Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2009
09/24/2009US20090236670 Semiconductor Device and a Manufacturing Process Thereof
09/24/2009US20090236669 Metal gate transistor and polysilicon resistor and method for fabricating the same
09/24/2009US20090236666 Integrated Circuitry
09/24/2009US20090236665 Semiconductor device and fabrication method thereof
09/24/2009US20090236664 Integration scheme for constrained seg growth on poly during raised s/d processing
09/24/2009US20090236663 Hybrid orientation substrate with stress layer
09/24/2009US20090236662 Guard ring structures for high voltage cmos/low voltage cmos technology using ldmos (lateral double-diffused metal oxide semiconductor) device fabrication
09/24/2009US20090236661 DMOS-transistor having improved dielectric strength of drain source voltages
09/24/2009US20090236660 Insulated-Gate Field-Effect Transistor and Method of Making the Same
09/24/2009US20090236659 Isolation structure for semiconductor device with multiple terminals
09/24/2009US20090236658 Array of vertical trigate transistors and method of production
09/24/2009US20090236657 Impact ionization devices and methods of making the same
09/24/2009US20090236656 Semiconductor device having vertical channel transistor and method for fabricating the same
09/24/2009US20090236655 Integrated circuit device gate structures
09/24/2009US20090236654 Nonvolatile semiconductor storage device and method for manufacturing the same
09/24/2009US20090236653 Nonvolatile semiconductor memory device
09/24/2009US20090236652 Semiconductor memory device
09/24/2009US20090236651 Semiconductor devices having a convex active region
09/24/2009US20090236650 Tantalum lanthanide oxynitride films
09/24/2009US20090236649 Embedded memory device and a manufacturing method thereof
09/24/2009US20090236647 Semiconductor device with capacitor
09/24/2009US20090236646 Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using the same
09/24/2009US20090236642 Transistor and cvd apparatus used to deposit gate insulating film thereof
09/24/2009US20090236641 Method of manufacturing semiconductor device for providing improved isolation between contact and cell gate electrode
09/24/2009US20090236640 Method and structure for reducing induced mechanical stresses
09/24/2009US20090236639 Stacked bit line dual word line nonvolatile memory
09/24/2009US20090236636 Closed Cell Array Structure Capable of Decreasing Area of non-well Junction Regions
09/24/2009US20090236635 Wide bandgap hemts with source connected field plates
09/24/2009US20090236634 Nitride semiconductor epitaxial wafer and nitride semiconductor device
09/24/2009US20090236632 Fet having high-k, vt modifying channel and gate extension devoid of high-k and/or vt modifying material, and design structure
09/24/2009US20090236631 Bidirectional PNPN silicon-controlled rectifier
09/24/2009US20090236629 Sustrate and Semiconductor Light-Emitting Device
09/24/2009US20090236612 Silicon carbide mos semiconductor device
09/24/2009US20090236611 Silicon carbide semiconductor device and method of making the same
09/24/2009US20090236610 Method for Manufacturing a Semiconductor Structure, and a Corresponding Semiconductor Structure
09/24/2009US20090236609 Method and Apparatus for Producing Graphene Oxide Layers on an Insulating Substrate
09/24/2009US20090236608 Method for Producing Graphitic Patterns on Silicon Carbide
09/24/2009US20090236607 Electronic circuit
09/24/2009US20090236606 Dual Gate Layout for Thin Film Transistor
09/24/2009US20090236603 Process for forming a wiring film, a transistor, and an electronic device
09/24/2009US20090236602 Integrated Circuit, Semiconductor Device Comprising the Same, Electronic Device Having the Same, and Driving Method of the Same
09/24/2009US20090236601 Thin film transistor
09/24/2009US20090236600 Thin film transistor and display device
09/24/2009US20090236597 Process to make metal oxide thin film transistor array with etch stopping layer
09/24/2009US20090236596 Thin film field effect transistor and display
09/24/2009US20090236595 Semiconductor Structures with Rare-earths
09/24/2009US20090236594 Method for fabricating an inorganic nanocomposite
09/24/2009US20090236588 Nanowire-based device having isolated electrode pair
09/24/2009US20090236587 Semiconductor device including a plurality of different functional elements and method of manufacturing the same
09/24/2009US20090236586 Epitaxial material used for gan based led with low polarization effect and manufacturing method thereof
09/24/2009US20090236585 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
09/24/2009US20090235983 Interlayer Design for Epitaxial Growth of Semiconductor Layers
09/24/2009DE19733975B4 Speicherzelle und Verfahren zum Programmieren sowie Verfahren zum Lesen derselben Memory cell and method for programming and method of reading same
09/24/2009DE10223951B4 Hochvoltdiode mit optimiertem Abschaltverfahren und entsprechendes Optimierverfahren High-voltage diode with optimized cut-off method and corresponding optimization method
09/24/2009DE102009013781A1 Halbleitervorrichtung aus Siliciumcarbid und Verfahren zu ihrer Herstellung The semiconductor device of silicon carbide and methods for their preparation
09/24/2009DE102009012855A1 Diode mit Schottky-Übergang und PN-Übergang und Verfahren zum Herstellen derselben Diode Schottky junction and PN junction and method of making same
09/24/2009DE102009011234A1 Elektronische Baugruppe Electronic assembly
09/24/2009DE102009000627A1 MIM-Kondensatoren in Halbleiterkomponenten MIM capacitors in semiconductor components
09/24/2009DE102008015118A1 Raumtemperatur-Quantendraht-(array)-Feldeffekt-(Leistungs-) Transistor "QFET", insbesondere magnetisch "MQFET", aber auch elektrisch oder optisch gesteuert Room-temperature quantum wire (array) -Feldeffekt- (power) transistor "QFET", in particular magnetic "MQFET", but also controlled electrically or optically
09/24/2009DE102005063112B4 Verfahren zur Herstellung eines Hochspannungstransistors und damit hergestellter Hochspannungstransistorr A method for manufacturing a high voltage transistor and thus produced Hochspannungstransistorr
09/24/2009DE102005047058B4 Herstellungsverfahren für einen Graben-Transistor und entsprechender Graben-Transistor Manufacturing method of a trench transistor and trench transistor corresponding
09/24/2009DE10127885B4 Trench-Leistungshalbleiterbauelement Trench-power semiconductor component
09/24/2009DE10049356B4 Halbleitersensor Semiconductor sensor
09/23/2009EP2102899A1 Nitride nanowires and method of producing such
09/23/2009EP1277033B1 Micromechanical component and balancing method
09/23/2009EP1186020B1 A method of manufacturing a semiconductor device
09/23/2009EP1008187B1 Semiconductor device having a rectifying junction and method of manufacturing same
09/23/2009CN101542759A Semiconductor wafer and semiconductor device and manufacture methods thereof
09/23/2009CN101542744A Self-aligned organic thin film transistor and fabrication method thereof
09/23/2009CN101542743A Semiconductor device and method for manufacturing the same
09/23/2009CN101542742A Thin-film transistor, its manufacturing method, and display
09/23/2009CN101542741A Trench gate type transistor and method for manufacturing the same
09/23/2009CN101542740A Semiconductor device and method for manufacturing the same
09/23/2009CN101542739A Silicon carbide semiconductor device and process for producing the same
09/23/2009CN101542738A Power MOSFET device structure for high frequency applications
09/23/2009CN101542737A Self-aligned impact-ionization field effect transistor
09/23/2009CN101542736A Schottky barrier diode and method for manufacturing the same
09/23/2009CN101540586A Operational amplifier, temperature-dependent system and bandgap reference circuit
09/23/2009CN101540343A 4H-SiC PiN /schottky diode of offset field plate structure and manufacturing method of 4H-SiC PiN /schottky diode
09/23/2009CN101540342A Thin film transistor and display device
09/23/2009CN101540341A Thin film transistor
09/23/2009CN101540340A Thin film transistor
09/23/2009CN101540339A High-side NLDMOS structure
09/23/2009CN101540338A Groove flat-grid MOSFET component and fabricating method thereof
09/23/2009CN101540333A Thin-film transistor substrate and display device having the same
09/23/2009CN101540332A Display device and manufacturing method thereof
09/23/2009CN101540331A System for display images and fabrication method thereof
09/23/2009CN101540328A Nonvolatile semiconductor storage device and method for manufacturing the same
09/23/2009CN101540327A Non-volatile semiconductor storing device
09/23/2009CN101540324A Semiconductor device
09/23/2009CN101540320A Static discharge protection diode
09/23/2009CN101540313A Switching assembly with bond connection
09/23/2009CN101540292A Method for testing the stress of side wall of field effect transistor
09/23/2009CN101540286A Method for production of semiconductor device
09/23/2009CN101540284A Method for preparing rectifier diode based on ZnO nano wire
09/23/2009CN101539819A Display panel and method for manutacturing the same
09/23/2009CN101539691A System for displaying images and manufacturing method thereof
09/23/2009CN100544033C Thin film transistor substrate and its manufacturing method
09/23/2009CN100544032C Semiconductor device having channel including multicomponent oxide
09/23/2009CN100544031C Semiconductor device having channel including multicomponent oxide