Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2009
03/05/2009US20090057712 Semiconductor device
03/05/2009US20090057711 Semiconductor device with a u-shape drift region
03/05/2009US20090057710 Insulated Gate Bipolar Transistor and Method for Manufacturing the Same
03/05/2009US20090057686 Semiconductor device and electric power converter, drive inverter, general-purpose inverter and super-power high-frequency communication equipment using the semiconductor device
03/05/2009US20090057685 Bipolar device and fabrication method thereof
03/05/2009US20090057684 Nitride semiconductor device and method for producing nitride semiconductor device
03/05/2009US20090057683 Semiconductor Device and Method of Manufacturing The Semiconductor Device
03/05/2009US20090057682 Active matrix substrate, display device, television receiver, manufacturing method of active matrix substrate, forming method of gate insulating film
03/05/2009US20090057680 Semiconductor device and manufacturing method thereof
03/05/2009US20090057679 Thin film transistor and manufacturing method thereof
03/05/2009US20090057678 Method of Forming an Integrated Circuit and Integrated Circuit
03/05/2009US20090057677 Ferroelectric device and method for fabricating the same
03/05/2009US20090057676 Thin film semiconductor device
03/05/2009US20090057675 Display device and electronic appliance including the display device
03/05/2009US20090057672 Display device and manufacturing method of the same
03/05/2009US20090057670 Semiconductor Device and Process for Production Thereof
03/05/2009US20090057668 Display Element and Method of Manufacturing the Same
03/05/2009US20090057667 Display device and method for fabricating the same
03/05/2009US20090057665 Power managing semiconductor die with reduced power consumption
03/05/2009US20090057663 Oxide thin film transistor and method of manufacturing the same
03/05/2009US20090057662 Nanoparticle Semiconductor Device and Method for Fabricating
03/05/2009US20090057661 Method for Chemical Mechanical Planarization of Chalcogenide Materials
03/05/2009US20090057655 Organic thin film transistor comprising gate electrode of nanocrystalline conductive carbon layer, fabrication method thereof, and organic semiconductor device comprising the same
03/05/2009US20090057654 Spin fet and magnetoresistive element
03/05/2009US20090057653 Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires
03/05/2009US20090057651 Gated Quantum Resonant Tunneling Diode Using CMOS Transistor with Modified Pocket and LDD Implants
03/05/2009US20090057650 Nanoscale wires and related devices
03/05/2009US20090057649 organic semiconductor layer comprises heterocyclic compound containing nitrogen atom formed by condensation between five member rings each having nitrogen atom at their condensation sites or between five member ring and six member ring each having nitrogen atom at their condensation sites; fast response
03/05/2009US20090057648 High Hole Mobility P-Channel Ge Transistor Structure on Si Substrate
03/05/2009DE112006003714T5 Ladungsgleichgewichts-Isolierschicht-Bipolartransistor Charge balance insulated gate bipolar transistor
03/05/2009DE112005002428T5 Doppelgate- und Trigate-Transistoren mit unabhängigem Zugriff in demselben Prozeßfluß Doppelgate- and tri-gate transistors with independent access to the same process flow
03/05/2009DE112004002017B4 Verfahren zum epitaktischen Abscheiden von Source/Drain von MOSFETs A method for epitaxial deposition of the source / drain of MOSFET
03/05/2009DE10323013B4 Verfahren zur Herstellung eines Halbleiterbauelementes mit PMOS- und NMOS-Transistor A process for producing a semiconductor device with PMOS and NMOS transistor
03/05/2009DE10234155B4 Preßgespritztes Leistungsbauelement Preßgespritztes power device
03/05/2009DE102008045240A1 Plaited-Signal-Manifold-Anschlussstruktur für ein Hochfrequenzbauelement und ein solches Hochfrequenzbauelement Placard signal manifold connecting structure for a high frequency device and a high frequency device such
03/05/2009DE102008039882A1 LCD-Treiber-IC und Verfahren zu dessen Herstellung LCD driver IC and process for its preparation
03/05/2009DE102008039845A1 Halbleiterbauelement mit einem Halbleiterkörper A semiconductor device comprising a semiconductor body
03/05/2009DE102008034164A1 Halbleitermodul Semiconductor module
03/05/2009DE102008032897A1 Nitridhalbleitervorrichtung, Doherty-Verstärker und Drainspannungsgesteuerter Verstärker Nitride semiconductor, Doherty amplifier and drain voltage controlled amplifier
03/05/2009DE102007040791A1 Power semiconductor device comprises an internal capacitor between an internal gate electrode and an electrode, a monolithically integrated auxiliary condenser, an internal gate resistor, a vertical drift zone, and a lateral drift zone
03/05/2009DE102007040399A1 Vorrichtung zur galvanisch getrennten Messung der elektrischen Leistungsaufnahme eines Zweipols Apparatus for electrically isolated measurement of electrical power consumption of a dipole
03/05/2009DE102007026086B4 Verfahren zur Ausbildung einer dielektrischen Dünnschicht auf einem Titansubstrat, mit dem Verfahren hergestelltes Titansubstrat mit Dünnschicht sowie seine Verwendung A method of forming a dielectric thin film on a titanium substrate produced by the method of titanium substrate with thin-film and the use thereof
03/05/2009DE10196596B4 Verfahren zur Herstellung einer Kristallschicht in einer Verbindungshalbleiter-Mehrschichtsstruktur A process for producing a crystal layer in a compound semiconductor multilayer structure
03/05/2009CA2671231A1 Schottky barrier diode
03/04/2009EP2031648A2 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
03/04/2009EP2031643A2 Blocking dielectric bandgap engineered SONOS/MONOS memory
03/04/2009EP2030244A2 Near natural breakdown device
03/04/2009EP2030243A1 Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
03/04/2009EP2030242A1 Semiconductor component and rectifier arrangement
03/04/2009EP2030223A1 Symmetrical mim capacitor design
03/04/2009EP1644973A4 Bipolar transistor and method of making same
03/04/2009EP1036414B1 A method of forming a chip scale package using large ductile solder balls
03/04/2009EP0968532B1 Lateral silicon carbide semiconductor device having a drift region with varying doping level
03/04/2009CN101379873A Surface micromachined differential microphone
03/04/2009CN101379619A Semiconductor structure including trench capacitor and trench resistor
03/04/2009CN101379618A Semiconductor device with improved solder joint
03/04/2009CN101379613A Electronic device with a multi-gated electrode structure and a process for forming the electronic device
03/04/2009CN101379610A Low resistance gate for power MOSFET applications and method of manufacture
03/04/2009CN101379601A Nitrogen based implants for defect reduction in strained silicon
03/04/2009CN101379596A Method of forming trench contacts for MOS transistors
03/04/2009CN101379539A Reflective TFT substrate and method for manufacturing reflective TFT substrate
03/04/2009CN101378085A Metal-insulator-metal capacitor and method for manufacturing the same
03/04/2009CN101378084A Nonvolatile semiconductor memory element and manufacturing method thereof
03/04/2009CN101378083A Nonvolatile semiconductor memory device
03/04/2009CN101378082A Display device and manufacturing method of the same
03/04/2009CN101378081A LCD driver IC and method for manufacturing the same
03/04/2009CN101378080A Semiconductor device and fabricating method thereof
03/04/2009CN101378079A Semiconductor device
03/04/2009CN101378078A Semiconductor device and method of manufacturing the same
03/04/2009CN101378077A Semiconductor device
03/04/2009CN101378076A Inverted nonvolatile memory device, stack module, and method of fabricating the same
03/04/2009CN101378075A LDMOS, and semicondutor device integrating with LDMOS and CMOS
03/04/2009CN101378074A Nitride semiconductor device, doherty amplifier and drain voltage controlled amplifier
03/04/2009CN101378073A Insulated gate bipolar transistor and method for manufacturing the same
03/04/2009CN101378072A Spin FET and magnetoresistive element
03/04/2009CN101378066A Nand type nonvolatile semiconductor memory device having sideface electrode shared by memory cells
03/04/2009CN101378063A Semiconductor device and a method for fabricating the same
03/04/2009CN101378062A Ed inverting circuit and integrated circuit element including the same
03/04/2009CN101378022A Method for forming a semiconductor element
03/04/2009CN101378021A Semiconductor element and manufacturing method thereof
03/04/2009CN100466322C Magnetic storage element, production method and driving method thereof, and memory array
03/04/2009CN100466296C Variable capacitor
03/04/2009CN100466295C Method for manufacturing mesa semiconductor device
03/04/2009CN100466294C Integrated coil inductors for ic devices
03/04/2009CN100466293C Flash memory device and the manufacturing method thereof
03/04/2009CN100466292C Dielectric storage memory cell having high permittivity top dielectric and the method thereof
03/04/2009CN100466291C Thin film transistor (TFT) device structure for reducing starting voltage deviation and the manufacturing method thereof
03/04/2009CN100466290C Field effect transistor and the production method thereof
03/04/2009CN100466289C DMOS transistor with optimized periphery structure
03/04/2009CN100466288C Semiconductor device with ferroelectric film as gate insulating film and the manufacturing method thereof
03/04/2009CN100466287C Sidewall semiconductor transistors and the production method thereof
03/04/2009CN100466284C Biasing circuits, solid state imaging devices, and the production method thereof
03/04/2009CN100466276C CMOS image sensor and the production method thereof
03/04/2009CN100466264C Storage unit and method for forming a storage unit
03/04/2009CN100466263C Low-cost deep trench decoupling capacitor device and the manufacturing method thereof
03/04/2009CN100466259C Nand flash memory device and method of forming a well of a nand flash memory device
03/04/2009CN100466255C Semiconductor structure and the manufacturing method thereof
03/04/2009CN100466250C Electronic elements with self-assembling microstructures
03/04/2009CN100466235C Semiconductor package with two semiconductor tube cores arranged in a pubic clamps
03/04/2009CN100466232C Method of manufacturing electrically-erasable programma-ble read only memory cell
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