Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2009
04/09/2009US20090090917 GaN single-crystal substrate and method for producing GaN single crystal
04/09/2009US20090090916 Thin film transistor, display device having thin film transistor, and method for manufacturing the same
04/09/2009US20090090915 Thin film transistor, display device having thin film transistor, and method for manufacturing the same
04/09/2009US20090090914 Semiconductor thin film, method for producing the same, and thin film transistor
04/09/2009US20090090913 Dual-gate memory device with channel crystallization for multiple levels per cell (mlc)
04/09/2009US20090090911 Manufacturing thin film transistor array panels for flat panel displays
04/09/2009US20090090909 Semiconductor device and manufacturing method thereof
04/09/2009US20090090907 Electrochemical device
04/09/2009US20090090904 Organic semiconductor device
04/09/2009US20090090902 Optical devices using a penternary iii-v material system
04/09/2009DE19956903B4 HF-Halbleiterbauelement und Verfahren zur Integration von HF-Dioden RF semiconductor device and method for the integration of RF diodes
04/09/2009DE10297115B4 Mehrlagiger Phasenübergangsspeicher, insbesondere Speicherzelle und Verfahren zur Herstellung Multi-layer phase transition memory, in particular memory cell and method for producing
04/09/2009DE102008042170A1 Siliziumkarbid-Halbleitervorrichtung Silicon carbide semiconductor device
04/09/2009DE102006056139B4 Halbleitervorrichtung mit einem verbesserten Aufbau für eine hohe Spannungsfestigkeit A semiconductor device having an improved structure for a high withstand voltage
04/09/2009DE102005004707B4 Verfahren zur Herstellung integrierter Schaltkreise mit Silizium-Germanium-Heterobipolartransistoren A process for manufacturing integrated circuits with silicon-germanium heterobipolar
04/09/2009DE102004055213B4 Verfahren zur Herstellung einer integrierten Schaltung auf einem Halbleiterplättchen A method of fabricating an integrated circuit on a semiconductor chip
04/09/2009DE102004028474B4 Integriertes Bauelement in einer SOI-Scheibe An integrated device in an SOI wafer
04/09/2009DE10161129B4 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
04/09/2009DE10130713B4 Halbleiterchip mit Sensorelementen und dynamischer Halbleitersensorchip und Verfahren zu deren Herstellung Semiconductor chip having sensing elements and dynamic semiconductor sensor chip and methods of manufacture
04/09/2009DE10085347B4 Verwendung einer MOS-Struktur als Entstörkondensator bei dünnen Gate-Oxiden Use of a MOS structure and interference suppression capacitor with thin gate oxides
04/09/2009CA2701412A1 Profile engineered thin film devices and structures
04/08/2009EP2045889A2 Nitride semiconductor light-emitting device
04/08/2009EP2045844A1 Semiconductor Module
04/08/2009EP2044631A2 Ballistic deflection transistor and logic circuits based on same
04/08/2009EP2044628A2 Multiple output charge-coupled devices
04/08/2009EP2044623A2 Method and system for isolated and discretized process sequence integration
04/08/2009EP2044622A2 High-voltage bipolar-cmos-dmos integrated circuit devices and modular methods of forming the same
04/08/2009EP2044619A2 Double gate transistor and method of manufacturing same
04/08/2009EP1992016A4 Flip-chip device having underfill in controlled gap
04/08/2009EP1829114A4 Reduced channel pitch in semiconductor device
04/08/2009EP1825517B1 Transistors having buried n-type and p-type regions beneath the source region and methods of fabricating the same
04/08/2009EP1547152B1 A cmos aps with stacked avalanche multiplication layer and low voltage readout electronics
04/08/2009EP1414078B1 Using an electronic device as a quantum supercapacitor
04/08/2009EP0870357B2 Active rectifier having minimal energy losses
04/08/2009CN101405871A Junction termination structures for wide-bandgap power devices
04/08/2009CN101405870A Field effect transistor with gate insulation layer formed by using amorphous oxide film
04/08/2009CN101405869A Thin-film transistor and display device oxide semiconductor and gate dielectric having an oxygen concentration gradient
04/08/2009CN101405868A Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFET
04/08/2009CN101405867A Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
04/08/2009CN101405866A Quantum dot switching device
04/08/2009CN101405865A Strained silicon with elastic edge relaxation
04/08/2009CN101405864A Optoelectronic devices utilizing materials having enhanced electronic transitions
04/08/2009CN101405861A Semiconductor device with solderable loop contacts
04/08/2009CN101405858A Method to produce transistor having reduced gate height
04/08/2009CN101405850A Semiconductor field effect transistor, and method for manufacturing same
04/08/2009CN101405849A Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors
04/08/2009CN101405848A Transistor device having an increased threshold stability without drive current degradation
04/08/2009CN101404295A Thin film transistor, display device having thin film transistor, and method for manufacturing the same
04/08/2009CN101404294A Thin film transistor, display device having thin film transistor, and method for manufacturing the same
04/08/2009CN101404293A Semiconductor device
04/08/2009CN101404292A VDMOS device
04/08/2009CN101404291A High-voltage semiconductor switching element
04/08/2009CN101404284A Semiconductor device and method for fabricating the same
04/08/2009CN101404282A Semiconductor device and method of manufacturing the same
04/08/2009CN101404257A Field effect transistor and method for manufacturing the same
04/08/2009CN100477320C Electronic device, monomer and polymer
04/08/2009CN100477310C Organic semiconductor device
04/08/2009CN100477284C Semiconductor device and method for manufacturing
04/08/2009CN100477283C Diode presenting high breakdown voltage
04/08/2009CN100477282C Devices and operation methods for reducing second bit effect in memory device
04/08/2009CN100477281C Non-volatile semiconductor memory cell and method for producing the same
04/08/2009CN100477280C Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the same
04/08/2009CN100477279C Thin-film transistor structure and method of manufacture thereof
04/08/2009CN100477278C Silicon-on-insulator wafer, silicon-on-insulator device and manufacturing method thereof
04/08/2009CN100477277C Semiconductor wafer and producing method of semiconductor device
04/08/2009CN100477276C Film transistor for driving organic light-emitting-diode and producing method thereof
04/08/2009CN100477275C Body-contacting SOI transistor and method for fabrication thereof
04/08/2009CN100477274C Thin film transistor and method for fabricating the same
04/08/2009CN100477273C Thin film transistor substrate and method of manufacture
04/08/2009CN100477272C TFT array substrate, liquid crystal display device, manufacturing methods of TFT array substrate and liquid crystal display device, and electronic device
04/08/2009CN100477271C Silicon-on-insulator field effect transistor element having a recombination region and method of forming same
04/08/2009CN100477270C VDMOS and IGBT power unit using the PSG doping technology and making process thereof
04/08/2009CN100477269C Semiconductor device and making method thereof
04/08/2009CN100477268C 半导体器件 Semiconductor devices
04/08/2009CN100477267C Iusulated gate semiconductor device and method for producing the same
04/08/2009CN100477266C Non-volatile memory devices including barrier layers and methods of manufacturing the same
04/08/2009CN100477265C Method for fabricating field effect transistor and field effect transistor manufactured with the method
04/08/2009CN100477264C Transistor and method for manufacturing the same
04/08/2009CN100477263C Super-junction semiconductor element and method for fabricating the same
04/08/2009CN100477262C Metal oxide semiconductor transistor with 3-D channels and making method thereof
04/08/2009CN100477261C Semiconductor device
04/08/2009CN100477260C Field effect transistor
04/08/2009CN100477259C Vertical semiconductor device and manufacturing method thereof
04/08/2009CN100477258C Double-silicon-layer fin field effect transistor for chemical mechanical polishing planarization
04/08/2009CN100477257C Silicon carbide semiconductor device and method for manufacturing the same
04/08/2009CN100477256C Full spectrum phosphor blends for white light generation of LED chips
04/08/2009CN100477255C Trench MOSFET with structure having low gate charge
04/08/2009CN100477254C High aspect-ratio PN-junction and method for manufacturing the same
04/08/2009CN100477253C Dielectric-separation type semiconductor device and manufacturing method thereof
04/08/2009CN100477247C Active matrix display and electrooptical device
04/08/2009CN100477245C CMOS image sensor and method for manufacturing the same
04/08/2009CN100477241C Grounded gate and isolation techniques for reducing dark current in CMOS image sensors
04/08/2009CN100477233C Memory devices
04/08/2009CN100477231C Storage unit and operation methods for array of electric charge plunged layer
04/08/2009CN100477230C Nonvolatile memory device and method for fabricating the same
04/08/2009CN100477229C Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the same
04/08/2009CN100477225C Electro-resistance element and method of manufacturing the same
04/08/2009CN100477224C Semiconductor structure and manufacturing method thereof
04/08/2009CN100477223C Semiconductor device
04/08/2009CN100477169C Method for manufacturing nand flash memory device