Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2008
03/20/2008WO2008034026A1 Device and method of manufacture for a low noise junction field effect transistor
03/20/2008WO2008033982A2 Field effect transistor with raised source/drain fin straps
03/20/2008WO2008033855A2 Rfid tag assembly
03/20/2008WO2008032917A1 Crystallization method of amorphous silicon layer and manufacturing method of thin film transistor using the same
03/20/2008WO2008032873A1 Method for manufacturing semiconductor epitaxial crystal substrate
03/20/2008WO2008032720A1 Polymer compound and polymer light-emitting device
03/20/2008WO2008032715A1 Organic semiconductor material, organic semiconductor device using the same, and their production methods
03/20/2008WO2008032637A1 Organic transistor, and organic transistor manufacturing method
03/20/2008WO2008005216A3 Metal layer inducing strain in silicon
03/20/2008WO2007147102A3 High voltage ldmos
03/20/2008WO2007143073A3 Doped plug for ccd gaps
03/20/2008WO2007127044A3 Method of manufacturing a ccd with improved charge transfer
03/20/2008WO2007049052A3 Controlled preparation of nanoparticle materials
03/20/2008US20080072357 Reversible actuation in arrays of nanostructures
03/20/2008US20080070401 Memory device and method for manufacturing the same
03/20/2008US20080070397 Methods for Selective Placement of Dislocation Arrays
03/20/2008US20080070395 Semiconductor devices and methods with bilayer dielectrics
03/20/2008US20080070392 Controlling diffusion in doped semiconductor regions
03/20/2008US20080070390 Method and apparatus for semiconductor device and semiconductor memory device
03/20/2008US20080070386 Device for irradiating a laser beam
03/20/2008US20080070374 Method For Forming Trench Capacitor and Memory Cell
03/20/2008US20080070359 Semiconductor device including MOS field effect transistor having offset spacers of gate sidewall films on either side of gate electrode and method of manufacturing the same
03/20/2008US20080070358 Semiconductor device
03/20/2008US20080070352 Method of manufacturing a semiconductor device
03/20/2008US20080070336 Semiconductor layer formed by selective deposition and method for depositing semiconductor layer
03/20/2008US20080070335 Method of Fabricating A Semiconductor Device
03/20/2008US20080069734 Suspending an emissive small organic molecule or an emissive conjugated polymer in a compressed carbon diioxide solvent phase, depositing the suspension onto the desired layer of light emitting diode, evaporating the solvent; uses a cheap, environmentally friendly solvent
03/20/2008US20080069169 Spatial bandgap modifications and energy shift of semiconductor structures
03/20/2008US20080068895 Integrated Circuit Having a Drive Circuit
03/20/2008US20080068893 Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
03/20/2008US20080068882 Semiconductor device
03/20/2008US20080068868 Power MESFET Rectifier
03/20/2008US20080068526 Display device
03/20/2008US20080067637 Simultaneous bidirectional cable interface
03/20/2008US20080067634 Reduced footprint packaged microelectronic components and methods for manufacturing such microelectronic components
03/20/2008US20080067633 Semiconductor device and manufacturing method for the same
03/20/2008US20080067632 Em rectifying antenna suitable for use in conjunction with a natural breakdown device
03/20/2008US20080067629 Electrical Fuse Having Resistor Materials Of Different Thermal Stability
03/20/2008US20080067628 Techniques for providing decoupling capacitance
03/20/2008US20080067627 Fuse Structure and Method for Manufacturing Same
03/20/2008US20080067626 Method for fabricating a trench structure, and a semiconductor arrangement comprising a trench structure
03/20/2008US20080067625 Semiconductor device
03/20/2008US20080067623 Lateral silicided diodes
03/20/2008US20080067622 High density photodiodes
03/20/2008US20080067619 Stress sensor for in-situ measurement of package-induced stress in semiconductor devices
03/20/2008US20080067617 Semiconductor device and manufacturing method thereof
03/20/2008US20080067616 Semiconductor device
03/20/2008US20080067615 Semiconductor device and method for fabricating thereof
03/20/2008US20080067614 Metal oxide semiconductor transistor and method for manufacturing the same
03/20/2008US20080067613 Field effect transistor with raised source/drain fin straps
03/20/2008US20080067612 Semiconductor Device Including Nickel Alloy Silicide Layer Having Uniform Thickness and Method of Manufacturing the Same
03/20/2008US20080067611 Semiconductor device and manufacturing method thereof
03/20/2008US20080067610 Mask rom and fabricating method thereof
03/20/2008US20080067609 Semiconductor Device Including Field Effct Transistor and Method of Forming the Same
03/20/2008US20080067607 Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure
03/20/2008US20080067606 Semiconductor device having different metal gate structures
03/20/2008US20080067605 Single well excess current dissipation circuit
03/20/2008US20080067604 Field effect transistor arrangement, memory device and methods of forming the same
03/20/2008US20080067603 Thin film transistor array panel and method of manufacture
03/20/2008US20080067597 Method of manufacturing a semiconductor device
03/20/2008US20080067596 Method of Fabricating A Semiconductor Device
03/20/2008US20080067594 Insulated-gate field-effect thin film transistors
03/20/2008US20080067593 Semiconductor device
03/20/2008US20080067592 Wiring substrate and method of manufacturing thereof, and thin film transistor and method of manufacturing thereof
03/20/2008US20080067589 Transistor having reduced channel dopant fluctuation
03/20/2008US20080067588 High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
03/20/2008US20080067587 Method for producing an electronic component, method for producing a thyristor, method for producing a drain-extended MOS filed-effect transistor, electronic component, drain-extended MOS field-effect transistor, electronic component arrangement
03/20/2008US20080067586 High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
03/20/2008US20080067585 High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
03/20/2008US20080067584 Inverted-trench grounded-source FET structure with trenched source body short electrode
03/20/2008US20080067583 Nonvolatile semiconductor memory device and manufacturing method thereof
03/20/2008US20080067582 Semiconductor device and method of manufacturing the semiconductor device
03/20/2008US20080067581 Non-volatile memory device and method of manufacturing the same
03/20/2008US20080067580 Memory device and method of manufacturing the same
03/20/2008US20080067579 Flash memory device and method for manufacturing the same
03/20/2008US20080067578 Nonvolatile Memory Having Modified Channel Region Interface
03/20/2008US20080067577 Multi-trapping layer flash memory cell
03/20/2008US20080067576 Nonvolatile semiconductor memory and manufacturing method thereof
03/20/2008US20080067575 Semiconductor device and method of manufacturing the same
03/20/2008US20080067574 Semiconductor device and method for manufacturing the same
03/20/2008US20080067573 Stacked memory and method for forming the same
03/20/2008US20080067572 Array of Non-Volatile Memory Cells With Floating Gates Formed of Spacers in Substrate Trenches
03/20/2008US20080067571 Semiconductor memory device and method of manufacturing the same
03/20/2008US20080067568 Capacitor with hemispherical silicon-germanium grains and a method for making the same
03/20/2008US20080067566 ferroelectric memory device may include a substrate, an interlayer insulating layer on the semiconductor substrate, a contact plug penetrating the interlayer insulating layer, the contact plug being formed of a sequentially stacked metal plug and buffer plug, a conductive protection pattern covering
03/20/2008US20080067563 Semiconductor device
03/20/2008US20080067562 Semiconductor device and manufacturing method thereof
03/20/2008US20080067561 Quantum interference device
03/20/2008US20080067560 High Voltage Depletion Layer Field Effect Transistor
03/20/2008US20080067559 Heterogeneous integration of low noise amplifiers with power amplifiers or switches
03/20/2008US20080067558 Semiconductor device
03/20/2008US20080067557 MOS devices with partial stressor channel
03/20/2008US20080067554 NAND flash memory device with 3-dimensionally arranged memory cell transistors
03/20/2008US20080067553 Electromechanical memory array using nanotube ribbons and method for making same
03/20/2008US20080067549 Semiconductor component
03/20/2008US20080067548 III-Nitride power semiconductor device
03/20/2008US20080067547 Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs
03/20/2008US20080067546 Semiconductor device
03/20/2008US20080067545 Semiconductor device including field effect transistor and method of forming the same
03/20/2008US20080067544 Method for Producing a Strained Layer on a Substrate and Layered Structure
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