Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2009
11/03/2009US7612860 Color filter on thin film transistor type liquid crystal display device and method of fabricating the same with an alignment key formed with the orientation layer
11/03/2009US7612855 Liquid crystal display device
11/03/2009US7612838 Thin film transistor array substrate, liquid crystal display panel having the same, and method of manufacturing thin film transistor array substrate and liquid crystal display panel
11/03/2009US7612749 Driving circuits for displays
11/03/2009US7612456 Electronic device, semiconductor device using same, and method for manufacturing semiconductor device
11/03/2009US7612455 Layered structure for electron device including regions of different wettability, electron device and electron device array that uses such a layered structure
11/03/2009US7612451 Reducing resistivity in interconnect structures by forming an inter-layer
11/03/2009US7612450 Semiconductor package including dummy board and method of fabricating the same
11/03/2009US7612438 Active matrix substrate with height control member
11/03/2009US7612434 Electronic device having wiring substrate and lead frame
11/03/2009US7612433 Semiconductor device having self-aligned contact
11/03/2009US7612432 metallic sulfides contains zinc, copper, Cd, Hg and alkaline earth metals, Se, Te; doped; light emitting device; ohmic contactor to a metallic material; low resistance
11/03/2009US7612430 Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor
11/03/2009US7612429 Chip resistor, process for producing the same, and frame for use therein
11/03/2009US7612428 Inductor fabricated with dry film resist and cavity and method of fabricating the inductor
11/03/2009US7612426 Schottky barrier diode and diode array
11/03/2009US7612424 Nanoelectromechanical bistable cantilever device
11/03/2009US7612423 Signal-carrying flexure structure for micro-electromechanical devices
11/03/2009US7612421 Electronic device with dopant diffusion barrier and tunable work function and methods of making same
11/03/2009US7612418 Monolithic power semiconductor structures including pairs of integrated devices
11/03/2009US7612417 Semiconductor integrated circuit device
11/03/2009US7612416 Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same
11/03/2009US7612415 Method of forming semiconductor device
11/03/2009US7612411 Dual-gate device and method
11/03/2009US7612410 Trigger device for ESD protection circuit
11/03/2009US7612408 MOS transistor device
11/03/2009US7612406 Transistor, memory cell array and method of manufacturing a transistor
11/03/2009US7612405 Fabrication of FinFETs with multiple fin heights
11/03/2009US7612404 Semiconductor device
11/03/2009US7612403 Low power non-volatile memory and gate stack
11/03/2009US7612402 Nonvolatile memory semiconductor device and manufacturing method thereof
11/03/2009US7612401 Non-volatile memory cell
11/03/2009US7612397 Memory cell having first and second capacitors with electrodes acting as control gates for nonvolatile memory transistors
11/03/2009US7612393 Active photosensitive structure with buried depletion layer
11/03/2009US7612390 Heterojunction transistors including energy barriers
11/03/2009US7612389 Embedded SiGe stressor with tensile strain for NMOS current enhancement
11/03/2009US7612388 Power semiconductor element with an emitter region and a stop zone in front of the emitter region
11/03/2009US7612387 Thyristor optimized for a sinusoidal HF control
11/03/2009US7612385 High power light-emitting diode package comprising substrate having beacon
11/03/2009US7612383 Reflector packages and semiconductor light emitting devices including the same
11/03/2009US7612379 Multi-gate thin film transistor having recrystallized channel regions with different grain sizes
11/03/2009US7612378 Semiconductor device with multiple impurity regions and image display apparatus
11/03/2009US7612377 Thin film transistor array panel with enhanced storage capacitors
11/03/2009US7612376 Semiconductor device
11/03/2009US7612375 Semiconductor device and method for fabricating the same
11/03/2009US7612374 TFT containing coalesced nanoparticles
11/03/2009US7612372 Method and system for laser thermal processing of semiconductor devices
11/03/2009US7612369 Memory device having a semiconducting polymer film
11/03/2009US7612366 Semiconductor device including a strained superlattice layer above a stress layer
11/03/2009US7612364 MOS devices with source/drain regions having stressed regions and non-stressed regions
11/03/2009US7612363 N-type group III nitride semiconductor stacked layer structure
11/03/2009US7612360 Non-volatile memory devices having cell diodes
11/03/2009US7612359 Microelectronic devices using sacrificial layers and structures fabricated by same
11/03/2009US7612358 Nonvolatile nanochannel memory device using mesoporous material
11/03/2009US7611973 Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same
11/03/2009US7611956 Semiconductor device having MOS varactor and methods for fabricating the same
11/03/2009US7611954 Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same
11/03/2009US7611953 Bipolar transistor with isolation and direct contacts
11/03/2009US7611942 Semiconductor integrated circuit device and a method of manufacturing the same
11/03/2009US7611934 Semiconductor device and method of fabricating the same
11/03/2009US7611925 Electronic device and method of manufacturing the same, chip carrier, circuit board, and electronic instrument
11/03/2009US7611577 Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor
11/03/2009US7611393 Electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving
11/03/2009CA2376564C Semi-insulating silicon carbide without vanadium domination
10/2009
10/29/2009WO2009132162A2 Integrated low leakage schottky diode
10/29/2009WO2009132039A2 Enhancement mode iii-n hemts
10/29/2009WO2009132004A2 Multi-rate resist method to form organic tft electrode and electrodes formed by same
10/29/2009WO2009131169A1 Al ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET
10/29/2009WO2009131051A1 Semiconductor device and method for manufacturing the same
10/29/2009WO2009131035A1 Thin-film transistor manufacturing method, and thin-film transistor
10/29/2009WO2009130922A1 Active matrix substrate, liquid crystal panel, liquid crystal display device, liquid crystal display unit, and television receiver
10/29/2009WO2009130841A1 Method for manufacturing thin film transistor substrate
10/29/2009WO2009130822A1 Multilayer wiring, semiconductor device, substrate for display and display
10/29/2009WO2009130746A1 Method for manufacturing thin film transistor substrate
10/29/2009WO2009130738A1 Ferromagnetic thin wire element
10/29/2009WO2009130648A1 Semiconductor devices including a field reducing structure and methods of manufacture thereof
10/29/2009WO2009130629A1 A fin fet and a method of manufacturing a fin fet
10/29/2009WO2009130058A1 Method for producing a semiconductor device with an insulating layer applied in situ
10/29/2009WO2009108002A3 Organic thin film transistor and a manufacturing method thereof
10/29/2009WO2009106328A8 Iii-v nitride semiconductor device comprising a diamond layer
10/29/2009US20090269929 Non-plasma capping layer for interconnect applications
10/29/2009US20090269911 Non-volatile memory and method of manufacturing the same
10/29/2009US20090269907 Semiconductor device and method of manufacturing the same
10/29/2009US20090269893 Semiconductor integrated circuit device and method of producing the same
10/29/2009US20090269892 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
10/29/2009US20090269878 Embedded waveguide detectors
10/29/2009US20090269868 Methods of Manufacture for Quantum Dot optoelectronic devices with nanoscale epitaxial lateral overgrowth
10/29/2009US20090268526 Semiconductor memory device with a stacked gate including a charge storage layer and a control gate and method of controlling the same
10/29/2009US20090268525 Nonvolatile semiconductor memory device
10/29/2009US20090268519 Semiconductor integrated circuit device and data processor device
10/29/2009US20090268518 Novel Multi-State Memory
10/29/2009US20090268508 Reverse leakage reduction and vertical height shrinking of diode with halo doping
10/29/2009US20090268148 Liquid crystal display device
10/29/2009US20090267200 Method for manufacturing a semiconductor substrate including laser annealing
10/29/2009US20090267198 Semiconductor device, method for manufacturing semiconductor device and apparatus for manufacturing semiconductor
10/29/2009US20090267196 High performance 3d fet structures, and methods for forming the same using preferential crystallographic etching
10/29/2009US20090267195 Semiconductor element and method for manufacturing semiconductor element
10/29/2009US20090267192 Cmp methods avoiding edge erosion and related wafer
10/29/2009US20090267191 Semiconductor device and process for producing the same
10/29/2009US20090267190 Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate
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