Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2013
08/14/2013CN203134802U Semiconductor structure
08/14/2013CN203134795U Semiconductor structure
08/14/2013CN203134777U Diode
08/14/2013CN203133452U Array substrate and liquid crystal display device
08/14/2013CN103250256A Oxide material and semiconductor device
08/14/2013CN103250255A Semiconductor device, TFT substrate, and method for manufacturing semiconductor device and TFT substrate
08/14/2013CN103250254A Trench gate power semiconductor device and method for manufacturing same
08/14/2013CN103247698A Capacitor structure and method of forming the same
08/14/2013CN103247697A Decoupling capacitor and integrated circuit provided with same
08/14/2013CN103247696A Tunneling diode rectification device and manufacturing method thereof
08/14/2013CN103247695A Nitride based heterojunction semiconductor device and manufacturing method thereof
08/14/2013CN103247694A Groove Schottky semiconductor device and manufacturing method thereof
08/14/2013CN103247693A Thin film transistor and display panel employing the same
08/14/2013CN103247692A Thin-film transistor, display unit, and electronic apparatus
08/14/2013CN103247691A Thin film transistor
08/14/2013CN103247690A Semiconductor device and flat panel display device having the same
08/14/2013CN103247689A Graphene field effect transistor
08/14/2013CN103247688A Graphene field-effect transistor linearly doped with bi-material gate
08/14/2013CN103247687A Self-aligned contact to III-V material and producing method thereof, FET device and producing method thereof
08/14/2013CN103247686A HVMOS transistor structure having offset distance and method for fabricating the same
08/14/2013CN103247685A Replacement-gate finfet structure and process
08/14/2013CN103247684A Insulated gate bipolar transistor structure having low substrate leakage
08/14/2013CN103247683A Semiconductor device and a method for manufacturing a semiconductor device
08/14/2013CN103247682A Semiconductor device
08/14/2013CN103247681A nano mosfet with trench bottom oxide shielded and third dimensional p-body contact
08/14/2013CN103247680A Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
08/14/2013CN103247679A Bilayer gate dielectric with low equivalent oxide thickness for graphene devices
08/14/2013CN103247678A FINFET structure with novel edge fins
08/14/2013CN103247677A Double-groove MOS (metal oxide semiconductor) device and preparation method thereof
08/14/2013CN103247676A Lateral diffused metal oxide semiconductor field effect transistor and manufacturing method thereof
08/14/2013CN103247675A Heterojunction triode with functions of photoelectric conversion and amplification
08/14/2013CN103247674A PNP pipe parasitized in Sige BiCMOS technique and manufacturing method thereof
08/14/2013CN103247673A Npn triode based on double-quantum-well resonance and tunnelling type and application thereof
08/14/2013CN103247672A Semiconductor device and manufacturing method thereof
08/14/2013CN103247671A Silicon carbide SBD device with blocky floating knot and preparation method thereof
08/14/2013CN103247670A Enclosed and grooved type power semiconductor component and manufacturing method thereof
08/14/2013CN103247669A Double-grid electric charge capturing memory and manufacture method thereof
08/14/2013CN103247668A Thin film transistor
08/14/2013CN103247630A Split-gate device and method of fabricating the same
08/14/2013CN103247629A Nonvolatile memory and manufacturing method thereof
08/14/2013CN103247626A Semi-floating gate device and manufacturing method thereof
08/14/2013CN103247624A Semiconductor structure and manufacturing method thereof
08/14/2013CN103247620A Semiconductor device and a method for manufacturing a semiconductor device
08/14/2013CN103247537A Method of fabricating a FINFET and the FINFET
08/14/2013CN103247535A Dislocation SMT for FinFET device
08/14/2013CN103247532A Thin film transistor, fabricating method thereof and display
08/14/2013CN103247531A Thin film transistor, fabricating method thereof and display
08/14/2013CN103247529A Groove field effect device and manufacturing method thereof
08/14/2013CN103247521A Method for implementing aluminium diffusion on silicon chip and thyristor chip made by same
08/14/2013CN103247519A Low-temperature polycrystalline silicon thin film, thin film transistor, preparing method of thin film and display panel
08/14/2013CN103247517A Semiconductor structure and forming method thereof
08/14/2013CN103247516A Semiconductor structure and forming method thereof
08/14/2013CN102456694B Memory structure
08/14/2013CN102412306B Trench gate JFET and manufacture method thereof
08/14/2013CN102403353B Trench metal oxide semiconductor field-effect transistor and manufacturing method for same
08/14/2013CN102386223B High-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and manufacturing method
08/14/2013CN102386097B Metal oxide semiconductor (MOS) transistor and manufacturing method thereof
08/14/2013CN102376573B NMOS transistor and formation method thereof
08/14/2013CN102339868B Metal semiconductor field effect transistor with inverse isolating layer structure and manufacturing method thereof
08/14/2013CN102324250B Semiconductor device
08/14/2013CN102290434B Metal-semiconductor field effect transistor with under-grid buffer layer structure and manufacturing method
08/14/2013CN102239563B Vertical junction field effect transistors having sloped sidewalls and methods of making same
08/14/2013CN102194884B Field effect transistor of hybrid conduction mechanism
08/14/2013CN102184967B Film transistor
08/14/2013CN102177587B Semiconductor device
08/14/2013CN102119443B Schottky barrier diode and method for manufacturing schottky barrier diode
08/14/2013CN102034818B Semiconductor power device and manufacture method thereof
08/14/2013CN101819936B Improved transistor devices and method of making
08/14/2013CN101510557B Superjunction device having a dielectric termination and methods for manufacturing the device
08/14/2013CN101443916B Apparatus and method for improving drive strength, leakage and stability of deep submicron MOS transistors and memory cells
08/14/2013CN101419980B Microcrystalline semiconductor film, thin film transistor, and display device including thin film transistor
08/14/2013CN101414436B 存储元件和显示装置 Memory element and a display device
08/13/2013USRE44431 Bump-on-lead flip chip interconnection
08/13/2013USRE44430 PMOS depletable drain extension made from NMOS dual depletable drain extensions
08/13/2013USRE44429 Light-emitting semiconductor device having enhanced brightness
08/13/2013US8510618 Error correction in quantum computing system
08/13/2013US8508980 Polarity dependent switch for resistive sense memory
08/13/2013US8508683 Liquid crystal display and panel therefor
08/13/2013US8508682 Peeling method and method for manufacturing display device using the peeling method
08/13/2013US8508517 Electrostatic protection element
08/13/2013US8508193 Environmentally-powered wireless sensor module
08/13/2013US8508054 Enhanced bump pitch scaling
08/13/2013US8508053 Chip package including multiple sections for reducing chip package interaction
08/13/2013US8508046 Circuit substrate and method of manufacturing same
08/13/2013US8508032 Chip packaging
08/13/2013US8508019 Capacitor structure
08/13/2013US8508018 Barrier layers
08/13/2013US8508016 Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
08/13/2013US8508015 Schottky-like contact and method of fabrication
08/13/2013US8508006 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
08/13/2013US8508004 Magnetic element having reduced current density
08/13/2013US8508003 MEMS element and method for manufacturing same
08/13/2013US8508002 Semiconductor device
08/13/2013US8508001 Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same
08/13/2013US8508000 Fin profile structure and method of making same
08/13/2013US8507998 Semiconductor device
08/13/2013US8507991 Semiconductor device and method of manufacturing the same
08/13/2013US8507990 Semiconductor device and manufacturing method of the same
08/13/2013US8507989 Extremely thin semiconductor-on-insulator (ETSOI) FET with a back gate and reduced parasitic capacitance
08/13/2013US8507988 High voltage devices, systems, and methods for forming the high voltage devices
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