Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2009
04/23/2009US20090101959 Nonvolatile semiconductor memory device and method for manufacturing the same
04/23/2009US20090101957 Simplified method of fabricating isolated and merged trench capacitors
04/23/2009US20090101944 Electronic device and method for manufacturing the same
04/23/2009US20090101943 Reversely Tapered Contact Structure Compatible With Dual Stress Liner Process
04/23/2009US20090101942 Planar field effect transistor structure and method
04/23/2009US20090101941 Wrapped gate junction field effect transistor
04/23/2009US20090101940 Dual gate fet structures for flexible gate array design methodologies
04/23/2009US20090101939 Group III Nitride Field Effect Transistors (FETS) Capable of Withstanding High Temperature Reverse Bias Test Conditions
04/23/2009US20090101938 Electrostatic Discharge Protection Circuit
04/23/2009US20090101937 Novel method for four direction low capacitance esd protection
04/23/2009US20090101918 Semiconductor element and method for manufacturing same
04/23/2009US20090101917 Thin film transistor substrate and display apparatus having the same
04/23/2009US20090101916 Microcrystalline semiconductor film, thin film transistor, and display device including thin film transistor
04/23/2009US20090101911 Thin film transistor, display device having the same, and associated methods
04/23/2009US20090101910 Thin-film transistor
04/23/2009US20090101906 Semiconductor device and method for manufacturing semiconductor device
04/23/2009US20090101904 Display device
04/23/2009US20090101901 Semiconductor device and manufacturing method thereof
04/23/2009US20090101900 Optical Sensor with Photo TFT
04/23/2009US20090101899 Stacked structure and method of patterning the same and organic thin film transistor and array having the same
04/23/2009US20090101898 Method and resulting structure for fabricating test key structures in dram structures
04/23/2009US20090101894 Method for fabricating metal-oxide semiconductor transistors
04/23/2009US20090101889 Optically interface electrically controlled devices
04/23/2009US20090101888 METHOD OF MANUFACTURING IN (As) Sb SEMICONDUCTOR ON LATTICE-MISMATCHED SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME
04/23/2009US20090101887 Silicon germanium heterostructure barrier varactor
04/23/2009US20090101885 Method of producing phase change memory device
04/23/2009US20090101881 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
04/23/2009DE112007000919T5 Gemeinsames Gehäuse für eine hohe Leistungsdichte aufweisende Bauteile, insbesondere für IGBTs und Dioden, mit niedriger Induktivität und drahtfreien Bond-Verbindungen Common housing for containing a high power density components, in particular for IGBTs and diodes with low inductance and wire bonding-free compounds
04/23/2009DE10220189B4 Gate-Struktur für einen Transistor und Verfahren zu deren Herstellung Gate structure for a transistor and methods for their preparation
04/23/2009DE102008048651A1 Stapelkondensator in einem Halbleiterbauelement und Verfahren zu seiner Herstellung Stacked capacitor in a semiconductor device and process for its preparation
04/23/2009DE102008047378A1 Leistungsbauelement und ein Verfahren zum Herstellen eines Leistungsbauelements Power component and a method for manufacturing a power device
04/23/2009DE102008035537A1 Halbleitervorrichtung und Verfahren zu ihrer Bildung Semiconductor device and methods for their formation
04/23/2009DE102008024464A1 Halbleitervorrichtung Semiconductor device
04/23/2009DE102007050288A1 Halbleiterbauteil Semiconductor device
04/23/2009DE102007049561A1 Halbleiterkörper und Verfahren zum Bearbeiten eines Halbleiterkörpers Semiconductor body and method of processing a semiconductor body
04/23/2009DE102005021450B4 Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises und dessen Verwendung Integrated circuit and method for producing an integrated circuit and the use thereof
04/23/2009DE102004039209B4 Verfahren zur Herstellung einer n-dotierten Feldstoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Feldstoppzone A process for producing an n-doped field stop zone in a semiconductor body and the semiconductor device having a field stop zone
04/23/2009CA2700552A1 Drug-eluting nanowire array
04/22/2009EP2051308A2 Method for manufacturing a nitride semiconductor device and device manufactured by the method
04/22/2009EP2051296A2 Thin film transistor array and display apparatus
04/22/2009EP2051292A1 Semiconductor device
04/22/2009EP2051291A2 High efficiency rectifier
04/22/2009EP2051287A1 Method for forming conductive film, thin film transistor, panel with thin film transistor, and method for manufacturing thin film transistor
04/22/2009EP2050141A2 System and method for manufacturing a thin-film device
04/22/2009EP2050140A1 Method of manufacturing a double gate transistor
04/22/2009EP2050139A1 Laminated structure, electronic element using the same, manufacturing method therefor, electronic element array, and display unit
04/22/2009EP2050124A1 Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails
04/22/2009EP2003686A9 Field effect transistor
04/22/2009EP1878057A4 One time programmable read only memory
04/22/2009EP1421612B1 LDMOS Transistor and method of fabricating the same
04/22/2009EP1329958B1 Electronic device having controllable conductance
04/22/2009EP1317768B1 Dry isotropic removal of inorganic anti-reflective coating after poly gate etching
04/22/2009EP0979530B1 Semiconductor switch devices and their manufacture
04/22/2009CN101416320A TFT substrate, reflective TFT substrate and method for manufacturing such substrates
04/22/2009CN101416319A Vertical-channel junction field-effect transistors having buried gates and methods of making
04/22/2009CN101416318A ESD protection circuit with isolated diode element and method thereof
04/22/2009CN101416317A Grown nanofin transistors
04/22/2009CN101416316A Field effect transistor with mixed-crystal-orientation channel
04/22/2009CN101416315A Charge balance techniques for power devices
04/22/2009CN101416313A Power IC device and method for manufacturing same
04/22/2009CN101416310A Multi-die semiconductor package
04/22/2009CN101416300A Semiconductor device comprising soi transistors and bulk transistors and a method of forming the same
04/22/2009CN101416290A Field effect transistor
04/22/2009CN101416289A Field effect transistor
04/22/2009CN101416288A Grown nanofin transistors
04/22/2009CN101416287A Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions
04/22/2009CN101416286A Silicon oxynitride gate dielectric formation using multiple annealing steps
04/22/2009CN101414810A Transistor resistance and correlation method
04/22/2009CN101414640A IC containing nonvolatile memory unit and preparing method thereof
04/22/2009CN101414639A Lateral wall floating gate reset EPROM memory structure and manufacturing method thereof
04/22/2009CN101414638A Display device and method of manufacturing display device
04/22/2009CN101414637A Groove insulation cross-over gate heterojunction field effect transistor
04/22/2009CN101414636A Groove insulated gate type source-leakage composite field plate transistor with high electron mobility
04/22/2009CN101414635A Groove insulated gate type gate-leakage composite field plate power device and preparation method thereof
04/22/2009CN101414634A Heterojunction field effect transistor for groove insulated gate type multiple source field plate
04/22/2009CN101414633A Groove insulated gate type composite gate field plate device with high electron mobility
04/22/2009CN101414632A Fin type fet
04/22/2009CN101414631A Semiconductor device and manufacture method thereof
04/22/2009CN101414630A Transverse diffusion metallic oxide transistor
04/22/2009CN101414629A Source field plate transistor with high electron mobility
04/22/2009CN101414628A Groove Gamma gate transistor with high electron mobility and preparing method thereof
04/22/2009CN101414627A Insulated gate type source-leakage composite field plate transistor with high electron mobility and preparing method thereof
04/22/2009CN101414626A Insulated gate type gate-leakage composite field plate power device
04/22/2009CN101414625A Groove gate type gate-leakage composite field plate transistor with high electron mobility
04/22/2009CN101414624A Gamma gate heterojunction field effect transistor and preparation method thereof
04/22/2009CN101414623A Groove gate type source-leakage composite field plate heterojunction field effect transistor and preparation method thereof
04/22/2009CN101414622A Composite field plate heterojunction field effect transistor based on source field plate and leakage field plate
04/22/2009CN101414621A 半导体装置 Semiconductor device
04/22/2009CN101414620A Electronic device, thin-film transistor structure, and flat panel display having the same
04/22/2009CN101414609A Semiconductor element
04/22/2009CN101414563A Semiconductor device
04/22/2009CN101414557A Plasma surface treatment for Si and metal nanocrystal nucleation
04/22/2009CN101414553A Semiconductor device and method of processing the same
04/22/2009CN101414550A Production method for semiconductor device
04/22/2009CN101414456A Logic circuit, timing generation circuit, display device, and portable terminal
04/22/2009CN101414436A 存储元件和显示装置 Memory element and a display device
04/22/2009CN101414083A LCD display panel, pixel structure and switch device
04/22/2009CN100481557C Electrochemical device and manufacturing method thereof
04/22/2009CN100481552C Phase transfer element and fabricating method thereof, and phase transfer memory cell
04/22/2009CN100481536C Nitride-based light-emitting device and method of manufacturing the same