| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/07/2008 | US20080029806 Semiconductor device including nonvolatile memory and method for fabricating the same |
| 02/07/2008 | US20080029805 Semiconductor device and manufacturing method of the same |
| 02/07/2008 | US20080029804 Flash Memory Device and Method of Manufacturing the Same |
| 02/07/2008 | US20080029803 Programmable non-volatile memory cell |
| 02/07/2008 | US20080029802 Semiconductor device |
| 02/07/2008 | US20080029791 Semiconductor Device and Method of Fabricating the Same |
| 02/07/2008 | US20080029790 ALD of silicon films on germanium |
| 02/07/2008 | US20080029789 Current Aperture Transistors and Methods of Fabricating Same |
| 02/07/2008 | US20080029784 Thin film transistor array panel for a display |
| 02/07/2008 | US20080029782 Integrated ESD protection device |
| 02/07/2008 | US20080029781 One-transistor static random access memory with integrated vertical pnpn device |
| 02/07/2008 | US20080029775 Light emitting diode package with positioning groove |
| 02/07/2008 | US20080029773 III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods |
| 02/07/2008 | US20080029769 Provides two-block laser mask capable of preventing or minimizing a shot mark by sequential irradiation of each block with two different lasers; liquid crystal displays, light emitting diodes; Flat panel displays having a polycrystalline silicon thin film transistor as a switching device |
| 02/07/2008 | US20080029768 Display apparatus and method of laying out pixel circuits |
| 02/07/2008 | US20080029766 Laminated structure, production method of the same, multilayer circuit board, active matrix substrate, and electronic display |
| 02/07/2008 | US20080029765 Electronic Device |
| 02/07/2008 | US20080029764 Capacitor, method of producing the same, semiconductor device, and liquid crystal display device |
| 02/07/2008 | US20080029763 Transmission Circuit, Connecting Sheet, Probe Sheet, Probe Card, Semiconductor Inspection System and Method of Manufacturing Semiconductor Device |
| 02/07/2008 | US20080029758 Nitride semiconductor device |
| 02/07/2008 | US20080029757 Semiconductor device having a laterally injected active region |
| 02/07/2008 | US20080029756 Semiconductor buffer architecture for III-V devices on silicon substrates |
| 02/07/2008 | US20080029755 Structure for phase change memory and the method of forming same |
| 02/07/2008 | US20080029752 Phase change memory and manufacturing method thereof |
| 02/07/2008 | DE112005002274T5 Transistor mit Tunneleffekt-Pulverelektrode Transistor with tunnel effect powder electrode |
| 02/07/2008 | DE10300746B4 Nichtflüchtiges Speicherelement und Anzeigematrizen sowie deren Anwendung Nonvolatile memory element and display matrices and their application |
| 02/07/2008 | DE10256911B4 Gruppe-III-Nitrid Transistorbauelement auf Siliziumsubstrat Group III-nitride transistor device on silicon substrate |
| 02/07/2008 | DE102006035665A1 Feldeffekttransistor und Verfahren zur Herstellung eines Feldeffekttransistors Field effect transistor and method of manufacturing a field effect transistor |
| 02/06/2008 | EP1885007A1 Laminated structure, production method of the same, multilayer circuit board, active matrix substrate, and electronic display |
| 02/06/2008 | EP1885000A2 Semiconductor devices including Schottky diodes with controlled breakdown and methods of fabricating same |
| 02/06/2008 | EP1884999A1 Semiconductor device and method for manufacturing same |
| 02/06/2008 | EP1884996A2 Substrate for electro-optical device, and electronic apparatus |
| 02/06/2008 | EP1884987A1 Process for producing silicon compound |
| 02/06/2008 | EP1884986A2 Reprogrammable non-volatile storage cell and manufacturing method thereof |
| 02/06/2008 | EP1883973A1 Organic thin film transistor and active matrix display |
| 02/06/2008 | EP1883972A1 Silicon carbide device and method of fabricating the same |
| 02/06/2008 | EP1883971A1 Cathode cell design |
| 02/06/2008 | EP1883960A2 Semiconductor device with reduced metal layer stress |
| 02/06/2008 | EP1883956A2 Through-wafer interconnection |
| 02/06/2008 | EP1883955A2 Method of fabricating a bipolar transistor |
| 02/06/2008 | EP1883951A2 Methods of fabricating silicon carbide devices having smooth channels |
| 02/06/2008 | EP1883949A1 Method for preparing nanocrystalline silicon in sio2 and freestanding silicon nanoparticles |
| 02/06/2008 | EP1676343A4 Quantum dot structures |
| 02/06/2008 | CN201017891Y 100mA and above plastic capsulation high voltage diode |
| 02/06/2008 | CN201017890Y Composite grid, grid source self-isolation VDMOS, IGBT power device |
| 02/06/2008 | CN201017889Y VDMOS, IGBT power device using PSG doping technique |
| 02/06/2008 | CN201017888Y Diamond transistor with conductive coating prepared by arc discharge plasma |
| 02/06/2008 | CN201017887Y Mesa type solid discharging tube core |
| 02/06/2008 | CN101120456A Organic thin film transistor |
| 02/06/2008 | CN101120448A Power semiconductor device |
| 02/06/2008 | CN101120443A Semiconductor apparatus |
| 02/06/2008 | CN101120439A Semiconductor devices and methods of manufacture thereof |
| 02/06/2008 | CN101120437A Dielectric film and method for forming the same |
| 02/06/2008 | CN101120433A Methods and devices for fabricating and assembling printable semiconductor elements |
| 02/06/2008 | CN101120123A Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same |
| 02/06/2008 | CN101118931A Devices and operation methods for reducing second bit effect in memory device |
| 02/06/2008 | CN101118930A Unsymmetrical thin-film transistor structure |
| 02/06/2008 | CN101118929A Semiconductor device and method for forming the same |
| 02/06/2008 | CN101118928A Strained channel mos device |
| 02/06/2008 | CN101118927A Semiconductor device |
| 02/06/2008 | CN101118926A Multi-order non-volatility memory and manufacturing method and operation method therefor |
| 02/06/2008 | CN101118925A Metal-oxide semiconductor transistor element and manufacturing method and improving method therefor |
| 02/06/2008 | CN101118924A Silicon device structure of high puncture voltage insulators and method for making same |
| 02/06/2008 | CN101118908A Single programmable memory and its making method |
| 02/06/2008 | CN101118859A TiSiN layer on semiconductor device |
| 02/06/2008 | CN101118857A Semiconductor device and method for fabricating the same |
| 02/06/2008 | CN101118856A Semiconductor structure and structure of non-volatility memory and manufacturing method therefor |
| 02/06/2008 | CN101118786A A double-bias erase method for memory devices |
| 02/06/2008 | CN101118359A Liquid crystal display and mfg. method therefor |
| 02/06/2008 | CN100367528C Switch element having memory effect |
| 02/06/2008 | CN100367517C Semiconductor storage device and its manufacturing method |
| 02/06/2008 | CN100367516C Thin film transistor device and method of manufacturing same |
| 02/06/2008 | CN100367515C Field effect transistor (FET), integrated circuit (IC) including the FETs and a method of forming IC |
| 02/06/2008 | CN100367514C Semiconductor device and producing method thereof |
| 02/06/2008 | CN100367513C Semiconductor device and its manufacturing method |
| 02/06/2008 | CN100367512C Quantum-size electronic devices and operating conditions thereof |
| 02/06/2008 | CN100367511C Bipolar transistor |
| 02/06/2008 | CN100367510C Semiconductor device with edge structure |
| 02/06/2008 | CN100367509C High-resisting silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 02/06/2008 | CN100367508C Improved light emitting diode |
| 02/06/2008 | CN100367506C Byte-operational nonvolatile semiconductor memory device |
| 02/06/2008 | CN100367505C 背栅FinFET SRAM Back gate FinFET SRAM |
| 02/06/2008 | CN100367503C Integrated circuit structure and method for making same |
| 02/06/2008 | CN100367500C Integrated circuit structure and its forming method |
| 02/06/2008 | CN100367497C Semiconductor device and method for fabricating the same |
| 02/06/2008 | CN100367478C A super-self-aligned trench-gate DMOS |
| 02/06/2008 | CN100367470C Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer |
| 02/06/2008 | CN100367465C Method of forming different silicide portions on different silicon- containing regions in a semiconductor device |
| 02/06/2008 | CN100367463C Method for the production of a short channel field effect transistor |
| 02/06/2008 | CN100367462C Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate |
| 02/06/2008 | CN100367325C Transistor, method of fabricating the same, and light emitting display comprising the same |
| 02/06/2008 | CN100367103C Substrate, liquid crystal display having the substrate, and method for producing substrate |
| 02/06/2008 | CN100367101C LCD device |
| 02/06/2008 | CN100367100C Method for making display device picture equalization and display device for making picture equalization |
| 02/06/2008 | CN100367087C Method for clearing image residue and its liquid crystal display |
| 02/06/2008 | CN100367085C Liquid crystal display device and driving method thereof |
| 02/05/2008 | US7327541 Operation of dual-directional electrostatic discharge protection device |
| 02/05/2008 | US7327431 Liquid crystal display device and method for fabricating the same |
| 02/05/2008 | US7327412 Liquid crystal electro-optic device |
| 02/05/2008 | US7327392 Signal processing apparatus |