Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2008
03/13/2008US20080061387 Micro-actuator and locking switch
03/13/2008US20080061386 Semiconductor device including a gate electrode having a polymetal structure
03/13/2008US20080061385 Manufacturing method of a semiconductor device
03/13/2008US20080061384 Semiconductor Device
03/13/2008US20080061383 Semiconductor device having fin field effect transistor and manufacturing method thereof
03/13/2008US20080061382 Transistors, semiconductor integrated circuit interconnections and methods of forming the same
03/13/2008US20080061380 Method for manufacturing semiconductor device, and semiconductor device
03/13/2008US20080061379 MOS devices with graded spacers and graded source/drain regions
03/13/2008US20080061378 Semiconductor device
03/13/2008US20080061377 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
03/13/2008US20080061376 Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
03/13/2008US20080061375 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
03/13/2008US20080061374 Semiconductor resistor and semiconductor process of making the same
03/13/2008US20080061372 Semiconductor device
03/13/2008US20080061371 Field effect transistor (fet) devices and methods of manufacturing fet devices
03/13/2008US20080061368 High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
03/13/2008US20080061367 High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
03/13/2008US20080061366 Complementary metal-oxide-semiconductor device and fabricating method thereof
03/13/2008US20080061365 Trench fet with self aligned source and contact
03/13/2008US20080061364 Trench type MOS transistor and method for manufacturing the same
03/13/2008US20080061363 Integrated transistor device and corresponding manufacturing method
03/13/2008US20080061362 Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making
03/13/2008US20080061361 Non-volatile memory device and method of manufacturing the same
03/13/2008US20080061360 Non-volatile memory device and method of manufacturing the same
03/13/2008US20080061359 Dual charge storage node with undercut gate oxide for deep sub-micron memory cell
03/13/2008US20080061357 Semiconductor device with double barrier film
03/13/2008US20080061356 Eeprom device and methods of forming the same
03/13/2008US20080061355 Method of reducing memory cell size for floating gate NAND flash
03/13/2008US20080061354 Semiconductor device with split gate memory cell and fabrication method thereof
03/13/2008US20080061353 Flash Memory Device
03/13/2008US20080061352 Semiconductor device and method of manufacturing the same
03/13/2008US20080061351 Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device
03/13/2008US20080061350 Nonvolatile semiconductor memory and method of manufacturing the same and manufacturing method thereof
03/13/2008US20080061349 Nonvolatile semiconductor memory with resistance elements and method of manufacturing the same
03/13/2008US20080061348 Nonvolatile memory structure and method of forming the same
03/13/2008US20080061347 Configuration and method of manufacturing the one-time programmable (OTP) memory cells
03/13/2008US20080061346 One-transistor memory cell with bias gate
03/13/2008US20080061343 Metal-oxide-metal structure with improved capacitive coupling area
03/13/2008US20080061342 Semiconductor device and method for making the same
03/13/2008US20080061341 Memory Device Having Wide Area Phase Change Element and Small Electrode Contact Area
03/13/2008US20080061340 Memory cell array and method of forming the memory cell array
03/13/2008US20080061337 Integrated memory cell array
03/13/2008US20080061336 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
03/13/2008US20080061334 Semiconductor memory device and method for forming the same
03/13/2008US20080061332 Spin mosfet
03/13/2008US20080061331 Semiconductor device and manufacturing method thereof
03/13/2008US20080061327 Semiconductor device and its manufacturing method
03/13/2008US20080061326 Semiconductor device
03/13/2008US20080061325 Device and method of manufacture for a low noise junction field effect transistor
03/13/2008US20080061324 Semiconductor device
03/13/2008US20080061323 Examination apparatus for biological sample and chemical sample
03/13/2008US20080061322 Transistor, memory cell array and method of manufacturing a transistor
03/13/2008US20080061317 Patterned strained semiconductor substrate and device
03/13/2008US20080061316 Strained-channel fin field effect transistor (fet) with a uniform channel thickness and separate gates
03/13/2008US20080061303 Compound semiconductor device and method for manufacturing same
03/13/2008US20080061301 Method of manufacturing a semiconductor device
03/13/2008US20080061300 Flexible backplane and methods for its manufacture
03/13/2008US20080061299 Semiconductor device and a method for manufacturing the same
03/13/2008US20080061298 Semiconductor element and semiconductor memory device using the same
03/13/2008US20080061297 Substrates and methods for fabricating the same
03/13/2008US20080061296 Thin Film Transistor Array Panel for Liquid Crystal Display and Method of Manufacturing the Same
03/13/2008US20080061295 Tft-lcd array substrate and method for manufacturing the same
03/13/2008US20080061294 Thin-film transistor substrate, display device, cad program and transfer method for thin-film transistor substrate
03/13/2008US20080061293 Semiconductor Device with Heterojunctions and an Inter-Finger Structure
03/13/2008US20080061292 Method of Doping Impurities, and Electronic Element Using the Same
03/13/2008US20080061290 Organic fet having improved electrode interfaces and a fabrication method therefor
03/13/2008US20080061289 Reacting fluorescein with sodium chloride, sodium bromide or sodium iodide, and 2 KHSO5.KHSO4.K2SO4 at over 150 degrees C; solid phase synthesis; halogenation; 2',4',5'-trichlorofluorescein, 2',4',5',7'-tetrachlorofluorescein, 4',5'-diiodofluorescein diacetate and 2',4',5'-triiodofluorescein
03/13/2008US20080061287 High mobility, solubility, oxidation resistance; transistor; drain electrodes
03/13/2008US20080061286 Liquid metal contact as possible element for thermotunneling
03/13/2008US20080061285 Metal layer inducing strain in silicon
03/13/2008US20080061284 Nanowire MOSFET with doped epitaxial contacts for source and drain
03/13/2008US20080060381 Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device
03/13/2008DE19822523B4 Nichtflüchtige Halbleiter-Speicherzelle, nichtflüchtiges Halbleiterspeicher-Bauteil und Verfahren zum Herstellen eines nichtflüchtigen Halbleiterspeicher-Bauteils A non-volatile semiconductor memory cell, a non-volatile semiconductor memory device and method of manufacturing a nonvolatile semiconductor memory device as
03/13/2008DE112006001280T5 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
03/13/2008DE102007039440A1 Halbleiterbauelemente und Verfahren zu deren Herstellung Semiconductor devices and processes for their preparation
03/13/2008DE102007037897A1 Bildsensor und ein Verfahren zu dessen Herstellung Image sensor and a method for its preparation
03/13/2008DE102006040765A1 Feldeffekttransistor mit einer verspannten Kontaktätzstoppschicht mit gerigerer Konformität Field effect transistor having a strained contact etch with gerigerer conformity
03/13/2008DE102006040762A1 N-Kanalfeldeffekttransistor mit einer Kontaktätzstoppschicht in Verbindung mit einer Zwischenschichtdielektrikumsteilschicht mit der gleichen Art an innerer Verspannung N-channel field effect transistor with a contact etch stop in conjunction with a Zwischenschichtdielektrikumsteilschicht with the same kind of internal stress
03/13/2008DE102006025374B4 Sperrschicht-Feldeffekttransistor-Anordnung und Verfahren zum Ansteuern eines Sperrschicht-Feldeffekttransistors JFET-arrangement and method for driving a junction field effect transistor
03/13/2008DE102006006700B4 Halbleiterbauelement insbesondere Leistungshalbleiterbauelement mit Ladungsträgerrekombinationszonen und Verfahren zur Herstellung desselben Semiconductor component, in particular power semiconductor component with Ladungsträgerrekombinationszonen and method of manufacturing the same
03/12/2008EP1898460A1 Semiconductor device and fabrication method thereof
03/12/2008EP1898451A1 Electrode patterning layer comprising polyamic acid or polyimide and electronic device using the same
03/12/2008EP1897146A2 Light emitting diode package and method for making same
03/12/2008EP1897145A1 Nanostructures with negative differential resistance and method for making same
03/12/2008EP1897144A2 Quantum dot based optoelectronic device and method of making same
03/12/2008EP1897135A2 Capacitorless dram over localized soi
03/12/2008EP1897130A1 Transistor with improved tip profile and method of manufacture thereof
03/12/2008EP1897097A2 Buffer compositions
03/12/2008EP1684973A4 Vicinal gallium nitride substrate for high quality homoepitaxy
03/12/2008EP1614166A4 Fluidic nanotubes and devices
03/12/2008EP1609178A4 Gate electrode for mos transistors
03/12/2008EP1485940A4 Silicon carbide bipolar junction transistor with overgrown base region
03/12/2008EP1442476A4 Dielectric film
03/12/2008EP0879477B1 Electronic device manufacture by energy beam crystallisation
03/12/2008CN101142715A Semiconductor device and electronic device having the same
03/12/2008CN101142688A Non-planar mos structure with a strained channel region
03/12/2008CN101142687A Semiconductor device and process with improved perfomance
03/12/2008CN101142686A Method of fabricating a FET
03/12/2008CN101142685A Semiconductor device and its making method
03/12/2008CN101142684A Schottky device
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