| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/01/2013 | US20130193449 PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC |
| 08/01/2013 | US20130193448 Patterned substrate and stacked light emitting diode |
| 08/01/2013 | US20130193447 Silicon carbide semiconductor device |
| 08/01/2013 | US20130193446 Finfet and method of fabricating the same |
| 08/01/2013 | US20130193445 Soi structures including a buried boron nitride dielectric |
| 08/01/2013 | US20130193444 High voltage switching devices and process for forming same |
| 08/01/2013 | US20130193441 Semiconductor Substrates Using Bandgap Material Between III-V Channel Material and Insulator Layer |
| 08/01/2013 | US20130193439 Semiconductor device and flat panel display including the same |
| 08/01/2013 | US20130193435 Semiconductor device |
| 08/01/2013 | US20130193434 Semiconductor device and manufacturing method thereof |
| 08/01/2013 | US20130193433 Semiconductor device and method for manufacturing the same |
| 08/01/2013 | US20130193432 Semiconductor device and method for manufacturing the same |
| 08/01/2013 | US20130193431 Semiconductor device and method for manufacturing the same |
| 08/01/2013 | US20130193430 Oxide semiconductor, thin film transistor, and display device |
| 08/01/2013 | US20130193424 Element substrate and light emitting device |
| 08/01/2013 | US20130193412 Transistors and methods of manufacturing the same |
| 08/01/2013 | US20130193411 Graphene device and method of manufacturing the same |
| 08/01/2013 | US20130193410 Nano-devices formed with suspended graphene membrane |
| 08/01/2013 | US20130192671 Conductive metal paste and use thereof |
| 08/01/2013 | US20130192655 Thermoelectric device embedded in a printed circuit board |
| 08/01/2013 | DE112011103549T5 Halbleiterstruktur und Herstellungsverfahren Semiconductor structure and manufacturing method |
| 08/01/2013 | DE112011103470T5 Halbleiterbauelement und Verfahren zum Herstellen desselben Of the same semiconductor device and method of manufacturing |
| 08/01/2013 | DE112011103469T5 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same |
| 08/01/2013 | DE112011103281T5 Verfahren zum Ausbilden einer E-Sicherung in einem Prozess zum Fertigen eines Ersatzmetall-Gates A method for forming an electric fuse in a process of manufacturing a replacement metal gates |
| 08/01/2013 | DE112011103230T5 Non-Punch-Through-Bipolarleistungshalbleiterbauelement Non-punch-through Bipolarleistungshalbleiterbauelement |
| 08/01/2013 | DE112009000535B4 Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung Silicon carbide semiconductor device and process for their preparation |
| 08/01/2013 | DE102013201565A1 Halbleiterbauelement mit einer Randabschlussstruktur Semiconductor device with an edge termination structure |
| 08/01/2013 | DE102013200549A1 Verbesserte silicium-kohlenstoff-dünnschichtstruktur und verfahren Improved silicon-carbon thin film structure and method |
| 08/01/2013 | DE102013200547A1 Halbleitersubstrate, die material mit bandlücke zwischen iii-v- kanalmaterial und isolatorschicht verwenden Semiconductor substrates, using material with band gap between iii-v channel material and insulator layer |
| 08/01/2013 | DE102013200214A1 Nanoeinheiten, gebildet mit eingehängter Graphen-Membran Nano units formed with hinged graphene membrane |
| 08/01/2013 | DE102013001296A1 Hochstromfähige Zugriffseinrichtung für dreidimensionalen Halbleiterspeicher High current access device for three-dimensional semiconductor memory |
| 08/01/2013 | DE102012001508A1 Producing electrically conductive or semi-conductive metal oxide, comprises applying metal oxide precursor-solution or -dispersion on substrate, optionally drying the precursor layer, thermally transferring layer, and optionally cooling |
| 08/01/2013 | DE102006046844B4 Leistungshalbleiterbauelement mit Feldstoppzone und Verfahren zur Herstellung eines solchen Leistungshalbleiterbauelements A power semiconductor device with a field stop zone and process for the preparation of such a power semiconductor device |
| 07/31/2013 | EP2620984A1 Method for straining a thin pattern and method for manufacturing a transistor including said method |
| 07/31/2013 | EP2620983A1 Semiconductor element and manufacturing method therefor |
| 07/31/2013 | EP2620982A2 Graphene device and method of manufacturing the same |
| 07/31/2013 | EP2620981A2 Transistors and methods of manufacturing the same |
| 07/31/2013 | EP2620945A2 Structure and method for healing the tunnel dielectric of non-volatile memory cells |
| 07/31/2013 | EP2619798A2 Non-planar quantum well device having interfacial layer and method of forming same |
| 07/31/2013 | EP2619797A2 Non-planar device having uniaxially strained fin and method of making same |
| 07/31/2013 | EP2619796A2 Light emitting and lasing semiconductor methods and devices |
| 07/31/2013 | CN203103311U Thin film transistor structure, liquid crystal panel and liquid crystal display apparatus |
| 07/31/2013 | CN203103310U Thin film transistor structure, liquid crystal panel and liquid crystal display device |
| 07/31/2013 | CN203103309U A film transistor, an array substrate and a display device |
| 07/31/2013 | CN203103308U Silicon-controlled rectifier piece with composite inner passivation layer structure |
| 07/31/2013 | CN203103307U Igbt semiconductor device |
| 07/31/2013 | CN203103306U Semiconductor device |
| 07/31/2013 | CN203103298U IGBT (Insulated Gate Bipolar Transistor) device with grid protection |
| 07/31/2013 | CN1863954B System and process for producing nanowire composites and electronic substrates therefrom |
| 07/31/2013 | CN103229419A Method and circuit for switching memristive device |
| 07/31/2013 | CN103229412A Power supply unit for a vehicle electrical system of a motor vehicle |
| 07/31/2013 | CN103229305A Metal oxide TFT with improved stability |
| 07/31/2013 | CN103229304A Semiconductor device and method for manufacturing semiconductor device |
| 07/31/2013 | CN103229303A Oxide and spattering target material for semiconductor layer of thin-film transistor and thin-film transistor |
| 07/31/2013 | CN103229302A Oxide and spattering target for semiconductor layer of thin-film transistor, and thin-film transistor |
| 07/31/2013 | CN103229301A Thin film transistor and manufacture method thereof |
| 07/31/2013 | CN103229300A Vertical dmos-field effect transistor |
| 07/31/2013 | CN103229286A 半导体装置 Semiconductor device |
| 07/31/2013 | CN103229284A Nitride semiconductor device |
| 07/31/2013 | CN103229283A Semiconductor device and method of producing semiconductor device |
| 07/31/2013 | CN103229282A Methods to adjust threshold voltage in semiconductor devices |
| 07/31/2013 | CN103229095A Liquid crystal display panel, production method for same, and array substrate and production method for same |
| 07/31/2013 | CN103227293A Light-emitting element and display device |
| 07/31/2013 | CN103227211A Decoupling capacitor and layout for the capacitor |
| 07/31/2013 | CN103227210A Decoupling finfet capacitors |
| 07/31/2013 | CN103227209A Thin film transistor, thin film transistor array substrate and manufacturing method of thin film transistor array substance |
| 07/31/2013 | CN103227208A Thin film transistor, manufacturing method thereof, array substrate and display device |
| 07/31/2013 | CN103227207A Growth technology of TFT (thin film transistor) |
| 07/31/2013 | CN103227206A A thin film transistor, a manufacturing method thereof, and a display apparatus using the same |
| 07/31/2013 | CN103227205A Schematized strain PMOS (P-channel metal oxide semiconductor) device with deep groove structure and manufacturing method thereof |
| 07/31/2013 | CN103227204A Halo-doped bi-material heterogeneous gate graphene strip field effect transistor |
| 07/31/2013 | CN103227203A Nano-devices formed with suspended graphene membrane |
| 07/31/2013 | CN103227202A FinFET body contact and method of making same |
| 07/31/2013 | CN103227201A Transistors and methods of manufacturing the same |
| 07/31/2013 | CN103227200A Finfet and method of fabricating the same |
| 07/31/2013 | CN103227199A High-performance semiconductor electronic device |
| 07/31/2013 | CN103227198A Compound semiconductor device and method of manufacturing the same |
| 07/31/2013 | CN103227197A Field effect transistor and a method of forming the transistor |
| 07/31/2013 | CN103227196A Heterojunction bipolar transistor structure and method of manufacture and design structure |
| 07/31/2013 | CN103227195A Membrane laminated wiring for electronic components |
| 07/31/2013 | CN103227194A Large-size graphene stack structure wafer and preparation method thereof |
| 07/31/2013 | CN103227193A Semiconductor device with edge termination structure |
| 07/31/2013 | CN103227192A Semiconductor substrate and method for forming semiconductor substrate and integrated circuit |
| 07/31/2013 | CN103227191A 氮化物半导体外延晶片以及场效应型氮化物晶体管 Nitride semiconductor epitaxial wafer, and a nitride-type field effect transistor |
| 07/31/2013 | CN103227185A Grid voltage-controlled two-dimensional electron gas quantum box for far infrared communication |
| 07/31/2013 | CN103227177A Pixel strucutre and thin film transistor |
| 07/31/2013 | CN103227172A Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit |
| 07/31/2013 | CN103227151A A semiconductor device with an embedded gate electrode and a method for fabricating the same |
| 07/31/2013 | CN103227150A A display panel and a manufacturing method thereof |
| 07/31/2013 | CN103227148A Production method for array substrate, array substrate and display device |
| 07/31/2013 | CN103227142A Method of pushing back junction isolation semiconductor structure |
| 07/31/2013 | CN103227113A Method of manufacturing vertical planar power MOSFET and method of manufacturing trench-gate power MOSFET |
| 07/31/2013 | CN103227103A Graphene device and method of manufacturing the same |
| 07/31/2013 | CN103227101A Semiconductor devices and methods of manufacture thereof |
| 07/31/2013 | CN102386225B Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof |
| 07/31/2013 | CN102354708B Tunneling field effect transistor structure with suspended source and drain regions and forming method thereof |
| 07/31/2013 | CN102324434B Schottky barrier metal oxide semiconductor (MOS) transistor and preparation method thereof |
| 07/31/2013 | CN102254938B Film transistor, pixel structure including film transistor and circuit structure |
| 07/31/2013 | CN102222609B Impurity concentration distribution control method of semiconductor component and related semiconductor component |
| 07/31/2013 | CN102148255B Grid-control schottky junction field effect transistor with tunneling dielectric layer and formation method |