| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/21/2013 | DE102011113549A1 Semiconductor component e.g. diode, has dopant region formed with oxygen/vacancy complex for specified distance from upper side of semiconductor body to lower side of body and comprising oxygen concentration within specified range |
| 03/21/2013 | DE102011088584A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation |
| 03/21/2013 | DE102011080589B4 Herstellung einer Kanalhalbleiterlegierung durch Erzeugen einer nitridbasierten Hartmaskenschicht Preparing a semiconductor alloy channel by generating a nitride-based hardmask layer |
| 03/21/2013 | DE102011053641A1 SiC-MOSFET mit hoher Kanalbeweglichkeit SiC MOSFET with high channel mobility |
| 03/21/2013 | DE102011002769B4 Halbleiterbauelement und Verfahren zur Herstellung einer Hybridkontaktstruktur mit Kontakten mit kleinem Aspektverhältnis in einem Halbleiterbauelement A semiconductor device and method for manufacturing a hybrid contact structure contacts with a small aspect ratio in a semiconductor device |
| 03/21/2013 | DE102008064728B4 Verfahren zum Herstellen eines siliziumbasierten Metalloxidhalbleiterbauelements A method of manufacturing a silicon-based Metalloxidhalbleiterbauelements |
| 03/21/2013 | DE102008001531B4 Schaltung, Herstellungsverfahren und Verwendung eines Bauelements mit Doppelgate-FinFET Circuit manufacturing process and use of a device having double-gate FinFET |
| 03/20/2013 | EP2571059A1 Semiconductor device, active matrix substrate, and display device |
| 03/20/2013 | EP2571058A1 Circuit board and display device |
| 03/20/2013 | EP2571057A2 Normally-off semiconductor devices and methods of fabricating the same |
| 03/20/2013 | EP2571044A1 Organic semiconductor film and method for manufacturing the same, and stamp for contact printing |
| 03/20/2013 | EP2571043A1 Flexible semiconductor device, manufacturing method for same, and image display device |
| 03/20/2013 | EP2570790A2 Shear test method |
| 03/20/2013 | EP2569803A1 Semiconductor devices having gates including oxidized nickel and related methods of fabricating the same |
| 03/20/2013 | EP2569801A1 Process for producing a conducting electrode |
| 03/20/2013 | EP2487708A9 Method for obtaining a network of nanometric terminals |
| 03/20/2013 | CN202816959U Memory device |
| 03/20/2013 | CN202816958U Thin film transistor TFT array substrate and display device |
| 03/20/2013 | CN202816957U Thin film transistor, array substrate and display device |
| 03/20/2013 | CN202816956U Half fin type FET semiconductor device |
| 03/20/2013 | CN202816955U Split-gate trench power MOS device |
| 03/20/2013 | CN202816954U Lateral double diffused metal oxide semiconductor (DMOS) field effect transistor |
| 03/20/2013 | CN202816953U Transversal high-voltage transistor |
| 03/20/2013 | CN202816952U Fin-based bipolar junction transistor |
| 03/20/2013 | CN202816951U High-voltage trigger tube and trigger circuit of baking oven, baking box, and metal halid lamp |
| 03/20/2013 | CN102986034A Thin film transistors |
| 03/20/2013 | CN102986033A Conductivity modulation in a silicon carbide bipolar junction transistor |
| 03/20/2013 | CN102986023A Thin film transistor memory and display device equipped with same |
| 03/20/2013 | CN102986012A Thin-film transistor substrate, production method for same, and liquid crystal display panel |
| 03/20/2013 | CN102986011A Manufacturing method for semi-conductor device |
| 03/20/2013 | CN102986010A Generation of multiple diameter nanowire field effect transistors |
| 03/20/2013 | CN102986009A Method and apparatus for manufacturing silicon carbide semiconductor device |
| 03/20/2013 | CN102985465A Crosslinked composition |
| 03/20/2013 | CN102983177A Schottky diode and fabrication method thereof |
| 03/20/2013 | CN102983176A Thin film transistor including a nanoconductor layer |
| 03/20/2013 | CN102983175A Polycrystalline silicon thin film transistor by using atomic layer deposited alumina as gate dielectric |
| 03/20/2013 | CN102983174A Strained PMOSFET with trough-type structures and fabrication method of strain PMOSFET |
| 03/20/2013 | CN102983173A Strained NMOSFET with trough structures and production method of strained NMOSFET |
| 03/20/2013 | CN102983172A MOS device provided with vertical GaAs base structure and fabrication method of MOS device |
| 03/20/2013 | CN102983171A Structure and manufacturing method of vertical junctionless gate-all-round MOSFET device |
| 03/20/2013 | CN102983170A Independent gate controlled junctionless nanowire field effect transistor |
| 03/20/2013 | CN102983169A Bigrid semiconductor device with high breakdown voltage |
| 03/20/2013 | CN102983168A Tunneling field effect transistor with double-diffused strip gate and preparation method thereof |
| 03/20/2013 | CN102983167A Substrate with charged region in insulating buried layer |
| 03/20/2013 | CN102983166A Multi-grid-electrode high pressure field effect transistor |
| 03/20/2013 | CN102983165A FinFET design controlling channel thickness |
| 03/20/2013 | CN102983164A Semiconductor device and method for manufacturing same |
| 03/20/2013 | CN102983163A Metal-oxide -semiconductor field effect transistors (MOSFETs) capable of reducing source drain contact resistance and manufacturing method thereof |
| 03/20/2013 | CN102983162A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
| 03/20/2013 | CN102983161A Non-buried layer double deep N well high-voltage isolation N-type LDMOS and method for manufacturing N-type LDMOS devices |
| 03/20/2013 | CN102983160A 绝缘栅双极型晶体管 Insulated gate bipolar transistors |
| 03/20/2013 | CN102983159A Semiconductor device and method of producing the same |
| 03/20/2013 | CN102983158A Optical excitation method for generating spin-polarized electrons and spin current |
| 03/20/2013 | CN102983157A Aluminum grid and preparation method thereof as well as thin film transistor with aluminum grid |
| 03/20/2013 | CN102983156A Metal grid structure and metal grid process thereof |
| 03/20/2013 | CN102983139A 半导体存储器 Semiconductor memory |
| 03/20/2013 | CN102983135A Array substrate, display device and fabrication method of array substrate |
| 03/20/2013 | CN102983134A Display device and array substrate and fabrication method of array substrate |
| 03/20/2013 | CN102983116A Semiconductor substrate and integrated circuit provided with semiconductor substrate and manufacturing method of integrated circuit |
| 03/20/2013 | CN102983114A High performance power transistor having ultra-thin package |
| 03/20/2013 | CN102983107A Diode packaged by soft material ring and hard epoxy resin and fabrication method of diode |
| 03/20/2013 | CN102983105A Self-aligned insulated film for high-k metal gate device |
| 03/20/2013 | CN102983080A Method for improving erasure and programming performances of split gate memory |
| 03/20/2013 | CN102983070A Preparation method for metamaterial and metamaterial |
| 03/20/2013 | CN102414818B Semiconductor element, semiconductor device, and power converter |
| 03/20/2013 | CN102339859B Metal-oxide-semiconductor (MOS) transistor and formation method thereof |
| 03/20/2013 | CN102313821B Physical quantity sensor and electronic apparatus |
| 03/20/2013 | CN102306656B Isolation structure of high voltage driver circuit |
| 03/20/2013 | CN102299173B Superstructural longitudinal double-diffusion N-type metal oxide semiconductor tube |
| 03/20/2013 | CN102254065B Method for extracting parameters of bipolar transistor and equivalent circuit of bipolar transistor |
| 03/20/2013 | CN102184964B N-channel accumulative SiC IEMOSFET (Implantation and Epitaxial Metal-Oxide-Semiconductor Field Effect Transistor) device and manufacturing method thereof |
| 03/20/2013 | CN102184942B Device having graphene and hexagonal boron nitride and associated device |
| 03/20/2013 | CN102184849B Method for manufacturing graphene-based field effect transistor |
| 03/20/2013 | CN102163605B Microstrip network of microwave integrated circuit |
| 03/20/2013 | CN102142434B 双向静电放电保护电路及相关的射频识别标签 Bidirectional ESD protection circuit and a radio frequency identification tag associated with |
| 03/20/2013 | CN102130015B Grate-etching process for high voltage field effect transistor |
| 03/20/2013 | CN102124569B Thin film transistors using multiple active channel layers |
| 03/20/2013 | CN102124568B Electronic device comprising static induction transistor and thin film transistor, method of manufacturing an electronic device and display panel |
| 03/20/2013 | CN102104060B Semiconductor structure and forming method thereof |
| 03/20/2013 | CN102104041B Integrated circuit with dummy structure for isolating devices |
| 03/20/2013 | CN102097470B Semiconductor device and method for manufacturing the same |
| 03/20/2013 | CN102088033B Closed groove type power metal oxide semiconductor field effect transistor structure and manufacturing method thereof |
| 03/20/2013 | CN102082144B Electro-static discharge (ESD) protection structure in silicon-on-insulator (SOI) circuit and manufacturing method thereof |
| 03/20/2013 | CN102064176B Semiconductor device and manufacturing method thereof |
| 03/20/2013 | CN102064091B Nitride semiconductor component and method for the production thereof |
| 03/20/2013 | CN102044443B Semiconductor device and method of manufacturing the same |
| 03/20/2013 | CN101901804B VDMOS (Vertical Double-diffused Metal Oxidation Semiconductor) devices and production method thereof |
| 03/20/2013 | CN101599491B Esd保护电路和半导体器件 Esd protection circuits and semiconductor devices |
| 03/20/2013 | CN101573800B PN junction and MOS capacitor hybrid resurf transistor |
| 03/20/2013 | CN101527321B Thin film transistor, and flat panel display including the thin film transistor |
| 03/20/2013 | CN101383393B Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element |
| 03/20/2013 | CN101350369B Bottom anode schottky diode structure and manufacture method |
| 03/20/2013 | CN101315952B Schottky diode and method therefor |
| 03/20/2013 | CN101097926B Thin-film semiconductor device, thin-film transistor, and method of fabricating thin-film transistor |
| 03/19/2013 | US8400832 Semiconductor device |
| 03/19/2013 | US8400067 Element substrate and light emitting device |
| 03/19/2013 | US8400053 Carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| 03/19/2013 | US8399995 Semiconductor device including single circuit element for soldering |
| 03/19/2013 | US8399994 Semiconductor chip and semiconductor package having the same |
| 03/19/2013 | US8399989 Metal pad or metal bump over pad exposed by passivation layer |