Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2009
04/16/2009US20090096064 Method of forming poly pattern in r-string of lcd drive ic and structure of the same
04/16/2009US20090096063 Semiconductor apparatus with decoupling capacitor
04/16/2009US20090096062 Stack capacitor in semiconductor device and method for fabricating the same
04/16/2009US20090096061 Semiconductor device having high frequency wiring and dummy metal layer at multilayer wiring structure
04/16/2009US20090096060 Antifuse structures, antifuse array structures, methods of manufacturing the same
04/16/2009US20090096059 Fuse structure including monocrystalline semiconductor material layer and gap
04/16/2009US20090096058 Pinched poly fuse
04/16/2009US20090096057 Semiconductor device and method for fabricating the same
04/16/2009US20090096054 Semiconductor device and method for manufacturing the same
04/16/2009US20090096053 Schottky Barrier Semiconductor Device and Method for Manufacturing the Same
04/16/2009US20090096045 Magnetoresistive device and nonvolatile magnetic memory equipped with the same
04/16/2009US20090096042 Magnetic element having reduced current density
04/16/2009US20090096041 Semiconductor device
04/16/2009US20090096040 Sensor geometry for improved package stress isolation
04/16/2009US20090096039 High-voltage device and manufacturing method of top layer in high-voltage device
04/16/2009US20090096037 Semiconductor device having recessed field region and fabrication method thereof
04/16/2009US20090096034 Partially and Fully Silicided Gate Stacks
04/16/2009US20090096033 ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS
04/16/2009US20090096026 Method of fabricating high voltage fully depleted soi transistor and structure thereof
04/16/2009US20090096023 Method for manufacturing semiconductor device
04/16/2009US20090096022 Lateral diffused metal oxide semiconductor device
04/16/2009US20090096021 Semiconductor device having deep trench charge compensation regions and method
04/16/2009US20090096020 Semiconductror device and manufacturing method thereof
04/16/2009US20090096019 Mosgated power semiconductor device with source field electrode
04/16/2009US20090096018 Semiconductor device
04/16/2009US20090096017 Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
04/16/2009US20090096016 Method of manufacturing a sonos device
04/16/2009US20090096015 Nonvolatile semiconductor memory device and manufacturing method therefor
04/16/2009US20090096014 Nonvolatile memory devices that include an insulating film with nanocrystals embedded therein and methods of manufacturing the same
04/16/2009US20090096013 Non-volatile memory devices with charge storage regions
04/16/2009US20090096012 Flash memory device and method of fabricating the same
04/16/2009US20090096011 Non-Volatile Memory Device Having Asymmetric Source/Drain Junction and Method for Fabricating the Same
04/16/2009US20090096010 Nonvolatile memory device and fabrication method thereof
04/16/2009US20090096009 Nonvolatile memories which combine a dielectric, charge-trapping layer with a floating gate
04/16/2009US20090096008 Nonvolatile memory device and method of fabricating the same
04/16/2009US20090096007 Semiconductor memory device and method of manufacturing the same
04/16/2009US20090096006 Nonvolatile semiconductor storage apparatus and method for manufacturing the same
04/16/2009US20090096004 Semiconductor storage device and manufacturing method thereof
04/16/2009US20090096002 System and Method for Source/Drain Contact Processing
04/16/2009US20090096001 Integrated Circuit and Method of Manufacturing the Same
04/16/2009US20090096000 Dram cells with vertical transistors
04/16/2009US20090095999 Semiconductor device and method of fabricating the same
04/16/2009US20090095998 Deep trench capacitor and method
04/16/2009US20090095997 Epitaxial silicon growth
04/16/2009US20090095996 Semiconductor device
04/16/2009US20090095995 Semiconductor device and a method of manufacturing the same
04/16/2009US20090095991 Method of forming strained mosfet devices using phase transformable materials
04/16/2009US20090095990 Metal-oxide-semiconductor transistor and method of forming the same
04/16/2009US20090095989 Multi-finger transistors including partially enclosing conductive lines
04/16/2009US20090095988 Transistor Design and Layout for Performance Improvement with Strain
04/16/2009US20090095987 Transistor Design and Layout for Performance Improvement with Strain
04/16/2009US20090095984 Dielectric interface for group iii-v semiconductor device
04/16/2009US20090095983 Semiconductor device and method of making same
04/16/2009US20090095982 Semiconductor device and method of manufacturing the same
04/16/2009US20090095980 Reducing Resistance in Source and Drain Regions of FinFETs
04/16/2009US20090095979 Power Module
04/16/2009US20090095978 Low capacitance over-voltage tage protection thyristor device
04/16/2009US20090095977 Vertical semiconductor device
04/16/2009US20090095963 Bare die semiconductor device configured for lamination
04/16/2009US20090095962 Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus
04/16/2009US20090095958 Thin film transistor array and displaying apparatus
04/16/2009US20090095957 Display device and method of manufacturing display device
04/16/2009US20090095956 Single-crystal silicon substrate, soi substrate, semiconductor device, display device, and manufacturing method of semiconductor device
04/16/2009DE202008015288U1 Halbleiterstruktur Semiconductor structure
04/16/2009DE102008050298A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
04/16/2009DE102008047998A1 Halbleitervorrichtung mit strukturiertem Stromausbreitungsbereich und Verfahren Semiconductor device with structured current spread region and methods
04/16/2009DE102008047159A1 Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung A process for producing a silicon carbide semiconductor device
04/16/2009DE102008045488A1 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
04/16/2009DE102008038552A1 Vertikaldiode unter Verwendung von Silizium, ausgebildet durch selektives epitaxiales Aufwachsen Vertical diode using silicon, is formed by selective epitaxial growth
04/16/2009DE102008037357A1 Halbleitersubstrat aus Siliziumkarbid und Halbleiterelement mit einem solchen Substrat A semiconductor substrate made of silicon carbide and semiconductor element having such a substrate
04/16/2009DE102008032547A1 Grabenisoliertes Gate-MOS-Halbleiterbauelement Grave Insulated gate MOS semiconductor device
04/16/2009DE102007048332A1 Verbund aus mindestens zwei Halbleitersubstraten sowie Herstellungsverfahren Composite of at least two semiconductor substrates and manufacturing method
04/16/2009DE102007030054B4 Transistor mit reduziertem Gatewiderstand und verbesserter Verspannungsübertragungseffizienz und Verfahren zur Herstellung desselben Of the same transistor with reduced gate resistance and improved stress transfer efficiency and methods for preparing
04/16/2009DE102006046363B4 Verfahren zum Verringern von Kristalldefekten in Transistoren mit wieder aufgewachsenen flachen Übergängen durch geeignetes Auswählen von Kristallorientierungen A method for reducing crystal defects in transistors with shallow junctions again grown by suitably selecting crystal orientations
04/16/2009DE102005027447B4 Verfahren zur Erhöhung der Randsperrfähigkeit eines Leistungshalbleiterbauelements A method of increasing the edge blocking capability of a power semiconductor component
04/16/2009DE102004037450B4 Verfahren zum Betrieb eines Schalt-Bauelements Method for operating a switching device
04/16/2009DE102004010676B4 Verfahren zur Herstellung eines Halbleiterwafers A process for producing a semiconductor wafer
04/16/2009DE10112530B4 Drucksensor Pressure sensor
04/16/2009DE10000754B4 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
04/15/2009EP2048714A1 Current amplifying device and current amplifying method
04/15/2009EP2048709A2 Non-volatile memory device, method of operating the same, and method of fabricating the same
04/15/2009EP2048171A1 Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol
04/15/2009EP2047514A1 Molybdenum barrier metal for sic schottky diode and process of manufacture
04/15/2009EP2047513A1 Flexible substrate with electronic devices formed thereon
04/15/2009EP2047512A1 Organic transistor and active matrix display
04/15/2009EP2047511A2 Method of manufacturing a semiconductor device and a device manufactured by the method
04/15/2009EP2047502A2 Nanocrystal formation
04/15/2009EP1846947A4 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
04/15/2009EP1779440A4 Metal-insulator varactor devices
04/15/2009EP1723676A4 Nano-enabled memory devices and anisotropic charge carrying arrays
04/15/2009EP1595289A4 Thermal interconnect systems methods of production and uses thereof
04/15/2009EP1304746B1 Method of manufacturing a thin-film transistor
04/15/2009EP1129488B1 Method for producing thin-film transistors
04/15/2009EP1100128B1 Method of manufacture of a semiconductor device
04/15/2009CN201222500Y High pressure-resistant constant flow source device
04/15/2009CN101410988A Trench widening without merging
04/15/2009CN101410987A Trench-gate semiconductor device and method of fabrication thereof
04/15/2009CN101410986A Floating body transistor constructions, semiconductor constructions, and methods of forming semiconductor constructions
04/15/2009CN101410985A High efficiency and/or high power density wide bandgap transistors
04/15/2009CN101410984A Abrupt metal-insulator transition device with parallel conducting layers