Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2009
10/20/2009US7605433 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
10/20/2009US7605432 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
10/20/2009US7605430 Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same
10/20/2009US7605429 Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement
10/20/2009US7605426 Power semiconductor device
10/20/2009US7605425 Power MOS device
10/20/2009US7605424 Semiconductor device and method of manufacturing semiconductor device
10/20/2009US7605423 Semiconductor device
10/20/2009US7605422 Semiconductor device
10/20/2009US7605421 Non-volatile semiconductor memory element and method of manufacturing the same, and semiconductor integrated circuit device including the non-volatile semiconductor memory element
10/20/2009US7605420 Semiconductor tunneling magneto resistance device and method of manufacturing the same
10/20/2009US7605418 Methods of fabricating capacitor
10/20/2009US7605417 Assemblies comprising magnetic elements and magnetic barrier or shielding at least partially around the magnetic elements
10/20/2009US7605416 Thin film translator array panel and a method for manufacturing the panel
10/20/2009US7605414 MOS transistors having low-resistance salicide gates and a self-aligned contact between them
10/20/2009US7605413 High voltage devices
10/20/2009US7605412 Distributed high voltage JFET
10/20/2009US7605411 Charge transfer device and imaging apparatus
10/20/2009US7605410 Semiconductor device and manufacturing method thereof
10/20/2009US7605408 Apparatus, method and system for reconfigurable circuitry
10/20/2009US7605407 Composite stressors with variable element atomic concentrations in MOS devices
10/20/2009US7605406 Rear-illuminated-type photodiode array
10/20/2009US7605405 Semiconductor light emitting device having first and second resins
10/20/2009US7605404 Image pickup device and method of manufacturing the same
10/20/2009US7605403 Semiconductor light-emitting device and fabrication method of the same
10/20/2009US7605401 Semiconductor device and fabrication method thereof
10/20/2009US7605400 Method for fabricating liquid crystal display device
10/20/2009US7605399 Thin film transistor
10/20/2009US7605397 Capacitive bypass
10/20/2009US7605396 Field effect type organic transistor and process for production t hereof
10/20/2009US7605392 Field effect transistor and production process thereof
10/20/2009US7605391 Optically coupled resonator
10/20/2009US7605077 Dual metal integration scheme based on full silicidation of the gate electrode
10/20/2009US7605064 Selective laser annealing of semiconductor material
10/20/2009US7605061 Semiconductor device and method of manufacturing the semiconductor device
10/20/2009US7605052 Method of forming an integrated circuit having a device wafer with a diffused doped backside layer
10/20/2009US7605049 Optical semiconductor device and manufacturing method for same
10/20/2009US7605041 Semiconductor device and its manufacture method
10/20/2009US7605040 Method of forming high breakdown voltage low on-resistance lateral DMOS transistor
10/20/2009US7605034 Integrated circuit memory cells and methods of forming
10/20/2009US7605032 Method for producing a trench transistor and trench transistor
10/20/2009US7605029 Method of manufacturing semiconductor device
10/20/2009US7605028 Method of forming a memory device having a storage transistor
10/20/2009US7605026 Self-aligned transparent metal oxide TFT on flexible substrate
10/20/2009US7605025 Methods of forming MOSFETS using crystalline sacrificial structures
10/20/2009US7605023 Manufacturing method for a semiconductor device and heat treatment method therefor
10/20/2009US7605007 Semiconductor device and method of manufacturing the same
10/20/2009US7604928 Patterning method and methods for producing electro-optic device, color filter, illuminant, and thin-film transistor
10/20/2009US7604922 Reciprocating device; mercury lamps
10/15/2009WO2009126412A1 Method of creating alignment/centering guides for small diameter, high density through-wafer via die stacking
10/15/2009WO2009126382A2 Supercapacitors and methods of making and using same
10/15/2009WO2009126201A1 A low switching current mtj element for ultra-high stt-ram and a method for making the same
10/15/2009WO2009125721A1 Chemical compound used for organic thin film transistor and organic thin film transistor
10/15/2009WO2009125705A1 Compound for organic thin-film transistor and organic thin-film transistor using the compound
10/15/2009WO2009125704A1 Compound for organic thin-film transistor and organic thin-film transistor using the compound
10/15/2009WO2009125510A1 Acceleration sensor
10/15/2009WO2009125509A1 Crystalline semiconductor stripe transistor and method for fabricating thereof
10/15/2009WO2009125459A1 Semiconductor device and method for manufacturing same
10/15/2009WO2009125422A1 A sub-threshold forced plate fet sensor for sensing inertial displacements, a method and system thereof
10/15/2009WO2009102651A3 Edge termination with improved breakdown voltage
10/15/2009WO2009094376A3 Method for forming strained channel pmos devices and integrated circuits therefrom
10/15/2009WO2008137480A3 Active area junction isolation structure and junction isolated transistors including igfet, jfet and mos transistors and method for making
10/15/2009US20090258450 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same
10/15/2009US20090258238 Silicide formation utilizing ni-doped cobalt deposition source
10/15/2009US20090257283 Method for deleting data from nand type nonvolatile memory
10/15/2009US20090257270 Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
10/15/2009US20090257249 Semiconductor device, and energy transmission device using the same
10/15/2009US20090257171 Coating Liquid for Manufacturing Electrode Plate, Undercoating Agent, and Use Therof
10/15/2009US20090256983 LCD with increased pixel opening sizes
10/15/2009US20090256980 Active matrix substrate and liquid crystal display device
10/15/2009US20090256624 Antifuse and methods of operating and manufacturing the same
10/15/2009US20090256559 Hall effect device and method
10/15/2009US20090256469 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same
10/15/2009US20090256467 Light emitting apparatus and method for manufacturing the same
10/15/2009US20090256260 Semiconductor device
10/15/2009US20090256241 Thin silicon wafer and method of manufacturing the same
10/15/2009US20090256240 Method for producing group iii-nitride wafers and group iii-nitride wafers
10/15/2009US20090256238 Capacitor of Semiconductor Device and Method of Fabricating the Same
10/15/2009US20090256232 Semiconductor device and fabrication method for the same
10/15/2009US20090256221 Method for making very small isolated dots on substrates
10/15/2009US20090256220 Low switching current MTJ element for ultra-high STT-RAM and a method for making the same
10/15/2009US20090256219 Method for manufacturing a semiconductor component, as well as a semiconductor component, in a particular a diaphragm sensor
10/15/2009US20090256218 Mems device having a layer movable at asymmetric rates
10/15/2009US20090256216 Wafer Level CSP Sensor
10/15/2009US20090256214 Semiconductor device and associated methods
10/15/2009US20090256213 Structure and method for manufacturing device with a v-shape channel nmosfet
10/15/2009US20090256212 Lateral drain-extended mosfet having channel along sidewall of drain extension dielectric
10/15/2009US20090256211 Metal gate compatible flash memory gate stack
10/15/2009US20090256208 Semiconductor device and method of fabricating the same
10/15/2009US20090256206 P-Channel germanium on insulator (GOI) one transistor memory cell
10/15/2009US20090256205 2-t sram cell structure and method
10/15/2009US20090256204 Soi transistor with merged lateral bipolar transistor
10/15/2009US20090256203 Top Gate Thin Film Transistor with Independent Field Control for Off-Current Suppression
10/15/2009US20090256202 Semiconductor-on-insulator device structures with a body-to-substrate connection for enhanced electrostatic discharge protection, and design structures for such semiconductor-on-insulator device structures
10/15/2009US20090256200 Disconnected DPW Structures for Improving On-State Performance of MOS Devices
10/15/2009US20090256199 lateral metal oxide semiconductor drain extension design
10/15/2009US20090256196 Three-dimensional semiconductor device structures and methods
10/15/2009US20090256195 Semiconductor device and method of manufacturing the same
10/15/2009US20090256194 Semiconductor device with reduced resistance of bit lines and method for manufacturing the same
10/15/2009US20090256193 Semiconductor device and a method of manufacturing the same
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