Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2009
05/07/2009DE10314505B4 Verbesserte Diodenstruktur für Soi-Schaltungen Improved diode structure for Soi circuits
05/07/2009DE10208728B4 Ein Verfahren zur Herstellung eines Halbleiterelements mit unterschiedlichen Metallsilizidbereichen A method of manufacturing a semiconductor element with different Metallsilizidbereichen
05/07/2009DE10200873B4 Dynamischer Sensor mit einer sich in Übereinstimmung mit einer darauf ausgeübten dynamischen Kraft ändernden Kapazität Dynamic sensor with a capacity varying in accordance with a dynamic force exerted thereon
05/07/2009DE102008056206A1 Halbleitervorrichtung und Verfahren zu deren Fertigung A semiconductor device and method of manufacturing
05/07/2009DE102008049534A1 Halbleiterstruktur Semiconductor structure
05/07/2009DE102007015304A1 Rückwärtsleitender (RC-) IGBT mit senkrecht angeordneter Ladungsträgerlebensdaueranpassung Reverse-conducting (RC) IGBT with vertically arranged carrier lifetime adaptation
05/07/2009DE102006040762B4 N-Kanalfeldeffekttransistor mit einer Kontaktätzstoppschicht in Verbindung mit einer Zwischenschichtdielektrikumsteilschicht mit der gleichen Art an innerer Verspannung N-channel field effect transistor with a contact etch stop in conjunction with a Zwischenschichtdielektrikumsteilschicht with the same kind of internal stress
05/07/2009CA2701295A1 A deposit and electrical devices comprising the same
05/06/2009EP2056351A2 Semiconductor device
05/06/2009EP2056350A1 Method for making quantum dots
05/06/2009EP2056087A1 Pressure sensor
05/06/2009EP2055811A2 Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
05/06/2009EP2055672A1 n-TYPE SEMICONDUCTOR CARBON NANOMATERIAL, METHOD FOR PRODUCING n-TYPE SEMICONDUCTOR CARBON NANOMATERIAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
05/06/2009EP2054939A1 Production method of thin film transistor using amorphous oxide semiconductor film
05/06/2009EP2054938A2 Liquid metal wetting of micro-fabricated charged particle emission structures
05/06/2009EP2054928A1 Dram transistor with recessed gates and methods of fabricating the same
05/06/2009EP2054925A2 Nonvolatile memories with shaped floating gates
05/06/2009EP2011157A4 Electronic devices containing acene-thiophene copolymers with silylethynyl groups
05/06/2009EP1776715A4 Method for forming a gate electrode having a metal
05/06/2009EP1393352A4 Semiconductor device, semiconductor layer and production method thereof
05/06/2009EP1252656B1 Protection device for schottky diodes
05/06/2009CN101427386A Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics
05/06/2009CN101427381A Electronic devices containing acene-thiophene copolymers with silylethynyl groups
05/06/2009CN101427380A Charge storage structure formation in transistor with vertical channel region
05/06/2009CN101427379A Transistor and method with dual layer passivation
05/06/2009CN101427378A Method and structures for measuring gate tunneling leakage parameters of field effect transistors
05/06/2009CN101427374A High performance 3D FET structures, and methods for forming the same using preferential crystallographic etching
05/06/2009CN101427365A Semiconductor sensor device and method for manufacturing same
05/06/2009CN101426966A Chemically attached diamondoids for CVD diamond film nucleation
05/06/2009CN101425544A Thin film transistor, and display device having the thin film transistor
05/06/2009CN101425543A Thin-film transistor substrate and method of manufacturing the same
05/06/2009CN101425542A Thin-film transistor and LCD device
05/06/2009CN101425541A Semiconductor element and device using the same
05/06/2009CN101425540A Semiconductor device and method of manufacture
05/06/2009CN101425539A High-mobility trench mosfets
05/06/2009CN101425538A Metal-gated mosfet devices having scaled gate stack thickness
05/06/2009CN101425537A Semiconductor device
05/06/2009CN101425536A Bipolar junction transistor
05/06/2009CN101425535A Memory and manufacturing method thereof
05/06/2009CN101425534A Transistor and method of fabricating the same
05/06/2009CN101425484A Nitride semiconductor free-standing substrateand device using the same
05/06/2009CN101425478A Method for providing self-alignment contact in semiconductor device set
05/06/2009CN101425466A Semiconductor component and method of manufacture
05/06/2009CN101425465A Semiconductor component and method of manufacture
05/06/2009CN101425463A TVS diode device construction with low voltage/low leakage current and production method thereof
05/06/2009CN101425457A High dielectric constant grid dielectric material forming method and a semiconductor device
05/06/2009CN101425453A Alpha tantalum layer forming method, mim capacitor and forming method thereof
05/06/2009CN101424874A Exposure mask and method for fabricating thin-film transistor
05/06/2009CN100485983C Semiconductor device with tunable energy band gap
05/06/2009CN100485978C Nitride-based semiconductor light-emitting device
05/06/2009CN100485971C Gallium arsenide PIN diode and preparation method thereof
05/06/2009CN100485970C Silicon carbide semiconductor device with junction type field effect transistor and its producing method
05/06/2009CN100485969C Method for fabricating semiconductor device
05/06/2009CN100485968C Chip and manufacturing method thereof
05/06/2009CN100485967C Semiconductor device and method of manufacturing the same
05/06/2009CN100485966C High-voltage P-type metal oxide transistor and producing method thereof
05/06/2009CN100485965C Semiconductor device
05/06/2009CN100485964C 半导体装置及其形成方法 Semiconductor device and method of forming
05/06/2009CN100485963C Semiconductor element, memory element, method for operating memory unit and memory element
05/06/2009CN100485962C Semiconductor device and method for fabricating the same
05/06/2009CN100485961C Metal-oxide-semiconductor device having an enhanced shielding structure
05/06/2009CN100485960C Semiconductor device having an edge termination structure and method of manufacture thereof
05/06/2009CN100485959C Epitaxial structure of the compound insulation layer nitride high-electronic transfer transistor and its making method
05/06/2009CN100485958C Semiconductor device and manufacturing process thereof
05/06/2009CN100485957C Semiconductor device
05/06/2009CN100485956C Insulated gate field effect transistors
05/06/2009CN100485955C Gallium nitride based semiconductor device and method of manufacturing same
05/06/2009CN100485950C Semiconductor device and display device
05/06/2009CN100485943C Semiconductor device
05/06/2009CN100485941C Programmable non-volatile memory device and its forming method
05/06/2009CN100485940C Nonvolatile memory cell with multiple floating gates and a channel connection region
05/06/2009CN100485939C Semiconductor integrated circuit and booster circuit
05/06/2009CN100485936C Semiconductor structure and method of manufacture thereof
05/06/2009CN100485923C Semiconductor device of electrostatic protection circuit using thyristor as protection element
05/06/2009CN100485918C Interconnection, interconnection forming method, thin-film transistor and displaying device
05/06/2009CN100485911C Sensor device and sensor system, and manufacturing method therefor
05/06/2009CN100485908C Semiconductor device with quasi self-aligned source/drain FinFET and forming method thereof
05/06/2009CN100485891C Non-volatile memory and its making method
05/06/2009CN100485888C High electron mobility transistor (HEMT) made of group XIII element nitride layers and manufacturing method thereof
05/06/2009CN100485869C Polysilicon layer and preparation method
05/06/2009CN100485868C Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor
05/06/2009CN100485816C Nonvolatile memory, and IC card, ID card and ID tag thereof
05/06/2009CN100485507C Muliple zone diving and vertical guiding pixel array having ultrahigh opening rate
05/06/2009CN100485502C Liquid crystal display device
05/06/2009CN100485500C Method for manufacturing liquid crystal display device
05/06/2009CN100485499C Liquid crystal panel structure and forming method thereof
05/06/2009CN100485468C Liquid-crystal display panel
05/05/2009USRE40705 High-breakdown-voltage semiconductor apparatus
05/05/2009US7529283 Nitride semiconductor laser device and method for fabrication thereof
05/05/2009US7529128 Integrated code and data flash memory
05/05/2009US7529126 Nonvolatile memory device and semiconductor device
05/05/2009US7528827 Liquid crystal display device
05/05/2009US7528494 Accessible chip stack and process of manufacturing thereof
05/05/2009US7528493 Interconnect structure and method of fabrication of same
05/05/2009US7528490 Semiconductor device and ferroelectric memory, and method for manufacturing semiconductor device
05/05/2009US7528487 Semiconductor device having insulating material dispersed with conductive particles which establish electrical connection by penetrating to both copper conductive layer and land of wiring board
05/05/2009US7528486 Anisotropic conductive film and bump, and packaging structure of semiconductor having the same
05/05/2009US7528476 Semiconductor device, method for manufacturing semiconductor device, circuit board, and electronic instrument
05/05/2009US7528465 Integrated circuit on corrugated substrate
05/05/2009US7528463 Semiconductor on insulator structure