Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2008
02/21/2008US20080042163 Thermal Transfer Device and System and Method Incorporating Same
02/21/2008US20080042152 Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors
02/21/2008US20080042146 Light-emitting device having improved ambient contrast
02/21/2008US20080042144 Electron emitting device with projection comprising base portion and electron emission portion
02/21/2008US20080042142 Highly Heat-Resistant Synthetic Polymer Compound and High Withstand Voltage Semiconductor Device
02/21/2008US20080042140 Three dimensional integrated circuit and method of design
02/21/2008US20080042138 Display device and method of making the same
02/21/2008US20080042136 Pixel Unit Structure of Self-Illumination Display with Low-Reflection
02/21/2008US20080042134 Array substrate for liquid crystal display device and method of fabricating the same
02/21/2008US20080042133 Thin film transistor array substrate and method of fabricating the same
02/21/2008US20080042132 Display panel and method for manufacturing the same
02/21/2008US20080042131 System for displaying images including thin film transistor device and method for fabricating the same
02/21/2008US20080042126 Ballistic direct injection NROM cell on strained silicon structures
02/21/2008US20080042125 High speed data channel including a cmos vcsel driver and a high performance photodetector and cmos photoreceiver
02/21/2008US20080042124 Semiconductor device and method for manufacturing the same
02/21/2008US20080042121 METHOD FOR DEPOSITION OF MAGNESIUM DOPED (Al, In, Ga, B)N LAYERS
02/21/2008US20080042120 Integrated circuit device, manufacturing method thereof, and display device
02/21/2008US20080042117 Phase-change memory and fabrication method thereof
02/21/2008US20080041157 Acceleration sensor and method of manufacturing the same
02/21/2008US20080041156 Semiconductor acceleration sensor
02/21/2008DE112006000651T5 Vertikale Speichervorrichtung und Verfahren Vertical Storage Apparatus and Method
02/21/2008DE102007027446A1 Halbleitersubstrat auf Gruppe-III-V-Nitrid-Basis und lichtemittierende Vorrichtung auf Gruppe-III-V-Nitrid-Basis Semiconductor substrate to the Group III-V nitride-based light emitting device and the group III-V nitride-based
02/21/2008DE102006038487A1 Semiconductor rectifier, has two transistors, where voltage rising/falling over one transistor is applied to control electrode of other transistor for increasing voltage at latter transistor, when voltage is applied at reverse direction
02/21/2008DE10126308B4 Rückwärtssperrender Leistungstransistor Reverse-locking power transistor
02/21/2008CA2660609A1 Hydrophone array module
02/21/2008CA2658567A1 Jfet with built in back gate in either soi or bulk silicon
02/20/2008EP1890336A1 High-voltage MOS transistor device and method of making the same
02/20/2008EP1890335A1 Lateral DMOS device and method of making the same
02/20/2008EP1890323A2 Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
02/20/2008EP1889359A2 Linear variable voltage diode capacitor and adaptive matching networks
02/20/2008EP1889343A2 High current electrical switch and method
02/20/2008EP1889299A2 Non-volatile two-transistor programmable logic cell and array layout
02/20/2008EP1889298A1 Thin film transistor having channel comprising zinc oxide and manufacturing method thereof
02/20/2008EP1889297A1 Group iii nitride epitaxial layers on silicon carbide substrates
02/20/2008EP1889296A1 Channel transistor based on germanium encased by a gate electrode and method for producing this transistor
02/20/2008EP1889294A1 One-time programmable crosspoint memory with a diode as an antifuse
02/20/2008EP1888822A1 Mixture for doping semiconductors
02/20/2008EP1888821A1 Low basal plane dislocation bulk grown sic wafers
02/20/2008EP1887912A2 Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
02/20/2008EP1488460A4 Doped group iii-v nitride materials, and microelectronic devices and device precursor structures comprising same
02/20/2008EP1374310A4 Nanofabrication
02/20/2008CN101128940A Thin film transistor having channel comprising zinc oxide and manufacturing method thereof
02/20/2008CN101128939A Thin film transistor panel
02/20/2008CN101128938A Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing process
02/20/2008CN101128937A Semiconductor device
02/20/2008CN101128929A Semiconductor integrated circuit, semiconductor integrated circuit control method, and signal transmission circuit
02/20/2008CN101128923A Control gate profile for flash technology
02/20/2008CN101127368A Gallium nitride based diodes with low forward voltage and low reverse current operation
02/20/2008CN101127367A Nonvolatile semiconductor memory
02/20/2008CN101127366A Display device and method of making the same
02/20/2008CN101127365A Isolated gate type bipolar transistor
02/20/2008CN101127364A Polysilicon control etch-back indicator
02/20/2008CN101127329A Flash memory device and a method of fabricating the same
02/20/2008CN101127326A Semiconductor device and manufacturing method thereof
02/20/2008CN101127307A Semiconductor device and method of manufacturing the same
02/20/2008CN101127306A Groove power semiconductor device and its making method
02/20/2008CN101127297A Semiconductor device having imprived electrical characteristics and method of manufacturing the same
02/20/2008CN101127240A Method for reducing effects of coupling between storage elements of a non-volatile memory
02/20/2008CN101126879A Liquid crystal display and method for fabricating the same
02/20/2008CN101125482A Structure with through hole, production method thereof, and liquid discharge head
02/20/2008CN100370634C Thermoelectric modular
02/20/2008CN100370627C Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same
02/20/2008CN100370626C Horizontal junction field-effect transistor
02/20/2008CN100370625C Integrated high-voltage P-type LDMOS transistor structure and production thereof
02/20/2008CN100370624C Semiconductor device allowing modulation of a gain coefficient and a logic circuit provided with the same
02/20/2008CN100370623C Semiconductor device and method for manufacturing the same
02/20/2008CN100370622C Mesfet device and its forming method
02/20/2008CN100370621C Semiconductor device and manufacturing method thereof
02/20/2008CN100370615C 半导体装置 Semiconductor device
02/20/2008CN100370602C Board for mounting semiconductor element, method for manufacturing same, and semiconductor device
02/20/2008CN100370600C Method of manufacturing a semiconductor device
02/20/2008CN100370596C Storage mfg. method and storage
02/20/2008CN100370594C Method for manufacturing cell transistor
02/20/2008CN100370491C 发光装置及其制作方法 Light-emitting device and manufacturing method thereof
02/20/2008CN100370351C Liquid crystal display device and manufacturing method thereof
02/20/2008CN100370349C Thin film transistor circuit device, production method thereof and liquid crystal display using the thin film transistor circuit device
02/20/2008CN100370348C Flexible electronic device and its manufacturing method
02/20/2008CN100370347C Transverse electric-field type liquid crystal display device, its making method and scanning exposure device
02/20/2008CN100370344C Electronic device, display device and production method thereof
02/20/2008CN100370343C Liquid crystal display device
02/20/2008CN100370340C Compensation film, manufacturing method thereof and liquid crystal display using the same
02/20/2008CN100370332C Array substrate for a transflective liquid crystal display device and fabricating method thereof
02/20/2008CN100370318C Electrooptical apparatus and electronic apparatus
02/19/2008US7333912 Multiple sensor system
02/19/2008US7333733 Optoelectronic clock generator producing high frequency optoelectronic pulse trains with variable frequency and variable duty cycle and low jitter
02/19/2008US7333369 Nonvolatile semiconductor memory
02/19/2008US7333367 Flash memory devices including multiple dummy cell array regions
02/19/2008US7333362 Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane
02/19/2008US7333351 Electronic circuit control element with tap element
02/19/2008US7333170 In Plane switching mode liquid crystal display device including 4 sub-pixels having different areas and fabrication method thereof
02/19/2008US7333161 Forming method of liquid crystal layer using ink jet system
02/19/2008US7333159 Liquid crystal display device having function of temperature maintenance
02/19/2008US7333079 Organic EL display and active matrix substrate
02/19/2008US7333072 Thin film integrated circuit device
02/19/2008US7332820 Stacked die in die BGA package
02/19/2008US7332819 Stacked die in die BGA package
02/19/2008US7332817 Die and die-package interface metallization and bump design and arrangement
02/19/2008US7332810 Integrated circuit device and method of producing the same
02/19/2008US7332806 Thin, thermally enhanced molded package with leadframe having protruding region
02/19/2008US7332802 Package for semiconductor light emitting element and semiconductor light emitting device