Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2009
10/27/2009US7608467 Switchable resistive perovskite microelectronic device with multi-layer thin film structure
10/25/2009CA2663779A1 Freestanding iii-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate
10/22/2009WO2009129391A2 Low temperature thin film transistor process, device property, and device stability improvement
10/22/2009WO2009129049A2 Methods of making lateral junction field effect transistors using selective epitaxial growth
10/22/2009WO2009128954A1 Applying trenched transient voltage suppressors (tvs) technology for distributed low pass filters
10/22/2009WO2009128828A1 Selective functionalization of doped group iv surfaces using lewis acid / lewis base interaction
10/22/2009WO2009128777A1 Nanowire wrap gate devices
10/22/2009WO2009128776A1 Hybrid wafers with hybrid-oriented layer
10/22/2009WO2009128553A1 Thin film transistor and method for manufacturing the same
10/22/2009WO2009128542A1 Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device
10/22/2009WO2009128522A1 Thin film transistor and method for manufacturing the same
10/22/2009WO2009128424A1 Thin film transistor type substrate, thin film transistor type liquid crystal display device and method for manufacturing thin film transistor type substrate
10/22/2009WO2009128419A1 Semiconductor device
10/22/2009WO2009128382A1 Semiconductor device and method for manufacturing the same
10/22/2009WO2009128372A1 Thin film transistor and method for manufacturing thin film transistor
10/22/2009WO2009128337A1 Semiconductor device and method for manufacturing the same
10/22/2009WO2009128133A1 Antiferroelectric gate transistor and manufacturing method thereof, and non-volatile memory element
10/22/2009WO2009128084A1 A sub-threshold elastic deflection fet sensor for sensing pressure/force, a method and system thereof
10/22/2009WO2009128035A1 High frequency field-effect transistor
10/22/2009WO2009127884A1 Memory devices using proton-conducting polymeric materials
10/22/2009WO2009102963A3 Field effect transistor
10/22/2009WO2009055572A3 Semiconductor structure and method of manufacture
10/22/2009WO2008116040A9 Termination and contact structures for a high voltage gan-based heterojunction transistor
10/22/2009US20090263978 Laser mask and crystallization method using the same
10/22/2009US20090263943 Method of fabricating semiconductor integrated circuit device
10/22/2009US20090263941 Multi-channel type thin film transistor and method of fabricating the same
10/22/2009US20090263933 Field effect transistor and method of producing same
10/22/2009US20090263929 Methods for producing solid-state imaging device and electronic device
10/22/2009US20090262583 Floating gate memory device with interpoly charge trapping structure
10/22/2009US20090262559 Semiconductor device, and energy transmission device using the same
10/22/2009US20090262293 Liquid crystal display device and method of fabricating the same
10/22/2009US20090262270 Liquid crystal display device
10/22/2009US20090261457 Die stacking with an annular via having a recessed socket
10/22/2009US20090261456 Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
10/22/2009US20090261452 Semiconductor device including an inductor element
10/22/2009US20090261451 Circuit protection device including resistor and fuse element
10/22/2009US20090261446 Semiconductor structure and method of manufacture
10/22/2009US20090261436 Negative-resistance device with the use of magneto-resistive effect
10/22/2009US20090261435 Magnetic memory element and magnetic memory device
10/22/2009US20090261434 STT MRAM Magnetic Tunnel Junction Architecture and Integration
10/22/2009US20090261433 One-Mask MTJ Integration for STT MRAM
10/22/2009US20090261432 Interconnection system on a plane adjacent to a solid-state device structure
10/22/2009US20090261431 Pre-released structure device
10/22/2009US20090261430 Physical quantity sensor and method for manufacturing the same
10/22/2009US20090261429 Transistor and method for manufacturing thereof
10/22/2009US20090261428 Mos p-n junction schottky diode device and method for manufacturing the same
10/22/2009US20090261427 Mos p-n junction diode device and method for manufacturing the same
10/22/2009US20090261426 Lateral diffusion field effect transistor with drain region self-aligned to gate electrode
10/22/2009US20090261425 FINFETs SINGLE-SIDED IMPLANT FORMATION
10/22/2009US20090261420 Recess gate transistor
10/22/2009US20090261419 Semiconductor device having assist features and manufacturing method thereof
10/22/2009US20090261414 Semiconductor Device and Method for Manufacturing the Same
10/22/2009US20090261412 Semiconductor Device and Manufacturing Method of the Same
10/22/2009US20090261411 Integrated circuit including a body transistor and method
10/22/2009US20090261410 Dmos transistor
10/22/2009US20090261409 Semiconductor devices for high power application
10/22/2009US20090261408 Semiconductor device and method of forming the same
10/22/2009US20090261407 Semiconductor device and manufacturing method of the same
10/22/2009US20090261406 Use of silicon-rich nitride in a flash memory device
10/22/2009US20090261405 Non-Volatile Memory Devices
10/22/2009US20090261404 Non-volatile Memory Device
10/22/2009US20090261403 Semiconductor device and method of manufacturing the same
10/22/2009US20090261402 Method and structure for a semiconductor charge storage device
10/22/2009US20090261401 Non-volatile memory cell and method of fabricating the same
10/22/2009US20090261400 Semiconductor device and method of manufacturing the same
10/22/2009US20090261399 Nonvolatile semiconductor memory device and manufacturing method thereof
10/22/2009US20090261398 Non-volatile memory with sidewall channels and raised source/drain regions
10/22/2009US20090261391 Complementary Metal Oxide Semiconductor Integrated Circuit Using Raised Source Drain and Replacement Metal Gate
10/22/2009US20090261390 semiconductor memory device and a method of manufacturing the same
10/22/2009US20090261389 Composition for oxide semiconductor thin film, field effect transistor using the composition, and method of fabricating the transistor
10/22/2009US20090261388 Dice by grind for back surface metallized dies
10/22/2009US20090261387 CMOS integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining
10/22/2009US20090261386 Semiconductor integrated circuit device and method of arranging wirings in the semiconductor integrated circuit device
10/22/2009US20090261385 Bipolar transistor with enhanced base transport
10/22/2009US20090261384 Gallium nitride high electron mobility transistor having inner field-plate for high power applications
10/22/2009US20090261383 Optical device having strained buried channel
10/22/2009US20090261382 Compound Semiconductor Substrate For a Field Effect Transistor
10/22/2009US20090261380 Transistors having asymetric strained source/drain portions
10/22/2009US20090261379 Semiconductor device with a semiconductor body and method for its production
10/22/2009US20090261378 Devices with adjustable dual-polarity trigger - and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal cmos/bicmos integrated
10/22/2009US20090261372 Semiconductor light emitting device and method for fabricating the same
10/22/2009US20090261369 Light-Emitting Device and Manufacturing Method Thereof
10/22/2009US20090261362 4h-polytype gallium nitride-based semiconductor device on a 4h-polytype substrate
10/22/2009US20090261359 Semiconductor device and fabrication method thereof
10/22/2009US20090261355 Thin film transistor
10/22/2009US20090261351 Silicon Carbide Devices Having Smooth Channels
10/22/2009US20090261350 Silicon carbide semiconductor device including deep layer
10/22/2009US20090261349 Semiconductor device with strained channel and method of fabricating the same
10/22/2009US20090261348 Semiconductor device and semiconductor device manufacturing method
10/22/2009US20090261347 Diamond semiconductor element and process for producing the same
10/22/2009US20090261345 Method for manufacturing compliant substrate, compliant substrate manufactured thereby, gallium nitride based compound semiconductor device having the compliant substrate and manufacturing method thereof
10/22/2009US20090261344 Relaxation of a strained layer using a molten layer
10/22/2009US20090261343 High-density nonvolatile memory and methods of making the same
10/22/2009US20090261340 Display substrate, liquid crystal display device having the same and method of manufacturing a display substrate
10/22/2009US20090261338 Active matrix substrate, display device, and television receiver
10/22/2009US20090261337 Semiconductor device
10/22/2009US20090261335 Pixel Unit Structure of Self-Illumination Display with Low-Reflection
10/22/2009US20090261334 Liquid crystal display device
10/22/2009US20090261331 Low temperature thin film transistor process, device property, and device stability improvement
10/22/2009US20090261330 Thin film transistor and manufacturing method thereof
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