| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/29/2008 | US20080121981 Memory system with protection layer to cover the memory gate stack and methods for forming same |
| 05/29/2008 | US20080121980 Bottom Dielectric Structures and High-K Memory Structures in Memory Devices and Methods for Expanding a Second Bit Operation Window |
| 05/29/2008 | US20080121979 Nonvolatile semiconductor memory device and method for manufacturing the same |
| 05/29/2008 | US20080121978 Nonvolatile memory element |
| 05/29/2008 | US20080121977 Semiconductor device and method of manufacturing having the same |
| 05/29/2008 | US20080121976 Non-volatile memory cell devices and methods |
| 05/29/2008 | US20080121975 Split-gate memory cells and fabrication methods thereof |
| 05/29/2008 | US20080121974 Self-aligned split gate memory cell and method of making |
| 05/29/2008 | US20080121973 Fully logic process compatible non-volatile memory cell with a high coupling ratio and process of making the same |
| 05/29/2008 | US20080121972 Semiconductor device and method of manufacturing the same |
| 05/29/2008 | US20080121971 Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate |
| 05/29/2008 | US20080121970 Finned memory cells and the fabrication thereof |
| 05/29/2008 | US20080121969 Non-volatile memory cell device and methods |
| 05/29/2008 | US20080121968 Sensing memory device |
| 05/29/2008 | US20080121967 Nanocrystal non-volatile memory cell and method therefor |
| 05/29/2008 | US20080121966 Nanocrystal non-volatile memory cell and method therefor |
| 05/29/2008 | US20080121961 Transistor and memory cell array |
| 05/29/2008 | US20080121960 Semiconductor device and method of forming the same |
| 05/29/2008 | US20080121959 Semiconductor device and semiconductor product |
| 05/29/2008 | US20080121958 Semiconductor device and manufacturing method of the same |
| 05/29/2008 | US20080121954 Ferroelectric storage device and method of fabricating the same |
| 05/29/2008 | US20080121950 Semiconductor device |
| 05/29/2008 | US20080121947 Solar-powered MEMS acoustic sensor and system for providing physical security in a geographical area with use thereof |
| 05/29/2008 | US20080121946 Method of forming sensor for detecting gases and biochemical materials, integrated circuit having the sensor, and method of manufacturing the integrated circuit |
| 05/29/2008 | US20080121945 Magnetic switching element and a magnetic memory |
| 05/29/2008 | US20080121938 Nitride semiconductor based bipolar transistor and the method of manufacture thereof |
| 05/29/2008 | US20080121937 Heterojunction bipolar transistor with monocrystalline base and related methods |
| 05/29/2008 | US20080121936 Self-alignment scheme for a heterojunction bipolar transistor |
| 05/29/2008 | US20080121935 Compound semiconductor device and method for fabricating the same |
| 05/29/2008 | US20080121934 Semiconductor device having schottky junction and method for manufacturing the same |
| 05/29/2008 | US20080121933 Method of manufacturing a semiconductor device and products made thereby |
| 05/29/2008 | US20080121932 Active regions with compatible dielectric layers |
| 05/29/2008 | US20080121931 Semiconductor structure and method of making same |
| 05/29/2008 | US20080121930 Monocrystalline extrinsic base and emitter heterojunction bipolar transistor and related methods |
| 05/29/2008 | US20080121929 Silicide formation on SiGe |
| 05/29/2008 | US20080121927 Group III nitride semiconductor devices and methods of making |
| 05/29/2008 | US20080121925 Low voltage triggered silicon controlled rectifier |
| 05/29/2008 | US20080121922 Light emitting diode package with large viewing angle |
| 05/29/2008 | US20080121910 Semiconductor Devices Having Low Threading Dislocations and Improved Light Extraction and Methods of Making the Same |
| 05/29/2008 | US20080121897 Boron aluminum nitride diamond heterostructure |
| 05/29/2008 | US20080121896 Nitride semiconductor material, semiconductor element, and Manufacturing method thereof |
| 05/29/2008 | US20080121895 Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
| 05/29/2008 | US20080121894 Method of manufacturing display device |
| 05/29/2008 | US20080121893 Display panel |
| 05/29/2008 | US20080121892 Low temperature poly silicon liquid crystal display |
| 05/29/2008 | US20080121891 Method of measuring degree of crystallinity of polycrystalline silicon substrate, method of fabricating organic light emitting display using the same, and organic light emitting display fabricated using the same |
| 05/29/2008 | US20080121890 Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same |
| 05/29/2008 | US20080121889 Semiconductor device, method for manufacturing semiconductor device, and electro-optical apparatus |
| 05/29/2008 | US20080121888 Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same |
| 05/29/2008 | US20080121887 Non-volatile memory device and fabrication method thereof and memory apparatus including thereof |
| 05/29/2008 | US20080121885 Thin Film Transistor Array Panel of Active Liquid Crystal Display and Fabrication Method Thereof |
| 05/29/2008 | US20080121884 Patterned-Print Thin-Film Transistors with Top Gate Geometry |
| 05/29/2008 | US20080121883 Semiconductor device and manufacturing method thereof |
| 05/29/2008 | US20080121882 Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby |
| 05/29/2008 | US20080121878 Interposer, semiconductor chip mounted sub-board, and semiconductor package |
| 05/29/2008 | US20080121877 Thin film transistor with enhanced stability |
| 05/29/2008 | US20080121869 Organic thin film transistor with dual layer electrodes |
| 05/29/2008 | US20080121868 Schottky barrier tunnel transistor and method for fabricating the same |
| 05/29/2008 | US20080121860 Semiconductor memory cell and method of forming same |
| 05/29/2008 | US20080121819 Substrate with Marker, Manufacturing Method Thereof, Laser Irradiation Apparatus, Laser Irradiation Method, Light Exposure Apparatus, and Manufacturing Method of Semiconductor Device |
| 05/29/2008 | DE112005000529T5 Verbindungshalbleiter-Vorrichtung, Herstellungsverfahren der Verbindungshalbleiter-Vorrichtung und Diode A compound semiconductor device production method of the compound semiconductor device, and diode |
| 05/29/2008 | DE112004000745B4 Aufbau und Verfahren zum Bilden eines Feldeffekttransistors mit gekerbtem Gate Construction and method of forming a field effect transistor notched gate |
| 05/29/2008 | DE10351030B4 Speicherzelle, DRAM und Verfahren zur Herstellung einer Transistorstruktur in einem Halbleitersubstrat Memory cell, DRAM and methods of making a transistor structure in a semiconductor substrate, |
| 05/29/2008 | DE102007056970A1 Halbleiterelemente mit geringen TDs (Threading Dislocations) und verbesserter Lichtextraktion sowie Verfahren zum Herstellen derselben Semiconductor elements with low TDs (threading dislocations) and improved light extraction and method of making same |
| 05/29/2008 | DE102007054058A1 MuGFET mit erhöhter Wärmemasse MuGFET with increased thermal mass |
| 05/29/2008 | DE102006057064A1 Application process for epitactic Group III nitride layer involves depositing Group III nitride layer on reconstructed surface of semiconductor |
| 05/29/2008 | DE102006055151A1 Semiconductor component e.g. power diode, has semiconductor substrate, and semiconductor region i.e. buried semiconductor region, of one conductor type, which extends from one semiconductor area to another semiconductor area |
| 05/29/2008 | DE102006049155B3 Transistor und Speicherzellenfeld und Verfahren zu deren Herstellung Transistor and memory cell array and methods for their preparation |
| 05/29/2008 | DE102004063523B4 Halbleitervorrichtung Semiconductor device |
| 05/29/2008 | DE102004005666B4 Hochfrequenzanordnung, Verfahren zur Herstellung einer Hochfrequenzanordnung und Verwendung der Hochfrequenzanordnung A radio frequency device, method for manufacturing a high frequency assembly and use of the high-frequency arrangement |
| 05/29/2008 | DE10104274C5 Halbleiterbauteil mit MOS-Gatesteuerung und mit einer Kontaktstruktur sowie Verfahren zu seiner Herstellung A semiconductor device comprising MOS gated and with a contact structure and method for its preparation |
| 05/29/2008 | CA2667742A1 Monolithic ic and mems microfabrication process |
| 05/29/2008 | CA2642299A1 Optoelectronic devices utilizing materials having enhanced electronic transitions |
| 05/29/2008 | CA2612033A1 Organic thin film transistor with dual layer electrodes |
| 05/28/2008 | EP1926147A2 Method of manufacturing a semiconductor device and products made thereby |
| 05/28/2008 | EP1926131A1 Laser annealing method and device |
| 05/28/2008 | EP1925974A2 Fabrication of a wiring pattern and of an active matrix substrate |
| 05/28/2008 | EP1925034A1 Field-effect transistor having a channel comprising an oxide semiconductor material including indium and zinc |
| 05/28/2008 | EP1535319A4 Atomic layer deposition of high k metal oxides |
| 05/28/2008 | EP1360725A4 Non-uniform power semiconductor and method for making |
| 05/28/2008 | EP1030374B1 Semiconductor device and method for driving the same |
| 05/28/2008 | CN201066692Y P channel high-power semiconductor constant current diode |
| 05/28/2008 | CN201066691Y N channel high-power semiconductor constant current diode |
| 05/28/2008 | CN101189730A Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
| 05/28/2008 | CN101189729A One time programmable ROM |
| 05/28/2008 | CN101189728A Method and device with improved base access resistance for NPN bipolar transistor |
| 05/28/2008 | CN101189727A Semiconductor device including a superlattice with regions defining a semiconductor junction |
| 05/28/2008 | CN101189716A Semiconductor device and its making method |
| 05/28/2008 | CN101189710A Superjunction device having oxide lined trenches and method for manufacturing a superjunction device having oxide lined trenches |
| 05/28/2008 | CN101188266A Nitride semiconductor device |
| 05/28/2008 | CN101188251A Memory unit and its device and making method |
| 05/28/2008 | CN101188250A Semiconductor device including field effct transistor and method of forming the same |
| 05/28/2008 | CN101188249A MOSFET with vertical laminated leakage pole structure and its making method |
| 05/28/2008 | CN101188248A CMOS structure and its making method |
| 05/28/2008 | CN101188243A 薄膜晶体管面板及其制造方法 The thin film transistor panel and manufacturing method |
| 05/28/2008 | CN101188216A Silicon on insulator device with improved heat removal and method of manufacture |
| 05/28/2008 | CN101188201A Method of manufacturing a semiconductor device and products made thereby |
| 05/28/2008 | CN101188200A Method for manufacturing a semiconductor device |
| 05/28/2008 | CN101188190A SOQ substrate and method of manufacturing SOQ substrate |
| 05/28/2008 | CN101187767A 显示面板 Display panel |