Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2009
10/29/2009US20090267189 Photo-patterned carbon electronics
10/29/2009US20090267187 Method for manufacturing an energy storage device and structure therefor
10/29/2009US20090267185 Method of manufacturing semiconductor device
10/29/2009US20090267184 Metal-insulator-metal (mim) capacitor structure and methods of fabricating same
10/29/2009US20090267183 Through-substrate power-conducting via with embedded capacitance
10/29/2009US20090267178 Device structures for active devices fabricated using a semiconductor-on-insulator substrate and design structures for a radiofrequency integrated circuit
10/29/2009US20090267177 Semiconductor device and method of fabricating the same
10/29/2009US20090267176 A method for forming a multi-layer shallow trench isolation structure in a semiconductor device
10/29/2009US20090267174 Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production
10/29/2009US20090267167 Dual-face fluid components
10/29/2009US20090267166 Method of manufacturing a device with a cavity
10/29/2009US20090267165 Wafer level package structure, and sensor device obtained from the same package structure
10/29/2009US20090267164 Method of manufacturing a semiconductor sensor device and semiconductor sensor device
10/29/2009US20090267163 Semiconductor Device
10/29/2009US20090267162 Method of manufacturing semiconductor device and semiconductor device
10/29/2009US20090267161 Increasing body dopant uniformity in multi-gate transistor devices
10/29/2009US20090267155 Semiconductor device and method for manufacturing the same
10/29/2009US20090267153 Localized Spacer For A Multi-Gate Transistor
10/29/2009US20090267152 Semiconductor device and method of manufacturing a semiconductor device
10/29/2009US20090267151 Semiconductor device, electronic device, and manufacturing method thereof
10/29/2009US20090267150 Semiconductor Device and Method for Fabricating the Same
10/29/2009US20090267149 Source/drain junction for high performance mosfet formed by selective epi process
10/29/2009US20090267148 Semiconductor integrated circuit devices
10/29/2009US20090267146 Structure and method for semiconductor power devices
10/29/2009US20090267145 Mosfet device having dual interlevel dielectric thickness and method of making same
10/29/2009US20090267144 Semiconductor device and method for manufacturing the same
10/29/2009US20090267143 Trenched mosfet with guard ring and channel stop
10/29/2009US20090267142 Semiconductor device and method of manufacturing same
10/29/2009US20090267141 Method for fabricating silicon carbide vertical mosfet devices
10/29/2009US20090267140 Mosfet structure with guard ring
10/29/2009US20090267138 Semiconductor device and method for manufacturing the same
10/29/2009US20090267137 Method of manufacturing semiconductor device having notched gate mosfet
10/29/2009US20090267136 Semiconductor memory device and method of manufacturing the same
10/29/2009US20090267135 Non-volatile semiconductor storage device and method of manufacturing the same
10/29/2009US20090267134 Nonvolatile semiconductor memory apparatus
10/29/2009US20090267133 Flash memory device and method for fabricating the same
10/29/2009US20090267132 Gate structures in semiconductor devices
10/29/2009US20090267131 Nonvolatile semiconductor memory device and method of manufacturing the same
10/29/2009US20090267129 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same
10/29/2009US20090267128 Three dimensional stacked nonvolatile semiconductor memory
10/29/2009US20090267122 Semiconductor device and method of manufacturing the semiconductor device
10/29/2009US20090267119 Semiconductor device and method of manufacturing semiconductor device
10/29/2009US20090267117 Enhanced stress for transistors
10/29/2009US20090267116 Wide bandgap transistors with multiple field plates
10/29/2009US20090267115 Club extension to a t-gate high electron mobility transistor
10/29/2009US20090267114 Field effect transistor
10/29/2009US20090267113 Semiconductor device and method of manufacturing the same
10/29/2009US20090267111 MOSFET with Integrated Field Effect Rectifier
10/29/2009US20090267110 Integrated low leakage schottky diode
10/29/2009US20090267100 Nitride-based semiconductor device and method of manufacturing the same
10/29/2009US20090267084 Integrated circuit with wireless connection
10/29/2009US20090267082 Semiconductor device and manufacturing method of the same
10/29/2009US20090267081 Semiconductor device and method for fabrication thereof
10/29/2009US20090267080 Semiconductor device
10/29/2009US20090267079 Externally configurable integrated circuits
10/29/2009US20090267078 Enhancement Mode III-N HEMTs
10/29/2009US20090267073 Semiconductor Device and Method of Manufacturing the Same
10/29/2009US20090267072 Electro-optical device and method for manufacturing the same
10/29/2009US20090267069 Semiconductor device and method for manufacturing the same
10/29/2009US20090267068 Thin film transistor
10/29/2009US20090267067 Thin film transistor
10/29/2009US20090267064 Semiconductor thin film and method for manufacturing same, and thin film transistor
10/29/2009US20090267062 Zinc oxide Based Compound Semiconductor Device
10/29/2009US20090267057 Organic field-effect transistor for sensing applications
10/29/2009US20090267056 Memory cell
10/29/2009US20090267055 Transistor, method for manufacturing same, and semiconductor device comprising such transistor
10/29/2009US20090267054 Apparatus, method and system for reconfigurable circuitry
10/29/2009US20090267053 Carbon-nanotube based opto-electric device
10/29/2009US20090267052 LAYER TRANSFER OF LOW DEFECT SiGe USING AN ETCH-BACK PROCESS
10/29/2009US20090267051 Method of preparing quantum dot-inorganic matrix composites
10/29/2009US20090267044 Phase change memory device having a bent heater and method for manufacturing the same
10/29/2009US20090267015 Method for Protecting Substrate
10/29/2009US20090266396 Polycrystalline Silicon Substrate, Method for Producing Same, Polycrystalline Silicon Ingot, Photoelectric Converter and Photoelectric Conversion Module
10/29/2009US20090266170 Pressure sensor, manufacturing method thereof, and electronic component provided therewith
10/29/2009DE19651550B4 Halbleitervorrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
10/29/2009DE112007000161B4 Multifinger-FET für Hochfrequenz Multi-finger FET for High Frequency
10/29/2009DE102009016680A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
10/29/2009DE102008059984A1 Siliziumkarbid-Halbleitervorrichtung, welche eine Siliziumkarbid-Schicht enthält, und Verfahren zu deren Herstellung Silicon carbide semiconductor device containing a silicon carbide layer, and process for their preparation
10/29/2009DE102006019934B4 Verfahren zur Ausbildung eines Feldeffekttransistors A method of forming a field effect transistor
10/29/2009DE102004027065B4 Verfahren zur Herstellung einer übereinander geschichteten Gate-Struktur sowie eines damit ausgestatteten Feldeffekttransistors A process for producing a stacked gate structure and a field effect transistor equipped therewith
10/28/2009EP2112695A1 ZnO SEMICONDUCTOR ELEMENT
10/28/2009EP2112687A2 Method for fabricating a dual workfunction semiconductor device and the device made thereof
10/28/2009EP2112686A2 Method for fabricating a dual workfunction semiconductor device made thereof
10/28/2009EP2112489A2 Pressure sensor, manufacturing method thereof, and electronic component provided therewith
10/28/2009EP2111642A1 Organic transistor and method for fabricating the same
10/28/2009EP1493159B1 Refresh scheme for dynamic page programming
10/28/2009EP1259989B1 Monolithically integrated semiconductor component
10/28/2009CN101569016A Semiconductor device and method for manufacturing the same
10/28/2009CN101569015A Semiconductor device and method for manufacturing the same
10/28/2009CN101569014A Schottky barrier diode
10/28/2009CN101569001A Method for manufacturing flexible semiconductor device and flexible semiconductor device
10/28/2009CN101567422A Method for forming electronic device, electronic device and electronic switch device
10/28/2009CN101567417A Nitride-based semiconductor device and method of manufacturing the same
10/28/2009CN101567394A Vertical surrounding grid junction type field effect transistor, preparation method and applications thereof
10/28/2009CN101567393A Method and structure for semiconductor charge storage device
10/28/2009CN101567392A Thin-film transistor
10/28/2009CN101567391A Structure of thin film transistor
10/28/2009CN101567390A Transparent oxide semiconductor thin film transistor and manufacturing method thereof
10/28/2009CN101567389A P-channel power MIS field effect transistor and switching circuit
10/28/2009CN101567388A P-channel power MIS field effect transistor and switching circuit
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