Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2008
06/19/2008US20080142881 Semiconductor device including a fin-channel recess-gate misfet
06/19/2008US20080142880 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
06/19/2008US20080142879 Integrated circuit system employing differential spacers
06/19/2008US20080142878 Charge trap memory device and a method of manufacturing the same
06/19/2008US20080142877 Nonvolatile semiconductor memory
06/19/2008US20080142876 Nonvolatile semiconductor storage device and manufacturing method of the same
06/19/2008US20080142875 Memory cells having split charge storage nodes and methods for fabricating memory cells having split charge storage nodes
06/19/2008US20080142874 Integrated circuit system with implant oxide
06/19/2008US20080142873 Integrated circuit system with metal and semi-conducting gate
06/19/2008US20080142872 Non-volatile memory devices including stepped source regions and methods of fabricating the same
06/19/2008US20080142871 Semiconductor device and method for manufacturing semiconductor device
06/19/2008US20080142870 Nonvolatile semiconductor memory
06/19/2008US20080142869 Non-volatile memory device and method of forming the same
06/19/2008US20080142868 Floating body memory and method of fabricating the same
06/19/2008US20080142867 Non-volatile memory device with polysilicon spacer and method of forming the same
06/19/2008US20080142866 Integrated Circuit Memory Devices and Capacitors Having Carbon Nanotube Electrodes
06/19/2008US20080142865 Semiconductor device and method for manufacturing the same
06/19/2008US20080142864 Semiconductor device and method for manufacturing the same
06/19/2008US20080142862 Method of fabricating a trench capacitor having increased capacitance
06/19/2008US20080142861 Symmetric capacitor structure
06/19/2008US20080142859 Microelectronics; thin films; nanodots; integrated circuits; semiconductors
06/19/2008US20080142855 Mos transistor, method for manufacturing the mos transistor, cmos semiconductor device including the mos transistor, and semiconductor device including the cmos semiconductor device
06/19/2008US20080142854 Circuit and Method for Suppressing Gate Induced Drain Leakage
06/19/2008US20080142853 Multi-channel transistor structure and method of making thereof
06/19/2008US20080142851 Charge transfer device and solid state imager device
06/19/2008US20080142850 Electrical resistance
06/19/2008US20080142849 Semiconductor ESD device and method of making same
06/19/2008US20080142847 Semiconductor apparatus having a large-size bus connection
06/19/2008US20080142846 Nitride semiconductor substrate and manufacturing method thereof
06/19/2008US20080142845 HEMT including MIS structure
06/19/2008US20080142844 Semiconductor heterostructure
06/19/2008US20080142843 NMOS device, PMOS device, and SiGe HBT device formed on soi substrate and method of fabricating the same
06/19/2008US20080142842 Relaxed silicon germanium substrate with low defect density
06/19/2008US20080142841 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
06/19/2008US20080142840 Metal gate transistors with epitaxial source and drain regions
06/19/2008US20080142839 Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
06/19/2008US20080142837 Vertical type semiconductor device and manufacturing method of the device
06/19/2008US20080142836 Method for growth of alloy layers with compositional curvature in a semiconductor device
06/19/2008US20080142835 Stress enhanced transistor and methods for its fabrication
06/19/2008US20080142834 Voltage-controlled bidirectional switch
06/19/2008US20080142811 MOSFET devices and methods of fabrication
06/19/2008US20080142808 Thin film transistor and fabrication method thereof
06/19/2008US20080142806 COMBINATION PLANAR FET AND finFET DEVICE
06/19/2008US20080142804 Liquid crystal display device including driving circuit and method of fabricating the same
06/19/2008US20080142803 Display device and manufacturing method thereof
06/19/2008US20080142802 Tft-lcd pixel unit and method for manufacturing the same
06/19/2008US20080142800 Method of manufacturing thin film transistor, thin film transistor, and display unit
06/19/2008US20080142797 Thin film transistor, thin film transistor substate, and method of manufacturing the same
06/19/2008US20080142796 ZnO diode and method of forming the same
06/19/2008US20080142795 Ga2o3 Semiconductor Device
06/19/2008US20080142792 Di-thieno-benzo-thieno-thiophene derivatives; heat treatment; improved solubility
06/19/2008US20080142787 Fermionic bell-state analyzer and quantum computer using same
06/19/2008US20080142786 Insulated gate for group iii-v devices
06/19/2008US20080142785 Strain-inducing semiconductor regions
06/19/2008US20080142784 Nanostructures and methods for manufacturing the same
06/19/2008US20080142781 Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof
06/19/2008US20080142780 Light-Emitting Diode Chip
06/19/2008DE10229625B4 Halbleitereinrichtung Semiconductor device
06/19/2008DE102006002439B4 Halbleitervorrichtung Semiconductor device
06/19/2008DE102005035732B4 Leistungs-Halbleitervorrichtung Power semiconductor device
06/19/2008DE102004011430B4 Halbleiterspeichereinrichtung A semiconductor memory device
06/19/2008DE10164666B4 Halbleiterbauelement zum Schutz vor elektrostatischer Entladung Semiconductor device for protection against electrostatic discharge
06/19/2008CA2672259A1 Method of manufacturing semiconductor device
06/18/2008EP1933386A1 Process for producing silicon carbide semiconductor device
06/18/2008EP1933385A2 Thin film transistor, thin film transistor substrate, and method of manufacturing the same
06/18/2008EP1933384A1 Semiconductor heterostructure
06/18/2008EP1933383A2 Silicon carbide diode voltage limiter
06/18/2008EP1933378A1 Nonvolatile semiconductor memory element having excellent charge retention properties and process for producing the same
06/18/2008EP1933373A2 Method for producing a device based on nanocrystals covered with a nitride layer applied by CVD
06/18/2008EP1933293A1 Tft substrate and method for manufacturing tft substrate
06/18/2008EP1932183A1 Transistor element, display device and these manufacturing methods
06/18/2008EP1932182A2 Semiconductor device with improved contact pad and method for fabrication thereof
06/18/2008EP1932181A2 N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
06/18/2008EP1932175A2 Die pad for semiconductor packages
06/18/2008EP1932172A1 Double gate non-volatile memory device and method of manufacturing
06/18/2008EP1932171A1 Finfet-based non-volatile memory device
06/18/2008EP1738410B1 Method for fabricating strained silicon-on-insulator structures and strained silicon-on -insulator structures formed thereby
06/18/2008EP1540725B1 Method of manufacture of a semi-conductor component with condensators buried in the substrate and insulated component layer thereof
06/18/2008CN101203960A Semiconductor device with relatively high breakdown voltage and manufacturing method
06/18/2008CN101203954A Semiconductor device and method for making the same
06/18/2008CN101203950A Organic semiconductor film forming method, organic semiconductor film and organic thin film transistor
06/18/2008CN101203949A Method for organic semiconductor material thin film formation and process for producing organic thin film transistor
06/18/2008CN101203947A Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate
06/18/2008CN101203946A Semiconductor device
06/18/2008CN101202314A ZnO diode and method of forming the same
06/18/2008CN101202313A Ultrafast recovery diode
06/18/2008CN101202312A Read-only memory and its manufacture method
06/18/2008CN101202311A Floating gate flash memory device structure and method for making floating gate
06/18/2008CN101202310A Floating gate flash memory device structure
06/18/2008CN101202309A Floating gate flash memory device
06/18/2008CN101202308A Floating gate flash memory device structure
06/18/2008CN101202307A Floating gate flash memory device and method for making floating gate
06/18/2008CN101202306A Thin film transistor substrate and its producing method
06/18/2008CN101202305A Semiconductor device with improved source and drain and method of manufacturing the same
06/18/2008CN101202304A HEMT including MIS structure
06/18/2008CN101202303A Lateral direction PNP device structure for high voltage technology
06/18/2008CN101202302A Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
06/18/2008CN101202301A Gate conductor structure and method of forming
06/18/2008CN101202300A Semiconductor device and method of manufacturing the same
06/18/2008CN101202286A Array substrate, display device, and method for manufacturing the array substrate
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