Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2009
05/21/2009US20090126460 Gas-Sensing Semiconductor Devices
05/20/2009EP2061087A2 Thin film field effect transistor and display using the same
05/20/2009EP2061086A2 Thin film field effect transistor and display using the same
05/20/2009EP2061085A2 Trench gate MOSFET and manufacturing method thereof
05/20/2009EP2061084A1 Reverse-conducting insulated gate bipolar transistor and corresponding manufacturing method
05/20/2009EP2061075A1 Semiconductor device
05/20/2009EP2060654A1 Aperture masks for circuit fabrication
05/20/2009EP2006894A9 Semiconductor device and process for producing the same
05/20/2009EP1999792A4 Shielded gate trench(sgt) mosfet cells implemented with a schottky source contact
05/20/2009EP1719162A4 Method of making a semiconductor device using treated photoresist
05/20/2009EP1459390B1 Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating them
05/20/2009DE102008051259A1 Leistungshalbleiterbauelement Power semiconductor component
05/20/2009DE102007052053A1 Eine Zugverformungsquelle unter Anwendung von Silizium/Germanium-Material in global verformtem Silizium A Zugverformungsquelle using silicon / germanium material in globally strained silicon
05/20/2009DE102007026745B4 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
05/20/2009CN201243018Y PNP type high-frequency high-speed low-voltage-drop high-gain power transistor for automobile electron
05/20/2009CN101438423A Low optical loss electrode structures for leds
05/20/2009CN101438415A Semiconductor device including a floating gate memory cell with a superlattice channel and associated methods
05/20/2009CN101438414A Isolation structure for semiconductor device with multiple terminals
05/20/2009CN101438413A Spintronic devices with constrained spintronic dopant and associated methods
05/20/2009CN101438412A Semiconductor device having a semiconductor-on-insulator configuration and a superlattice and associated methods
05/20/2009CN101438404A Structure and method for creating reliable via contacts for interconnect applications
05/20/2009CN101438400A Dynamic memory cell structures
05/20/2009CN101438337A TFT substrate, display panel and display device provided with such TFT substrate, and TFT substrate manufacturing method
05/20/2009CN101436614A Antimonous schottky diode and self-aligning manufacturing method
05/20/2009CN101436613A Transparent thin-film transistor and manufacturing method of the transistor
05/20/2009CN101436612A Field effect transistor and method for forming the same
05/20/2009CN101436611A Sensitive triggering unidirection silicon controlled
05/20/2009CN101436601A Array substrate of thin-film transistor
05/20/2009CN101436600A Semiconductor device and method for manufacturing the same, and electric device
05/20/2009CN101436599A Semiconductor device and method of manufacturing the same
05/20/2009CN101436595A Memory device, memory and method for processing such memory
05/20/2009CN101436533A Modulating the stress of poly-crystaline silicon films and surrounding layers through the use of dopants and multi-layer silicon films with controlled crystal structure
05/20/2009CN100490205C Method for depositing metal sulfur family film and method for preparing field effect transistor
05/20/2009CN100490190C Group-III nitride semiconductor device
05/20/2009CN100490182C Preparation method of fin channel dual-bar multi-functional field effect transistor
05/20/2009CN100490181C Full exhaust Air_A1N_SOI MOSFETs part structure and its making method
05/20/2009CN100490180C Vertical field effect transistor and method for fabricating the same
05/20/2009CN100490179C Thin film transistor and its producing method
05/20/2009CN100490178C Cellular phone and digital camera
05/20/2009CN100490177C Semiconductor device, method of fabricating the same, and patterning mask utilizied by the method
05/20/2009CN100490176C Semiconductor device and method for manufacturing it
05/20/2009CN100490175C High-voltage metaloxide semiconductor transistor and producing method thereof
05/20/2009CN100490174C Semiconductor device and method of manufacturing the same
05/20/2009CN100490173C Thin-layer chemical transistor and making method
05/20/2009CN100490172C Groove grid type semiconductor device
05/20/2009CN100490171C Transistor applying grid dielectric layer
05/20/2009CN100490159C Method for manufacturing thin-film transistor
05/20/2009CN100490155C Semiconductor device and method for forming a semiconductor structure
05/20/2009CN100490153C Semiconductor device and method of manufacturing the same
05/20/2009CN100490152C Non-volatile memory cell and related operation method
05/20/2009CN100490143C Non-gate-controlled diode, electrostatic discharge protection circuit and manufacture method thereof
05/20/2009CN100490141C 半导体器件 Semiconductor devices
05/20/2009CN100490116C A semiconductor device and a method of manufacturing thereof
05/20/2009CN100490101C Thin film transistor, pixel structure and method of manufacture thereof
05/20/2009CN100490098C Semiconductor structure and method for forming N type MOS transistor
05/20/2009CN100490096C Semiconductor device and manufacturing method of the same
05/20/2009CN100490095C Semiconductor and method for making same
05/20/2009CN100490094C Ion implantation in use for reducing I/O NMOS inverse short-channel effect
05/20/2009CN100490085C Dielectric block material including metal compound particle and its forming method
05/20/2009CN100490081C Grid dielectric layer and its formation method
05/20/2009CN100490079C FET gate structure with metal gate electrode and silicide contact
05/20/2009CN100490078C GaN-based III-V group compound semiconductor device and p-type electrode for the same
05/20/2009CN100490077C Silicon carbide semiconductor device and process for producing the same
05/20/2009CN100490074C Method for producing polycrystal silicon thin film and method for producing transistor using the same
05/20/2009CN100490055C Semiconductor device, method for manufacturing the same, liquid crystal television and EL television
05/20/2009CN100490035C Electrolytic capacitor and its producing method
05/20/2009CN100489633C Thin film transistor array substrate
05/20/2009CN100489632C Film electric crystal array and pixel structure
05/20/2009CN100489630C Conductive convex block and display panel
05/20/2009CN100489629C Wiring structure and electrooptical device manufacturing method, electrooptical device and electronic apparatus
05/19/2009USRE40712 High-breakdown-voltage semiconductor apparatus
05/19/2009US7536166 Monolithically integrated circuit
05/19/2009US7535621 Aluminum fluoride films for microelectromechanical system applications
05/19/2009US7535541 Spacers for display devices
05/19/2009US7535536 Display device
05/19/2009US7535535 Manufacturing method of display device
05/19/2009US7535533 Plane switching mode liquid crystal display device having improved contrast ratio
05/19/2009US7535114 Integrated circuit devices including compliant material under bond pads and methods of fabrication
05/19/2009US7535109 Die assembly having electrical interconnect
05/19/2009US7535108 Electronic component including reinforcing member
05/19/2009US7535106 Wiring glass substrate for connecting a semiconductor chip to a printed wiring substrate and a semiconductor module having the wiring glass substrate
05/19/2009US7535088 Secure-digital (SD) flash card with slanted asymmetric circuit board
05/19/2009US7535085 Semiconductor package having improved adhesiveness and ground bonding
05/19/2009US7535081 Metal nanoline process and applications on growth of aligned nanostructure thereof
05/19/2009US7535080 Reducing parasitic mutual capacitances
05/19/2009US7535079 Semiconductor device comprising passive components
05/19/2009US7535077 Method for manufacturing a semiconductor device including a shallow trench isolation structure
05/19/2009US7535076 Power semiconductor device
05/19/2009US7535075 Semiconductor device
05/19/2009US7535074 Monolithically integrated vertical pin photodiode used in biCMOS technology
05/19/2009US7535069 Magnetic tunnel junction with enhanced magnetic switching characteristics
05/19/2009US7535068 Self-assembly microstructure with polyimide thin-film elastic joint
05/19/2009US7535067 Transistor in semiconductor devices and method of fabricating the same
05/19/2009US7535066 Gate structure and method
05/19/2009US7535065 Thin film transistor device utilizing transistors of differing material characteristics
05/19/2009US7535064 Semiconductor device having a fin and method of manufacturing the same
05/19/2009US7535063 ESD protection device structure
05/19/2009US7535061 Fin-field effect transistors (Fin-FETs) having protection layers
05/19/2009US7535060 Charge storage structure formation in transistor with vertical channel region
05/19/2009US7535059 Semiconductor device and manufacturing method of the semiconductor device