Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2008
02/21/2008WO2008021204A2 Termination design for deep source electrode mosfet
02/21/2008WO2008020982A2 Semiconductor junction device having reduced leakage current and method of forming same
02/21/2008WO2008020911A2 High power insulated gate bipolar transistors
02/21/2008WO2008020566A1 Semiconductor device, semiconductor device manufacturing method and display device
02/21/2008WO2008020072A1 High-voltage mos transistor device and method of making the same
02/21/2008WO2008005377A3 Selective spacer formation on transistors of different classes on the same device
02/21/2008WO2007147137A3 Stacked die package for mems resonator system
02/21/2008WO2007145790A9 An integrated circuit device having barrier and method of fabricating the same
02/21/2008WO2007119321A3 Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same
02/21/2008WO2007038343B1 Power semiconductor device with integrated passive component
02/21/2008WO2006026961A3 Gate-controlled atomic switch
02/21/2008US20080045027 Method for fabricating semiconductor intergrated circuit device
02/21/2008US20080045022 Semiconductor Device Manufacturing Method
02/21/2008US20080045010 Reducing silicon attack and improving resistivity of tungsten nitride film
02/21/2008US20080044996 Contact structure of semiconductor device, manufacturing method thereof, thin film transistor array panel including contact structure, and manufacturing method thereof
02/21/2008US20080044994 Semiconductor device capable of threshold voltage adjustment by applying an external voltage
02/21/2008US20080044987 ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXIAL COMPRESSIVE STRAIN
02/21/2008US20080044983 Element formation substrate, method of manufacturing the same, and semiconductor device
02/21/2008US20080044969 Turn-on-efficient bipolar structures with deep n-well for on-chip esd protection
02/21/2008US20080044968 Method for improving transistor performance through reducing the salicide interface resistance
02/21/2008US20080044966 ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXIAL COMPRESSIVE STRAIN
02/21/2008US20080044963 Tft substrate for liquid crystal display apparatus and method of manufacturing the same
02/21/2008US20080044962 Electro-optical device and thin film transistor and method for forming the same
02/21/2008US20080044940 Laminating System
02/21/2008US20080044589 CVD system and substrate cleaning method
02/21/2008US20080044556 In-line deposition processes for circuit fabrication
02/21/2008US20080043792 High speed data channel including a cmos vcsel driver and a high performance photodetector and cmos photoreceiver
02/21/2008US20080043530 Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell
02/21/2008US20080043529 Novel Multi-State Memory
02/21/2008US20080043526 Operating Techniques for Reducing Program and Read Disturbs of a Non-Volatile Memory
02/21/2008US20080043509 Memory device using antifuses
02/21/2008US20080043164 Array substrate having color filter on the film transistor structure for LCD device and method of fabricating the same
02/21/2008US20080042919 Field effect transistor and a linear antenna switch arm
02/21/2008US20080042584 Method of manufacturing thin film transistor
02/21/2008US20080042298 Semiconductor devices and methods of fabricating the same
02/21/2008US20080042289 High performance system-on-chip using post passivation process
02/21/2008US20080042276 System and method for reducing stress-related damage to ball grid array assembly
02/21/2008US20080042271 Trace Design to Minimize Electromigration Damage to Solder Bumps
02/21/2008US20080042264 Apparatus and Methods for Cooling Semiconductor Integrated Circuit Package Structures
02/21/2008US20080042244 Nitride Compound Semiconductor Element and Production Method Therefor
02/21/2008US20080042243 Phase change memory devices and methods for fabricating the same
02/21/2008US20080042242 High voltage sensor device
02/21/2008US20080042241 Voltage-controlled semiconductor structure, resistor, and manufacturing processes thereof
02/21/2008US20080042240 Semiconductor device and method of manufacturing the same
02/21/2008US20080042239 High performance system-on-chip using post passivation process
02/21/2008US20080042238 High performance system-on-chip using post passivation process
02/21/2008US20080042237 Semiconductor device and method of manufacturing the same
02/21/2008US20080042236 Integrated circuit system employing gate shield and/or ground shield
02/21/2008US20080042235 Semiconductor memory device
02/21/2008US20080042234 Electric fuse circuit and electronic component
02/21/2008US20080042233 Semiconductor device having imprived electrical characteristics and method of manufacturing the same
02/21/2008US20080042232 Isolation structures for integrated circuits and modular methods of forming the same
02/21/2008US20080042226 Surface-shape sensor and method of manufacturing the same
02/21/2008US20080042225 Ultrasonic transducer and manufacturing method
02/21/2008US20080042224 Soi Disks Comprising Mems Structures and Filled Isolating Trenches Having a Defined Cross-Section
02/21/2008US20080042223 Microelectromechanical system package and method for making the same
02/21/2008US20080042222 Trench mosfet with copper metal connections
02/21/2008US20080042221 High voltage transistor
02/21/2008US20080042220 Gate electrode forming method for semiconductor device
02/21/2008US20080042219 finFET Device
02/21/2008US20080042218 Semiconductor memory device
02/21/2008US20080042217 Array substrate for a liquid crystal display device and manufacturing method of the same
02/21/2008US20080042216 Formation of standard voltage threshold and low voltage threshold mosfet devices
02/21/2008US20080042215 Strained complementary metal oxide semiconductor (cmos) on rotated wafers and methods thereof
02/21/2008US20080042214 Semiconductor device
02/21/2008US20080042213 Complementary metal-oxide-semiconductor transistor and method of manufacturing the same
02/21/2008US20080042211 Strained semiconductor channels and methods of formation
02/21/2008US20080042210 Semiconductor device and method of fabricating thereof
02/21/2008US20080042209 Semiconductor system using germanium condensation
02/21/2008US20080042206 Integrated circuit device having input/output electrostatic discharge protection cell equipped with electrostatic discharge protection element and power clamp
02/21/2008US20080042203 Single and double-gate pseudo-fet devices for semiconductor materials evaluation
02/21/2008US20080042201 Semiconductor Devices and Methods of Making
02/21/2008US20080042200 Thin-film transistor and fabrication method thereof
02/21/2008US20080042198 Demos structure
02/21/2008US20080042197 High voltage field effect transistor
02/21/2008US20080042196 Circuit and Method of Reducing Body Diode Reverse Recovery Time of Lateral Power Semiconductor Devices
02/21/2008US20080042195 Semiconductor device including recessed-channel-array mosfet having a higher operational speed
02/21/2008US20080042194 Trench mosfet with terraced gate and manufacturing method thereof
02/21/2008US20080042193 Semiconductor device
02/21/2008US20080042192 Semiconductor memory device including charge trap layer with stacked nitride layers
02/21/2008US20080042191 Non-volatile memory device and method of fabricating the same
02/21/2008US20080042190 Electrically erasable programmable read-only memory cell and memory device and manufacturing method thereof
02/21/2008US20080042189 Split gate nonvolatile memory and manufacturing method of the same
02/21/2008US20080042188 Nonvolatile semiconductor memory
02/21/2008US20080042187 Flash Memory Device And A Method Of Fabricating The Same
02/21/2008US20080042186 Non-volatile memory device and method of manufacturing the same
02/21/2008US20080042185 Eeprom memory array having 5f2 cells
02/21/2008US20080042184 Highly reliable NAND flash memory using five side enclosed floating gate storage elements
02/21/2008US20080042183 Nonvolatile Memories with Shaped Floating Gates
02/21/2008US20080042182 Capacitor and method of manufacturing the same
02/21/2008US20080042179 Memory arrays and methods of fabricating memory arrays
02/21/2008US20080042174 Field effect transistors (fets) with inverted source/drain metallic contacts, and method of fabricating same
02/21/2008US20080042173 Semiconductor device and method of manufacturing the same
02/21/2008US20080042172 Semiconductor component having a space saving edge structure
02/21/2008US20080042171 Transistor arrangement, sense-amplifier arrangement and methods of manufacturing the same via a phase shift mask
02/21/2008US20080042169 Doped plug for CCD gaps
02/21/2008US20080042167 Phase change materials and associated memory devices
02/21/2008US20080042166 STRAINED Si MOSFET ON TENSILE-STRAINED SiGe-ON-INSULATOR (SGOI)
02/21/2008US20080042165 Semiconductor device and method for manufacturing semiconductor device
02/21/2008US20080042164 Power semiconductor component