| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/16/2009 | US20090096064 Method of forming poly pattern in r-string of lcd drive ic and structure of the same |
| 04/16/2009 | US20090096063 Semiconductor apparatus with decoupling capacitor |
| 04/16/2009 | US20090096062 Stack capacitor in semiconductor device and method for fabricating the same |
| 04/16/2009 | US20090096061 Semiconductor device having high frequency wiring and dummy metal layer at multilayer wiring structure |
| 04/16/2009 | US20090096060 Antifuse structures, antifuse array structures, methods of manufacturing the same |
| 04/16/2009 | US20090096059 Fuse structure including monocrystalline semiconductor material layer and gap |
| 04/16/2009 | US20090096058 Pinched poly fuse |
| 04/16/2009 | US20090096057 Semiconductor device and method for fabricating the same |
| 04/16/2009 | US20090096054 Semiconductor device and method for manufacturing the same |
| 04/16/2009 | US20090096053 Schottky Barrier Semiconductor Device and Method for Manufacturing the Same |
| 04/16/2009 | US20090096045 Magnetoresistive device and nonvolatile magnetic memory equipped with the same |
| 04/16/2009 | US20090096042 Magnetic element having reduced current density |
| 04/16/2009 | US20090096041 Semiconductor device |
| 04/16/2009 | US20090096040 Sensor geometry for improved package stress isolation |
| 04/16/2009 | US20090096039 High-voltage device and manufacturing method of top layer in high-voltage device |
| 04/16/2009 | US20090096037 Semiconductor device having recessed field region and fabrication method thereof |
| 04/16/2009 | US20090096034 Partially and Fully Silicided Gate Stacks |
| 04/16/2009 | US20090096033 ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS |
| 04/16/2009 | US20090096026 Method of fabricating high voltage fully depleted soi transistor and structure thereof |
| 04/16/2009 | US20090096023 Method for manufacturing semiconductor device |
| 04/16/2009 | US20090096022 Lateral diffused metal oxide semiconductor device |
| 04/16/2009 | US20090096021 Semiconductor device having deep trench charge compensation regions and method |
| 04/16/2009 | US20090096020 Semiconductror device and manufacturing method thereof |
| 04/16/2009 | US20090096019 Mosgated power semiconductor device with source field electrode |
| 04/16/2009 | US20090096018 Semiconductor device |
| 04/16/2009 | US20090096017 Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same |
| 04/16/2009 | US20090096016 Method of manufacturing a sonos device |
| 04/16/2009 | US20090096015 Nonvolatile semiconductor memory device and manufacturing method therefor |
| 04/16/2009 | US20090096014 Nonvolatile memory devices that include an insulating film with nanocrystals embedded therein and methods of manufacturing the same |
| 04/16/2009 | US20090096013 Non-volatile memory devices with charge storage regions |
| 04/16/2009 | US20090096012 Flash memory device and method of fabricating the same |
| 04/16/2009 | US20090096011 Non-Volatile Memory Device Having Asymmetric Source/Drain Junction and Method for Fabricating the Same |
| 04/16/2009 | US20090096010 Nonvolatile memory device and fabrication method thereof |
| 04/16/2009 | US20090096009 Nonvolatile memories which combine a dielectric, charge-trapping layer with a floating gate |
| 04/16/2009 | US20090096008 Nonvolatile memory device and method of fabricating the same |
| 04/16/2009 | US20090096007 Semiconductor memory device and method of manufacturing the same |
| 04/16/2009 | US20090096006 Nonvolatile semiconductor storage apparatus and method for manufacturing the same |
| 04/16/2009 | US20090096004 Semiconductor storage device and manufacturing method thereof |
| 04/16/2009 | US20090096002 System and Method for Source/Drain Contact Processing |
| 04/16/2009 | US20090096001 Integrated Circuit and Method of Manufacturing the Same |
| 04/16/2009 | US20090096000 Dram cells with vertical transistors |
| 04/16/2009 | US20090095999 Semiconductor device and method of fabricating the same |
| 04/16/2009 | US20090095998 Deep trench capacitor and method |
| 04/16/2009 | US20090095997 Epitaxial silicon growth |
| 04/16/2009 | US20090095996 Semiconductor device |
| 04/16/2009 | US20090095995 Semiconductor device and a method of manufacturing the same |
| 04/16/2009 | US20090095991 Method of forming strained mosfet devices using phase transformable materials |
| 04/16/2009 | US20090095990 Metal-oxide-semiconductor transistor and method of forming the same |
| 04/16/2009 | US20090095989 Multi-finger transistors including partially enclosing conductive lines |
| 04/16/2009 | US20090095988 Transistor Design and Layout for Performance Improvement with Strain |
| 04/16/2009 | US20090095987 Transistor Design and Layout for Performance Improvement with Strain |
| 04/16/2009 | US20090095984 Dielectric interface for group iii-v semiconductor device |
| 04/16/2009 | US20090095983 Semiconductor device and method of making same |
| 04/16/2009 | US20090095982 Semiconductor device and method of manufacturing the same |
| 04/16/2009 | US20090095980 Reducing Resistance in Source and Drain Regions of FinFETs |
| 04/16/2009 | US20090095979 Power Module |
| 04/16/2009 | US20090095978 Low capacitance over-voltage tage protection thyristor device |
| 04/16/2009 | US20090095977 Vertical semiconductor device |
| 04/16/2009 | US20090095963 Bare die semiconductor device configured for lamination |
| 04/16/2009 | US20090095962 Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus |
| 04/16/2009 | US20090095958 Thin film transistor array and displaying apparatus |
| 04/16/2009 | US20090095957 Display device and method of manufacturing display device |
| 04/16/2009 | US20090095956 Single-crystal silicon substrate, soi substrate, semiconductor device, display device, and manufacturing method of semiconductor device |
| 04/16/2009 | DE202008015288U1 Halbleiterstruktur Semiconductor structure |
| 04/16/2009 | DE102008050298A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation |
| 04/16/2009 | DE102008047998A1 Halbleitervorrichtung mit strukturiertem Stromausbreitungsbereich und Verfahren Semiconductor device with structured current spread region and methods |
| 04/16/2009 | DE102008047159A1 Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung A process for producing a silicon carbide semiconductor device |
| 04/16/2009 | DE102008045488A1 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same |
| 04/16/2009 | DE102008038552A1 Vertikaldiode unter Verwendung von Silizium, ausgebildet durch selektives epitaxiales Aufwachsen Vertical diode using silicon, is formed by selective epitaxial growth |
| 04/16/2009 | DE102008037357A1 Halbleitersubstrat aus Siliziumkarbid und Halbleiterelement mit einem solchen Substrat A semiconductor substrate made of silicon carbide and semiconductor element having such a substrate |
| 04/16/2009 | DE102008032547A1 Grabenisoliertes Gate-MOS-Halbleiterbauelement Grave Insulated gate MOS semiconductor device |
| 04/16/2009 | DE102007048332A1 Verbund aus mindestens zwei Halbleitersubstraten sowie Herstellungsverfahren Composite of at least two semiconductor substrates and manufacturing method |
| 04/16/2009 | DE102007030054B4 Transistor mit reduziertem Gatewiderstand und verbesserter Verspannungsübertragungseffizienz und Verfahren zur Herstellung desselben Of the same transistor with reduced gate resistance and improved stress transfer efficiency and methods for preparing |
| 04/16/2009 | DE102006046363B4 Verfahren zum Verringern von Kristalldefekten in Transistoren mit wieder aufgewachsenen flachen Übergängen durch geeignetes Auswählen von Kristallorientierungen A method for reducing crystal defects in transistors with shallow junctions again grown by suitably selecting crystal orientations |
| 04/16/2009 | DE102005027447B4 Verfahren zur Erhöhung der Randsperrfähigkeit eines Leistungshalbleiterbauelements A method of increasing the edge blocking capability of a power semiconductor component |
| 04/16/2009 | DE102004037450B4 Verfahren zum Betrieb eines Schalt-Bauelements Method for operating a switching device |
| 04/16/2009 | DE102004010676B4 Verfahren zur Herstellung eines Halbleiterwafers A process for producing a semiconductor wafer |
| 04/16/2009 | DE10112530B4 Drucksensor Pressure sensor |
| 04/16/2009 | DE10000754B4 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation |
| 04/15/2009 | EP2048714A1 Current amplifying device and current amplifying method |
| 04/15/2009 | EP2048709A2 Non-volatile memory device, method of operating the same, and method of fabricating the same |
| 04/15/2009 | EP2048171A1 Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol |
| 04/15/2009 | EP2047514A1 Molybdenum barrier metal for sic schottky diode and process of manufacture |
| 04/15/2009 | EP2047513A1 Flexible substrate with electronic devices formed thereon |
| 04/15/2009 | EP2047512A1 Organic transistor and active matrix display |
| 04/15/2009 | EP2047511A2 Method of manufacturing a semiconductor device and a device manufactured by the method |
| 04/15/2009 | EP2047502A2 Nanocrystal formation |
| 04/15/2009 | EP1846947A4 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow |
| 04/15/2009 | EP1779440A4 Metal-insulator varactor devices |
| 04/15/2009 | EP1723676A4 Nano-enabled memory devices and anisotropic charge carrying arrays |
| 04/15/2009 | EP1595289A4 Thermal interconnect systems methods of production and uses thereof |
| 04/15/2009 | EP1304746B1 Method of manufacturing a thin-film transistor |
| 04/15/2009 | EP1129488B1 Method for producing thin-film transistors |
| 04/15/2009 | EP1100128B1 Method of manufacture of a semiconductor device |
| 04/15/2009 | CN201222500Y High pressure-resistant constant flow source device |
| 04/15/2009 | CN101410988A Trench widening without merging |
| 04/15/2009 | CN101410987A Trench-gate semiconductor device and method of fabrication thereof |
| 04/15/2009 | CN101410986A Floating body transistor constructions, semiconductor constructions, and methods of forming semiconductor constructions |
| 04/15/2009 | CN101410985A High efficiency and/or high power density wide bandgap transistors |
| 04/15/2009 | CN101410984A Abrupt metal-insulator transition device with parallel conducting layers |