| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/20/2008 | US20080067543 Method of manufacturing single crystalline gallium nitride thick film |
| 03/20/2008 | US20080067542 Semiconductor Devices |
| 03/20/2008 | US20080067538 Electrode Structure of a Transistor, and Pixel Structure and Display Apparatus Comprising the Same |
| 03/20/2008 | US20080067529 Manufacturing a semiconductor device |
| 03/20/2008 | US20080067524 Micropipe-free silicon carbide and related method of manufacture |
| 03/20/2008 | US20080067523 High Electron Mobility Transistor (Hemt) Made of Layers of Group XIII Element Nitrides and Manufacturing Method Thereof |
| 03/20/2008 | US20080067522 Gallium Nitride-Based Semiconductor Stacked Structure, Production Method Thereof, and Compound Semiconductor and Light-Emitting Device Each Using the Stacked Structure |
| 03/20/2008 | US20080067521 Electro-optical device and electronic apparatus |
| 03/20/2008 | US20080067520 Organic electro-luminescent display and method of fabricating the same |
| 03/20/2008 | US20080067519 Display device and method of manufacturing the same |
| 03/20/2008 | US20080067517 Semiconductor device and method for forming the same |
| 03/20/2008 | US20080067516 Method for manufacturing a TFT transistor |
| 03/20/2008 | US20080067514 Flat panel display device with polycrystalline silicon thin film transistor |
| 03/20/2008 | US20080067513 Display device |
| 03/20/2008 | US20080067512 Array substrate and display apparatus having the same |
| 03/20/2008 | US20080067511 Liquid crystal display |
| 03/20/2008 | US20080067510 Liquid crystal display panel |
| 03/20/2008 | US20080067508 Field-effect transistor and method for manufacturing the same |
| 03/20/2008 | US20080067501 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors |
| 03/20/2008 | US20080067500 Electromagnetic Wave Detecting Element and Electromagnetic Wave Detection Device Using the Same |
| 03/20/2008 | US20080067499 Silicon/germanium superlattice thermal sensor |
| 03/20/2008 | US20080067498 Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same |
| 03/20/2008 | US20080067496 Universal gates for ising tqft via time-tilted interferometry |
| 03/20/2008 | US20080067495 Tunnel effect transistors based on silicon nanowires |
| 03/20/2008 | US20080067494 Back-gated field emission electron source |
| 03/20/2008 | US20080067493 Diamond Electron Emission Cathode,Electron Emission Source,Electron Microscope,And Electron Beam Exposure Device |
| 03/20/2008 | US20080067492 Three-dimensional phase-change memory |
| 03/20/2008 | US20080067489 SnSe-Based Limited Reprogrammable Cell |
| 03/20/2008 | US20080067486 Ring heater for a phase change memory device |
| 03/20/2008 | US20080067064 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
| 03/20/2008 | US20080066972 Light sensitive display |
| 03/20/2008 | DE112006001152T5 Halbleitervorrichtung mit Elementabschnitt und Verfahren zur Fertigung der Vorrichtung A semiconductor device having element portion and method of manufacturing the device |
| 03/20/2008 | DE112004002137T5 Transistor mit bipolarem Übergang mit verbesserter extrinsischer Basisregion und Herstellungsverfahren Bipolar transistor junction with improved extrinsic base region and manufacturing processes |
| 03/20/2008 | DE102007038152A1 Vertikaler Bipolartransistor, Verfahren zu seiner Herstellung A vertical bipolar transistor, process for its preparation |
| 03/20/2008 | DE102007028798A1 Leistungshalbleitervorrichtung Power semiconductor device |
| 03/20/2008 | DE102007024113A1 Halbleitervorrichtung mit isoliertem Gate und Verfahren zur Herstellung derselben A semiconductor device comprising insulated gate and method of manufacturing the same |
| 03/20/2008 | DE102006040764A1 Tranistor mit einem lokal vorgesehenem Metallsilizidgebiet in Kontaktbereichen und Herstellung des Transistors Tranistor with a locally the intended metal silicide contact areas and fabrication of the transistor |
| 03/20/2008 | DE102006040491A1 Implantation zone i.e. field stop zone, forming method for e.g. punch trough insulated gate bipolar transistor, involves expanding undisturbed zone opposite to formed zone in same penetration depth with less radiation energy and path length |
| 03/20/2008 | DE102006038874A1 Semiconductor device, has trench with side wall-isolation extending from main surface deeply into semiconductor substrate and comprising conductive material extending from main surface to substrate layer |
| 03/20/2008 | DE102006035669A1 Transistor mit einem verformten Kanalgebiet, das eine leistungssteigernde Materialzusammensetzung aufweist Transistor with a strained channel region having a performance-enhancing material composition |
| 03/20/2008 | DE102004002242B4 Verfahren zum Herstellen einer Halbleiterstruktur mit Kornelementen für einen Kondensator einer Speicherzelle A method of manufacturing a semiconductor structure with grain elements for a capacitor of a memory cell |
| 03/19/2008 | EP1901356A1 Testing circuit, wafer, measuring apparatus, device manufacturing method and display device |
| 03/19/2008 | EP1901355A1 Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure |
| 03/19/2008 | EP1901354A1 A tunnel field-effect transistor with gated tunnel barrier |
| 03/19/2008 | EP1901347A2 Method for crystallizing semiconductor film and semiconductor film crystallized by the method |
| 03/19/2008 | EP1901342A1 Field effect transistor |
| 03/19/2008 | EP1901341A1 Field effect transistor |
| 03/19/2008 | EP1900681A1 Tunnel effect transistors based on silicon nanowires |
| 03/19/2008 | EP1900041A1 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device |
| 03/19/2008 | EP1900037A1 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method |
| 03/19/2008 | EP1900036A1 Group iii nitride layers on silicon carbide substrates |
| 03/19/2008 | EP1900035A2 Semiconductor device and method of manufacturing such a device |
| 03/19/2008 | EP1900034A2 Semiconductor device and method of manufacturing such a device |
| 03/19/2008 | EP1900033A2 Memory using hole trapping in high-k dielectrics |
| 03/19/2008 | EP1900015A2 Doping profile improvement of in-situ doped n-type emitters |
| 03/19/2008 | EP1899977A2 Method for programming a memory device |
| 03/19/2008 | EP1899261A2 Semiconducting nanoparticles with surface modification |
| 03/19/2008 | EP1790002B1 Method of manufacturing a semiconductor device |
| 03/19/2008 | EP1631611B1 Highly pure, ion-free semiconducting polythiophenes, method for the production thereof, and use thereof for the production of electronic components |
| 03/19/2008 | EP1485947A4 Thermally induced reflectivity switch for laser thermal processing |
| 03/19/2008 | EP1327266B1 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode |
| 03/19/2008 | EP1297567A4 Hydrogen implant for buffer zone of punch-through non epi igbt |
| 03/19/2008 | CN201038164Y ZnO base transparent field field-effect transistor |
| 03/19/2008 | CN201038163Y Channel high pressure P type metal oxide semiconductor tube |
| 03/19/2008 | CN201038162Y Power type separation device metal oxide semiconductor field effect transistor |
| 03/19/2008 | CN101147266A Vertical memory device and method |
| 03/19/2008 | CN101147265A Trench MOSFET and method for manufacturing same |
| 03/19/2008 | CN101147264A Testing circuit, wafer, measuring device, component making method and display device |
| 03/19/2008 | CN101147263A Structure and method of fabricating high-density, trench-based non-volatile random access SONOS memory cells for SOC applications |
| 03/19/2008 | CN101147262A Body-tied silicon on insulator semiconductor device and method therefor |
| 03/19/2008 | CN101147256A Storage element, storage device and semiconductor device |
| 03/19/2008 | CN101147251A Method of manufacturing a semiconductor device having a buried doped region |
| 03/19/2008 | CN101147243A Method for making a semiconductor structure using silicon germanium |
| 03/19/2008 | CN101146384A Electro-optical device |
| 03/19/2008 | CN101145585A Junction field effect transistor and method of manufacturing the same |
| 03/19/2008 | CN101145584A Flash memory device, method of operating a flash memory device and method for manufacturing the same device |
| 03/19/2008 | CN101145583A Semiconductor device with split gate memory cell and fabrication method thereof |
| 03/19/2008 | CN101145582A Quasi dual-gate MOS transistor and its preparation method |
| 03/19/2008 | CN101145581A Semiconductor device |
| 03/19/2008 | CN101145580A Semiconductor device and manufacturing method thereof |
| 03/19/2008 | CN101145579A Inverted-trench grounded-source FET structure with trenched source body short electrode |
| 03/19/2008 | CN101145578A Semiconductor device and method for making the same |
| 03/19/2008 | CN101145577A Semiconductor device and its production method |
| 03/19/2008 | CN101145576A Trench type MOS transistor and method for manufacturing the same |
| 03/19/2008 | CN101145575A Non-volatile memory unit and array |
| 03/19/2008 | CN101145574A High voltage tolerance element and producing method thereof |
| 03/19/2008 | CN101145573A Semiconductor structure and its making method |
| 03/19/2008 | CN101145572A Semiconductor device and manufacturing method thereof |
| 03/19/2008 | CN101145564A Active matrix display base plate preparing method |
| 03/19/2008 | CN101145533A Method of fabricating semiconductor device |
| 03/19/2008 | CN100376043C Active devices using threads |
| 03/19/2008 | CN100376040C Quantum device |
| 03/19/2008 | CN100376038C Electronics assembly and method for fabricating the same |
| 03/19/2008 | CN100376037C Method of manufacturing fine T-shaped electrode |
| 03/19/2008 | CN100376036C Metal contact structure and method of manufacturing the same |
| 03/19/2008 | CN100376035C Semiconductor device and method for fabricating the same |
| 03/19/2008 | CN100376034C Amorphous carbon membrane/n type silicon bidirectional voltage induction switch |
| 03/19/2008 | CN100376031C SONOS storage device with side gate laminate and its manufacturing method |
| 03/19/2008 | CN100376020C A method for manufacturing transistor with extending gate |
| 03/18/2008 | US7345934 Multi-state memory |