Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2013
04/25/2013WO2013058222A1 Solid-phase bonded wafer support substrate detachment method and semiconductor device fabrication method
04/25/2013WO2013058191A1 Semiconductor device and manufacturing method therefor
04/25/2013WO2013058044A1 Strongly correlated non-volatile memory device
04/25/2013WO2013058037A1 Silicon carbide semiconductor device and method for manufacturing same
04/25/2013WO2013057771A1 Method for manufacturing thin-film transistor
04/25/2013WO2013057766A1 Thin-film transistor device and method for producing same
04/25/2013WO2013057564A1 Semiconductor device and method of producing the same
04/25/2013WO2013057456A2 Method for producing an organised network of semiconductor nanowires, in particular made of zno
04/25/2013WO2013057321A1 A single crystal high dielectric constant material
04/25/2013WO2013056617A1 Pixel unit, array substrate, liquid crystal panel and manufacturing method for array substrate
04/25/2013WO2013056573A1 Thin film transistor (tft) array substrate, electronic paper display panel and forming method thereof
04/25/2013WO2013056491A1 Float gate structure for flash memory device and preparation method thereof
04/25/2013WO2013056405A1 Semiconductor structure and method for forming same
04/25/2013WO2013025914A3 Sensitivity adjustment apparatus and method for mems devices
04/25/2013WO2013017408A3 Ga-assisted growth of a gaasp nanostructure, gold-free gaasp nanostructure, and photovoltaic cell incorporating such a nanostructure
04/25/2013WO2013002902A3 Method and structure for low resistive source and drain regions in a replacement metal gate process flow
04/25/2013WO2012154720A3 Metal oxide metal capacitor structures
04/25/2013US20130102139 Method for manufacturing double-gate structures
04/25/2013US20130102135 2deg schottky diode formed in nitride material with a composite schottky/ohmic electrode structure and method of making the same
04/25/2013US20130102118 Semiconductor device with one-side-contact and method for fabricating the same
04/25/2013US20130102115 Method for manufacturing active matrix substrate
04/25/2013US20130100978 Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region
04/25/2013US20130100741 3-d nonvolatile memory device and method of manufacturing the same, and memory system including the 3-d nonvolatile memory device
04/25/2013US20130100738 Three-dimensional nonvolatile memory devices
04/25/2013US20130100732 Array Structural Design of Magnetoresistive Random Access Memory (MRAM) Bit Cells
04/25/2013US20130100728 Semiconductor device and method for forming the same
04/25/2013US20130100722 Three-dimensional non-volatile memory device, memory system including the same, and method of manufacturing the same
04/25/2013US20130100618 Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates
04/25/2013US20130100090 Electromechanical systems variable capacitance device
04/25/2013US20130099363 Molecular Self-Assembly in Substrate Processing
04/25/2013US20130099362 Method of forming self-assembled patterns using block copolymers, and articles thereof
04/25/2013US20130099361 Semiconductor Structure and Method for Manufacturing the Same
04/25/2013US20130099357 Strain compensated reo buffer for iii-n on silicon
04/25/2013US20130099355 MEMS Structures and Methods for Forming the Same
04/25/2013US20130099354 Capacitor with deep trench ion implantation
04/25/2013US20130099351 Bipolar transistor and method of manufacturing the same
04/25/2013US20130099350 Semiconductor Device and Method of Manufacture
04/25/2013US20130099349 Semiconductor device and method of manufacturing the same
04/25/2013US20130099347 Superjunction semiconductor device
04/25/2013US20130099339 Spintronic Electronic Device and Circuits
04/25/2013US20130099338 Magnetic memory element and magnetic memory
04/25/2013US20130099337 Magnetic memory element and magnetic memory
04/25/2013US20130099336 Magnetic tunnel junction device and its fabricating method
04/25/2013US20130099335 Novel Magnetic Tunnel Junction Device And Its Fabricating Method
04/25/2013US20130099334 Z-Axis Semiconductor Fluxgate Magnetometer
04/25/2013US20130099331 Structure and process for microelectromechanical system-based sensor
04/25/2013US20130099330 Controllable Undercut Etching of Tin Metal Gate Using DSP+
04/25/2013US20130099329 Method for manufacturing insulated-gate mos transistors
04/25/2013US20130099328 P-type semiconductor device and method for manufacturing the same
04/25/2013US20130099327 Cmos devices and method for manufacturing the same
04/25/2013US20130099326 Semiconductor structure
04/25/2013US20130099324 Gan-on-si switch devices
04/25/2013US20130099322 Method for manufacturing insulated-gate transistors
04/25/2013US20130099320 Semiconductor deving having metal gate electrode and method of fabrication thereof
04/25/2013US20130099315 Mosfet and method for manufacturing the same
04/25/2013US20130099314 Semiconductor Device With Multiple Stress Structures And Method Of Forming The Same
04/25/2013US20130099313 Finfet structure and method to adjust threshold voltage in a finfet structure
04/25/2013US20130099312 Semiconductor structure having a through substrate via (tsv) and method for forming
04/25/2013US20130099310 Trench MOS Device with Schottky Diode and Method for Manufacturing Same
04/25/2013US20130099309 Vertical mosfet electrostatic discharge device
04/25/2013US20130099308 Semiconductor Device Having a Through Contact and a Manufacturing Method Therefor
04/25/2013US20130099307 Semiconductor device having metal gate and manufacturing method thereof
04/25/2013US20130099306 3-d nonvolatile memory device and method of manufacturing the same
04/25/2013US20130099305 Semiconductor devices including a vertical channel transistor and methods of fabricating the same
04/25/2013US20130099304 3-dimensional nonvolatile memory device and method of manufacturing the same
04/25/2013US20130099303 Memory and manufacturing method thereof
04/25/2013US20130099302 Semiconductor memory device and method of manufacturing the same
04/25/2013US20130099301 Nonvolatile memory device and method of manufacturing thereof
04/25/2013US20130099300 Floating Gate Structure of Flash Memory Device and Method for Fabricating the Same
04/25/2013US20130099298 Semiconductor device and method for manufacturing the same
04/25/2013US20130099295 Replacement gate fabrication methods
04/25/2013US20130099294 MOSFETs with Multiple Dislocation Planes
04/25/2013US20130099293 Semiconductor structure and method for forming the same
04/25/2013US20130099288 SiGe HBT and Manufacturing Method Thereof
04/25/2013US20130099287 Gallium arsenide heterojunction semiconductor structure
04/25/2013US20130099286 Compound semiconductor device and method for fabricating the same
04/25/2013US20130099285 High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the same
04/25/2013US20130099284 Group iii-nitride metal-insulator-semiconductor heterostructure field-effect transistors
04/25/2013US20130099283 III-V Multi-Channel FinFETs
04/25/2013US20130099282 FinFET Device And Method Of Manufacturing Same
04/25/2013US20130099281 Post-gate shallow trench isolation structure formation
04/25/2013US20130099280 Overvoltage and/or electrostatic discharge protection device
04/25/2013US20130099277 SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES
04/25/2013US20130099253 Epitaxial wafer and semiconductor device
04/25/2013US20130099252 Method of manufacturing silicon carbide substrate and silicon carbide substrate
04/25/2013US20130099251 Silicon carbide semiconductor device and method for manufacturing same
04/25/2013US20130099250 Structure of semiconductor chips with enhanced die strength and a fabrication method thereof
04/25/2013US20130099247 Semiconductor devices having a recessed electrode structure
04/25/2013US20130099246 Substrate for epitaxial growth
04/25/2013US20130099245 Field effect transistor, method for producing the same, and electronic device
04/25/2013US20130099243 Substrate breakdown voltage improvement for group iii-nitride on a silicon substrate
04/25/2013US20130099240 Thin film transistor, thin film transistor panel, and method for manufacturing the same
04/25/2013US20130099238 Liquid crystal display having a high aperture ratio
04/25/2013US20130099237 Semiconductor device and manufacturing method thereof
04/25/2013US20130099236 Modification of silicon layers formed from silane-containing formulations
04/25/2013US20130099234 Semiconductor device and method for manufacturing the same
04/25/2013US20130099233 Semiconductor device and method for manufacturing the same
04/25/2013US20130099232 Semiconductor device
04/25/2013US20130099231 Semiconductor device and method for manufacturing the same
04/25/2013US20130099230 Semiconductor device and manufacturing method thereof