A2 Method of fabrication compound semiconductor device |
| 01/02/2003 | EP1271607A2 Chemical vapor deposition apparatus and method |
| 01/02/2003 | EP1271154A2 Biological applications of semiconductor nanocrystals |
| 01/02/2003 | EP1271047A2 Lamp for vehicles and method of making |
| 01/02/2003 | EP1269553A1 Semiconductor polymers, method for the production thereof and an optoelectronic component |
| 01/02/2003 | EP1269520A2 Fabrication of semiconductor materials and devices with controlled electrical conductivity |
| 01/02/2003 | EP1257990A4 Light-emitting diode display systems and methods with enhanced light intensity |
| 01/01/2003 | CN2529387Y Improved of ligh-emitting diode |
| 01/01/2003 | CN1388949A Indoor/outdoor advertising device and method for manufacturing the same |
| 01/01/2003 | CN1388595A LED element with opposite electrodes and its making process |
| 01/01/2003 | CN1388594A Light-emitting semiconductor device containing fluorophor and its application |
| 01/01/2003 | CN1097852C Miniature semiconductor for surface mounting and carrier bar adapted for its production |
| 01/01/2003 | CN1097847C Vapar phase epitaxial technology of compound semiconductor |
| 12/31/2002 | US6501154 Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure |
| 12/31/2002 | US6501103 Light emitting diode assembly with low thermal resistance |
| 12/31/2002 | US6501102 Light emitting diode (LED) device that produces white light by performing phosphor conversion on all of the primary radiation emitted by the light emitting structure of the LED device |
| 12/31/2002 | US6501101 Light emitting diode |
| 12/31/2002 | US6501100 White light emitting phosphor blend for LED devices |
| 12/31/2002 | US6501091 Quantum dot white and colored light emitting diodes |
| 12/31/2002 | US6501084 Lamp unit using short-wave light emitting device |
| 12/31/2002 | US6500747 Method of manufacturing GaN semiconductor substrate |
| 12/31/2002 | US6500689 Process for producing GaN related compound semiconductor |
| 12/31/2002 | US6500257 Epitaxial material grown laterally within a trench and method for producing same |
| 12/31/2002 | US6500026 Hybrid connector and process for assembling the same |
| 12/27/2002 | WO2002104072A2 Emissive multichromophoric systems |
| 12/27/2002 | WO2002103813A1 Nitride semiconductor light emitting element and light emitting device using it |
| 12/27/2002 | WO2002103812A1 Nitride semiconductor, production method therefor and nitride semiconductor element |
| 12/27/2002 | WO2002103811A1 Nitride semiconductor light emitting device |
| 12/27/2002 | WO2002103794A1 A method of producing a lamp |
| 12/27/2002 | WO2002103769A1 P-type semiconductor manufacturing method and semiconductor device |
| 12/27/2002 | WO2002103756A2 Phosphor embedded die epoxy and lead frame modifications |
| 12/27/2002 | WO2002103752A2 Metal-assisted chemical etch to produce porous group iii-v materials |
| 12/27/2002 | WO2002103090A2 A method of growing a semiconductor layer |
| 12/27/2002 | WO2002080288A3 Current source methods and apparatus for light emitting diodes |
| 12/27/2002 | WO2002068998A9 Fiber-optic cable alignment system |
| 12/27/2002 | WO2002058164A3 Gan layer on a substrate with an amorphous layer |
| 12/27/2002 | CA2450156A1 A method of producing a lamp |
| 12/27/2002 | CA2446656A1 Gan based led formed on a sic substrate |
| 12/27/2002 | CA2439060A1 Emissive multichromophoric systems |
| 12/26/2002 | US20020197841 Group III nitride compound semiconductor element and method for producing the same |
| 12/26/2002 | US20020197764 Group III nitride compound semiconductor light-emitting element |
| 12/26/2002 | US20020197755 Visible light emitting diodes fabricated from soluble semiconducting polymers |
| 12/26/2002 | US20020197022 Optical connector |
| 12/26/2002 | US20020196827 Photon source and a method of operating a photon source |
| 12/26/2002 | US20020196213 Image display |
| 12/26/2002 | US20020195935 Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source |
| 12/26/2002 | US20020195677 Multi color detector |
| 12/26/2002 | US20020195619 Nitride semiconductor stack and its semiconductor device |
| 12/26/2002 | US20020195609 Semiconductor light emitting device |
| 12/26/2002 | US20020195608 Light emitting device, semiconductor device, and method of manufacturing the devices |
| 12/26/2002 | US20020195607 Optical semiconductor device having an active layer containing N |
| 12/26/2002 | US20020195606 Group III nitride LED with undoped cladding layer and multiple quantum well |
| 12/26/2002 | US20020195587 Broad-spectrum terbium-containing garnet phosphors and white-light sources incorporating the same |
| 12/25/2002 | CN1387330A Bidirectional optical communication equipment device and bidirectional optical communication apparatus |
| 12/25/2002 | CN1387266A LEC with higher luminous efficiency |
| 12/25/2002 | CN1387246A Voltage metering method, electric test method and device, and method for mfg. semiconductor device and device substrate |
| 12/25/2002 | CN1387231A Nitride-based compound semiconductor crystal substrate structure and mfg. method thereof |
| 12/25/2002 | CN1387002A Light source |
| 12/25/2002 | CN1097317C Laser diode |
| 12/25/2002 | CN1096936C Multicolor organic light emitting device and mfg. method thereof |
| 12/24/2002 | US6498356 LED chip, LED array chip, LED array head and image-forming apparatus |
| 12/24/2002 | US6498355 High flux LED array |
| 12/24/2002 | US6498111 Fabrication of semiconductor materials and devices with controlled electrical conductivity |
| 12/24/2002 | US6498050 Bipolar transistor, semiconductor light emitting device and semiconductor device |
| 12/24/2002 | US6498048 Method of manufacturing crystal of iii-v compounds of the nitride system, crystal substrate of iii-v compounds of the nitride system, crystal film of iii-v compounds of the nitride system, and method of manufacturing device |
| 12/24/2002 | US6497944 Light-emitting device comprising a gallium-nitride-group compound-semiconductor |
| 12/24/2002 | CA2080719C Exposure device and printer |
| 12/19/2002 | WO2002101842A1 Light- emitting diode (led) package and packaging method for shaping the external light intensity distribution. |
| 12/19/2002 | WO2002101841A1 Iii group nitride based semiconductor luminescent element |
| 12/19/2002 | WO2002101840A1 Iii group nitride based semiconductor element and method for manufacture thereof |
| 12/19/2002 | WO2002101126A1 Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate |
| 12/19/2002 | WO2002101121A1 High surface quality gan wafer and method of fabricating same |
| 12/19/2002 | WO2002101120A2 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 12/19/2002 | WO2002052615A3 Radiation-emitting semiconductor component with a luminescence conversion element |
| 12/19/2002 | US20020193664 Light source for borescopes and endoscopes |
| 12/19/2002 | US20020192959 III nitride semiconductor substrate for ELO |
| 12/19/2002 | US20020192507 Bulk monocrystalline gallium nitride |
| 12/19/2002 | US20020192499 Homogeneous films formed on a substrate having a large screen by vacuum evaporation; small changes in the film thickness and density on deposition; controlled using an equation based on distance, thickness and angle against the perpendicular |
| 12/19/2002 | US20020191658 Engineering the gain/loss profile of intersubband optical devices having heterogeneous cascades |
| 12/19/2002 | US20020191382 Surface-mount device and method for manufacturing the surface-mount device |
| 12/19/2002 | US20020190641 Phosphor embedded die epoxy and lead frame modifications |
| 12/19/2002 | US20020190638 Organic light-emitting diode with high contrast ratio |
| 12/19/2002 | US20020190637 Light emission apparatus and method of fabricating the same |
| 12/19/2002 | US20020190275 III nitride film and a III nitride multilayer |
| 12/19/2002 | US20020190264 Light-emitting device with quantum dots and holes, and its fabricating method |
| 12/19/2002 | US20020190263 Nitride-based semiconductor light-emitting device |
| 12/19/2002 | US20020190262 Light emitting device |
| 12/19/2002 | US20020190261 Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals |
| 12/19/2002 | US20020190260 Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
| 12/19/2002 | US20020190259 III-Nitride light emitting devices with low driving voltage |
| 12/19/2002 | US20020190098 Semiconductor light-emitting device and method of manufacturing the same and mounting plate |
| 12/19/2002 | US20020189531 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 12/19/2002 | DE19549588C2 Epitaxial structure for light-emitting gallium-phosphide diode |
| 12/18/2002 | EP1267424A2 Method for conformally coating a light emitting semiconductor structure with a phosphor by electrophoresis |
| 12/18/2002 | EP1267423A2 Light-emitting device sealing |
| 12/18/2002 | EP1267422A2 Nitride semiconductor device and method for manufacturing the same |
| 12/18/2002 | EP1267420A2 Light emitting diodes with improved light extraction efficiency |