| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/31/2008 | US20080024415 Display panel, mask and method of manufacturing the same |
| 01/31/2008 | US20080023839 Molybdenum-based electrode with carbon nanotube growth |
| 01/31/2008 | US20080023837 Method for fabricating interconnect and interconnect fabricated thereby |
| 01/31/2008 | US20080023803 Method for forming vertical structures in a semiconductor device |
| 01/31/2008 | US20080023801 Method for producing an integrated circuit indlcuding a semiconductor |
| 01/31/2008 | US20080023800 polishing the wafer surfaces with cubic boron nitride abrasive particles |
| 01/31/2008 | US20080023799 Nitride semiconductor device and manufacturing method of the same |
| 01/31/2008 | US20080023798 Memory cells with an anode comprising intercalating material and metal species dispersed therein |
| 01/31/2008 | US20080023797 Semiconductor device and method for manufacturing same |
| 01/31/2008 | US20080023796 Semiconductor device and method of manufacturing the same |
| 01/31/2008 | US20080023795 Semiconductor devices and method of manufacturing them |
| 01/31/2008 | US20080023794 Integrated circuit with bipolar transistor |
| 01/31/2008 | US20080023793 Semiconductor device |
| 01/31/2008 | US20080023792 Filler capacitor with a multiple cell height |
| 01/31/2008 | US20080023791 High performance integrated inductor |
| 01/31/2008 | US20080023790 Mixed-use memory array |
| 01/31/2008 | US20080023789 Reprogrammable electrical fuse |
| 01/31/2008 | US20080023788 Fuse box of semiconductor device formed using conductive oxide layer and method for forming the same |
| 01/31/2008 | US20080023787 Semiconductor device |
| 01/31/2008 | US20080023786 Semiconductor structure of a high side driver and method for manufacturing the same |
| 01/31/2008 | US20080023779 Photoelectric conversion element |
| 01/31/2008 | US20080023778 Fully Silicided Gate Electrodes and Method of Making the Same |
| 01/31/2008 | US20080023777 Semiconductor Device and Method of Manufacture Thereof |
| 01/31/2008 | US20080023776 Metal oxide semiconductor device with improved threshold voltage and drain junction breakdown voltage and method for fabricating same |
| 01/31/2008 | US20080023775 ASYMMETRIC FIELD EFFECT TRANSISTORS (FETs) |
| 01/31/2008 | US20080023773 Semiconductor device and method of manufacturing the same |
| 01/31/2008 | US20080023772 Semiconductor device including a germanium silicide film on a selective epitaxial layer |
| 01/31/2008 | US20080023771 Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the same |
| 01/31/2008 | US20080023770 Stacked semiconductor devices and methods of manufacturing the same |
| 01/31/2008 | US20080023769 Semiconductor Devices Having Selectively Tensile Stressed Gate Electrodes and Methods of Fabricating the Same |
| 01/31/2008 | US20080023764 Semiconductor memory device and manufacturing method of the same |
| 01/31/2008 | US20080023763 Threshold-voltage trimming of insulated-gate power devices |
| 01/31/2008 | US20080023762 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology |
| 01/31/2008 | US20080023761 Semiconductor devices and methods of fabricating the same |
| 01/31/2008 | US20080023760 Semiconductor device with increased breakdown voltage |
| 01/31/2008 | US20080023759 Low voltage high density trench-gated power device with uniformly doped channel and its edge termination |
| 01/31/2008 | US20080023758 Semiconductor device |
| 01/31/2008 | US20080023757 Semiconductor device having fin-field effect transistor and manufacturing method thereof |
| 01/31/2008 | US20080023756 Semiconductor device and fabricating method thereof |
| 01/31/2008 | US20080023755 Semiconductor device and method for fabricating the same |
| 01/31/2008 | US20080023754 Semiconductor device with a wave-shaped trench or gate and method for manufacturing the same |
| 01/31/2008 | US20080023753 Semiconductor device and method for fabricating the same |
| 01/31/2008 | US20080023752 BORON DOPED SiGe HALO FOR NFET TO CONTROL SHORT CHANNEL EFFECT |
| 01/31/2008 | US20080023751 Integrated circuit memory system employing silicon rich layers |
| 01/31/2008 | US20080023750 Memory cell system with multiple nitride layers |
| 01/31/2008 | US20080023749 Non-volatile memory device and methods of operating and fabricating the same |
| 01/31/2008 | US20080023748 Self-aligned contacts to source/drain regions |
| 01/31/2008 | US20080023747 Semiconductor memory device with memory cells on multiple layers |
| 01/31/2008 | US20080023746 Semiconductor devices having dielectric layers and methods of forming the same |
| 01/31/2008 | US20080023744 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 01/31/2008 | US20080023743 Semiconductor memory device and manufacturing method of the same |
| 01/31/2008 | US20080023742 Semiconductor device with a surrounded channel transistor |
| 01/31/2008 | US20080023741 Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof |
| 01/31/2008 | US20080023740 Novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same |
| 01/31/2008 | US20080023735 Light sensing element, array substrate having the same and liquid crystal display apparatus having the same |
| 01/31/2008 | US20080023733 Fabrication methods for compressive strained-silicon and transistors using the same |
| 01/31/2008 | US20080023732 Use of carbon co-implantation with millisecond anneal to produce ultra-shallow junctions |
| 01/31/2008 | US20080023731 Three-dimensional cascaded power distribution in a semiconductor device |
| 01/31/2008 | US20080023730 Imaging apparatus and a device for use therewith |
| 01/31/2008 | US20080023728 Semiconductor Integrated Circuits With Stacked Node Contact Structures |
| 01/31/2008 | US20080023726 Schottky gate metallization for semiconductor devices |
| 01/31/2008 | US20080023721 Light Emitting Diode Package Having Multiple Molding Resins |
| 01/31/2008 | US20080023706 Nitride semiconductor device |
| 01/31/2008 | US20080023705 Thin-film transistor substrate, method of manufacturing the same and display panel having the same |
| 01/31/2008 | US20080023704 Display Device and Fabrication Method Thereof |
| 01/31/2008 | US20080023703 System and method for manufacturing a thin-film device |
| 01/31/2008 | US20080023698 Device having zinc oxide semiconductor and indium/zinc electrode |
| 01/31/2008 | US20080023694 Display device and method of manufacturing the same |
| 01/31/2008 | US20080023693 Methods, devices and compositions for depositing and orienting nanostructures |
| 01/31/2008 | US20080023692 Transistor having a strained channel region including a performance enhancing material composition |
| 01/31/2008 | US20080023688 Efficient carrier injection in a semiconductor device |
| 01/31/2008 | US20080023687 Light emitting device and method of manufacturing the same |
| 01/31/2008 | US20080023501 Tap Unit for a Beverage Dispenser |
| 01/31/2008 | DE112006000413T5 Steuergateprofil für Flash-Technologie Control gate profile for Flash technology |
| 01/31/2008 | DE10303682B4 Verfahren zum Bewerten lateraler Dotier- und/oder Ladungsträgerprofile A method for evaluating lateral doping and / or carrier profiles |
| 01/31/2008 | DE102007033918A1 Halbleiterbauelement und Herstellungsverfahren davon A semiconductor device and manufacturing method thereof |
| 01/31/2008 | DE102007028602A1 FET for use in e.g. microelectronic device, has heavily doped source/drain region of substrate arranged beneath pillar and remote from insulated gate |
| 01/31/2008 | DE102006046237A1 Semiconductor-layer structure useful in optoelectronic component, comprises a super lattice out of alternating piled layers of a first and a second type |
| 01/31/2008 | DE102006046228A1 Semiconductor layer structure for optoelectronic component e.g. LED and laser diode, has stacked layers of two types comprising layer thicknesses that are increased with increased distance of active layers by layer to layer |
| 01/31/2008 | DE102006046227A1 Semiconductor layer structure has super lattice with alternative stacked layers of connecting semiconductors of one composition and another composition, where stacked layers have doping agents in specific concentration |
| 01/31/2008 | DE102006035121A1 Bipolar transistor comprises semiconductor region of type of conductivity and insulation structure, which surrounds semiconductor region in semiconductor body of other conductivity type opposite to former conductivity type |
| 01/31/2008 | DE102006034589A1 Semiconductor arrangement for limiting over-current e.g. during start-up phase of motor, has limiter unit including dual structure with two lateral current flow channels, where arrangement is integrated in hybrid or monolithic manner |
| 01/31/2008 | DE102006033692A1 Laterally diffused metal oxide semiconductor transistor for use as high voltage transistor, has structured dielectric zone coated on semiconductor body over drift zone and under gate, where dielectric zone has adapted edge profile |
| 01/31/2008 | DE102006033505A1 Halbleitervorrichtung mit reduziertem "Tail"-Widerstand und Herstellungsverfahren für eine solche A semiconductor device with reduced "tail" resistance and manufacturing method for such a |
| 01/31/2008 | DE10164820B4 Vorrichtung zum Spritzgießen von Formkörpern aus Kunststoff Apparatus for injection molding of moldings made from plastic |
| 01/30/2008 | EP1883119A2 Semiconductor layer structure with overlay grid |
| 01/30/2008 | EP1883116A1 Semiconductor device with high breakdown voltage and manufacturing method thereof |
| 01/30/2008 | EP1883115A1 An enhancement mode field effect device and the method of production thereof |
| 01/30/2008 | EP1883114A1 Heterojunction semiconductor device and method of producing the semiconductor device |
| 01/30/2008 | EP1883110A2 Thin-film transistor substrate, method of manufacturing the same and display panel having the same |
| 01/30/2008 | EP1883102A2 Method for improving the quality of an SiC crystal and SiC semiconductor device |
| 01/30/2008 | EP1883101A2 Method for producing electronic device and electronic device |
| 01/30/2008 | EP1882979A2 Display panel, mask and method of manufacturing the same |
| 01/30/2008 | EP1882274A2 High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
| 01/30/2008 | EP1882273A2 High voltage silicon carbide mos-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same |
| 01/30/2008 | EP1882272A2 Semiconductor device and method of forming a semiconductor device |
| 01/30/2008 | CN101116187A Organic field-effect transistor and semiconductor device including the same |
| 01/30/2008 | CN101116175A Strained silicon, gate engineered fermi-fets |
| 01/30/2008 | CN101114678A Nano silicon heterojunction backward diode and method for making same |
| 01/30/2008 | CN101114677A Nonvolatile semiconductor memory device and method of manufacturing the same |