Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2008
06/24/2008US7391079 Metal oxide semiconductor device
06/24/2008US7391078 Non-volatile memory and manufacturing and operating method thereof
06/24/2008US7391077 Vertical type semiconductor device
06/24/2008US7391076 Non-volatile memory cells
06/24/2008US7391075 Non-volatile semiconductor memory device with alternative metal gate material
06/24/2008US7391074 Nanowire based non-volatile floating-gate memory
06/24/2008US7391073 Non-volatile memory structure and method of fabricating non-volatile memory
06/24/2008US7391072 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
06/24/2008US7391071 Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the same
06/24/2008US7391070 Semiconductor structures and memory device constructions
06/24/2008US7391069 Semiconductor device and manufacturing method thereof
06/24/2008US7391068 Semiconductor device
06/24/2008US7391067 Hybrid microwave integrated circuit
06/24/2008US7391064 Memory device with a selection element and a control line in a substantially similar layer
06/24/2008US7391063 Display device
06/24/2008US7391062 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication
06/24/2008US7391058 Semiconductor devices and methods of making same
06/24/2008US7391056 Chemical sensor using chemically induced electron-hole production at a Schottky barrier
06/24/2008US7391055 Capacitor, semiconductor device and manufacturing method thereof
06/24/2008US7391054 Semiconductor device and manufacturing method thereof
06/24/2008US7391053 Inspection substrate for display device
06/24/2008US7391052 TFT structure for suppressing parasitic MOSFET in active display
06/24/2008US7391050 Phase change memory device with thermal insulating layers
06/24/2008US7391049 Thin-film transistor, thin-film transistor sheet and their manufacturing method
06/24/2008US7391047 System for forming a strained layer of semiconductor material
06/24/2008US7391046 Light source module and vehicle front lamp
06/24/2008US7391045 Three-dimensional phase-change memory
06/24/2008US7391005 Direct attach optical receiver module and method of testing
06/24/2008US7390947 Forming field effect transistors from conductors
06/24/2008US7390734 Thin film transistor substrate and manufacturing method thereof
06/24/2008US7390731 Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
06/24/2008US7390728 Display device and manufacturing method thereof
06/24/2008US7390727 Polycrystalline silicon film containing Ni
06/24/2008US7390721 Methods of base formation in a BiCMOS process
06/24/2008US7390717 Trench power MOSFET fabrication using inside/outside spacers
06/24/2008US7390701 Method of forming a digitalized semiconductor structure
06/24/2008US7390698 Packaged semiconductor device and method of manufacture using shaped die
06/24/2008US7390696 Wafer, semiconductor device, and fabrication methods therefor
06/24/2008US7390690 Imager light shield
06/24/2008US7390680 Method to selectively identify reliability risk die based on characteristics of local regions on the wafer
06/24/2008US7390581 used for coating epitaxial films in the fabrication of electronic and opto-electronic devices such as laser diodes, light emitting diodes, transistors and detectors
06/24/2008US7390568 Semiconductor nanocrystal heterostructures having specific charge carrier confinement
06/24/2008US7390527 Method for manufacturing a nanostructure at a predetermined point on supporting carrier
06/24/2008US7389691 Acceleration sensor
06/19/2008WO2008073753A2 Memory device protection layer
06/19/2008WO2008073384A1 Non-polar and semi-polar light emitting devices
06/19/2008WO2008073115A1 Conductive shielding device
06/19/2008WO2008072692A1 Nonvolatile storage device and method for manufacturing the same
06/19/2008WO2008072573A1 Semiconductor device manufacturing method and semiconductor device
06/19/2008WO2008072482A1 Semiconductor device manufacturing method
06/19/2008WO2008072479A1 Nanowire, device comprising nanowire, and their production methods
06/19/2008WO2008072421A1 Magnetoresistance effect element and mram
06/19/2008WO2008072164A1 Transistor device and method of manufacturing such a transistor device
06/19/2008WO2008055088A3 Methods and devices for providing an amplitude estimate of a time varying signal
06/19/2008WO2008042843A3 Tapered voltage polysilicon diode electrostatic discharge circuit for power mosfets and ics
06/19/2008WO2008042351A3 Led system and method
06/19/2008WO2008022074A3 Semiconductor devices with sealed, unlined trenches and methods of forming same
06/19/2008WO2008005856A3 Spin injection device having semicondcutor-ferromagnetic-semiconductor structure and spin transistor
06/19/2008WO2008005614A3 Chip module for complete power train
06/19/2008WO2007146979A3 Circuit configurations having four terminal jfet devices
06/19/2008WO2007106428A3 Gaas power transistor
06/19/2008WO2007081573A3 Vertical dmos device in integrated circuit
06/19/2008WO2006134553A3 Semiconductor device having a polysilicon electrode
06/19/2008US20080145989 SEMICONDUCTOR DEVICE HAVING PARTIALLY INSULATED FIELD EFFECT TRANSISTOR (PiFET) AND METHOD OF FABRICATING THE SAME
06/19/2008US20080145985 Embedded semiconductor memory devices and methods for fabricating the same
06/19/2008US20080145983 Semiconductor device and process for fabricating the same
06/19/2008US20080145962 Nitride light emitting device and manufacturing method thereof
06/19/2008US20080144394 Nonvolatile semiconductor memory having suitable crystal orientation
06/19/2008US20080144377 Nonvolatile Semiconductor Storage Unit and Production Method Therefor
06/19/2008US20080144374 Nonvolatile Memory
06/19/2008US20080144355 Dielectric Antifuse for Electro-Thermally Programmable Device
06/19/2008US20080144352 Ferroelectric memory device and method of manufacturing the same
06/19/2008US20080143938 Liquid crystal display apparatus
06/19/2008US20080143904 Display substrate, method of manufacturing the same and display device having the same
06/19/2008US20080143903 Liquid crystal display device
06/19/2008US20080143012 Novel Polymer Films and Textile Laminates Containing Such Polymer Films
06/19/2008US20080142931 Method of Impurity Introduction, Impurity Introduction Apparatus and Semiconductor Device Produced with Use of the Method
06/19/2008US20080142926 Directionally controlled growth of nanowhiskers
06/19/2008US20080142925 Programmable-resistance memory cell
06/19/2008US20080142923 Semiconductor structure and method of manufacture
06/19/2008US20080142920 Highly sensitive photo-sensing element and photo-sensing device using the same
06/19/2008US20080142915 Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device
06/19/2008US20080142914 Proof-mass with supporting structure on integrated circuit-MEMS platform and method of fabricating the same
06/19/2008US20080142910 Semiconductor device
06/19/2008US20080142909 Ultra dense trench-gated power device with reduced drain source feedback capacitance and miller charge
06/19/2008US20080142908 Method of using iii-v semiconductor material as gate electrode
06/19/2008US20080142903 Semiconductor device and method for manufacturing the same
06/19/2008US20080142902 Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof
06/19/2008US20080142901 Manufacturing method of semiconductor device
06/19/2008US20080142900 Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit
06/19/2008US20080142899 Radiation immunity of integrated circuits using backside die contact and electrically conductive layers
06/19/2008US20080142894 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
06/19/2008US20080142892 Interconnect feature having one or more openings therein and method of manufacture therefor
06/19/2008US20080142891 BULK finFET DEVICE
06/19/2008US20080142890 Multiple-gate MOSFET device with lithography independnet silicon body thickness and methods for fabricating the same
06/19/2008US20080142889 Strapping contact for charge protection
06/19/2008US20080142887 Silicon nitride film and semiconductor device, and manufacturing method thereof
06/19/2008US20080142885 Semiconductor device with improved source and drain and method of manufacturing the same
06/19/2008US20080142884 Semiconductor device
06/19/2008US20080142882 Transistors