| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/10/2009 | US20090225602 Multi-state memory cell |
| 09/10/2009 | US20090225581 Multi-bit memory device using multi-plug |
| 09/10/2009 | US20090225578 Semiconductor device and electric apparatus |
| 09/10/2009 | US20090225251 Liquid Crystal Display Device |
| 09/10/2009 | US20090224820 Molecular controlled semiconductor device |
| 09/10/2009 | US20090224739 Heavily doped region in double-diffused source mosfet (ldmos) transistor and a method of fabricating the same |
| 09/10/2009 | US20090224393 Semiconductor device and fabricating method thereof |
| 09/10/2009 | US20090224370 Non-planar cvd diamond-coated cmp pad conditioner and method for manufacturing |
| 09/10/2009 | US20090224369 IC Substrate and Method of Manufacture of IC Substrate |
| 09/10/2009 | US20090224367 Silicon substrate and manufacturing method thereof |
| 09/10/2009 | US20090224366 Semiconductor Wafer Of Single Crystalline Silicon and Process For Its Manufacture |
| 09/10/2009 | US20090224363 Semiconductor device and manufacturing method thereof |
| 09/10/2009 | US20090224359 MOM Capacitors Integrated with Air-Gaps |
| 09/10/2009 | US20090224358 Method and resultant structure for floating body memory on bulk |
| 09/10/2009 | US20090224357 Devices with cavity-defined gates and methods of making the same |
| 09/10/2009 | US20090224355 Semiconductor device with buffer layer |
| 09/10/2009 | US20090224354 Junction barrier schottky diode with submicron channels |
| 09/10/2009 | US20090224353 Diode |
| 09/10/2009 | US20090224342 Magnetoresistive effect element and magnetic random access memory |
| 09/10/2009 | US20090224340 Antiferromagnetic half-metallic semiconductor and manufacturing method therefor |
| 09/10/2009 | US20090224339 Silicon-Germanium-Carbon Semiconductor Structure |
| 09/10/2009 | US20090224338 Semiconductor device and method of manufacturing the same |
| 09/10/2009 | US20090224337 MOS Devices with Partial Stressor Channel |
| 09/10/2009 | US20090224335 Field effect transistor with reduced shallow trench isolation induced leakage current |
| 09/10/2009 | US20090224333 Power Transistor with Protected Channel |
| 09/10/2009 | US20090224329 Semiconductor device and manufacturing method of semiconductor device |
| 09/10/2009 | US20090224328 Semiconductor device |
| 09/10/2009 | US20090224327 Plane mos and the method for making the same |
| 09/10/2009 | US20090224320 Method and apparatus for fabricating an ultra thin silicon on insulator |
| 09/10/2009 | US20090224319 Highly Conductive Shallow Junction Formation |
| 09/10/2009 | US20090224318 Semiconductor device and manufacturing method of the same |
| 09/10/2009 | US20090224316 Power MOS device with conductive contact layer |
| 09/10/2009 | US20090224315 Semiconductor device and method of manufacturing the same |
| 09/10/2009 | US20090224314 Semiconductor device and the method of manufacturing the same |
| 09/10/2009 | US20090224313 Semiconductor device having a gate contact on one surface electrically connected to a gate bus on an opposing surface |
| 09/10/2009 | US20090224312 Semiconductor device and manufacturing method therefor |
| 09/10/2009 | US20090224311 Semiconductor device and method of manufacturing the same |
| 09/10/2009 | US20090224310 Power semiconductor device and method of manufacturing the same |
| 09/10/2009 | US20090224309 Nonvolatile semiconductor storage device and manufacturing method thereof |
| 09/10/2009 | US20090224308 Vertical soi trench sonos cell |
| 09/10/2009 | US20090224307 Semiconductor Device and Method of Fabricating the Same |
| 09/10/2009 | US20090224306 Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method |
| 09/10/2009 | US20090224305 Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method |
| 09/10/2009 | US20090224303 High voltage capacitor and manufacture method thereof |
| 09/10/2009 | US20090224302 Semiconductor device with inherent capacitances and method for its production |
| 09/10/2009 | US20090224297 Semiconductor device having a compressed device isolation structure |
| 09/10/2009 | US20090224296 Methods, Systems and Structures for Forming Semiconductor Structures Incorporating High-Temperature Processing Steps |
| 09/10/2009 | US20090224295 Mos transistor manufacturing |
| 09/10/2009 | US20090224294 Semiconductor device and method of manufacturing the same |
| 09/10/2009 | US20090224293 Semiconductor device and method for manufacturing same |
| 09/10/2009 | US20090224292 Thin film transistor and method of producing thin film transistor |
| 09/10/2009 | US20090224291 Method for self aligned sharp and shallow doping depth profiles |
| 09/10/2009 | US20090224289 Transistors including supported gate electrodes |
| 09/10/2009 | US20090224288 Wide bandgap transistor devices with field plates |
| 09/10/2009 | US20090224287 Semiconductor device having a locally buried insulation layer |
| 09/10/2009 | US20090224286 MOBILITY ENHANCEMENT IN SiGe HETEROJUNCTION BIPOLAR TRANSISTORS |
| 09/10/2009 | US20090224285 THREADING-DISLOCATION-FREE NANOHETEROEPITAXY OF Ge ON Si USING SELF-DIRECTED TOUCH-DOWN OF Ge THROUGH A THIN SiO2 LAYER |
| 09/10/2009 | US20090224284 Semiconductor device and method of producing the same |
| 09/10/2009 | US20090224270 Group iii nitride semiconductor thin film and group iii semiconductor light emitting device |
| 09/10/2009 | US20090224269 Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer |
| 09/10/2009 | US20090224267 Process for fabricating a thin film semiconductor device, thin film semiconductor device, and liquid crystal display |
| 09/10/2009 | US20090224263 Generating Stress in a Field Effect Transistor |
| 09/10/2009 | US20090224262 Thin film transistor having a three-portion gate electrode and liquid crystal display using the same |
| 09/10/2009 | US20090224260 Semiconductor Device and Method for Manufacturing the Same |
| 09/10/2009 | US20090224258 Display device and manufacturing method thereof |
| 09/10/2009 | US20090224255 Semiconductor Device and Manufacturing Method Thereof |
| 09/10/2009 | US20090224254 Thin film transistor array panel and manufacturing method thereof |
| 09/10/2009 | US20090224253 Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device |
| 09/10/2009 | US20090224252 Semiconductor device and manufacturing method thereof |
| 09/10/2009 | US20090224251 Thin film transistor device and method of manufacturing the same |
| 09/10/2009 | US20090224250 Top Gate Thin Film Transistor with Enhanced Off Current Suppression |
| 09/10/2009 | US20090224249 Method For Manufacturing EL Display Device |
| 09/10/2009 | US20090224247 Liquid crystal display device |
| 09/10/2009 | US20090224246 Thin film transistor, display device using the same, and method of manufacturing the same |
| 09/10/2009 | US20090224244 Patterning of submicron pillars in a memory array |
| 09/10/2009 | US20090224239 Thin film transistor, method of manufacturing the same, and electronic device using the same |
| 09/10/2009 | US20090224238 Transistor and method of manufacturing the same |
| 09/10/2009 | US20090224237 Semiconductor Device, Electronic Device, and Method of Manufacturing Semiconductor Device |
| 09/10/2009 | US20090224232 Solid electrolytic capacitor and production method |
| 09/10/2009 | US20090224230 Carbon nanotube field effect transistor |
| 09/10/2009 | US20090224229 POLARITY INVERSION OF TYPE-II InAs/GaSb SUPERLATTICE PHOTODIODES |
| 09/10/2009 | US20090224228 InAs/GaSb Infrared Superlattice Photodiodes Doped with Beryllium |
| 09/10/2009 | US20090224226 Light emitting device of group iii nitride based semiconductor |
| 09/10/2009 | US20090224225 Method of making an integrally gated carbon nanotube field ionizer device |
| 09/10/2009 | US20090224223 Functional molecular element |
| 09/10/2009 | US20090223941 Phase shifter for laser annealing |
| 09/10/2009 | DE112007002782T5 Halbleiterheterostruktur für einen Feldeffekttransistor A semiconductor heterojunction structure for a field effect transistor |
| 09/10/2009 | DE112006003439B4 Verfahren zur Herstellung eines n-Kanal-Transistors und n-Kanal-Transistor Process for the preparation of an n-channel transistor and n-channel transistor |
| 09/10/2009 | DE10220810B4 Halbleiterbauteil Semiconductor device |
| 09/10/2009 | DE102009000135A1 Halbleiterbauelement mit Schottkyzonen in einer Driftzone Semiconductor component with Schottkyzonen in a drift region |
| 09/10/2009 | DE102008016437B3 Verfahren zur Einkapselung eines Gatestapels mit großem ε durch Bilden einer Beschichtung bei zwei unterschiedlichen Prozesstemperaturen Method of encapsulating a gate stack with large ε by forming a coating at two different process temperatures |
| 09/10/2009 | DE102008011926A1 Semiconductor device i.e. integrated circuit, manufacturing method for e.g. microprocessor, involves removing part of deformation inducing layer from above transistor under application of dielectric layer as etch-stopping material |
| 09/10/2009 | DE102008011813A1 Halbleiterbauelement mit einem Metallgatestapel mit reduzierter Höhe und Verfahren zur Herstellung des Bauelements A semiconductor device having a metal gate stack with reduced height and method for manufacturing the component |
| 09/10/2009 | DE102008010854A1 Semiconductor device arrangement, has switchable element e.g. depletion MOSFET, provided between connection point and source of power transistor, and maintaining connection of connection point with source of transistor |
| 09/10/2009 | DE102008010514A1 Transistor und Verfahren zum Betreiben eines Transistors Transistor and method of operating a transistor |
| 09/10/2009 | DE102008010323A1 Verfahren zur Herstellung einer elektronischen Vorrichtung, die einen bipolaren PNP-Transistor umfasst A method of manufacturing an electronic device comprising a bipolar PNP transistor |
| 09/10/2009 | DE102008004682A1 Integrated switching arrangement, has protection structure, whose one of semiconductor zones of conducting type is arranged in semiconductor substrate and attached at connecting zone in electrical conducting manner |
| 09/10/2009 | DE102007028920B4 Feldeffekttransistor mit einem in einer Siliziumnitridschicht gebildeten Hohlraum und Verfahren zur Herstellung desselben Field effect transistor of the same with a cavity formed in a silicon nitride layer and processes for preparing |
| 09/10/2009 | DE102007015500B4 Verfahren zum Erzeugen einer Zugverspannung bei einem Halbleiterbauelement durch wiederholtes Anwenden von "Verspannungsgedächtnisverfahren" und Halbleiterbauelement A method of generating a tensile stress in a semiconductor device by repeatedly applying "stress memorization process" and semiconductor component |
| 09/10/2009 | DE102004031108B4 In der Ebene schaltendes Flüssigkristalldisplay und Arraysubstrat für ein solches In the plane-switching liquid crystal display and array substrate for such |