| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/14/2009 | US20090121297 Gate electrode having a capping layer |
| 05/14/2009 | US20090121293 Semiconductor device and method for manufacturing same |
| 05/14/2009 | US20090121292 Fabrication of local damascene finFETs using contact type nitride damascene mask |
| 05/14/2009 | US20090121289 Field effect transistor with a heterostructure and associated production method |
| 05/14/2009 | US20090121288 Multiple gate field effect transistor structure and method for fabricating same |
| 05/14/2009 | US20090121286 Integrated Circuit Comprising a Field Effect Transistor and Method of Fabricating the Same |
| 05/14/2009 | US20090121285 Semiconductor device |
| 05/14/2009 | US20090121284 Semiconductor device and method for manufacturing the same |
| 05/14/2009 | US20090121283 Semiconductor device and fabrication method of the same |
| 05/14/2009 | US20090121282 Non-Volatile Memory Device and Method for Manufacturing the Same |
| 05/14/2009 | US20090121281 Semiconductor memory device |
| 05/14/2009 | US20090121280 Semiconductor devices, methods of forming the semiconductor devices and methods of operating the semiconductor devices |
| 05/14/2009 | US20090121279 Semiconductor device and method of manufacturing the same |
| 05/14/2009 | US20090121278 Structure and fabrication method of flash memory |
| 05/14/2009 | US20090121276 Nonvolatile memory devices with recessed word lines |
| 05/14/2009 | US20090121275 Non-Volatile Memory Devices Including Blocking and Interface Patterns Between Charge Storage Patterns and Control Electrodes and Related Methods |
| 05/14/2009 | US20090121273 Low-voltage memory having flexible gate charging element |
| 05/14/2009 | US20090121272 Fabrication method of nanoparticles by chemical curing |
| 05/14/2009 | US20090121271 Vertical-type non-volatile memory devices |
| 05/14/2009 | US20090121270 Design structure for a trench capacitor |
| 05/14/2009 | US20090121267 Spin field effect transistor using half metal and method of manufacturing the same |
| 05/14/2009 | US20090121263 Semiconductor device and its manufacturing method |
| 05/14/2009 | US20090121262 Semiconductor device capable of improving contact resistance and method for manufacturing the same |
| 05/14/2009 | US20090121261 STRUCTURE AND METHOD FOR COMPACT LONG-CHANNEL FETs |
| 05/14/2009 | US20090121260 Double-sided integrated circuit chips |
| 05/14/2009 | US20090121258 Field effect transistor containing a wide band gap semiconductor material in a drain |
| 05/14/2009 | US20090121257 Semiconductor superjunction structure |
| 05/14/2009 | US20090121254 Method for Modification of Built In Potential of Diodes |
| 05/14/2009 | US20090121240 Nitride Semiconductor Device and Method for Manufacturing the Same |
| 05/14/2009 | US20090121235 Method for fabricating a semiconductor device |
| 05/14/2009 | US20090121231 Thin film transistors, method of fabricating the same, and organic light-emitting diode device using the same |
| 05/14/2009 | US20090121228 Array substrate and method of manufacturing the same |
| 05/14/2009 | US20090121227 Method of manufacturing thin film transistor array substrate and display device |
| 05/14/2009 | US20090121224 Dual gate of semiconductor device capable of forming a layer doped in high concentration over a recessed portion of substrate for forming dual gate with recess channel structure and method for manufacturing the same |
| 05/14/2009 | US20090121223 Semiconductor device |
| 05/14/2009 | US20090121213 Semiconductor device with tunable energy band gap |
| 05/14/2009 | US20090121211 Solution-Based Deposition Process for Metal Chalcogenides |
| 05/14/2009 | DE112007001578T5 Lateraler Fet mit Trench-Gate mit direktem Source-Drain-Strompfad Lateral trench-gate FET with direct source-drain current path |
| 05/14/2009 | DE10313578B4 Magnetfeldsensor-Vorrichtung zur direkten Erzeugung digitaler Sensordaten von einem Magnetfeldsensor-Element Magnetic field sensor device for the direct generation of digital sensor data from a magnetic field sensor element |
| 05/14/2009 | DE10209204B4 Elektronisches Bauteil mit einem Stapel aus Halbleiterchips und Verfahren zur Herstellung desselben The same electronic component having a stack of semiconductor chips and processes for making |
| 05/14/2009 | DE102008056389A1 Halbleitervorrichtung mit Transistor hoher Durchbruchspannung A semiconductor device having high breakdown voltage transistor |
| 05/14/2009 | DE102008056388A1 Halbleitervorrichtung und die Halbleitervorrichtung aufweisende Inverterschaltung Semiconductor device and the semiconductor device having the inverter circuit |
| 05/14/2009 | DE102008038170A1 Verfahren zum Fertigen einer rippenförmigen Halbleiterstruktur und eine rippenförmige Halbleiterstruktur A method of manufacturing a fin-shaped semiconductor structure and a ridge-shaped semiconductor structure |
| 05/14/2009 | DE102007054414A1 Electrical condenser has schottky diode with high specific capacity, maximum operating temperature and particularly small electron spin resonance |
| 05/14/2009 | DE102007052820A1 Method for producing isolation trench in semiconductor substrate, involves etching trench in substrate at upper side of substrate made of semiconductor material |
| 05/14/2009 | DE102007033918B4 Halbleiterbauelement und Herstellungsverfahren davon A semiconductor device and manufacturing method thereof |
| 05/14/2009 | DE102005061210B4 Halbleiterbauelement mit einem vorderseitigen und einem rückseitigen pn-Übergang sowie zugehöriges Herstellungsverfahren A semiconductor device having a front and a rear-side pn junction and associated production method |
| 05/13/2009 | EP2058862A1 Field-effect transistor and method for producing a field-effect transistor. |
| 05/13/2009 | EP2058854A2 A semiconductor device |
| 05/13/2009 | EP2058848A1 Lateral junction field effect transistor |
| 05/13/2009 | EP2058847A1 Method of manufacturing nanowires parallel to their support substrate |
| 05/13/2009 | EP2057687A1 Bare microelectronic chip provided with a recess forming a housing for a wire element constituting a flexible mechanical support, fabrication process and microstructure |
| 05/13/2009 | EP2057686A2 High operation temperature split-off band infrared detectors |
| 05/13/2009 | EP2057671A1 Jfet with built in back gate in either soi or bulk silicon |
| 05/13/2009 | EP2057633A2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| 05/13/2009 | EP1902471A4 Source transistor configurations and control methods |
| 05/13/2009 | EP1779436A4 Hybrid substrate technology for high-mobility planar and multiple-gate mosfets |
| 05/13/2009 | EP1592551A4 Nanofabric articles and methods of making the same |
| 05/13/2009 | EP1514110A4 An apparatus and method for two-dimensional electron gas actuation and transduction for gaas nems |
| 05/13/2009 | EP1474542B1 Method of CIRCUIT FABRICATION using an aperture mask |
| 05/13/2009 | EP1422684B1 Self scanning flat display |
| 05/13/2009 | CN101432886A An SOI transistor having a reduced body potential and a method of forming the same |
| 05/13/2009 | CN101432885A Front side electrical contact for photodetector array and method of making same |
| 05/13/2009 | CN101432884A Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof |
| 05/13/2009 | CN101432883A Transistor element, its manufacturing method, light emitting element, and display |
| 05/13/2009 | CN101432882A A transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility |
| 05/13/2009 | CN101432881A Noise isolation between circuit blocks in an integrated circuit chip |
| 05/13/2009 | CN101432880A Semiconductor device with improved contact fuse |
| 05/13/2009 | CN101432869A Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having the semiconductor device |
| 05/13/2009 | CN101432859A An SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same |
| 05/13/2009 | CN101432852A Non-volatile memory device |
| 05/13/2009 | CN101431330A NOR gate logic circuit and its forming method |
| 05/13/2009 | CN101431329A OR gate logic circuit and its forming method |
| 05/13/2009 | CN101431328A NOT gate logic circuit and its forming method |
| 05/13/2009 | CN101431146A Wiring board and method for manufacturing the same |
| 05/13/2009 | CN101431106A Plane nano electromagnetic radiator structure based on negative differential mobility |
| 05/13/2009 | CN101431105A Nonvolatile memory device having charge trapping layer and method for fabricating the same |
| 05/13/2009 | CN101431104A Double-edge anti-integral dose radiation reinforced layout structure |
| 05/13/2009 | CN101431103A Semiconductor device and manufacturing method thereof |
| 05/13/2009 | CN101431102A Semiconductor device with high-breakdown-voltage transistor |
| 05/13/2009 | CN101431101A Method for fabricating a semiconductor device |
| 05/13/2009 | CN101431100A Vertical transistor and method for forming the same |
| 05/13/2009 | CN101431099A Semiconductor element |
| 05/13/2009 | CN101431098A Transconductance control structure of insulated gate bipolar transistor |
| 05/13/2009 | CN101431097A Thin layer SOILIGBT device |
| 05/13/2009 | CN101431096A SOILIGBT device |
| 05/13/2009 | CN101431082A Semiconductor device and its manufacturing method |
| 05/13/2009 | CN101431077A Semiconductor device having vertical and horizontal type gates and method for fabricating the same |
| 05/13/2009 | CN101431076A Semiconductor apparatus and method for manufacturing the same |
| 05/13/2009 | CN101431073A Zener integrated circuit structure and manufacturing method thereof |
| 05/13/2009 | CN101431028A Enhancement type back grid zinc oxide nano wire field effect transistor and method for producing the same |
| 05/13/2009 | CN101431027A High voltage semiconductor device and method for manufacturing the same |
| 05/13/2009 | CN101431016A Process for producing polycrystalline semiconductor thin film |
| 05/13/2009 | CN100488231C Signal processing device and display device |
| 05/13/2009 | CN100487939C Organic field effect tube using single molecular layer as oriented transfer layer and its preparing method |
| 05/13/2009 | CN100487922C Gallium arsenide hbt having increased performance and method for its fabrication |
| 05/13/2009 | CN100487921C Display device and a method for manufacturing the same |
| 05/13/2009 | CN100487920C Thin film transistor (TFT) and flat panel display including the tft and their methods of manufacture |
| 05/13/2009 | CN100487919C Thin film transistor and process for fabricating the same |
| 05/13/2009 | CN100487918C TFT, display device having the same and method of manufacturing donor sheet |