| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/17/2008 | US20080169534 Reduced defect silicon or silicon germanium deposition in micro-features |
| 07/17/2008 | US20080169532 III Nitride Single Crystal, and Manufacturing Method Therefor and Semiconductor Device Therewith |
| 07/17/2008 | US20080169531 Methods of forming nano line structures in microelectronic devices and related devices |
| 07/17/2008 | US20080169527 Semiconductor Device And Method Of Manufacturing Such A Device |
| 07/17/2008 | US20080169526 Power semiconductor device |
| 07/17/2008 | US20080169522 Moving element and method of manufacturing the same |
| 07/17/2008 | US20080169521 MEMS structure using carbon dioxide and method of fabrication |
| 07/17/2008 | US20080169520 Dieletric film layered product, semiconductor apparatus and production methods of the same |
| 07/17/2008 | US20080169519 Process for manufacturing a power device on a semiconductor substrate and corresponding device |
| 07/17/2008 | US20080169517 Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devices |
| 07/17/2008 | US20080169514 Stack resistor structure for integrated circuits |
| 07/17/2008 | US20080169512 Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
| 07/17/2008 | US20080169511 Dual Gate Cmos Fabrication |
| 07/17/2008 | US20080169510 Performance enhancement on both nmosfet and pmosfet using self-aligned dual stressed films |
| 07/17/2008 | US20080169507 Discrete on-chip soi resistors |
| 07/17/2008 | US20080169505 Structure of Trench MOSFET and Method for Manufacturing the same |
| 07/17/2008 | US20080169503 Semiconductor nanostructures, semiconductor devices, and methods of making same |
| 07/17/2008 | US20080169502 Dual bit flash memory devices and methods for fabricating the same |
| 07/17/2008 | US20080169501 Flash memory device with hybrid structure charge trap layer and method of manufacturing same |
| 07/17/2008 | US20080169500 Low voltage non-volatile memory cell with shared injector for floating gate |
| 07/17/2008 | US20080169499 Flash memory using sti structure in element isolation region and manufacturing method thereof |
| 07/17/2008 | US20080169498 Non-volatile programmable memory cell and array for programmable logic array |
| 07/17/2008 | US20080169497 Non-volatile semiconductor memory and method for fabricating a non-volatile semiconductor memory |
| 07/17/2008 | US20080169496 Methods of forming NAND cell units |
| 07/17/2008 | US20080169495 Fin differential mos varactor diode |
| 07/17/2008 | US20080169493 Semiconductor devices and dynamic random access memories having a retrograde region and methods of forming the same |
| 07/17/2008 | US20080169492 Spin Transistor Using Stray Magnetic Field |
| 07/17/2008 | US20080169490 Semiconductor device and manufacturing method thereof |
| 07/17/2008 | US20080169489 Multi-walled tube and method of manufacture |
| 07/17/2008 | US20080169485 Field effect transistor device and method of producing the same |
| 07/17/2008 | US20080169484 Strained Transistor with Optimized Drive Current and Method of Forming |
| 07/17/2008 | US20080169483 Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same |
| 07/17/2008 | US20080169476 Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer |
| 07/17/2008 | US20080169475 SiC Schottky barrier semiconductor device |
| 07/17/2008 | US20080169473 Thin film transistor array panel |
| 07/17/2008 | US20080169472 Gate and an elongated semiconductor body where a center region spirals around the gate and end regions extend outward; transistor size can be scaled without decreasing the effective channel length to the point where deleterious short-channel effects are exhibited |
| 07/17/2008 | US20080169471 Display substrate and method of manufacturing the same |
| 07/17/2008 | US20080169470 Thin film transistor array substrate and method of manufacturing the same |
| 07/17/2008 | US20080169469 Display device |
| 07/17/2008 | US20080169468 Method and Apparatus For Fabricating Polycrystalline Silicon Film Using Transparent Substrate |
| 07/17/2008 | US20080169460 Organic light emitting diodes display and aging method thereof |
| 07/17/2008 | US20080169016 Nanowire electronic devices and method for producing the same |
| 07/17/2008 | DE19808928B4 Kraft/Drehmomentsensor Force / torque sensor |
| 07/17/2008 | DE112006002488T5 Halbleiter-Baueinheit Semiconductor package |
| 07/17/2008 | DE112006002431T5 Abschlussstruktur Degree structure |
| 07/17/2008 | DE112006002267T5 Transistor, Verfahren zu seiner Herstellung und Halbleiterbauelement mit einem solchen Transistor Transistor, method of producing the semiconductor device and with such a transistor |
| 07/17/2008 | DE112005000394B4 Halbleiterbauelement mit Mehrgatestruktur und Verfahren zu seiner Herstellung A semiconductor device comprising multi-gate structure and process for its preparation |
| 07/17/2008 | DE102007055880A1 Halbleiteranordnungen und Verfahren zur Herstellung derselben Semiconductor devices and methods of manufacturing the same |
| 07/17/2008 | DE102007002119A1 Organic thin film transistor i.e. top gate-organic thin film transistor, manufacturing method, involves bringing semiconductor layer that is made of organic semiconductor material, on intermediate layer between source- and drain electrodes |
| 07/17/2008 | DE102006061994A1 Ladungskompensationsbauelement mit einer Driftstrecke zwischen zwei Elektroden und Verfahren zur Herstellung desselben Charge compensation component thereof with a drift path between the two electrodes and methods for making |
| 07/17/2008 | DE102006007096B4 MOSFET mit Kompensationsstruktur und Randabschluss sowie Verfahren zu dessen Herstellung MOSFET with compensation structure and edge finish and method for its manufacture |
| 07/17/2008 | CA2674448A1 Nitride nanowires and method of producing such |
| 07/16/2008 | EP1944868A1 Integrated circuit that emits light, optical head that incorporates the integrated circuit, and image forming apparatus that uses the optical head |
| 07/16/2008 | EP1944810A2 SiC schottky barrier semiconductor device |
| 07/16/2008 | EP1944806A2 Highly sensitive photo-sensing element and photo-sensing device using the same |
| 07/16/2008 | EP1944795A2 Use of F-based gate etch to passivate the high-K/metal gate stack for deep submicron transistor technologies |
| 07/16/2008 | EP1944794A1 A method for controlled formation of a gate dielectric stack |
| 07/16/2008 | EP1943680A2 A method of making an inverted-t channel transistor |
| 07/16/2008 | EP1943679A1 High density, high q capacitor on top of protective layer |
| 07/16/2008 | EP1943671A2 Multiple device types including an inverted-t channel transistor and method therefor |
| 07/16/2008 | EP1869709A4 Structure and method of fabricating high-density, trench-based non-volatile random access sonos memory cells for soc applications |
| 07/16/2008 | EP1497868A4 Structure and method for an emitter ballast resistor in an hbt |
| 07/16/2008 | EP1060522B1 Display devices |
| 07/16/2008 | CN101223647A Silicon carbide junction barrier schottky diodes with suppressed minority carrier injection |
| 07/16/2008 | CN101223646A 新颖的低功率非易失性存储器和栅极堆叠 Novel low-power nonvolatile memory and a gate stack |
| 07/16/2008 | CN101223645A Organic thin film transistor and active matrix display |
| 07/16/2008 | CN101223644A 半导体装置 Semiconductor device |
| 07/16/2008 | CN101223643A Direct optical light guide |
| 07/16/2008 | CN101223633A Micro-electro-mechanical transducers |
| 07/16/2008 | CN101223629A Semiconductor device manufacturing method |
| 07/16/2008 | CN101222021A Formulation and method for depositing a material on a substrate |
| 07/16/2008 | CN101221994A Highly sensitive photo-sensing element and photo-sensing device using the same |
| 07/16/2008 | CN101221991A Grid control varactor structure and producing method thereof |
| 07/16/2008 | CN101221990A Semiconductor device and method of manufacturing the same |
| 07/16/2008 | CN101221989A SiC schottky barrier semiconductor device |
| 07/16/2008 | CN101221988A Semiconductor structure with high breakdown voltage and high resistance, and its manufacturing method |
| 07/16/2008 | CN101221987A Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure |
| 07/16/2008 | CN101221986A Thin film SOI thick grid oxygen power device with grid field plate |
| 07/16/2008 | CN101221985A Double-grid field effect transistor and its forming method |
| 07/16/2008 | CN101221984A High speed gallium arsenide based channel strain high electron mobility transistor material |
| 07/16/2008 | CN101221983A Real space transferring high electron mobility fieldistor material |
| 07/16/2008 | CN101221982A Heterojunction bipolar transistor and its forming method |
| 07/16/2008 | CN101221981A Electronic component with mixed high dielectric material layer and manufacturing method thereof |
| 07/16/2008 | CN101221980A Power semiconductor device |
| 07/16/2008 | CN101221979A Semiconductor structure with sub-photoetching width faceting and its manufacturing method |
| 07/16/2008 | CN101221976A 有机发光装置及其制造方法 The organic light emitting device and manufacturing method |
| 07/16/2008 | CN101221967A CMOS image sensor and method for manufacturing the same |
| 07/16/2008 | CN101221966A CMOS image sensor and method for manufacturing the same |
| 07/16/2008 | CN101221956A Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure |
| 07/16/2008 | CN101221950A Resistor structure and its forming method |
| 07/16/2008 | CN101221901A Silicon field effect transistor on stress insulator and its production method |
| 07/16/2008 | CN101221330A 液晶显示装置 The liquid crystal display device |
| 07/16/2008 | CN101220147A Thin film transistors with poly(arylene ether)polymers as gate dielectrics and passivation layers |
| 07/16/2008 | CN100403576C Dual panel-type organic electroluminescent display device and method for fabricating the same |
| 07/16/2008 | CN100403553C Thick film force sensitive slurry |
| 07/16/2008 | CN100403552C Capacitive momentum sensor |
| 07/16/2008 | CN100403551C High-tension element structure |
| 07/16/2008 | CN100403550C Vertical type wide bandgap semiconductor device structure and making method |
| 07/16/2008 | CN100403549C 半导体器件及保持电路 The semiconductor device and hold circuit |
| 07/16/2008 | CN100403548C Switch component |