Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2008
03/06/2008US20080054352 Semiconductor device and method of manufacturing semiconductor device
03/06/2008US20080054351 Power semiconductor device and manufacturing method therefor
03/06/2008US20080054350 Vertical field effect transistor arrays and methods for fabrication thereof
03/06/2008US20080054349 Reduced-resistance finfets by sidewall silicidation and methods of manufacturing the same
03/06/2008US20080054348 Semiconductor device and a method of fabricating the same
03/06/2008US20080054347 Composite stressors in MOS devices
03/06/2008US20080054346 Semiconductor device
03/06/2008US20080054345 Electrically erasable and programmable read only memory device and method of manufacturing the same
03/06/2008US20080054344 Method of fabricating flash memory device
03/06/2008US20080054343 Semiconductor Device and Method for Fabricating the Same
03/06/2008US20080054342 Memory array having floating gate semiconductor device
03/06/2008US20080054341 Semiconductor memory device and method for manufacturing same
03/06/2008US20080054340 Nonvolatile semiconductor memory device including improved gate electrode
03/06/2008US20080054339 Flash memory device with single-poly structure and method for manufacturing the same
03/06/2008US20080054338 Flash memory device
03/06/2008US20080054337 Flash Memory Device and Method for Manufacturing the Flash Memory Device
03/06/2008US20080054336 Scalable Electrically Eraseable And Programmable Memory
03/06/2008US20080054335 Embedded NV Memory and Method of Manufacturing the Same
03/06/2008US20080054334 Flash memory device
03/06/2008US20080054333 Semiconductor Device and Manufacturing Method Thereof
03/06/2008US20080054332 Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition
03/06/2008US20080054331 Non-volatile memory cell with metal capacitor
03/06/2008US20080054329 Semiconductor device and method of fabricating the same
03/06/2008US20080054328 Semiconductor device and method of manufacturing the same
03/06/2008US20080054327 Voltage controller
03/06/2008US20080054326 Low resistance contact structure and fabrication thereof
03/06/2008US20080054324 Integrated circuit including a gate electrode
03/06/2008US20080054323 Thin film phase change memory cell formed on silicon-on-insulator substrate
03/06/2008US20080054322 Memory and manufacturing method thereof
03/06/2008US20080054316 Strained fully depleted silicon on insulator semiconductor device
03/06/2008US20080054315 Method for manufacturing semiconductor device by using two step pocket implant process
03/06/2008US20080054314 Field effect transistor having a stressed contact etch stop layer with reduced conformality
03/06/2008US20080054313 Device structures including backside contacts, and methods for forming same
03/06/2008US20080054312 Junction field effect transistor and production method for the same
03/06/2008US20080054310 Capacitorless DRAM memory cell comprising a partially-depleted MOSFET device comprising a gate insulator in two parts
03/06/2008US20080054309 High voltage device and manufacturing method thereof
03/06/2008US20080054303 Field effect transistor with enhanced insulator structure
03/06/2008US20080054302 Field effect transistor and method of manufacturing the same
03/06/2008US20080054299 Image sensor and fabricating method thereof
03/06/2008US20080054297 Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier
03/06/2008US20080054279 Phosphor Position in Light Emitting Diodes
03/06/2008US20080054270 Semiconductor memory device and the production method
03/06/2008US20080054269 Method of Fabricating A Semiconductor Device
03/06/2008US20080054268 Display device and method of manufacturing the display device
03/06/2008US20080054267 Display apparatus and manufacturing method of the same
03/06/2008US20080054266 Thin film semiconductor device and method for manufacturing thin film semiconductor device
03/06/2008US20080054265 Display Device and Electronic Device
03/06/2008US20080054264 Thin film transistor array substrate and manufacturing method thereof
03/06/2008US20080054258 to the use of perylene diimide derivatives as air-stable n-type organic semiconductors. for air stable field effect transistors
03/06/2008US20080054255 Substrate structures and fabrication methods thereof
03/06/2008US20080054254 Programmable polyelectrolyte electrical switches
03/06/2008US20080054253 Single-Electron Tunnel Junction for a Complementary Metal-Oxide Device and Method of Manufacturing the Same
03/06/2008US20080054252 Semiconductor layer structure with over lattice
03/06/2008US20080054247 Semiconductor layer structure with superlattice
03/06/2008US20080054244 Phase change memory device and method of forming the same
03/06/2008US20080054228 one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film
03/06/2008US20080053952 Carrier transporter formed by mutually crosslinked, functionalized carbon nanotubes having a network structure; differentiation of oxide layers on interfaces allowing for different barrier levels of high frequency response and heat resistance; superior safety; semiconductor properties; stability
03/06/2008DE112006001169T5 Verfahren zur Herstellung eines SOI-Bauelements A method of manufacturing an SOI-device
03/06/2008DE10250868B4 Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors Vertically integrated field-effect transistor, field effect transistor arrangement and method for manufacturing a vertically-integrated field-effect transistor
03/06/2008DE10240107B4 Randabschluss für Leistungshalbleiterbauelement und für Diode sowie Verfahren zur Herstellung einer n-leitenden Zone für einen solchen Randabschluss Edge termination for power semiconductor component and diode and method for producing an n-type region for such an edge termination
03/06/2008DE102004025423B4 Dünnfilm-Feldeffekt-Transistor mit Gate-Dielektrikum aus organischem Material und Verfahren zu dessen Herstellung Thin film field effect transistor having gate dielectric of organic material and process for its preparation
03/06/2008CA2662526A1 High operation temperature split-off band infrared detectors
03/05/2008EP1895596A1 DRAM memory cell with no capacitance made up of a partially deserted MOSFET-type device comprising a gate insulator in two parts
03/05/2008EP1895595A2 Semiconductor device and electric power conversion apparatus therewith
03/05/2008EP1895594A2 Non-volatile memory cell with metal capacitor
03/05/2008EP1895582A1 Semiconducteur device and method for manufacturing same
03/05/2008EP1895579A1 Diamond semiconductor element and method for manufacturing same
03/05/2008EP1895577A1 Etching composition for metal material and method for manufacturing semiconductor device by using same
03/05/2008EP1895569A1 Precision high-frequency capacitor formed on semiconductor substrate
03/05/2008EP1895568A1 Precision high-frequency capacitor formed on semiconductor substrate
03/05/2008EP1894252A2 Monolithically integrated semiconductor assembly comprising a power component and method for producing a monolithically integrated semiconductor assembly
03/05/2008EP1894251A2 Method and device with improved base access resistance for npn bipolar transistor
03/05/2008EP1894250A1 Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
03/05/2008EP1894243A2 Semiconductor device having a polysilicon electrode
03/05/2008EP1894232A2 Short channel semiconductor device fabrication
03/05/2008EP1894231A2 Tft charge storage memory cell having high-mobility corrugated channel
03/05/2008EP1894202A2 Word line driver for dram embedded in a logic process
03/05/2008EP1714292B1 Non-volatile memory cell using high-k material and inter-gate programming
03/05/2008EP1692725B1 Trench insulated gate field effect transistor
03/05/2008EP1673671B1 Power system inhibit method and device and structure therefor
03/05/2008EP1537605A4 Nanotube permeable base transistor and method of making same
03/05/2008EP1514123B1 Monolithic silicon acceleration sensor
03/05/2008EP1472741A4 Band gap compensated hbt
03/05/2008EP1163700A4 High-voltage transistor with multi-layer conduction region
03/05/2008EP1163697A4 Method of making a high-voltage transistor with multiple lateral conduction layers
03/05/2008CN101138093A Trench type MOSFET and its fabrication process
03/05/2008CN101138092A Method and apparatus for improved ESD performance
03/05/2008CN101138091A Technique for the growth of planar semi-polar gallium nitride
03/05/2008CN101138085A Low k dielectric cvd film formation process with in-situ imbedded nanolayers to improve mechanical properties
03/05/2008CN101138084A Semiconductor device package with bump overlying a polymer layer
03/05/2008CN101138083A Semiconductor package
03/05/2008CN101138082A Flexible active matrix display backplane and method of manufacture
03/05/2008CN101138081A Integrated circuit and method for its manufacture
03/05/2008CN101138077A Manufacture of lateral semiconductor devices
03/05/2008CN101138074A Iii-v nitride semiconductor device and method of forming electrode
03/05/2008CN101136441A Schottky barrier diode structure
03/05/2008CN101136440A Schottky barrier diode
03/05/2008CN101136439A Semiconductor device
03/05/2008CN101136438A Thin film transistor and manufacturing method and semiconductor device
03/05/2008CN101136437A Semiconductor device and manufacturing method thereof
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