Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2012
01/17/2012US8097912 Systems and methods for self convergence during erase of a non-volatile memory device
01/17/2012US8097911 Etch stop structures for floating gate devices
01/17/2012US8097910 Vertical transistors
01/17/2012US8097909 Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using the same
01/17/2012US8097906 Semiconductor device having finger electrodes
01/17/2012US8097905 Cascoded high voltage junction field effect transistor
01/17/2012US8097903 Semiconductor memory device
01/17/2012US8097902 Programmable metallization memory cells via selective channel forming
01/17/2012US8097901 Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor
01/17/2012US8097900 Monolithically integrated light-actived thyristor and method
01/17/2012US8097895 Electronic device package with an optical device
01/17/2012US8097892 Light-emitting diode
01/17/2012US8097888 Package carrier for effectively blocking optical signal transmission between light emitting device and light receiving device
01/17/2012US8097887 Light emitting device having a monotone decreasing function
01/17/2012US8097885 Compound semiconductor film, light emitting film, and manufacturing method thereof
01/17/2012US8097884 Semiconductor device and manufacturing method thereof
01/17/2012US8097883 Thin film transistors in pixel and driver portions characterized by surface roughness
01/17/2012US8097882 Organic EL display and method of fabricating comprising plural TFTs and with connection electrode wrapped on organic pattern
01/17/2012US8097881 Thin film transistor substrate and a fabricating method thereof
01/17/2012US8097880 Semiconductor component including a lateral transistor component
01/17/2012US8097878 Nonvolatile memory elements with metal-deficient resistive-switching metal oxides
01/17/2012US8097877 Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films
01/17/2012US8097873 Phase change memory structures
01/17/2012US8097872 Modifiable gate stack memory element
01/17/2012US8097524 Lightly doped silicon carbide wafer and use thereof in high power devices
01/17/2012US8097515 Self-aligned contacts for nanowire field effect transistors
01/12/2012WO2012006546A2 Circuits, devices and sensors for fluid detection
01/12/2012WO2012006261A2 Power semiconductor devices, structures, and related methods
01/12/2012WO2012005749A1 Radiation-hardened roic with tdi capability, multi-layer sensor chip assembly and method for imaging
01/12/2012WO2012005389A1 Method for manufacturing a polycrystalline silicon thin film
01/12/2012WO2012005292A1 Semiconductor substrate etching method and production method for capacitive mems sensor
01/12/2012WO2012005198A1 Method for manufacturing an active matrix substrate
01/12/2012WO2012005038A1 Liquid crystal display device
01/12/2012WO2012005030A1 Thin film transistor, method for manufacturing same, and display device
01/12/2012WO2012004958A1 Thin-film transistor substrate, production method for same, and liquid crystal display panel
01/12/2012WO2012004925A1 Semiconductor device, method for manufacturing same, and liquid crystal display device
01/12/2012WO2012004920A1 Thin film transistor memory and display device equipped with same
01/12/2012WO2012004911A1 Semiconductor device and method for producing same
01/12/2012WO2012004267A1 Microelectronic device having metal interconnection levels connected by programmable vias
01/12/2012WO2012004186A1 Self-aligned contacts in carbon devices
01/12/2012WO2012004147A1 Method and device for producing an edge structure of a semiconductor component
01/12/2012WO2012004053A1 Symmetric ldmos transistor and method of production
01/12/2012WO2012003725A1 Channel stress inducing method and fet manufactured thereof
01/12/2012WO2012003660A1 Method of manufacturing soi mos device structure for suppressing floating body effect
01/12/2012WO2012003659A1 Method of manufacturing soi mos device for achieving ohmic contact of source and body
01/12/2012WO2012003658A1 Method for fabricating silicon-on-insulator (soi) high-voltage power device chip with trench structure
01/12/2012WO2012003612A1 Finfet based nonvolatile memory device and manufacturing method thereof
01/12/2012WO2012003609A1 Normally-off iii-nitride metal-2deg tunnel junction field-effect transistors
01/12/2012US20120008400 Non-volatile semiconductor storage device and method of manufacturing the same
01/12/2012US20120008381 Magnetoresistive element
01/12/2012US20120007246 Semiconductor device and method for fabricating the same
01/12/2012US20120007238 Method of Manufacturing a Semiconductor Device
01/12/2012US20120007223 Power Semiconductor Element With Two-Stage Impurity Concentration Profile
01/12/2012US20120007221 Mask for forming integrated circuit
01/12/2012US20120007220 Method for Reducing Chip Warpage
01/12/2012US20120007219 Semiconductor device and method of fabricating the same
01/12/2012US20120007217 Encapsulant cavity integrated circuit package system and method of fabrication thereof
01/12/2012US20120007216 Multi-Chip Package Module And A Doped Polysilicon Trench For Isolation And Connection
01/12/2012US20120007214 Integrated circuit system with hierarchical capacitor and method of manufacture thereof
01/12/2012US20120007212 Semiconductor device having a diode
01/12/2012US20120007210 Method of forming shallow trench isolation structure
01/12/2012US20120007209 Semiconductor device structures including damascene trenches with conductive structures and related method
01/12/2012US20120007208 Semiconductor Devices and Methods of Manufacturing the Same
01/12/2012US20120007207 Apparatus and method for electronic circuit protection
01/12/2012US20120007206 Structures and methods for forming schottky diodes on a p-substrate or a bottom anode schottky diode
01/12/2012US20120007196 Magnetoresistive random access memory and method of manufacturing the same
01/12/2012US20120007194 Semiconductor device and method for manufacturing the same in which variations are reduced and characteristics are improved
01/12/2012US20120007184 Semiconductor device and method of fabricating the same
01/12/2012US20120007183 Multi-gate Transistor Having Sidewall Contacts
01/12/2012US20120007179 Semiconductor device and manufacturing method thereof
01/12/2012US20120007177 Semiconductor device and method of manufacturing the same
01/12/2012US20120007176 High-Voltage Bipolar Transistor with Trench Field Plate
01/12/2012US20120007175 Metal Oxide Semiconductor (MOS) Transistors Having a Recessed Gate Electrode
01/12/2012US20120007174 Semiconductor device and method of manufacturing the same
01/12/2012US20120007173 Semiconductor device and manufacturing method of the same
01/12/2012US20120007172 Semiconductor device and method for forming the same
01/12/2012US20120007171 Semiconductor memory device having vertical transistor and buried bit line and method for fabricating the same
01/12/2012US20120007170 High source to drain breakdown voltage vertical field effect transistors
01/12/2012US20120007169 Semiconductor device and its production method
01/12/2012US20120007168 Semiconductor device capable of suppressing short channel effect
01/12/2012US20120007167 3D Memory Array With Improved SSL and BL Contact Layout
01/12/2012US20120007166 Non-volatile memory device using finfet and method for manufacturing the same
01/12/2012US20120007165 Semiconductor devices
01/12/2012US20120007164 Semiconductor memory device and method for manufacturing the same
01/12/2012US20120007163 Nonvolatile memory device
01/12/2012US20120007162 Method of forming semiconductor devices
01/12/2012US20120007161 Semiconductor Non-volatile Memory
01/12/2012US20120007155 Semiconductor devices with extended active regions
01/12/2012US20120007154 TSV Formation Processes Using TSV-Last Approach
01/12/2012US20120007153 Semiconductor device
01/12/2012US20120007151 Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device
01/12/2012US20120007150 Integrated device of the type comprising at least a microfluidic system and further circuitry and corresponding integration process
01/12/2012US20120007147 Semiconductor device and method for manufacturing the same
01/12/2012US20120007146 Method for forming strained layer with high ge content on substrate and semiconductor structure
01/12/2012US20120007145 Asymmetric channel mosfet
01/12/2012US20120007144 Compound Semiconductor Device and Method of Producing the Same
01/12/2012US20120007143 Substrate structure and method of manufacturing the same
01/12/2012US20120007139 Semiconductor device
01/12/2012US20120007104 Semiconductor device and method for manufacturing same
01/12/2012US20120007103 Silicon carbide bipolar junction transistor