Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2008
06/26/2008US20080150038 Method of fabricating semiconductor device
06/26/2008US20080150037 Selective STI Stress Relaxation Through Ion Implantation
06/26/2008US20080150035 Semiconductor device and manufacturing method thereof
06/26/2008US20080150034 High Voltage CMOS Device and Method of Fabricating the Same
06/26/2008US20080150032 Semiconductor apparatus and manufacturing method thereof
06/26/2008US20080150031 Double gate fet and fabrication process
06/26/2008US20080150030 Semiconductor device and manufacturing method of the same
06/26/2008US20080150029 Memory system with fin fet technology
06/26/2008US20080150028 Zero interface polysilicon to polysilicon gate for semiconductor device
06/26/2008US20080150027 Semiconductor device and method of manufacturing the same
06/26/2008US20080150026 Metal-oxide-semiconductor field effect transistor with an asymmetric silicide
06/26/2008US20080150025 field-effect transistors; growing freestanding nano-, micro- and milli-scale semiconductor substrates used for active channels, and forming strands of active electronic devices along a wire; low mask count and roll-to-roll continuous processing
06/26/2008US20080150024 Semiconductor Device and Method of Manufacturing a Semiconductor Device
06/26/2008US20080150023 Semiconductor memory and manufacturing method thereof
06/26/2008US20080150022 Power transistor featuring a variable topology layout
06/26/2008US20080150021 Trench-Gate Transistors and Their Manufacture
06/26/2008US20080150020 Trenched Shield Gate Power Semiconductor Devices and Methods of Manufacture
06/26/2008US20080150019 Profiled gate field effect transistor with enhanced high harmonic gain
06/26/2008US20080150018 Semiconductor device
06/26/2008US20080150017 Semiconductor device
06/26/2008US20080150016 Semiconductor device and method for manufacturing the same
06/26/2008US20080150015 Transistor having recess channel and fabricating method thereof
06/26/2008US20080150014 Semiconductor Device and Method for Fabricating the Same
06/26/2008US20080150013 Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layer
06/26/2008US20080150010 Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same
06/26/2008US20080150009 Electron Blocking Layers for Electronic Devices
06/26/2008US20080150008 Non-volatile memory devices and methods of manufacturing the same
06/26/2008US20080150007 Variable salicide block for resistance equalization in an array
06/26/2008US20080150006 Using implanted poly-1 to improve charging protection in dual-poly process
06/26/2008US20080150005 Memory system with depletion gate
06/26/2008US20080150004 Electron Blocking Layers for Electronic Devices
06/26/2008US20080150003 Electron blocking layers for electronic devices
06/26/2008US20080150002 Simultaneous Formation of a Top Oxide Layer in a Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Transistor and a Gate Oxide in a Metal Oxide Semiconductor (MOS)
06/26/2008US20080150001 Memory device having implanted oxide to block electron drift, and method of manufacturing the same
06/26/2008US20080150000 Memory system with select gate erase
06/26/2008US20080149999 Semiconductor memory comprising dual charge storage nodes and methods for its fabrication
06/26/2008US20080149998 Flash memory devices and methods of fabricating the same
06/26/2008US20080149997 Nonvolatile memory device and method of operating the same
06/26/2008US20080149995 Nonvolatile memory device and methods of fabricating the same
06/26/2008US20080149994 Flash memory with recessed floating gate
06/26/2008US20080149993 Nonvolatile semiconductor memory
06/26/2008US20080149991 Non-volatile semiconductor storage device and method for manufacturing the same
06/26/2008US20080149990 Memory system with poly metal gate
06/26/2008US20080149989 Flash memory devices and methods for fabricating the same
06/26/2008US20080149988 Semiconductor memory devices and methods for fabricating the same
06/26/2008US20080149987 Gate structures for flash memory and methods of making same
06/26/2008US20080149986 Zero interface polysilicon to polysilicon gate for flash memory
06/26/2008US20080149985 Method for fabricating floating gates structures with reduced and more uniform forward tunneling voltages
06/26/2008US20080149983 Metal-oxide-semiconductor (mos) varactors and methods of forming mos varactors
06/26/2008US20080149981 Rf power transistor with large periphery metal-insulator-silicon shunt capacitor
06/26/2008US20080149977 Semiconductor device and method for manufacturing the same
06/26/2008US20080149972 Semiconductor device
06/26/2008US20080149971 Semiconductor device and method for fabricating the same
06/26/2008US20080149969 Semiconductor device and manufacturing method thereof
06/26/2008US20080149965 Transistor and method for fabricating the same
06/26/2008US20080149964 Semiconductor Devices
06/26/2008US20080149963 Trench Type Mosfet and Method of Fabricating the Same
06/26/2008US20080149951 Light emitting device
06/26/2008US20080149944 Light emitting diodes with a pn-junction giving an active region to produce light which is then directed by the nanowire acting as a waveguide; epitaxially growing nanowire on substrate, depositing a mask around the nanowire, then etching
06/26/2008US20080149941 Compound Semiconductor-On-Silicon Wafer with a Silicon Nanowire Buffer Layer
06/26/2008US20080149940 Nitride semiconductor device
06/26/2008US20080149939 Electronic cooling device and fabrication method thereof
06/26/2008US20080149937 Connection structure, electro-optical device, and method for production of electro-optical device
06/26/2008US20080149935 Thin film transistor substrate and fabricating method thereof
06/26/2008US20080149934 Printed component circuit with fluidic template
06/26/2008US20080149933 Display panel
06/26/2008US20080149931 Display device and manufacturing method thereof
06/26/2008US20080149930 Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thing film transistor substrate
06/26/2008US20080149929 Method of producing a semiconductor element and semiconductor element
06/26/2008US20080149928 Production Method of Semiconductor Device and Semiconductor Device
06/26/2008US20080149921 Electronic device and producing method therefor
06/26/2008US20080149920 Printing method for high performance electronic devices
06/26/2008US20080149919 Structure and Method For Realizing a Microelectronic Device Provided With a Number of Quantum Wires Capable of Forming One or More Transistor Channels
06/26/2008US20080149914 Nanoelectronic structure and method of producing such
06/26/2008US20080149733 Memory Element and Semiconductor Device
06/26/2008US20080149731 Id Label, Id Card, and Id Tag
06/26/2008US20080149029 Apparatus and method of crystallizing amorphous silicon
06/26/2008US20080148849 Motion sensor and method of manufacturing the same
06/26/2008DE112006002027T5 Verfahren zum Herstellen von Halbleitervorrichtungen und System zum Herstellen von Halbleitervorrichtungen A method for the manufacture of semiconductor devices and system for producing semiconductor devices
06/26/2008DE112005000747T5 Polymer-Dielektrika zur Speicherelement-Array-Verbindung Polymer dielectrics for memory element array connection
06/26/2008DE10335102B4 Verfahren zur Herstellung einer epitaxialen Schicht für erhöhte Drain- und Sourcegebiete durch Entfernen von Kontaminationsstoffen A process for producing an epitaxial layer for increased drain and source regions by removing contaminants
06/26/2008DE10297788B4 Deposition apparatus for manufacturing semiconductor device, e.g. Schottky barrier metal oxide semiconductor field effect transistor, comprises first and second chambers, pumping portions, gas injecting portions, and connecting portion
06/26/2008DE102007061031A1 Isolierte Mehrfachgate-FET-Schaltungsblöcke mit verschiedenen Massepotenzialen Isolated multi-gate FET circuit blocks with different ground potentials
06/26/2008DE102007058676A1 Rauschreduzierung in Halbleitereinrichtungen Noise reduction in semiconductor devices
06/26/2008DE102007058455A1 Verfahren zum Herstellen eines Halbleiter-Elements und Halbleiter-Element A method of manufacturing a semiconductor element and semiconductor element
06/26/2008DE102006062647A1 Semiconductor element has one group III nitride layer section, which divides p conducting group III nitride layer sections of group III nitride layer, producing interface of indexing
06/26/2008DE102006060484A1 Halbleiterbauelement mit einem Halbleiterchip und Verfahren zur Herstellung desselben Of the same semiconductor device with a semiconductor chip and method for producing
06/26/2008DE102006060342A1 CMOS-Transistor CMOS transistor
06/26/2008DE102004026149B4 Verfahren zum Erzeugen eines Halbleiterbauelements mit Transistorelementen mit spannungsinduzierenden Ätzstoppschichten A method for producing a semiconductor device having transistor elements with stress inducing etch stop layers
06/26/2008CA2673227A1 Lateral junction field-effect transistor
06/25/2008EP1936697A2 A field effect transistor device, and methods of production thereof
06/25/2008EP1936696A1 A field effect transistor device and methods of production thereof
06/25/2008EP1936695A1 Silicon carbide semiconductor device
06/25/2008EP1936690A2 Semiconductor device
06/25/2008EP1936672A1 Electron blocking layers for gate stacks of nonvolatile memory devices
06/25/2008EP1936390A1 Semiconductor device for measuring ultra small electrical currents and small voltages
06/25/2008EP1935028A2 Semiconductor device and method of manufacturing the same
06/25/2008EP1935027A1 Semiconductor device and manufacturing method thereof
06/25/2008EP1935026A1 Insulated gate field-effet transistor having a dummy gate
06/25/2008EP1935025A2 Gallium nitride high electron mobility transistor structure
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