Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2009
10/01/2009US20090242954 Memory device and fabrication thereof
10/01/2009US20090242947 Semiconductor device and fabrication method for the semiconductor device
10/01/2009US20090242946 Semiconductor device and fabrication method for the semiconductor device
10/01/2009US20090242945 Semiconductor device and method of fabricating the same
10/01/2009US20090242944 Method of forming a semiconductor device using stress memorization
10/01/2009US20090242943 Semiconductor device
10/01/2009US20090242942 Asymmetric source and drain field effect structure and method
10/01/2009US20090242941 Structure and method for manufacturing device with a v-shape channel nmosfet
10/01/2009US20090242940 Sensor device and fabrication method for the same
10/01/2009US20090242938 Field effect transistor
10/01/2009US20090242937 Semiconductor device and manufacturing method
10/01/2009US20090242936 Strained ultra-thin soi transistor formed by replacement gate
10/01/2009US20090242931 Semiconductor device having IGBT and diode
10/01/2009US20090242930 Semiconductor device
10/01/2009US20090242901 SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF
10/01/2009US20090242900 Memory device and method of manufacturing the same
10/01/2009US20090242899 Epitaxial Growth on Low Degree Off-Axis SiC Substrates and Semiconductor Devices Made Thereby
10/01/2009US20090242898 Method of controlling stress in gallium nitride films deposited on substrates
10/01/2009US20090242896 Semiconductor device and method for manufacturing the same
10/01/2009US20090242895 Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same
10/01/2009US20090242894 Thin-Film-Transistor Structure, Pixel Structure and Manufacturing Method Thereof
10/01/2009US20090242893 Semiconductor device, production method thereof, and display device
10/01/2009US20090242892 Semiconductor device and method for forming the same
10/01/2009US20090242891 Thin-film semiconductor device and method for manufacturing the same
10/01/2009US20090242890 Semiconductor device, electrooptical apparatus, and electronic system
10/01/2009US20090242889 Thin film transistor, method for manufacturing the same, and display
10/01/2009US20090242886 Thin film transistor substrate
10/01/2009US20090242884 Method of producing display device, display device, method of producing thin-film transistor substrate, and thin-film transistor substrate
10/01/2009US20090242882 Three-dimensional microstructures and methods for making same
10/01/2009US20090242880 Thermally stabilized electrode structure
10/01/2009US20090242873 Semiconductor heterostructures to reduce short channel effects
10/01/2009US20090242872 Double quantum well structures for transistors
10/01/2009US20090242869 Super lattice/quantum well nanowires
10/01/2009US20090241671 Acceleration sensor
10/01/2009US20090241670 Semiconductor acceleration sensor
10/01/2009DE10354866B4 Verfahren zum Herstellen einer Flüssigkristallanzeigevorrichtung A method of manufacturing a liquid crystal display device
10/01/2009DE102009015322A1 Schalterschaltung Switch circuit
10/01/2009DE102009014583A1 Siliziumcarbid-MOS-Halbleitervorrichtung Silicon carbide MOS semiconductor device
10/01/2009DE102009011450A1 Diode Diode
10/01/2009DE102009010174A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
10/01/2009DE102009008504A1 Ein Halbleiterbauelement und Verfahren A semiconductor device and method
10/01/2009DE102008032318A1 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen The optoelectronic semiconductor chip and method for producing such
10/01/2009DE102008016439A1 SOI-Transistor mit potentialfreiem Körper für die Informationsspeicherung mit asymmetrischen Drain/Source-Gebieten SOI transistor with a floating body for information storage with asymmetrical drain / source regions
10/01/2009DE102008015211A1 Measuring arrangement i.e. semiconductor arrangement, has measuring unit whose input connected with substrate, another input connected with doped region, and output for providing measurement value that is proportional to defect
10/01/2009DE102008008498A1 Punch-through-trend reducing method for semiconductor device, involves forming doped region adjacent to another doped region with dopant e.g. antimony, where doped regions are electrically isolated against each other
10/01/2009DE102005019552B4 Verfahren zum Herstellen eines Flash-Speichers A method of manufacturing a flash memory
10/01/2009DE102004063143B4 Dummy-Schicht bei einem Halbleiter-Bauelement und Herstellungsverfahren dafür Dummy layer in a semiconductor device and manufacturing method thereof
09/2009
09/30/2009EP2105977A1 Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element
09/30/2009EP2105967A1 Thin film field effect transistor and display
09/30/2009EP2105966A2 Semiconductor TFT device and method of fabricating same
09/30/2009EP1680816B1 Power surface mount light emitting die package
09/30/2009EP1396029B1 Manufacturing method for a dual gate logic device
09/30/2009EP1345260B1 Vapor growth method, semiconductor producing method, and production method for semiconductor device
09/30/2009CN101548390A Fully and uniformly silicided gate structure and method for forming same
09/30/2009CN101548389A Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus
09/30/2009CN101548388A Method for manufacturing thin film transistor which uses an oxide semiconductor
09/30/2009CN101548387A Silicon carbide semiconductor device and method for producing the same
09/30/2009CN101548386A Insulating-gate fet and its manufacturing method
09/30/2009CN101548385A Single-wafer process for fabricating nonvolatile charge trap memory device
09/30/2009CN101548384A Low defect si:c layer with retrograde carbon profile
09/30/2009CN101546988A Noise filter and noise-filter-incorporated amplifier circuit
09/30/2009CN101546785A Integrated circuit structure
09/30/2009CN101546784A Non-volatile memory cells, memory arrays including the same
09/30/2009CN101546783A Semiconductor device and method for manufacturing a semiconductor device
09/30/2009CN101546782A Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device
09/30/2009CN101546781A Semiconductor device
09/30/2009CN101546776A Circuit structure of CMOS image sensor and manufacturing method thereof
09/30/2009CN101546775A Semiconductor device, electrooptical apparatus, and electronic apparatus
09/30/2009CN101546773A Nand-type nonvolatile semiconductor memory device
09/30/2009CN101546772A Semiconductor device including capacitor element and method of manufacturing the same
09/30/2009CN101546771A Semiconductor device and method of manufacturing the same
09/30/2009CN101546770A Semiconductor device and manufacturing method of same
09/30/2009CN101546768A Inverter and logic circuit including an inverter
09/30/2009CN101546767A Self-shutoff thyristor capable of reducing on-state power consumption
09/30/2009CN101546766A High power and high temperature semiconductor power devices protected by non-uniform ballasted sources
09/30/2009CN101546765A High-frequency integrated circuit
09/30/2009CN101546760A Inverse parallel double diode
09/30/2009CN101546717A Method and apparatus for applying heat-conducting silicone grease on semiconductor devices
09/30/2009CN101546710A Multi-gate field effect transistor and method for manufacturing the same
09/30/2009CN101546516A Display device
09/30/2009CN101546077A Pixel structure of thin film transistor-liquid crystal display and manufacturing method thereof
09/30/2009CN101546075A Multi-domain vertical alignment (MVA) pixel structure
09/30/2009CN101546074A Liquid crystal display and pixel structure thereof
09/30/2009CN101545920A Acceleration sensor
09/30/2009CN101545919A Acceleration sensor configuration and its manufacturing method
09/30/2009CN101545136A Micro-heater arrays and PN-junction devices having micro-heater arrays, and methods for fabricating the same
09/30/2009CN100546048C MIM capacitor device and method of making same
09/30/2009CN100546047C Structures for planar and multiple-gate transistors formed on SOI and its manufacture method
09/30/2009CN100546046C Trench insulated gate field effect transistor
09/30/2009CN100546045C Trench insulated gate field effect transistor
09/30/2009CN100546044C One transistor DRAM cell structure and method for forming
09/30/2009CN100546042C Semiconductor memory device with increased node capacitance
09/30/2009CN100546032C Semiconductor device comprising a field-effect transistor and method of operating the same
09/30/2009CN100546025C Semiconductor device and manufacture method thereof
09/30/2009CN100545720C Display device
09/29/2009US7596018 Spin memory with write pulse
09/29/2009US7595932 Laser irradiation method and laser irradiation apparatus
09/29/2009US7595849 Display device and manufacturing method thereof
09/29/2009US7595562 Device package structure, device packaging method, droplet ejection head, connector, and semiconductor device
09/29/2009US7595558 Semiconductor device and method of manufacturing the same
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