Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2009
10/15/2009US20090256192 Nonvolatile semiconductor memory device and method of manufacturing the same
10/15/2009US20090256191 Split gate non-volatile memory cell with improved endurance and method therefor
10/15/2009US20090256190 Semiconductor device and manufacturing method thereof
10/15/2009US20090256189 Two bit u-shaped memory structure and method of making the same
10/15/2009US20090256188 Method for manufacturing semiconductor device and the semiconductor device
10/15/2009US20090256187 Semiconductor device having vertical pillar transistors and method for manufacturing the same
10/15/2009US20090256186 Split gate non-volatile memory cell
10/15/2009US20090256185 Metallized conductive strap spacer for soi deep trench capacitor
10/15/2009US20090256181 Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
10/15/2009US20090256178 Semiconductor device having misfets and manufacturing method thereof
10/15/2009US20090256177 Semiconductor device including an ohmic layer
10/15/2009US20090256175 Method of doping transistor comprising carbon nanotube, method of controlling position of doping ion, and transistors using the same
10/15/2009US20090256174 Device structures for a high voltage junction field effect transistor manufactured using a hybrid orientation technology wafer and design structures for a high voltage integrated circuit
10/15/2009US20090256172 Method of laser annealing semiconductor layer and semiconductor devices produced thereby
10/15/2009US20090256162 Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals
10/15/2009US20090256161 Power conversion apparatus
10/15/2009US20090256160 Semiconductor device and method for manufacturing the same
10/15/2009US20090256159 GaN semiconductor device
10/15/2009US20090256154 Flexible substrate, method of fabricating the same, and thin film transistor using the same
10/15/2009US20090256153 Thin film transistor matrix device and method for fabricating the same
10/15/2009US20090256152 Pixel structure for transflective lcd panel
10/15/2009US20090256151 Display substrate and method of manufacturing the same
10/15/2009US20090256149 Structure for Measuring Body Pinch Resistance of High Density Trench MOSFET Array
10/15/2009US20090256148 Zinc oxide light emitting diode
10/15/2009US20090256147 Thin film transistor and method of manufacturing the same
10/15/2009US20090256146 Semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same
10/15/2009US20090256136 Microresonator systems and methods of fabricating the same
10/15/2009US20090256135 Thermal electron emitter and thermal electron emission device using the same
10/15/2009US20090256134 Process for Fabricating Nanowire Arrays
10/15/2009US20090256133 Multiple layer resistive memory
10/15/2009US20090256129 Sidewall structured switchable resistor cell
10/15/2009US20090256106 Patterned photovoltaic cell
10/15/2009US20090255807 Quantum dot manipulating method and quantum dot production/manipulation apparatus
10/15/2009DE112007003116T5 Verspannter Transistor und Verfahren zu dessen Herstellung Strained transistor and method of producing the
10/15/2009DE112007003087T5 Logische Schaltungen mit Kohlenstoff-Nanoröhren-Transistoren Logic circuits with carbon nanotube transistors
10/15/2009DE102009010196A1 Halbleiterbauelemente und Verfahren zu deren Herstellung Semiconductor devices and processes for their preparation
10/14/2009EP2109162A1 Organic semiconductor composite, organic transistor material and organic field effect transistor
10/14/2009EP2109136A1 Flotox-type eeprom
10/14/2009EP2109135A2 Methods of making a field-effect semiconductor device
10/14/2009EP2108197A2 A system and method for using pre-equilibrium ballistic charge carrier refraction
10/14/2009EP2108195A1 Electronic field effect devices and methods for their manufacture
10/14/2009EP2108194A1 Superjunction power semiconductor device
10/14/2009EP2108054A1 Plasma etching of diamond surfaces
10/14/2009EP1506573B1 Manufacturing method for ultra small thin windows in floating gate transistors
10/14/2009EP1265279B1 Method of fabricating a flash memory device
10/14/2009CN201327830Y SCR with no assistant, low triggering voltage and high maintaining voltage
10/14/2009CN101558500A Power semiconductor device
10/14/2009CN101558499A Structure and method for forming laterally extending dielectric layer in a trench-gate FET
10/14/2009CN101558498A Electrostatic discharge protection circuit
10/14/2009CN101558497A Transistor device and method of manufacturing such a transistor device
10/14/2009CN101558480A Semiconductor device production apparatus and semiconductor device production method
10/14/2009CN101558475A Semiconductor device manufacturing method
10/14/2009CN101558473A Method for forming silicon based thin film by plasma CVD method
10/14/2009CN101558472A Method and device for forming silicon dot and silicon dot and method and device for forming substrate with insulating film
10/14/2009CN101558290A Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device
10/14/2009CN101556970A MOS capacitor capable of reducing plasma damage effect
10/14/2009CN101556969A Enhanced silicon carbide metal semiconductor field effect transistor and manufacturing method thereof
10/14/2009CN101556968A Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same
10/14/2009CN101556967A Power semiconductor and manufacturing method thereof
10/14/2009CN101556966A MOS tube capable of reducing damage effect of plasma
10/14/2009CN101556962A Image sensor with sensing transistor having two gates and method of operating the same
10/14/2009CN101556959A Array base plate and liquid crystal display unit
10/14/2009CN101556957A Semiconductor memory device and manufacturing method thereof
10/14/2009CN101556956A Discrete power MOSFET integrated with sense fet
10/14/2009CN101556955A Structure for measuring body pinch resistance of high density trench MOSFET array
10/14/2009CN101556954A Semiconductor device having vertical pillar transistors and method for manufacturing the same
10/14/2009CN101556938A Preparation method of nanocrystalline floating gate storage based on nitriding treatment
10/14/2009CN101556921A Semiconductor device and making method thereof
10/14/2009CN100551192C Electrode for organic device, OFET with electrode for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device
10/14/2009CN100550471C Light emitting device, method for manufacturing thereof and electronic appliance
10/14/2009CN100550470C Method for manufacturing light emitting device, and electronic device
10/14/2009CN100550456C MgO dual-potential magnetic tunnel junction with quanta effect and its uses
10/14/2009CN100550440C Semiconductor device and semiconductor device manufacturing method
10/14/2009CN100550430C Semiconductor device and method of manufacturing such a device
10/14/2009CN100550429C MEMS device having contact and standoff bumps and related methods
10/14/2009CN100550428C Non-volatile memory device and design method thereof
10/14/2009CN100550427C Thin-film transistor having semiconducting multi-cation oxide channel and making methods
10/14/2009CN100550426C Thin-film transistor and production method therefor
10/14/2009CN100550425C Semiconductor device and manufacturing method thereof
10/14/2009CN100550424C Semiconductor device and production method therefor
10/14/2009CN100550423C Semiconductor device having ternary compound channel layer
10/14/2009CN100550422C 半导体结构 The semiconductor structure
10/14/2009CN100550421C 半导体装置 Semiconductor device
10/14/2009CN100550420C Vertical transistor manufacture method
10/14/2009CN100550419C Semiconductor device and its usage method
10/14/2009CN100550418C Metal oxide semiconductor transistor having buffer zone under source and drain region and its manufacturing method
10/14/2009CN100550417C Semiconductor device
10/14/2009CN100550416C Power semiconductor device
10/14/2009CN100550415C Semiconductor devices and method of manufacturing them
10/14/2009CN100550414C Electro-optical device, method of manufacturing the same, and electronic instrument
10/14/2009CN100550413C Organic el display device, organic transistor and methods for manufacturing such organic el display device and organic transistor
10/14/2009CN100550397C Active matrix TFT array substrate and method of manufacturing the same
10/14/2009CN100550394C Semiconductor device and method of manufacturing the same
10/14/2009CN100550392C Nonvolatile semiconductor memory device and manufacturing method thereof
10/14/2009CN100550391C Ferroelectric capacitor and ferroelectric field effect tube and manufacturing method thereof
10/14/2009CN100550388C Integrated circuit arrangement comprising isolating trenches and a field effect transistor, and associated production method
10/14/2009CN100550386C Complementary metal oxide semiconductor device
10/14/2009CN100550383C Semiconductor device and electric device
10/14/2009CN100550340C Method of manufacturing a semiconductor device
10/14/2009CN100550339C Method for fabricating semiconductor device having trench isolation
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