Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2008
06/05/2008US20080130359 Multiple use memory chip
06/05/2008US20080129914 Light sensitive display
06/05/2008US20080129913 Light sensitive display
06/05/2008US20080129910 Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus
06/05/2008US20080129909 Light sensitive display
06/05/2008US20080129196 Light-emitting device having a planarized color filter
06/05/2008US20080128864 Semiconductor chip and method of producing the same
06/05/2008US20080128863 Fabrication method of semiconductor device and semiconductor device
06/05/2008US20080128862 Semiconductor Devices And Method Of Manufacturing Them
06/05/2008US20080128861 METHODS TO IMPROVE THE SiGe HETEROJUNCTION BIPOLAR DEVICE PERFORMANCE
06/05/2008US20080128860 Monolithic electronic component
06/05/2008US20080128859 Capacitor structure for integrated circuit
06/05/2008US20080128858 Semiconductor device and manufacturing method thereof
06/05/2008US20080128857 Multi-Finger Capacitor
06/05/2008US20080128856 Semiconductor device having metal-insulator-metal capacitor and method of fabricating the same
06/05/2008US20080128855 semiconductor integrated circuit device and a method of manufacturing the same
06/05/2008US20080128854 Embedded array capacitor with top and bottom exterior surface metallization
06/05/2008US20080128853 Non-Volatile Memory Devices with Discrete Resistive Memory Material Regions and Methods of Fabricating the Same
06/05/2008US20080128852 Semiconductor apparatus and method of producing the same
06/05/2008US20080128851 Method Of Manufacturing Soi Wafer And Thus-Manufactured Soi Wafer
06/05/2008US20080128850 Semiconductor Device And Method For Manufacturing Same
06/05/2008US20080128841 Semiconductor device carrying micro electro mechanical system
06/05/2008US20080128840 Method For Mounting Semiconductor Chips, and Corresponding Semiconductor Chip System
06/05/2008US20080128839 Electronic Apparatus Applied Anodic Bonding
06/05/2008US20080128837 Nickel Alloy Silicide Including Indium and a Method of Manufacture Therefor
06/05/2008US20080128836 Semiconductor device and method of fabricating the same
06/05/2008US20080128835 Semiconductor Device Having a Random Grained Polysilicon Layer and a Method for its Manufacture
06/05/2008US20080128834 Hot carrier degradation reduction using ion implantation of silicon nitride layer
06/05/2008US20080128833 High-dielectric-constant film ofhafnium, and deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature
06/05/2008US20080128832 P-type mos transistor, method of forming the same and method of optimizing threshold voltage thereof
06/05/2008US20080128826 Semiconductor integrated circuit and fabrication method for the same
06/05/2008US20080128821 Semiconductor Device Manufactured Using Passivation of Crystal Domain Interfaces in Hybrid Orientation Technology
06/05/2008US20080128820 Applying epitaxial silicon in disposable spacer flow
06/05/2008US20080128819 Lateral mos transistor and method for manufacturing thereof
06/05/2008US20080128815 Self-aligned nanometer-level transistor defined without lithography
06/05/2008US20080128814 Semiconductor device
06/05/2008US20080128811 Semiconductor devices with buried isolation regions
06/05/2008US20080128810 Semiconductor device
06/05/2008US20080128809 Semiconductor Device and Method of Manufacturing Same
06/05/2008US20080128808 Semiconductor Device and Manufacturing Method Thereof
06/05/2008US20080128806 Low defect si:c layer with retrograde carbon profile
06/05/2008US20080128805 Semiconductor device with block layer and method of manufacturing the same
06/05/2008US20080128803 Electronic device with connecting structure
06/05/2008US20080128802 Single transistor floating body dram cell having recess channel transistor structure
06/05/2008US20080128801 Semiconductor device
06/05/2008US20080128800 Field effect transistors including recessed forked gate structures and methods of fabricating the same
06/05/2008US20080128799 Semiconductor device with bulb type recess gate and method for fabricating the same
06/05/2008US20080128798 Semiconductor component with improved robustness
06/05/2008US20080128797 Structure and method for multiple height finfet devices
06/05/2008US20080128796 Triple gate and double gate finfets with different vertical dimension fins
06/05/2008US20080128795 Semiconductor device and method of fabricating the same
06/05/2008US20080128794 Non-Volatile Memory Including Insulated Gate Bipolar Transistors And Charge Trapping Layer Containing Silicon and Nitrogen
06/05/2008US20080128793 Non-volatile memory and non-volatile memory cell having asymmetrical doped structure
06/05/2008US20080128792 Non-volatile memory devices including divided charge storage structures
06/05/2008US20080128790 Memory device
06/05/2008US20080128789 Semiconductor memory device and method of manufacturing the same
06/05/2008US20080128788 Flash memory device including multilayer tunnel insulator and method of fabricating the same
06/05/2008US20080128786 High density semiconductor memory device and method for manufacturing the same
06/05/2008US20080128785 Flash memory device and method of manufacturing the same
06/05/2008US20080128784 Flash memory device
06/05/2008US20080128783 Split-gate non-volatile memory cells including raised oxide layers on field oxide regions
06/05/2008US20080128782 Double-doped polysilicon floating gate
06/05/2008US20080128781 Isolation trenches for memory devices
06/05/2008US20080128780 Non-volatile semiconductor storage device
06/05/2008US20080128779 Semiconductor device and method of manufacturing same
06/05/2008US20080128778 Method Of Manufacturing A Flash Memory Device
06/05/2008US20080128777 Two-step self-aligned source etch wtih large process window
06/05/2008US20080128776 Non-volatile rom and method of fabricating the same
06/05/2008US20080128775 Semiconductor device and method of manufacturing the same
06/05/2008US20080128774 Forming silicon trench isolation (STI) in semiconductor devices self-aligned to diffusion
06/05/2008US20080128772 In-Situ Formation of Metal Insulator Metal Capacitors
06/05/2008US20080128771 Nano-fuse structural arrangements having blow protection barrier spaced from and surrounding fuse link
06/05/2008US20080128766 Mosfet structure with ultra-low k spacer
06/05/2008US20080128765 MOSFET Device With Localized Stressor
06/05/2008US20080128764 Semiconductor substrate including a plurality of insulating regions, semiconductor device having the same, and method of manufacturing the device
06/05/2008US20080128763 Transistor, method of manufacturing same, etchant for use during manufacture of same, and system containing same
06/05/2008US20080128762 Junction isolated poly-silicon gate JFET
06/05/2008US20080128761 Elongated structure element with second material on its end portions that differs from the first material in electrical conductivity, chemical reactivity, composition
06/05/2008US20080128760 Schottky barrier nanowire field effect transistor and method for fabricating the same
06/05/2008US20080128758 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
06/05/2008US20080128757 Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same
06/05/2008US20080128754 SiGe SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
06/05/2008US20080128753 Transistors and method for making ohmic contact to transistors
06/05/2008US20080128752 GaN based HEMTs with buried field plates
06/05/2008US20080128751 Methods for forming iii-v semiconductor device structures
06/05/2008US20080128750 Method and system for providing a metal oxide semiconductor device having a drift enhanced channel
06/05/2008US20080128749 Method and system for providing a drift coupled device
06/05/2008US20080128748 Semiconductor device and method of manufacturing the same
06/05/2008US20080128747 STRUCTURE AND METHOD FOR A HIGH-SPEED SEMICONDUCTOR DEVICE HAVING A Ge CHANNEL LAYER
06/05/2008US20080128744 Integrated latch-up free insulated gate bipolar transistor
06/05/2008US20080128743 High-Voltage Device Structure
06/05/2008US20080128742 Telecommunications switch array with thyristor addressing
06/05/2008US20080128712 Raised sti structure and superdamascene technique for nmosfet performance enhancement with embedded silicon carbon
06/05/2008US20080128711 Silicon carbide semiconductor device
06/05/2008US20080128710 Producing SiC Packs on a Wafer Plane
06/05/2008US20080128709 Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects
06/05/2008US20080128708 GaN single crystal substrate and method for processing surface of GaN single crystal substrate
06/05/2008US20080128707 Semiconductor device and method for fabricating the same
06/05/2008US20080128706 Semiconductor device and method of its manufacture
06/05/2008US20080128705 Semiconductor device and electro-optical device
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