| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/02/2009 | WO2009041365A1 Organic transistor and process for producing the same |
| 04/02/2009 | WO2009041254A1 Organic thin film transistor |
| 04/02/2009 | WO2009041119A1 Antenna device, display device substrate, liquid crystal display unit, display system, method for manufacturing antenna device and method for manufacturing display device substrate |
| 04/02/2009 | WO2009040939A1 Negative resistor element using magnetoresistive effect |
| 04/02/2009 | WO2009040654A1 Multi-directional trenching of a plurality of dies in manufacturing superjunction devices |
| 04/02/2009 | WO2009040650A1 Multi-directional trenching of a die in manufacturing superjunction devices |
| 04/02/2009 | WO2009040375A1 Electronic component having switching properties |
| 04/02/2009 | WO2009040328A1 Process for forming a wire portion in an integrated electronic circuit |
| 04/02/2009 | WO2009040279A1 Semiconductor device and method for the production thereof |
| 04/02/2009 | WO2009040265A1 Semiconductor device |
| 04/02/2009 | WO2009007943A4 Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor |
| 04/02/2009 | WO2007112088A3 Hyperspectral imaging device |
| 04/02/2009 | WO2007014036A3 Switch mode power amplifier using fet with field plate extension |
| 04/02/2009 | WO2006112976A3 Electrical component with fractional order impedance |
| 04/02/2009 | WO2006058034A3 Molecular self-assembly in substrate processing |
| 04/02/2009 | WO2005089440A3 Multiple dielectric finfet structure and method |
| 04/02/2009 | WO2005020648A3 Copper-faced modules, imprinted copper circuits, and their application to suptercomputers |
| 04/02/2009 | WO2004095532A3 A barrier layer for a processing element and a method of forming the same |
| 04/02/2009 | US20090087976 Conductive Spacers Extended Floating Gates |
| 04/02/2009 | US20090087971 Method for fabricating semiconductor devices with reduced junction diffusion |
| 04/02/2009 | US20090087630 Carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| 04/02/2009 | US20090086540 Method of operating non-volatile memory array |
| 04/02/2009 | US20090086521 Multiple antifuse memory cells and methods to form, program, and sense the same |
| 04/02/2009 | US20090086488 LED luminaire |
| 04/02/2009 | US20090085657 Compensation of field effect on polycrystalline resistors |
| 04/02/2009 | US20090085541 Semiconductor Device, Method for Fabricating the Same, and Transformer Circuit Using the Same |
| 04/02/2009 | US20090085201 Direct device attachment on dual-mode wirebond die |
| 04/02/2009 | US20090085176 Glass-based soi structures |
| 04/02/2009 | US20090085171 Oxide film formation method and image sensing apparatus |
| 04/02/2009 | US20090085169 Method of achieving atomically smooth sidewalls in deep trenches, and high aspect ratio silicon structure containing atomically smooth sidewalls |
| 04/02/2009 | US20090085167 Methods for Forming Metal-Germanide Layers and Devices Obtained Thereby |
| 04/02/2009 | US20090085166 Gallium nitride semiconductor device and manufacturing method thereof |
| 04/02/2009 | US20090085165 Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Manufacturing Group 3-5 Nitride Semiconductor Free-Standing Subtrate, and Semiconductor Element |
| 04/02/2009 | US20090085164 Wiring board |
| 04/02/2009 | US20090085163 Vertical diode using silicon formed by selective epitaxial growth |
| 04/02/2009 | US20090085162 Semiconductor device and integrated semiconductor circuit device |
| 04/02/2009 | US20090085161 Electronic components on trenched substrates and method of forming same |
| 04/02/2009 | US20090085160 Semiconductor Device Including Insulating Layer of Cubic System or Tetragonal System |
| 04/02/2009 | US20090085159 Semiconductor device and method for manufacturing the same |
| 04/02/2009 | US20090085158 Package with improved connection of a decoupling capacitor |
| 04/02/2009 | US20090085157 Manufacturing method for an integrated circuit, corresponding intermediate integrated circuit structure and corresponding integrated circuit |
| 04/02/2009 | US20090085156 Metal surface treatments for uniformly growing dielectric layers |
| 04/02/2009 | US20090085155 Method and apparatus for package-to-board impedance matching for high speed integrated circuits |
| 04/02/2009 | US20090085151 Semiconductor fuse structure and method |
| 04/02/2009 | US20090085150 Semiconductor device having silicon-on-insulator (SOI) structure and method of forming semiconductor device |
| 04/02/2009 | US20090085146 Semiconductor device |
| 04/02/2009 | US20090085145 Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure |
| 04/02/2009 | US20090085132 MRAM Cell Structure with a Blocking Layer for Avoiding Short Circuits |
| 04/02/2009 | US20090085131 Semiconductor device and manufacturing method thereof |
| 04/02/2009 | US20090085130 Semiconductor device |
| 04/02/2009 | US20090085129 Defect-free source/drain extensions for mosfets having germanium based channel regions |
| 04/02/2009 | US20090085128 Semiconductor device and method for manufacturing same |
| 04/02/2009 | US20090085126 Hybrid metal fully silicided (FUSI) gate |
| 04/02/2009 | US20090085125 MOS transistor and CMOS transistor having strained channel epi layer and methods of fabricating the transistors |
| 04/02/2009 | US20090085124 Semiconductor storage device and manufacturing method of the same |
| 04/02/2009 | US20090085123 Semiconductor device and method for fabricating the same |
| 04/02/2009 | US20090085122 Poly profile engineering to modulate spacer induced stress for device enhancement |
| 04/02/2009 | US20090085121 Condensed Memory Cell Structure Using a FinFET |
| 04/02/2009 | US20090085119 Double-gate transistor structure equipped with a multi-branch channel |
| 04/02/2009 | US20090085118 Semiconductor memory device |
| 04/02/2009 | US20090085117 Level shift circuit and semiconductor device thereof |
| 04/02/2009 | US20090085115 Transistor and in-situ fabrication process |
| 04/02/2009 | US20090085114 Semiconductor Structure |
| 04/02/2009 | US20090085113 Semiconductor device |
| 04/02/2009 | US20090085112 Lateral diffusion metal-oxide-semiconductor structure |
| 04/02/2009 | US20090085111 Semiconductor device and method of manufacturing the same |
| 04/02/2009 | US20090085110 Semiconductor device employing precipitates for increased channel stress |
| 04/02/2009 | US20090085107 Trench MOSFET with thick bottom oxide tub |
| 04/02/2009 | US20090085106 Semiconductor device and semiconductor device manufacturing method |
| 04/02/2009 | US20090085105 Trench mosfet and method of manufacture utilizing two masks |
| 04/02/2009 | US20090085104 Semiconductor device and method for manufacturing |
| 04/02/2009 | US20090085103 Semiconductor device and method |
| 04/02/2009 | US20090085101 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance |
| 04/02/2009 | US20090085099 Trench mosfet and method of manufacture utilizing three masks |
| 04/02/2009 | US20090085098 Semiconductor device including vertical mos transistors |
| 04/02/2009 | US20090085097 Methods of forming nitride stressing layer for replacement metal gate and structures formed thereby |
| 04/02/2009 | US20090085096 Nonvolatile Memory Devices and Methods of Forming the Same |
| 04/02/2009 | US20090085095 Profile Engineered Thin Film Devices and Structures |
| 04/02/2009 | US20090085094 Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof |
| 04/02/2009 | US20090085093 Semiconductor devices and method of fabricating the same |
| 04/02/2009 | US20090085091 Non-volatile semiconductor memory device having an erasing gate |
| 04/02/2009 | US20090085090 Non-volatile semiconductor memory device having an erasing gate |
| 04/02/2009 | US20090085089 Two-bit flash memory |
| 04/02/2009 | US20090085088 Semiconductor device and method of forming the same as well as data processing system including the semiconductor device |
| 04/02/2009 | US20090085087 Liner for tungsten/silicon dioxide interface in memory |
| 04/02/2009 | US20090085086 Capacitive electrode having semiconductor layers with an interface of separated grain boundaries |
| 04/02/2009 | US20090085083 Semiconductor memory device and method of forming the same |
| 04/02/2009 | US20090085082 Controlled intermixing of hfo2 and zro2 dielectrics enabling higher dielectric constant and reduced gate leakage |
| 04/02/2009 | US20090085075 Method of fabricating mos transistor and mos transistor fabricated thereby |
| 04/02/2009 | US20090085074 Trench mosfet and method of manufacture utilizing four masks |
| 04/02/2009 | US20090085073 Mosfet structure and method of manufacture |
| 04/02/2009 | US20090085072 Biosensor using nanoscale material as transistor channel and method of fabricating the same |
| 04/02/2009 | US20090085071 Sensor device comprising elongated nanostructures |
| 04/02/2009 | US20090085068 Semiconductor integrated circuit having output buffer circuit |
| 04/02/2009 | US20090085065 Method to fabricate iii-n semiconductor devices on the n-face of layers which are grown in the iii-face direction using wafer bonding and substrate removal |
| 04/02/2009 | US20090085064 Heterojunction semiconductor device and method |
| 04/02/2009 | US20090085063 Compound semiconductor device with t-shaped gate electrode and its manufacture |
| 04/02/2009 | US20090085062 Method to introduce uniaxial strain in multigate nanoscale transistors by self aligned si to sige conversion processes and structures formed thereby |
| 04/02/2009 | US20090085061 High-voltage semiconductor switching element |
| 04/02/2009 | US20090085060 Semiconductor device |