| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/07/2009 | DE10314505B4 Verbesserte Diodenstruktur für Soi-Schaltungen Improved diode structure for Soi circuits |
| 05/07/2009 | DE10208728B4 Ein Verfahren zur Herstellung eines Halbleiterelements mit unterschiedlichen Metallsilizidbereichen A method of manufacturing a semiconductor element with different Metallsilizidbereichen |
| 05/07/2009 | DE10200873B4 Dynamischer Sensor mit einer sich in Übereinstimmung mit einer darauf ausgeübten dynamischen Kraft ändernden Kapazität Dynamic sensor with a capacity varying in accordance with a dynamic force exerted thereon |
| 05/07/2009 | DE102008056206A1 Halbleitervorrichtung und Verfahren zu deren Fertigung A semiconductor device and method of manufacturing |
| 05/07/2009 | DE102008049534A1 Halbleiterstruktur Semiconductor structure |
| 05/07/2009 | DE102007015304A1 Rückwärtsleitender (RC-) IGBT mit senkrecht angeordneter Ladungsträgerlebensdaueranpassung Reverse-conducting (RC) IGBT with vertically arranged carrier lifetime adaptation |
| 05/07/2009 | DE102006040762B4 N-Kanalfeldeffekttransistor mit einer Kontaktätzstoppschicht in Verbindung mit einer Zwischenschichtdielektrikumsteilschicht mit der gleichen Art an innerer Verspannung N-channel field effect transistor with a contact etch stop in conjunction with a Zwischenschichtdielektrikumsteilschicht with the same kind of internal stress |
| 05/07/2009 | CA2701295A1 A deposit and electrical devices comprising the same |
| 05/06/2009 | EP2056351A2 Semiconductor device |
| 05/06/2009 | EP2056350A1 Method for making quantum dots |
| 05/06/2009 | EP2056087A1 Pressure sensor |
| 05/06/2009 | EP2055811A2 Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor |
| 05/06/2009 | EP2055672A1 n-TYPE SEMICONDUCTOR CARBON NANOMATERIAL, METHOD FOR PRODUCING n-TYPE SEMICONDUCTOR CARBON NANOMATERIAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 05/06/2009 | EP2054939A1 Production method of thin film transistor using amorphous oxide semiconductor film |
| 05/06/2009 | EP2054938A2 Liquid metal wetting of micro-fabricated charged particle emission structures |
| 05/06/2009 | EP2054928A1 Dram transistor with recessed gates and methods of fabricating the same |
| 05/06/2009 | EP2054925A2 Nonvolatile memories with shaped floating gates |
| 05/06/2009 | EP2011157A4 Electronic devices containing acene-thiophene copolymers with silylethynyl groups |
| 05/06/2009 | EP1776715A4 Method for forming a gate electrode having a metal |
| 05/06/2009 | EP1393352A4 Semiconductor device, semiconductor layer and production method thereof |
| 05/06/2009 | EP1252656B1 Protection device for schottky diodes |
| 05/06/2009 | CN101427386A Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics |
| 05/06/2009 | CN101427381A Electronic devices containing acene-thiophene copolymers with silylethynyl groups |
| 05/06/2009 | CN101427380A Charge storage structure formation in transistor with vertical channel region |
| 05/06/2009 | CN101427379A Transistor and method with dual layer passivation |
| 05/06/2009 | CN101427378A Method and structures for measuring gate tunneling leakage parameters of field effect transistors |
| 05/06/2009 | CN101427374A High performance 3D FET structures, and methods for forming the same using preferential crystallographic etching |
| 05/06/2009 | CN101427365A Semiconductor sensor device and method for manufacturing same |
| 05/06/2009 | CN101426966A Chemically attached diamondoids for CVD diamond film nucleation |
| 05/06/2009 | CN101425544A Thin film transistor, and display device having the thin film transistor |
| 05/06/2009 | CN101425543A Thin-film transistor substrate and method of manufacturing the same |
| 05/06/2009 | CN101425542A Thin-film transistor and LCD device |
| 05/06/2009 | CN101425541A Semiconductor element and device using the same |
| 05/06/2009 | CN101425540A Semiconductor device and method of manufacture |
| 05/06/2009 | CN101425539A High-mobility trench mosfets |
| 05/06/2009 | CN101425538A Metal-gated mosfet devices having scaled gate stack thickness |
| 05/06/2009 | CN101425537A Semiconductor device |
| 05/06/2009 | CN101425536A Bipolar junction transistor |
| 05/06/2009 | CN101425535A Memory and manufacturing method thereof |
| 05/06/2009 | CN101425534A Transistor and method of fabricating the same |
| 05/06/2009 | CN101425484A Nitride semiconductor free-standing substrateand device using the same |
| 05/06/2009 | CN101425478A Method for providing self-alignment contact in semiconductor device set |
| 05/06/2009 | CN101425466A Semiconductor component and method of manufacture |
| 05/06/2009 | CN101425465A Semiconductor component and method of manufacture |
| 05/06/2009 | CN101425463A TVS diode device construction with low voltage/low leakage current and production method thereof |
| 05/06/2009 | CN101425457A High dielectric constant grid dielectric material forming method and a semiconductor device |
| 05/06/2009 | CN101425453A Alpha tantalum layer forming method, mim capacitor and forming method thereof |
| 05/06/2009 | CN101424874A Exposure mask and method for fabricating thin-film transistor |
| 05/06/2009 | CN100485983C Semiconductor device with tunable energy band gap |
| 05/06/2009 | CN100485978C Nitride-based semiconductor light-emitting device |
| 05/06/2009 | CN100485971C Gallium arsenide PIN diode and preparation method thereof |
| 05/06/2009 | CN100485970C Silicon carbide semiconductor device with junction type field effect transistor and its producing method |
| 05/06/2009 | CN100485969C Method for fabricating semiconductor device |
| 05/06/2009 | CN100485968C Chip and manufacturing method thereof |
| 05/06/2009 | CN100485967C Semiconductor device and method of manufacturing the same |
| 05/06/2009 | CN100485966C High-voltage P-type metal oxide transistor and producing method thereof |
| 05/06/2009 | CN100485965C Semiconductor device |
| 05/06/2009 | CN100485964C 半导体装置及其形成方法 Semiconductor device and method of forming |
| 05/06/2009 | CN100485963C Semiconductor element, memory element, method for operating memory unit and memory element |
| 05/06/2009 | CN100485962C Semiconductor device and method for fabricating the same |
| 05/06/2009 | CN100485961C Metal-oxide-semiconductor device having an enhanced shielding structure |
| 05/06/2009 | CN100485960C Semiconductor device having an edge termination structure and method of manufacture thereof |
| 05/06/2009 | CN100485959C Epitaxial structure of the compound insulation layer nitride high-electronic transfer transistor and its making method |
| 05/06/2009 | CN100485958C Semiconductor device and manufacturing process thereof |
| 05/06/2009 | CN100485957C Semiconductor device |
| 05/06/2009 | CN100485956C Insulated gate field effect transistors |
| 05/06/2009 | CN100485955C Gallium nitride based semiconductor device and method of manufacturing same |
| 05/06/2009 | CN100485950C Semiconductor device and display device |
| 05/06/2009 | CN100485943C Semiconductor device |
| 05/06/2009 | CN100485941C Programmable non-volatile memory device and its forming method |
| 05/06/2009 | CN100485940C Nonvolatile memory cell with multiple floating gates and a channel connection region |
| 05/06/2009 | CN100485939C Semiconductor integrated circuit and booster circuit |
| 05/06/2009 | CN100485936C Semiconductor structure and method of manufacture thereof |
| 05/06/2009 | CN100485923C Semiconductor device of electrostatic protection circuit using thyristor as protection element |
| 05/06/2009 | CN100485918C Interconnection, interconnection forming method, thin-film transistor and displaying device |
| 05/06/2009 | CN100485911C Sensor device and sensor system, and manufacturing method therefor |
| 05/06/2009 | CN100485908C Semiconductor device with quasi self-aligned source/drain FinFET and forming method thereof |
| 05/06/2009 | CN100485891C Non-volatile memory and its making method |
| 05/06/2009 | CN100485888C High electron mobility transistor (HEMT) made of group XIII element nitride layers and manufacturing method thereof |
| 05/06/2009 | CN100485869C Polysilicon layer and preparation method |
| 05/06/2009 | CN100485868C Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor |
| 05/06/2009 | CN100485816C Nonvolatile memory, and IC card, ID card and ID tag thereof |
| 05/06/2009 | CN100485507C Muliple zone diving and vertical guiding pixel array having ultrahigh opening rate |
| 05/06/2009 | CN100485502C Liquid crystal display device |
| 05/06/2009 | CN100485500C Method for manufacturing liquid crystal display device |
| 05/06/2009 | CN100485499C Liquid crystal panel structure and forming method thereof |
| 05/06/2009 | CN100485468C Liquid-crystal display panel |
| 05/05/2009 | USRE40705 High-breakdown-voltage semiconductor apparatus |
| 05/05/2009 | US7529283 Nitride semiconductor laser device and method for fabrication thereof |
| 05/05/2009 | US7529128 Integrated code and data flash memory |
| 05/05/2009 | US7529126 Nonvolatile memory device and semiconductor device |
| 05/05/2009 | US7528827 Liquid crystal display device |
| 05/05/2009 | US7528494 Accessible chip stack and process of manufacturing thereof |
| 05/05/2009 | US7528493 Interconnect structure and method of fabrication of same |
| 05/05/2009 | US7528490 Semiconductor device and ferroelectric memory, and method for manufacturing semiconductor device |
| 05/05/2009 | US7528487 Semiconductor device having insulating material dispersed with conductive particles which establish electrical connection by penetrating to both copper conductive layer and land of wiring board |
| 05/05/2009 | US7528486 Anisotropic conductive film and bump, and packaging structure of semiconductor having the same |
| 05/05/2009 | US7528476 Semiconductor device, method for manufacturing semiconductor device, circuit board, and electronic instrument |
| 05/05/2009 | US7528465 Integrated circuit on corrugated substrate |
| 05/05/2009 | US7528463 Semiconductor on insulator structure |