Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2008
02/28/2008US20080048256 Semiconductor Device
02/28/2008US20080048255 Insulated gate semiconductor device
02/28/2008US20080048254 Semiconductor device and manufacturing method of the semiconductor device
02/28/2008US20080048253 Semiconductor device having a recess channel structure and method for manufacturing the same
02/28/2008US20080048252 Mosfet device suppressing electrical coupling between adjoining recess gates and mthod for manufacturing the same
02/28/2008US20080048251 Lateral trench MOSFET with direct trench polysilicon contact and method of forming the same
02/28/2008US20080048250 Mosfet with a thin gate insulating film
02/28/2008US20080048249 Semiconductor device and method of manufacturing the same
02/28/2008US20080048248 Semiconductor memory device
02/28/2008US20080048247 Semiconductor device and semiconductor device fabrication method
02/28/2008US20080048246 Multi-bit electromechanical memory devices and methods of manufacturing the same
02/28/2008US20080048245 Semiconductor device and manufacturing methods thereof
02/28/2008US20080048244 linoleic acid to gamma-linolenic acid and alpha-linolenic acid to stearidonic acid; added to pharmaceuticals, nutritional compositions, animal feeds, cosmetics; host cell; polypeptide; vector; nucleic acid sequence
02/28/2008US20080048243 Nonvolatile semiconductor memory and manufacturing method thereof
02/28/2008US20080048242 Semiconductor device having load resistor and method of fabricating the same
02/28/2008US20080048241 Nonvolatile semiconductor memory device and fabrication method therefor
02/28/2008US20080048240 Printed Non-Volatile Memory
02/28/2008US20080048239 Semiconductor memory device having DRAM cell mode and non-volatile memory cell mode and operation method thereof
02/28/2008US20080048238 Nonvolatile semiconductor memory and method of fabrication thereof
02/28/2008US20080048237 Nonvolatile semiconductor memory device
02/28/2008US20080048236 Parallel varactor capacitor
02/28/2008US20080048235 Capacitor structure and method for preparing the same
02/28/2008US20080048234 Semiconductor memory device and method for fabricating same
02/28/2008US20080048233 Methods for manufacturing a finfet using a conventional wafer and apparatus manufactured therefrom
02/28/2008US20080048231 Buried decoupling capacitors, devices and systems including same, and methods of fabrication
02/28/2008US20080048227 Dielectric film, method of manufacturing the same, and semiconductor capacitor having the dielectric film
02/28/2008US20080048225 Atomic layer deposited barium strontium titanium oxide films
02/28/2008US20080048219 Semiconductor Device Having Substrate-Driven Field-Effect Transistor and Schottky Diode and Method of Forming the Same
02/28/2008US20080048218 Method and flip chip structure for power devices
02/28/2008US20080048217 Semiconductor device and method of fabricating the same
02/28/2008US20080048216 Apparatus and method of forming metal oxide semiconductor field-effect transistor with atomic layer deposited gate dielectric
02/28/2008US20080048215 Electrical stress protection apparatus and method of manufacture
02/28/2008US20080048214 Junction field effect transistor and method of manufacturing the same
02/28/2008US20080048213 Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same
02/28/2008US20080048212 Imaging device
02/28/2008US20080048210 Semiconductor device and method for making the same
02/28/2008US20080048207 Preparation method of a coating of gallium nitride
02/28/2008US20080048200 LED with Phosphor Tile and Overmolded Phosphor in Lens
02/28/2008US20080048194 Nitride Semiconductor Light-Emitting Device
02/28/2008US20080048190 Circuit board for electro-optical device, electro-optical device, and electronic apparatus
02/28/2008US20080048189 Semiconductor Device and Method of Manufacturing the Same
02/28/2008US20080048188 Electronic devices integrated on a single substrate and method for fabricating the same
02/28/2008US20080048187 Semiconductor thin film, thin film transistor, method of manufacturing the semiconductor thin film, method of manufacturing the thin film transistor, and manufacturing device of semiconductor thin film
02/28/2008US20080048185 Field effect transistor and method of manufacturing the same
02/28/2008US20080048182 Display with integral speaker element
02/28/2008US20080048181 Organic Semiconductor Thin Film, Organic Semiconductor Device, Organic Thin Film Transistor and Organic Electronic Luminescence Element
02/28/2008US20080048176 Semiconductor device and method for fabricating the same
02/28/2008US20080048174 Semiconductor Device Including a Lateral Field-Effect Transistor and Schottky Diode
02/28/2008US20080048173 Semiconductor Device Including a Lateral Field-Effect Transistor and Schottky Diode
02/28/2008US20080048166 Semiconductor integrated circuit device
02/28/2008US20080048164 Electro-resistance element, method of manufacturing the same and electro-resistance memory using the same
02/28/2008DE102005056908B4 Integrierte Schaltungsanordnung mit Shockleydiode oder Thyristor und Verfahren zum Herstellen Integrated circuit arrangement with Shockleydiode or thyristor and methods for preparing
02/27/2008EP1892766A1 Method for manufacturing a device having a structure with one or a plurality of SI and GE-based micro or nanowires, using germanium condensation
02/27/2008EP1892765A1 Method for doping a fin-based semiconductor device
02/27/2008EP1892758A2 Manufacturing of flexible display device panel
02/27/2008EP1892753A2 Printed non-volatile memory and manufacturing method thereof
02/27/2008EP1891679A1 Semiconductor nanowire transistor
02/27/2008EP1891678A2 Photocathode structure and operation
02/27/2008EP1506573A4 Ultra small thin windows in floating gate transistors defined by lost nitride spacers
02/27/2008EP1502303A4 High voltage switching devices and process for forming same
02/27/2008EP1472725A4 Method and structure for forming an hbt
02/27/2008EP1287552B1 Method of making a power mosfet
02/27/2008EP1044473B1 Low-inductance, gate-controlled thyristor
02/27/2008CN101133498A Quantum well transistor using high dielectric constant dielectric layer
02/27/2008CN101133497A Semiconductor device and the method of manufacturing the same
02/27/2008CN101133490A Redistributed solder pads using etched lead frame
02/27/2008CN101133482A Device with stepped source/drain region profile
02/27/2008CN101133476A MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
02/27/2008CN101132026A Schottky diode
02/27/2008CN101132025A Non-volatile memory device and design method thereof
02/27/2008CN101132024A Insulated gate semiconductor device
02/27/2008CN101132023A Structure and method to use low k stress liner to reduce parasitic capacitance
02/27/2008CN101132022A GaN device based on component-gradient GaN MISFET and preparing method thereof
02/27/2008CN101132021A Vertical BJT, manufacturing method thereof
02/27/2008CN101132011A Array substrate with copper conductors, display device having the same and method of manufacturing the same
02/27/2008CN101132007A Flash memory device and manufacturing method thereof
02/27/2008CN101131935A Metal-oxide-semiconductor transistor and method of manufacturing the same
02/27/2008CN101131495A Manufacturing of flexible display device panel
02/27/2008CN100372142C Polymer structure and functional element having the same, and transistor and display using the same
02/27/2008CN100372129C Germanium, silicon Schotty diode and preparation method
02/27/2008CN100372128C Germanium-silicon schottky diode and its production method
02/27/2008CN100372127C Semiconductor device
02/27/2008CN100372126C High-frequency thyratron transistor
02/27/2008CN100372125C Heterojunction semiconductor device
02/27/2008CN100372120C Ultra-small integrated circuit of inductive component including high quality factor
02/27/2008CN100372115C Method for manufacturing silicon rectifier as electro static discharge protection
02/27/2008CN100372091C Semiconductor device and method for evaluating characteristics of the same
02/27/2008CN100372082C Method of making transistors
02/27/2008CN100372080C Processing method for self-aligning metal silicide production capable of avoiding short-circuit
02/27/2008CN100372068C Conductive spacers extended floating gates
02/27/2008CN100372062C Nanometer-size die manufacturing method and its application
02/27/2008CN100372054C Display device and method of manufacturing the same
02/27/2008CN100372051C Method for making semiconductor device
02/27/2008CN100372028C Semiconductor resistance element and producing method thereof
02/27/2008CN100371962C Luminous device and its driving method, and electronic apparatus
02/27/2008CN100371819C Liquid crystal display panel and fabricating method thereof
02/27/2008CN100371816C TFT array substrate of liquid crystal display, liquid crystal display panel and its manufacturing method
02/27/2008CN100371815C Manufacture of thin-membrane transistor of liquid-crystal displaying device
02/27/2008CN100371813C Liquid crystal display panel of horizontal electronic field applying type and fabricating method thereof
02/27/2008CN100371812C Electrooptic device and electronic device