Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2013
03/14/2013US20130062715 Symmetrically switchable spin-transfer-torque magnetoresistive device
03/14/2013US20130062714 Strain induced reduction of switching current in spin-transfer torque switching devices
03/14/2013US20130062713 Pressure sensor and method for manufacturing pressure sensor
03/14/2013US20130062712 Hot-Melt Sealing Glass Compositions And Devices Using The Same
03/14/2013US20130062710 Micro Electrical Mechanical System with Bending Deflection of Backplate Structure
03/14/2013US20130062709 Gap-Fill Keyhole Repair Using Printable Dielectric Material
03/14/2013US20130062707 Dummy cell pattern for improving device thermal uniformity
03/14/2013US20130062706 Electronic Module
03/14/2013US20130062701 Semiconductor device and manufacturing method thereof
03/14/2013US20130062695 Semiconductor device and manufacturing method for the same
03/14/2013US20130062694 Semiconductor device with high-voltage breakdown protection
03/14/2013US20130062693 Semiconductor device and method of manufacturing the same
03/14/2013US20130062692 Half-FinFET Semiconductor Device and Related Method
03/14/2013US20130062691 Semiconductor device including an n-well structure
03/14/2013US20130062689 Semiconductor device and method for manufacturing the same
03/14/2013US20130062688 Semiconductor device and method for manufacturing same
03/14/2013US20130062687 Sram cell having recessed storage node connections and method of fabricating same
03/14/2013US20130062686 Non-volatile semiconductor memory using charge-accumulation insulating film
03/14/2013US20130062685 Nonvolatile semiconductor storage device
03/14/2013US20130062684 Gate stack structure and fabricating method used for semiconductor flash memory device
03/14/2013US20130062683 Semiconductor memory device and method of manufacturing the same
03/14/2013US20130062682 Semiconductor memory and manufacturing method thereof
03/14/2013US20130062681 Semiconductor memory device and method for manufacturing the same
03/14/2013US20130062678 Recessed Access Device for a Memory
03/14/2013US20130062676 Flash memory structure
03/14/2013US20130062675 Pillars for vertical transistors
03/14/2013US20130062674 Spin transfer torque random access memory
03/14/2013US20130062672 Semiconductor device and method for manufacturing the same
03/14/2013US20130062671 Nitride semiconductor device
03/14/2013US20130062670 Device with Engineered Epitaxial Region and Methods of Making Same
03/14/2013US20130062669 Silicide formation and associated devices
03/14/2013US20130062668 Heterojunction bipolar transistors with reduced base resistance
03/14/2013US20130062666 Compound semiconductor device and method for manufacturing the same
03/14/2013US20130062665 Method for producing a iii/v si template
03/14/2013US20130062664 Semiconductor device and manufacturing method of semiconductor device
03/14/2013US20130062661 Integrated circuit device
03/14/2013US20130062629 Silicon carbide semiconductor device and method for manufacturing same
03/14/2013US20130062628 Methods for the epitaxial growth of silicon carbide
03/14/2013US20130062626 Power semiconductor module
03/14/2013US20130062625 Semiconductor device
03/14/2013US20130062624 Semiconductor device and method for manufacturing the same
03/14/2013US20130062623 Semiconductor device and method of manufacturing the same
03/14/2013US20130062622 Semiconductor device and method for manufacturing the same
03/14/2013US20130062621 Iii-n device structures having a non-insulating substrate
03/14/2013US20130062620 Schottky diode employing recesses for elements of junction barrier array
03/14/2013US20130062619 Edge termination structure employing recesses for edge termination elements
03/14/2013US20130062616 GaN-BASED FIELD EFFECT TRANSISTOR
03/14/2013US20130062614 Group iii-v enhancement mode transistor with thyristor gate
03/14/2013US20130062612 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
03/14/2013US20130062611 Semiconductor device
03/14/2013US20130062609 Iii-n fet on silicon using field suppressing reo
03/14/2013US20130062607 Semiconductor device
03/14/2013US20130062606 Thin film transistor and method of manufacturing the same
03/14/2013US20130062603 Test structure and calibration method
03/14/2013US20130062602 Oxide Semiconductor Transistors And Methods Of Manufacturing The Same
03/14/2013US20130062601 Oxide semiconductor layer and semiconductor device
03/14/2013US20130062600 Semiconductor device and manufacturing method thereof
03/14/2013US20130062594 Method of isolating nanowires from a substrate
03/14/2013US20130062591 Case including semiconductor nanocrystals, and optoelectronic device including the same
03/14/2013DE112011101475T5 Halbleiteranzeigevorrichtung mit Ansteuerverfahren Semiconductor display device driving
03/14/2013DE112011101373T5 Bipolare transistorstruktur und verfahren zur bildung der struktur Bipolar transistor structure and method of forming the structure
03/14/2013DE102012108608A1 Elektronisches Modul Electronic module
03/14/2013DE102011090165A1 Erhöhte Integrität von Metallgatestapeln mit großem ε durch Bewahren eines Lackmaterials über Endbereichen von Gateelektrodenstrukturen Increased integrity of metal gate stacks with large ε by preserving a resist material on end portions of gate electrode structures
03/14/2013DE102004005084B4 Halbleiterbauelement Semiconductor device
03/13/2013EP2568516A1 Thin-film transistor and electronic unit
03/13/2013EP2568507A1 Z2FET field effect transistor with zero sub-threshold swing and zero impact ionisation
03/13/2013EP2568506A1 Tunnel transistor, logical gate comprising the transistor, static random-access memory using the logical gate and method for making such a tunnel transistor
03/13/2013EP2567404A1 Field effect power transistors
03/13/2013EP2567403A1 Hole doping of graphene
03/13/2013EP2567004A1 Substrate for epitaxial growth
03/13/2013CN202798612U Internal-matching high-frequency high power transistor
03/13/2013CN202796965U Thin film transistor, array substrate using thin film transistor
03/13/2013CN202796964U Depletion type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)
03/13/2013CN202796963U 半导体器件 Semiconductor devices
03/13/2013CN202796962U Groove type shielding well area power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with embedded separated polysilicon electrodes
03/13/2013CN202796961U IGBT structure with built-in diode
03/13/2013CN202796960U IGBT structure with built-in diode
03/13/2013CN202796931U Device structure of power metal-oxide-semiconductor field effect transistor (MOSFET)
03/13/2013CN202796930U Packaging body for metal-oxide-semiconductor field effect transistor (MOSFET) chip
03/13/2013CN202796908U External connection type silicon controlled rectifier module
03/13/2013CN102971857A 薄膜晶体管 The thin film transistor
03/13/2013CN102971856A LDMOS device with p-body for reduced capacitance
03/13/2013CN102971855A Semiconductor device and method for manufacturing same
03/13/2013CN102971854A Self-aligned contacts in carbon devices
03/13/2013CN102971853A Semiconductor device and process for production thereof
03/13/2013CN102971849A Semiconductor devices on diffusion barrier coated substrates and methods of making the same
03/13/2013CN102971807A Precursor composition and method for forming amorphous conductive oxide film
03/13/2013CN102969365A Core shell structure nanowire tunneling field effect device
03/13/2013CN102969364A Top gate structure metallic oxide thin film transistor for improving device uniformity and manufacture method thereof
03/13/2013CN102969363A Thin film transistor array substrate and manufacturing method of the same
03/13/2013CN102969362A High-stability amorphous metallic oxide thin film transistor (TFT) device
03/13/2013CN102969361A Illumination stability amorphous metallic oxide thin film transistor (TFT) device and display device
03/13/2013CN102969360A Group III-V semiconductor nanowire array field effect transistor
03/13/2013CN102969359A Independent grid controlled nano line tunneling field effect device and manufacturing method thereof
03/13/2013CN102969358A Transverse high-voltage power semiconductor device
03/13/2013CN102969357A Transverse ultra-junction high-voltage power semiconductor device
03/13/2013CN102969356A Terminal structure of super-junction power device
03/13/2013CN102969355A Silicon on insulator (SOI)-based metal-oxide-semiconductor field-effect transistor (PMOSFET) power device
03/13/2013CN102969354A Semiconductor device
03/13/2013CN102969353A Multi-fin device and method of making same
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