Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2009
10/06/2009US7598515 Semiconductor device including a strained superlattice and overlying stress layer and related methods
10/06/2009US7598513 Semiconductors; chemical vapor deposition
10/06/2009US7598173 Electro-optic displays, and components for use therein
10/06/2009US7598140 Method of producing a semiconductor device having an oxide film
10/06/2009US7598139 Single chip data processing device with embedded nonvolatile memory and method thereof
10/06/2009US7598131 High power-low noise microwave GaN heterojunction field effect transistor
10/06/2009US7598129 Light-emitting device and method for manufacturing the same
10/06/2009US7598112 Phase change memory devices and their methods of fabrication
10/06/2009US7598111 Thin film transistor and method of manufacturing the same
10/01/2009WO2009120900A2 Interconnection system on a plane adjacent to a solid-state device structure
10/01/2009WO2009120612A2 Semiconductor devices having tensile and/or compressive strain and methods of manufacturing and design structure
10/01/2009WO2009120552A2 Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
10/01/2009WO2009119840A1 Acceleration sensor element, acceleration sensor device and method for manufacturing acceleration sensor element
10/01/2009WO2009119735A1 Semiconductor device, and method for manufacturing the same
10/01/2009WO2009119666A1 Sram cell and sram device
10/01/2009WO2009119658A1 Nonvolatile semiconductor memory element and semiconductor device
10/01/2009WO2009119527A1 Semiconductor memory and method for manufacturing the same
10/01/2009WO2009119479A1 Semiconductor device, and method for manufacturing the same
10/01/2009WO2009119357A1 Epitaxial substrate for semiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
10/01/2009WO2009119356A1 Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
10/01/2009WO2009119248A1 Semiconductor device
10/01/2009WO2009119175A1 Semiconductor device
10/01/2009WO2009119148A1 Film forming method and semiconductor device manufacturing method
10/01/2009WO2009119103A1 Semiconductor substrate, semiconductor device and semiconductor device manufacturing method
10/01/2009WO2009119102A1 Semiconductor substrate, semiconductor substrate manufacturing method and semiconductor device
10/01/2009WO2009119052A1 Carbon nanowall and process for producing the same
10/01/2009WO2009118783A1 Semiconductor memory, semiconductor memory system using same, and manufacturing method for quantum dot used for semiconductor memory
10/01/2009WO2009118354A1 Metallic nanocrystal patterning
10/01/2009US20090246921 Semiconductor devices having tensile and/or compressive strain and methods of manufacturing and design structure
10/01/2009US20090246895 Apparatus and methods for combining light emitters
10/01/2009US20090244984 Method for driving a nonvolatile semiconductor memory device
10/01/2009US20090244813 Methods Of Making A Niobium Metal Oxide and Oxygen Reduced Niobium Oxides
10/01/2009US20090244423 Contact structure
10/01/2009US20090243985 Contact structure of conductive films and thin film transistor array panel including the same
10/01/2009US20090243658 Semiconductor integrated circuit device and method for manufacturing the same
10/01/2009US20090243645 Manufacturing method of a semiconductor device, a semiconductor wafer, and a test method
10/01/2009US20090243044 Semiconductor wafer, semiconductor device, and method of manufacturing semiconductor device
10/01/2009US20090243043 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials
10/01/2009US20090243042 Lateral semiconductor device
10/01/2009US20090243041 Semiconductor Devices and Methods of Manufacture Thereof
10/01/2009US20090243040 Micro-heater arrays and pn-junction devices having micro-heater arrays, and methods for fabricating the same
10/01/2009US20090243039 MIM Capacitor And Method For Manufacturing the Same
10/01/2009US20090243038 Method of manufacturing semiconductor device and semiconductor device
10/01/2009US20090243037 Semiconductor device having capacitors fixed to support patterns and method for manufacturing the same
10/01/2009US20090243036 Semiconductor Devices and Methods of Manufacture Thereof
10/01/2009US20090243034 Semiconductor device
10/01/2009US20090243031 Structure and method to control oxidation in high-k gate structures
10/01/2009US20090243030 Method of forming shallow trench isolation structure
10/01/2009US20090243027 semiconductor integrated circuit device and a method of manufacturing the same
10/01/2009US20090243026 Schottky Barrier Diode and Method for Using the Same
10/01/2009US20090243021 Isolation structures for preventing photons and carriers from reaching active areas and methods of formation
10/01/2009US20090243008 Magnetoresistive element and magnetic memory
10/01/2009US20090243007 Spin-dependent tunnelling cell and method of formation thereof
10/01/2009US20090243006 Electronic part with affixed mems
10/01/2009US20090243005 Semiconductor physical quantity sensor and method for manufacturing the same
10/01/2009US20090243004 Integrated structure for MEMS device and semiconductor device and method of fabricating the same
10/01/2009US20090243003 Manufacturing method of a gas sensor integrated on a semiconductor substrate
10/01/2009US20090243002 Semiconductor device and method of fabricating the same
10/01/2009US20090243001 Sequential deposition and anneal of a dielectic layer in a charge trapping memory device
10/01/2009US20090243000 Method, structure and design structure for customizing history effects of soi circuits
10/01/2009US20090242999 Method for encapsulating a high-k gate stack by forming a liner at two different process temperatures
10/01/2009US20090242998 Penetrating implant for forming a semiconductor device
10/01/2009US20090242997 Method for fabricating semiconductor structure and structure of static random access memory
10/01/2009US20090242996 Soi transistor with floating body for information storage having asymmetric drain/source regions
10/01/2009US20090242995 Semiconductor device and method for fabricating the same
10/01/2009US20090242993 ESD protection device and manufacturing method thereof
10/01/2009US20090242991 Semiconductor device
10/01/2009US20090242989 Complementary metal-oxide-semiconductor device with embedded stressor
10/01/2009US20090242988 High frequency semiconductor circuit device
10/01/2009US20090242986 Multi-gate field effect transistor and method for manufacturing the same
10/01/2009US20090242985 Method, structure and design structure for customizing history effects of soi circuits
10/01/2009US20090242984 Semiconductor device and method of manufacturing the same
10/01/2009US20090242983 Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
10/01/2009US20090242982 Self-aligned complementary ldmos
10/01/2009US20090242981 Semiconductor device
10/01/2009US20090242979 Vertical Transistor of Semiconductor Device and Method of Forming the Same
10/01/2009US20090242978 Termination Structure for Power Devices
10/01/2009US20090242977 Semiconductor device and dc-dc converter
10/01/2009US20090242976 Semiconductor device
10/01/2009US20090242975 Vertical pillar transistor
10/01/2009US20090242974 Semiconductor device and method for fabricating the same
10/01/2009US20090242973 Source and body contact structure for trench-dmos devices using polysilicon
10/01/2009US20090242972 Vertical channel transistor in semiconductor device and method of fabricating the same
10/01/2009US20090242971 Semiconductor device and method of fabricating the same
10/01/2009US20090242970 Semiconductor device, capacitor, and field effect transistor
10/01/2009US20090242969 Semiconductor storage device and method of manufacturing the same
10/01/2009US20090242968 Nonvolatile semiconductor memory device and method for manufacturing same
10/01/2009US20090242967 Non-volatile semiconductor storage device and method of manufacturing the same
10/01/2009US20090242966 Vertical-type semiconductor devices
10/01/2009US20090242965 Memory cell device having vertical channel and double gate structure
10/01/2009US20090242964 Non-volatile memory device
10/01/2009US20090242963 Semiconductor device and method for manufacturing a semiconductor device
10/01/2009US20090242962 Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices
10/01/2009US20090242961 Recessed channel select gate for a memory device
10/01/2009US20090242960 Semiconductor memory device and manufacturing method thereof
10/01/2009US20090242959 Flash Memory Cell
10/01/2009US20090242958 Nand-type nonvolatile semiconductor memory device
10/01/2009US20090242957 Atomic layer deposition processes for non-volatile memory devices
10/01/2009US20090242956 Tunnel dielectrics for semiconductor devices
10/01/2009US20090242955 Integrated Circuit, Memory Device and Methods of Manufacturing the Same
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