Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2009
04/30/2009US20090108407 Oxygen-doped n-type gallium nitride freestanding single crystal substrate
04/30/2009US20090108405 Semiconductor device and method of manufacturing the semiconductor device
04/30/2009US20090108403 Semiconductor structure and method of manufacture
04/30/2009US20090108402 Method for Manufacturing Capacitor of Semiconductor Device
04/30/2009US20090108401 Semiconductor device
04/30/2009US20090108399 Apparatus and method for manufacturing semiconductor device incorporating fuse elements
04/30/2009US20090108397 Thin film device with layer isolation structure
04/30/2009US20090108396 Electrical fuse having a fully silicided fuselink and enhanced flux divergence
04/30/2009US20090108395 Semiconductor device having increased active region width and method for manufacturing the same
04/30/2009US20090108394 Semiconductor device and method for fabricating the same
04/30/2009US20090108383 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
04/30/2009US20090108378 Structure and method for fabricating self-aligned metal contacts
04/30/2009US20090108377 Method for fabricating gate dielectrics of metal-oxide-semiconductor transistors using rapid thermal processing
04/30/2009US20090108375 Semiconductor device
04/30/2009US20090108371 Semiconductor device and manufacturing the same
04/30/2009US20090108366 Structure And Method To Fabricate Metal Gate High-K Devices
04/30/2009US20090108364 Dual workfunction silicide diode
04/30/2009US20090108363 Strained semiconductor, devices and systems and methods of formation
04/30/2009US20090108362 Semiconductor device and method of manufacturing the same
04/30/2009US20090108361 Tensile strain source using silicon/germanium in globally strained silicon
04/30/2009US20090108359 A semiconductor device and method of manufacture therefor
04/30/2009US20090108358 Saddle type mos device
04/30/2009US20090108356 Integration scheme for multiple metal gate work function structures
04/30/2009US20090108352 Metal-Gated MOSFET Devices Having Scaled Gate Stack Thickness
04/30/2009US20090108351 Finfet memory device with dual separate gates and method of operation
04/30/2009US20090108350 Method For Fabricating Super-Steep Retrograde Well Mosfet On SOI or Bulk Silicon Substrate, And Device Fabricated In Accordance With The Method
04/30/2009US20090108349 High-performance fet device layout
04/30/2009US20090108348 Semiconductor device
04/30/2009US20090108347 Lateral diffusion field effect transistor with asymmetric gate dielectric profile
04/30/2009US20090108345 LDMOS Device and Method of Fabrication
04/30/2009US20090108344 Semiconductor apparatus
04/30/2009US20090108343 Semiconductor component and method of manufacture
04/30/2009US20090108342 Semiconductor component and method of manufacture
04/30/2009US20090108341 Semiconductor device and method of fabricating the same
04/30/2009US20090108340 Semiconductor device and method of fabricating the same
04/30/2009US20090108339 High voltage tmos semiconductor device with low gate charge structure and method of making
04/30/2009US20090108338 Trench MOSFET with implanted drift region
04/30/2009US20090108337 Method of and circuit for protecting a transistor formed on a die
04/30/2009US20090108336 Method for adjusting the height of a gate electrode in a semiconductor device
04/30/2009US20090108335 Stress transfer by sequentially providing a highly stressed etch stop material and an interlayer dielectric in a contact layer stack of a semiconductor device
04/30/2009US20090108334 Charge Trap Device and Method for Fabricating the Same
04/30/2009US20090108333 Non-volatile semiconductor storage device and method of manufacturing the same
04/30/2009US20090108332 Non-volatile memory device with charge trapping layer and method for fabricating the same
04/30/2009US20090108331 Memory and manufacturing method thereof
04/30/2009US20090108330 Split charge storage node outer spacer process
04/30/2009US20090108329 Non-volatile semiconductor device and method of fabricating the same
04/30/2009US20090108327 Gate pattern having two control gates, flash memory including the gate pattern and methods of manufacturing and operating the same
04/30/2009US20090108326 Semiconductor device and method of manufacturing the same
04/30/2009US20090108325 Split gate device and method for forming
04/30/2009US20090108324 Semiconductor fin based nonvolatile memory device and method for fabrication thereof
04/30/2009US20090108323 Method of forming nonvolatile memory device having floating gate and related device
04/30/2009US20090108322 Semiconductor memory having both volatile and non-volatile functionality and method of operating
04/30/2009US20090108321 Flash memory
04/30/2009US20090108320 Tunable capacitor
04/30/2009US20090108319 Dram stack capacitor and fabrication method thereof
04/30/2009US20090108316 Memory device with memory cell including mugfet and fin capacitor
04/30/2009US20090108308 Transistor and method of fabricating the same
04/30/2009US20090108307 Coaxial Transistor Structure
04/30/2009US20090108306 Uniform recess of a material in a trench independent of incoming topography
04/30/2009US20090108305 Semiconductor having a corner compensation feature and method
04/30/2009US20090108304 Protecting semiconducting oxides
04/30/2009US20090108303 Semiconductor component and method
04/30/2009US20090108301 Hybrid orientation semiconductor structure with reduced boundary defects and method of forming same
04/30/2009US20090108300 Silicon germanium heterojunction bipolar transistor structure and method
04/30/2009US20090108299 High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
04/30/2009US20090108298 Semiconductor device
04/30/2009US20090108297 Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor
04/30/2009US20090108295 Dopant profile tuning for mos devices by adapting a spacer width prior to implantation
04/30/2009US20090108294 Scalable high-k dielectric gate stack
04/30/2009US20090108293 Method for Suppressing Lattice Defects in a Semiconductor Substrate
04/30/2009US20090108292 Floating Body Field-Effect Transistors, and Methods of Forming Floating Body Field-Effect Transistors
04/30/2009US20090108291 Semiconductor device and method for fabricating the same
04/30/2009US20090108290 Source/Drain Strained Layers
04/30/2009US20090108288 Semiconductor device and method of manufacturing the same
04/30/2009US20090108266 Friction Control in Apparatus Having Wide Bandgap Semiconductors
04/30/2009US20090108265 Thin film transistor, method of fabricating the same, and display apparatus having the same
04/30/2009US20090108263 Semiconductor device and manufacturing method thereof
04/30/2009US20090108262 Display device
04/30/2009US20090108261 Array substrate and method of manufacturing the same
04/30/2009US20090108260 Pixel structure and method for manufacturing the same
04/30/2009US20090108256 Thin-film transistor substrate and method of manufacturing the same
04/30/2009US20090108252 Lateral two-terminal nanotube devices and method for their formation
04/30/2009US20090108251 Controlled growth of a nanostructure on a substrate
04/30/2009US20090108248 Integrated circuit including doped semiconductor line having conductive cladding
04/30/2009US20090108174 Storage Pixel
04/30/2009DE19961299B4 Sensor zur Erkennung des Klopfens bei einer Brennkraftmaschine Sensor for detecting knocking in an internal combustion engine
04/30/2009DE112007001454T5 Aufbau und Verfahren zum Ausbilden eines Trench-Fet mit abgeschirmtem Gate, wobei die Abschirm- und die Gate-Elektrode miteinander verbunden sind Structure and method for forming a shielded gate trench FET, wherein the shield and the gate electrode are connected to each other
04/30/2009DE112007001249T5 Hocheffizientes, beidseitig gekühltes diskretes Leistungsschaltungsgehäuse, insbesondere Basiselement für innovative Leistungsschaltungsmodule Highly efficient, both sides chilled discrete power circuit housing, in particular basic element for innovative power circuit modules
04/30/2009DE102008052595A1 High-Electron-Mobility-Transistorhalbleiterbauelement mit feldabschwächender Platte und Fabrikationsverfahren zu dessen Herstellung High-Electron Mobility Transistor Semiconductor component with field weakening plate and manufacturing process for its preparation
04/30/2009DE102008045410A1 Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode A semiconductor device having IGBT with built-in diode and semiconductor device having DMOS with built-in diode
04/29/2009EP2053660A1 Semiconductor device
04/29/2009EP2053657A2 Semiconductor devices
04/29/2009EP2053655A2 Chip scale package using large ductile solder balls
04/29/2009EP2053653A1 Dual work function semiconductor device and method for manufacturing the same
04/29/2009EP2053639A1 Method for manufacturing electronic circuit component
04/29/2009EP2053636A2 Method of manufacturing a semiconductor device and semiconductor device manufactured thereof
04/29/2009EP2052414A2 High power insulated gate bipolar transistors
04/29/2009EP2052407A2 Methods and devices for forming nanostructure monolayers and devices including such monolayers
04/29/2009EP1997132A4 Method of forming a semiconductor device and structure thereof
04/29/2009EP1743381B1 Electromechanical electron transfer devices