| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/02/2009 | US20090085059 Semiconductor device including electrostatic discharge protection circuit |
| 04/02/2009 | US20090085058 Electronic device including a magneto-resistive memory device and a process for forming the electronic device |
| 04/02/2009 | US20090085044 Silicon carbide semiconductor substrate and silicon carbide semiconductor device by using thereof |
| 04/02/2009 | US20090085042 Display device having thin film semiconductor device and manufacturing method of thin film semiconductor device |
| 04/02/2009 | US20090085041 Thin film transistor array panel and manufacturing method thereof |
| 04/02/2009 | US20090085040 Liquid crystal display device and fabricating method thereof |
| 04/02/2009 | US20090085038 Substrate for display device, manufacturing method for same and display device |
| 04/02/2009 | US20090085035 Method of Producing a Semiconductor Element in a Substrate and a Semiconductor Element |
| 04/02/2009 | US20090085033 Thin film transistor, pixel structure and fabrication methods thereof |
| 04/02/2009 | US20090085030 Increased reliability for a contact structure to connect an active region with a polysilicon line |
| 04/02/2009 | US20090085027 Three dimensional strained quantum wells and three dimensional strained surface channels by ge confinement method |
| 04/02/2009 | US20090085026 Structure and method for manipulating spin quantum state through dipole polarization switching |
| 04/02/2009 | US20090085025 Memory device including resistance-changing function body |
| 04/02/2009 | US20090084422 Doped lead tellurides for thermoelectric applications |
| 04/02/2009 | US20090083978 End face sensor and method of producing the same |
| 04/02/2009 | DE10350703B4 Verfahren zum Bilden einer Speicherzelle A method of forming a memory cell |
| 04/02/2009 | DE102008046282A1 Gruppe-III-Nitrid-Leistungshalbleiter-Bauteil Group III-nitride power semiconductor component |
| 04/02/2009 | DE102008039881A1 Graben-Transistor und Verfahren zur Herstellung desselben Trench transistor and method of manufacturing the same |
| 04/02/2009 | DE102008015690A1 Halbleitervorrichtung Semiconductor device |
| 04/02/2009 | DE102007045185A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation |
| 04/02/2009 | DE102007045184A1 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation |
| 04/02/2009 | DE102007044046A1 Power semiconductor module, has conductor section connected at side of frame, such that connection element is fixed in its position relative to substrate by positioning of element and frame relative to frame and element, respectively |
| 04/02/2009 | DE102005063332B4 Hochschwindigkeitsdiode und Verfahren zu ihrer Herstellung Hochschwindigkeitsdiode and processes for their preparation |
| 04/02/2009 | DE102005048774B4 Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung Substrate that is at least partially provided on one surface with a coating of a metal, and the use thereof |
| 04/02/2009 | DE102005009000B4 Vertikales Halbleiterbauelement vom Grabenstrukturtyp und Herstellungsverfahren Vertical semiconductor component from the grave type of structure and manufacturing method |
| 04/02/2009 | DE102004064028B4 Verfahren zum Herstellen eines Waferebenenpakets A method of manufacturing a wafer-level package |
| 04/02/2009 | DE102004009087B4 Verfahren zum Einstellen der Durchbruchspannung eines Thyristors A method of adjusting the breakdown voltage of a thyristor |
| 04/02/2009 | DE102004005948B4 MOS-Transistor und Verfahren zur Herstellung einer MOS-Transistorstruktur MOS transistor and method for making a MOS transistor structure |
| 04/02/2009 | DE102004004045B4 Halbleiterbauelement mit temporärem Feldstoppbereich und Verfahren zu dessen Herstellung A semiconductor device with a temporary field stop area and process for its preparation |
| 04/02/2009 | DE10133543B4 Bidirektionales Halbleiterbauelement Bidirectional semiconductor component |
| 04/01/2009 | EP2043159A1 Transistor and semiconductor device |
| 04/01/2009 | EP2043158A2 Trench DMOS transistor with trench bottom implant |
| 04/01/2009 | EP2043157A1 Schottky barrier diode and method for manufacturing the same |
| 04/01/2009 | EP2043145A1 Nonvolatile semiconductor memory and its drive method |
| 04/01/2009 | EP2043141A2 Double-gate transistor structure equipped with a channel with several branches |
| 04/01/2009 | EP2042917A1 Array substrate, method for correcting the same, and liquid crystal display |
| 04/01/2009 | EP2041796A2 Capacitorless one transistor dram cell, integrated circuitry comprising an array of capacitorless one transistor dram cells, and methods of forming lines of capacitorless one transistor dram cells |
| 04/01/2009 | EP2041795A2 Semiconductor heterojunction devices based on sic |
| 04/01/2009 | EP2041794A2 Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth |
| 04/01/2009 | EP2041785A1 Improved cmos devices with stressed channel regions, and methods for fabricating the same |
| 04/01/2009 | EP2041781A1 Subresolution silicon features and methods for forming the same |
| 04/01/2009 | EP2041780A2 Semiconductor devices and methods of manufacture thereof |
| 04/01/2009 | EP1825522A4 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors |
| 04/01/2009 | EP1776719A4 Integrated circuit with multiple spacer insulating region widths |
| 04/01/2009 | EP1745515A4 Tuneable semiconductor device |
| 04/01/2009 | EP1618599A4 Method of making a nanogap for variable capacitive elements and device having a nanogap |
| 04/01/2009 | EP1421633B1 Transistor assembly and method for the production thereof |
| 04/01/2009 | EP1352428B1 A method of manufacturing an active matrix substrate |
| 04/01/2009 | EP1145328B1 Junction-gate field-effect transistor with highly doped connecting areas |
| 04/01/2009 | CN101401213A Field effect transistor using oxide film for channel and method of manufacturing the same |
| 04/01/2009 | CN101401212A Insulated gate-type semiconductor device and manufacturing method thereof |
| 04/01/2009 | CN101401211A Method of forming HfSiN metal for n-FET applications |
| 04/01/2009 | CN101401210A Method, system, and apparatus for gating configurations and improved contacts in nanowire-based electronic devices |
| 04/01/2009 | CN101401209A Memory element and semiconductor device |
| 04/01/2009 | CN101401201A Electronic device and a process for forming the electronic device |
| 04/01/2009 | CN101401196A Vertical eeprom device |
| 04/01/2009 | CN101401195A Method for transferring semiconductor element, method for manufacturing semiconductor device, and semiconductor device |
| 04/01/2009 | CN101401031A Liquid crystal display |
| 04/01/2009 | CN101401030A Active matrix substrate, display device and television receiver |
| 04/01/2009 | CN101400824A Technique for depositing metallic films using ion implantation surface modification for catalysis of electroless deposition |
| 04/01/2009 | CN101400599A Method and device for mounting anisotropically-shaped member, method of manufacturing electronic device, electronic device, and display |
| 04/01/2009 | CN101399291A Nonvolatile semiconductor memory device |
| 04/01/2009 | CN101399290A Non-volatile semiconductor memory device and method of manufacturing the same |
| 04/01/2009 | CN101399289A Nanocrystalline floating gate non-vaporability memory with double layer tunneling medium structure and manufacturing method |
| 04/01/2009 | CN101399288A LDMOS chip light doped drift region structure and forming method |
| 04/01/2009 | CN101399287A Lateral diffusion metal-oxide-semiconductor structure |
| 04/01/2009 | CN101399286A Semiconductor device |
| 04/01/2009 | CN101399285A Field-effect transistor, semiconductor chip and semiconductor device |
| 04/01/2009 | CN101399284A Gallium nitride based transistor structure with high electron mobility |
| 04/01/2009 | CN101399277A Image sensor having large micro-lenses at the peripheral regions |
| 04/01/2009 | CN101399269A Hybrid metal fully silicided (fusi) gate |
| 04/01/2009 | CN101399268A Semiconductor device and method of manufacturing the same |
| 04/01/2009 | CN101399265A 半导体装置 Semiconductor device |
| 04/01/2009 | CN101399228A Semiconductor devices and method of fabricating the same |
| 04/01/2009 | CN101399207A Manufacturing method for vertical nano-wire fet device and fet device manufactured thereby |
| 04/01/2009 | CN101399204A Grid structure, flash memory and method for producing the same |
| 04/01/2009 | CN100474903C Display device |
| 04/01/2009 | CN100474767C Elastic wave device and package substrate |
| 04/01/2009 | CN100474766C Piezoelectric thin-film resonator and filter using the same |
| 04/01/2009 | CN100474635C Photovoltaic apparatus |
| 04/01/2009 | CN100474634C Enhanced photodetector |
| 04/01/2009 | CN100474633C Capacitor in the semiconductor device and method of fabricating the same |
| 04/01/2009 | CN100474632C Schottky barrier diode structure |
| 04/01/2009 | CN100474631C Vertical diode, matrix position sensitive apparatus and manufacturing method of the same |
| 04/01/2009 | CN100474630C Semiconductor device and method for manufacturing the same |
| 04/01/2009 | CN100474629C Wireless chip and method of manufacturing the same |
| 04/01/2009 | CN100474628C Method for annealing silicon thin films and polycrystalline silicon thin films prepared therefrom |
| 04/01/2009 | CN100474627C Thin film transistor with light doped drain/offset (LDD/OFFSET) area structure |
| 04/01/2009 | CN100474626C Field effect transistors and forming method thereof |
| 04/01/2009 | CN100474625C Field effect transistor and application device thereof |
| 04/01/2009 | CN100474624C Semiconductor device including field-effect transistor and manufacturing method thereof |
| 04/01/2009 | CN100474623C N-type carbon nanotube field effect transistor and preparation method thereof |
| 04/01/2009 | CN100474622C Semiconductor device and manufacturing method thereof |
| 04/01/2009 | CN100474621C Semiconductor device and manufacturing method thereof |
| 04/01/2009 | CN100474620C Dielectric isolation type semiconductor device |
| 04/01/2009 | CN100474619C High voltage operating field effect transistor, bias circuit therefor and high voltage circuit thereof |
| 04/01/2009 | CN100474618C Step-embedded SiGe structure for PFET mobility enhancement |
| 04/01/2009 | CN100474617C Field effect transistor using insulator-semiconductor transition material layer as channel material and method for manufacturing the same |
| 04/01/2009 | CN100474616C Trench MOSFET device with improved on-resistance |
| 04/01/2009 | CN100474615C 半导体器件 Semiconductor devices |