Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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01/05/2012 | US20120001171 Semiconductor Structures with Rare-earths |
01/05/2012 | US20120001170 Semiconductor device |
01/05/2012 | US20120001169 Semiconductor device and manufacturing method thereof |
01/05/2012 | US20120001168 Semiconductor device |
01/05/2012 | US20120001167 Thin film transistor and display device |
01/05/2012 | US20120001159 Insulating layer, organic thin film transistor using the insulating layer, and method of fabricating the organic thin film transistor |
01/05/2012 | US20120001153 PULSED GROWTH OF CATALYST-FREE GROWTH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
01/05/2012 | US20120001150 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same |
01/05/2012 | US20120000274 Ion-sensing charge-accumulation circuits and methods |
01/05/2012 | DE102010030768A1 Transistor mit eingebettetem Si/Ge-Material mit geringerem Abstand und besserer Gleichmäßigkeit Transistor with embedded Si / Ge material at a shorter distance and better uniformity |
01/05/2012 | DE102010030756A1 Austauschgateverfahren für Metallgatestapel mit großem ε auf der Grundlage eines nicht-konformen Zwischenschichtdielektrikums Replacement gate process for metal gate stack with large ε, based on a non-conformal interlevel |
01/05/2012 | DE102010026098A1 Ionisch gesteuertes Dreitorbauelement Ionic controlled Dreitorbauelement |
01/05/2012 | DE102005056703B4 TFT - Arraysubstrat und zugehöriges Herstellungsverfahren TFT - array substrate and manufacturing method thereof |
01/05/2012 | DE102004041831B4 Integriertes Schaltkreisbauelement mit E/A-ESD-Schutzzelle Integrated circuit device with I / O ESD protection cell |
01/04/2012 | EP2403006A1 HETERO Pn JUNCTION SEMICONDUCTOR AND PROCESS FOR PRODUCING SAME |
01/04/2012 | EP2402999A1 Semiconductor component, method of producing a semiconductor component, semiconductor device |
01/04/2012 | EP2402998A1 P-channel LDMOS transistor and method of producing a p-channel LDMOS transistor |
01/04/2012 | EP2402997A1 Power semiconductor device |
01/04/2012 | EP2402996A1 A device comprising an active component and associated electrodes and a method of manufacturing such device |
01/04/2012 | EP2402348A1 Field effect transistor |
01/04/2012 | EP2401764A1 Method for manufacturing nano electronic devices made from 2d carbon crystals like graphene and devices obtained with this method |
01/04/2012 | EP1898460B1 Semiconductor device and fabrication method thereof |
01/04/2012 | EP1287562B1 Method of making a power MOSFET |
01/04/2012 | CN202103057U Large-power chip-type diode |
01/04/2012 | CN202103056U Multi-chip diode with protection function |
01/04/2012 | CN202103055U 10-ampere silicon rectifying diode |
01/04/2012 | CN202103054U High voltage driving circuit isolation structure |
01/04/2012 | CN1841779B Thin film transistor, thin film transistor panel, and method of manufacturing the same |
01/04/2012 | CN102308593A Microphone unit |
01/04/2012 | CN102308390A Semiconductor heterostructure diodes |
01/04/2012 | CN102308389A Semiconductor device |
01/04/2012 | CN102308388A Apparatus and methods for improving parallel conduction in a quantum well device |
01/04/2012 | CN102308387A III-nitride devices and circuits |
01/04/2012 | CN102308386A Micro-electrode array package using liquid crystal polymer and manufacturing method thereof |
01/04/2012 | CN102308202A TFT array inspection method and TFT array inspection apparatus |
01/04/2012 | CN102308018A Device and method for deposition of microstructure |
01/04/2012 | CN102306663A JEET (junction field-effect transistor) and formation method thereof |
01/04/2012 | CN102306662A Terminal structure of super junction vertical dual-diffusion metal oxide field effect transistor |
01/04/2012 | CN102306661A LDMOS (laterally diffused metal oxide semiconductor) transistor structure and formation method thereof |
01/04/2012 | CN102306660A MOS (metal oxide semiconductor) device structure and manufacturing method thereof |
01/04/2012 | CN102306659A LDMOS (laterally double-diffused metal-oxide-semiconductor field effect transistor) device based on internal electric field modulation |
01/04/2012 | CN102306658A Wide bandgap transistor devices with field plates |
01/04/2012 | CN102306657A Insulated gate bipolar transistor with floating buried layer |
01/04/2012 | CN102306656A Isolation structure of high voltage driver circuit |
01/04/2012 | CN102306651A High-voltage vertical fet |
01/04/2012 | CN102304760A Composite substrate, preparation method of composite substrate and method for preparing single crystal thick film through hetero-epitaxy |
01/04/2012 | CN102054874B Thin film transistor and manufacturing method thereof |
01/04/2012 | CN101969062B Silicon N-type semiconductor combined device on insulator for improving current density |
01/04/2012 | CN101859797B Deep slot power semiconductor field effect transistor |
01/04/2012 | CN101859784B Photosensitive element, driving method thereof and liquid crystal display using photosensitive element |
01/04/2012 | CN101809726B Mosfet active area and edge termination area charge balance |
01/04/2012 | CN101789428B Embedded PMOS auxiliary trigger SCR structure |
01/04/2012 | CN101764150B Silicon-on-insulator lateral insulated gate bipolar transistor and process manufacturing method |
01/04/2012 | CN101714566B Sensor element and method of driving sensor element, and input device, display device with input function and communication device |
01/04/2012 | CN101685232B Array substrate, method of manufacturing the same and liquid crystal display apparatus having the same |
01/04/2012 | CN101661933B Semiconductor device and fabricating method for same |
01/04/2012 | CN101467262B Junction barrier schottky rectifiers and methods of making thereof |
01/04/2012 | CN101405865B Semiconductor device and manufacturing method thereof |
01/04/2012 | CN101258100B Microelectromechanical systems (MEMS) device including a superlattice and associated methods |
01/04/2012 | CN101246906B Gate pullback at ends of high-voltage vertical transistor structure |
01/04/2012 | CN101233615B Semiconductor element and electric device |
01/03/2012 | US8091143 Atomic force microscopy probe |
01/03/2012 | US8089385 D/A conversion circuit and semiconductor device |
01/03/2012 | US8089199 Mechanical design of laminar weak-link rotary mechanisms with ten-degree-level travel range and ten-nanoradian-level positioning resolution |
01/03/2012 | US8089164 Substrate having optional circuits and structure of flip chip bonding |
01/03/2012 | US8089162 Semiconductor device and method for manufacturing the same |
01/03/2012 | US8089159 Semiconductor package with increased I/O density and method of making the same |
01/03/2012 | US8089157 Contact metallurgy structure |
01/03/2012 | US8089156 Electrode structure for semiconductor chip with crack suppressing dummy metal patterns |
01/03/2012 | US8089149 Semiconductor device |
01/03/2012 | US8089145 Semiconductor device including increased capacity leadframe |
01/03/2012 | US8089138 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device |
01/03/2012 | US8089137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method |
01/03/2012 | US8089136 Semiconductor device |
01/03/2012 | US8089131 Micro movable device |
01/03/2012 | US8089130 Semiconductor device and process for reducing damaging breakdown in gate dielectrics |
01/03/2012 | US8089124 Lateral DMOS device and method for fabricating the same |
01/03/2012 | US8089123 Semiconductor device comprising transistor structures and methods for forming same |
01/03/2012 | US8089122 Vertical trench gate transistor semiconductor device and method for fabricating the same |
01/03/2012 | US8089120 Semiconductor memory device |
01/03/2012 | US8089119 Semiconductor memory device and write method of the same |
01/03/2012 | US8089118 Method for selective gate halo implantation in a semiconductor die and related structure |
01/03/2012 | US8089117 Semiconductor structure |
01/03/2012 | US8089116 FLOTOX-TYPE EEPROM and method for manufacturing the same |
01/03/2012 | US8089115 Organic memory device with a charge storage layer and method of manufacture |
01/03/2012 | US8089114 Non-volatile memory devices including blocking and interface patterns between charge storage patterns and control electrodes and related methods |
01/03/2012 | US8089113 Damascene metal-insulator-metal (MIM) device |
01/03/2012 | US8089111 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof |
01/03/2012 | US8089108 Double-gated transistor memory |
01/03/2012 | US8089107 Three-dimensional integrated device |
01/03/2012 | US8089097 Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
01/03/2012 | US8089096 Field effect transistor with main surface including C-axis |
01/03/2012 | US8089095 Two terminal multi-channel ESD device and method therefor |
01/03/2012 | US8089094 Semiconductor device |
01/03/2012 | US8089093 Nitride semiconductor device including different concentrations of impurities |
01/03/2012 | US8089091 Semiconductor light emitting device with a contact formed on a textured surface |
01/03/2012 | US8089090 Ultra-thin ohmic contacts for p-type nitride light emitting devices |
01/03/2012 | US8089085 Heat sink base for LEDS |
01/03/2012 | US8089084 Light emitting device |
01/03/2012 | US8089079 Light emitting device |