Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2008
06/03/2008US7382001 Enhancement mode III-nitride FET
06/03/2008US7381999 Workfunction-adjusted thyristor-based memory device
06/03/2008US7381998 Semiconductor integrated circuit device
06/03/2008US7381993 High-breakdown-voltage insulated gate semiconductor device
06/03/2008US7381992 Silicon carbide power devices with self-aligned source and well regions
06/03/2008US7381991 Semiconductor device and method of fabricating the same
06/03/2008US7381990 Thin film transistor with multiple gates fabricated using super grain silicon crystallization
06/03/2008US7381989 Semiconductor device including upper and lower transistors and interconnection between upper and lower transistors
06/03/2008US7381988 Array substrate for liquid crystal display device and the fabrication method of the same
06/03/2008US7381987 Driving circuit for display device
06/03/2008US7381985 Bis-carbazole monomers and polymers
06/03/2008US7381983 N-type carbon nanotube field effect transistor and method of fabricating the same
06/03/2008US7381981 Phase-change TaN resistor based triple-state/multi-state read only memory
06/03/2008US7381850 Multifunctional unsymmetrically substituted monomers and polyarylene compositions therefrom
06/03/2008US7381663 Method of fabricating a surface shape recognition sensor
06/03/2008US7381621 Methods of fabricating high voltage MOSFET having doped buried layer
06/03/2008US7381603 Semiconductor structure with improved on resistance and breakdown voltage performance
06/03/2008US7381601 Methods of fabricating field effect transistors having multiple stacked channels
06/03/2008US7381599 Semiconductor device and method for manufacturing the same
06/03/2008US7381598 Insulated gate semiconductor device and process for fabricating the same
06/03/2008US7381595 High-density plasma oxidation for enhanced gate oxide performance
06/03/2008US7381579 Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet
06/03/2008US7381573 Self-aligned, low-resistance, efficient memory array
06/03/2008US7381480 Magnetic recording element and magnetic recording device using the same
06/03/2008US7381285 Manufacturing method of a device
06/03/2008CA2321118C Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby
05/2008
05/29/2008WO2008064227A2 Dual stress device and method
05/29/2008WO2008064135A1 Monolithic ic and mems microfabrication process
05/29/2008WO2008064106A1 Method of making eeprom transistors
05/29/2008WO2008064042A2 Non-volatile memory transistor with quantum well charge trap
05/29/2008WO2008063824A1 Sb-based cmos devices
05/29/2008WO2008063658A2 Semiconductor nanocrystals and compositions and devices including same
05/29/2008WO2008062956A1 Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit
05/29/2008WO2008062893A1 Thin-film transistor, thin-film transistor manufacturing method, and display
05/29/2008WO2008062843A1 Electrode coating material, electrode structure and semiconductor device
05/29/2008WO2008062841A1 Organic thin film transistor and organic thin film light-emitting transistor
05/29/2008WO2008062800A1 Semiconductor device and its drive method
05/29/2008WO2008062720A1 Method for manufacturing thin film transistor which uses an oxide semiconductor
05/29/2008WO2008062715A1 Organic thin film transistor and organic thin film light-emitting transistor
05/29/2008WO2008062642A1 Semiconductor device and method for fabricating the same
05/29/2008WO2008042165A3 Transistor surround gate structure with partial silicon-on-insulator for memory cells, memory arrays, memory devices and systems and methods of forming same
05/29/2008WO2008039369A3 Field-effect heterostructure transistors
05/29/2008WO2007149487A8 Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth
05/29/2008WO2007145701A3 Nanoscale wire methods and devices
05/29/2008WO2007133775A3 Integrated circuit, device, system, and method of fabrication
05/29/2008WO2007103419A3 Structures and designs for improved efficiency and reduced strain iii-nitride heterostructure semiconductor devices
05/29/2008WO2007030679A3 Materials for the formation of polymer junction diodes
05/29/2008US20080124905 Solid-State Circuit Assembly
05/29/2008US20080124881 INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY
05/29/2008US20080124862 Semiconductor device and manufacturing method thereof
05/29/2008US20080124854 Method for fabricating a semiconductor device and a semiconductor device fabricated by the method
05/29/2008US20080124850 Method for manufacturing semiconductor device and heat treatment method
05/29/2008US20080124825 Manufacturing method of liquid crystal display device
05/29/2008US20080124545 Monocrystal, Nano Wire Material, Electronic Element, and Method of Producing Nano Wire Material
05/29/2008US20080123430 Non-volatile memory unit and array
05/29/2008US20080123418 Semiconductor memory having both volatile and non-volatile functionality and method of operating
05/29/2008US20080123413 Multiple use memory chip
05/29/2008US20080122517 Semiconductor device and method for controlling a semiconductor device
05/29/2008US20080122098 Nonvolatile semiconductor memory and method for fabricating the same
05/29/2008US20080122091 Semiconductor device and method for producing a semiconductor device
05/29/2008US20080122054 Circuit Module Having Force Resistant Construction
05/29/2008US20080122041 Semiconductor device and method for producing such a device
05/29/2008US20080122037 Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch
05/29/2008US20080122036 Reverse-biased PN diode decoupling capacitor
05/29/2008US20080122035 Semiconductor device
05/29/2008US20080122034 Multiple Function Thin-Film Resistor-Capacitor Array
05/29/2008US20080122033 Semiconductor device and manufacturing the same
05/29/2008US20080122032 Semiconductor devices with MIM-type decoupling capacitors and fabrication method thereof
05/29/2008US20080122031 Vertical electrical device
05/29/2008US20080122030 Methods for enhancing trench capacitance and trench capacitor
05/29/2008US20080122029 Inductor utilizing pad metal layer
05/29/2008US20080122027 Semiconductor device and method of cutting electrical fuse
05/29/2008US20080122026 Structure for creation of a programmable device
05/29/2008US20080122022 Solid state imaging device and method of manufacturing the same
05/29/2008US20080122020 Microelectromechanical devices and fabrication methods
05/29/2008US20080122019 Semiconductor Device and Method of Manufacturing the Same
05/29/2008US20080122018 work function adjustment on fully silicided (fusi) gate
05/29/2008US20080122017 Semiconductor device and fabricating method thereof
05/29/2008US20080122016 Semiconductor device and fabricating method thereof
05/29/2008US20080122015 Modulated-Vt transistor
05/29/2008US20080122014 Semiconductor device
05/29/2008US20080122012 Semiconductor device and method of manufacturing the same
05/29/2008US20080122010 Transistor having source/drain region only under sidewall spacer except for contacts and method
05/29/2008US20080122006 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
05/29/2008US20080122003 Non-conformal stress liner for enhanced mosfet performance
05/29/2008US20080122001 Integrated circuit having doped semiconductor body and method
05/29/2008US20080121999 Semiconductor device which has mos structure and method of manufacturing the same
05/29/2008US20080121998 Apparatus and method for selectively recessing spacers on multi-gate devices
05/29/2008US20080121997 Multi-gate semiconductor device and method for forming the same
05/29/2008US20080121996 Transistor with carbon nanotube channel and method of manufacturing the same
05/29/2008US20080121994 Deep junction soi mosfet with enhanced edge body contacts
05/29/2008US20080121993 Power switching semiconductor devices including rectifying junction-shunts
05/29/2008US20080121991 Semiconductor component arrangement and method for producing thereof
05/29/2008US20080121990 Semiconductor device and manufacture method therefor
05/29/2008US20080121989 Mos-gated device having a buried gate and process for forming same
05/29/2008US20080121987 Nanodot and nanowire based MOSFET structures and fabrication processes
05/29/2008US20080121986 Trenched mosfet device configuration with reduced mask processes
05/29/2008US20080121985 Structure and method to improve short channel effects in metal oxide semiconductor field effect transistors
05/29/2008US20080121984 Flash memory structure and method for fabricating the same
05/29/2008US20080121983 Gate and method of forming the same, and memory device and method of manufacturing the same
1 ... 952 953 954 955 956 957 958 959 960 961 962 963 964 965 966 967 968 969 970 971 972 ... 2182