| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/11/2013 | CN203192800U Power semiconductor device |
| 09/11/2013 | CN103299448A Method for manufacturing a flexible electronic device using a roll-shaped motherboard, flexible electronic device, and flexible substrate |
| 09/11/2013 | CN103299446A Organic semiconductor material, coating liquid containing the material, and organic thin film transistor |
| 09/11/2013 | CN103299431A Semiconductor device |
| 09/11/2013 | CN103299430A Thin-film transistor and method for manufacturing same |
| 09/11/2013 | CN103299429A Active matrix substrate, method for manufacturing same, and display panel |
| 09/11/2013 | CN103299428A Self-aligned contacts for high k/metal gate process flow |
| 09/11/2013 | CN103299427A A method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain |
| 09/11/2013 | CN103299426A Bipolar junction transistor in silicon carbide with improved breakdown voltage |
| 09/11/2013 | CN103299425A Method of manufacturing semiconductor device |
| 09/11/2013 | CN103299405A Gallium nitride-based semiconductor device and method for producing semiconductor device |
| 09/11/2013 | CN103296090A Metallic oxide thin film transistor and manufacturing method thereof |
| 09/11/2013 | CN103296089A Semiconductor device and method for manufacturing the same |
| 09/11/2013 | CN103296088A Field effect transistor and method of fabricating the same |
| 09/11/2013 | CN103296087A Transistor, method of manufacturing the same, and electronic device including transistor |
| 09/11/2013 | CN103296086A Gate structure for semiconductor device |
| 09/11/2013 | CN103296085A Fin profile structure and method of making same |
| 09/11/2013 | CN103296084A Apparatus and method for finFET |
| 09/11/2013 | CN103296083A Semiconductor field effect transistor and manufacturing method thereof |
| 09/11/2013 | CN103296082A 金属氧化层半导体场效应晶体管 Metal oxide semiconductor field effect transistor |
| 09/11/2013 | CN103296081A Horizontal double-diffusion metallic oxide semiconductor field effect transistor |
| 09/11/2013 | CN103296080A 半导体结构及其形成方法 And a method for forming a semiconductor structure |
| 09/11/2013 | CN103296079A Normally-off compound semiconductor tunnel transistor |
| 09/11/2013 | CN103296078A Enhancement mode GaN HEMT device having grid spacer and method for fabricating GaN HEMT device |
| 09/11/2013 | CN103296077A 半导体结构及其形成方法 And a method for forming a semiconductor structure |
| 09/11/2013 | CN103296076A Planar thyristor and chip and method for manufacturing planar thyristor |
| 09/11/2013 | CN103296075A 半导体器件 Semiconductor devices |
| 09/11/2013 | CN103296074A High-power silicon controlled rectifier |
| 09/11/2013 | CN103296073A 绝缘栅型双极晶体管 Insulated gate bipolar transistors |
| 09/11/2013 | CN103296072A Bipolar transistor with improved break voltage of collector-based open emitter (BVcbc) and production process thereof |
| 09/11/2013 | CN103296071A Grapheme device |
| 09/11/2013 | CN103296070A NAND memory based on nanocrystalline and manufacturing method thereof |
| 09/11/2013 | CN103296069A FinFET and method of fabricating the same |
| 09/11/2013 | CN103296068A Cmos及其形成方法 Cmos and forming method |
| 09/11/2013 | CN103296067A 半导体结构及其形成方法 And a method for forming a semiconductor structure |
| 09/11/2013 | CN103296066A GaN film growing on La0.3Sr1.7AlTaO6 substrate and manufacturing method and application of GaN film |
| 09/11/2013 | CN103296065A Structure for reducing contact resistance of graphene material and metal |
| 09/11/2013 | CN103296064A Thin-film transistor |
| 09/11/2013 | CN103296063A Apparatus and method for high voltage MOS transistor |
| 09/11/2013 | CN103296062A 半导体装置 Semiconductor device |
| 09/11/2013 | CN103296061A Semiconductor device |
| 09/11/2013 | CN103296060A 半导体结构及其制作方法 Semiconductor structure and fabrication method |
| 09/11/2013 | CN103296034A Array substrate, production method thereof and display device |
| 09/11/2013 | CN103296029A Groove-type silicon nanocrystalline memory and manufacturing method thereof |
| 09/11/2013 | CN103296026A Nonvolatile memory device and method of fabricating the same |
| 09/11/2013 | CN103296023A Semiconductor devices and manufacturing and design methods thereof |
| 09/11/2013 | CN103296022A Switching circuit of display panel and display panel |
| 09/11/2013 | CN103296016A 半导体模块 Semiconductor Modules |
| 09/11/2013 | CN103296012A ESD protective system and X-ray flat panel detector |
| 09/11/2013 | CN103295970A Array substrate and manufacturing method thereof and display device |
| 09/11/2013 | CN103295964A Device system structure and preparing method based on mixed crystal orientation SOI and channel stress |
| 09/11/2013 | CN103295911A Power MOSFET (metal-oxide-semiconductor field effect transistor) trench terminal structure and manufacturing method thereof |
| 09/11/2013 | CN103295910A Semiconductor device and method of manufacturing the same |
| 09/11/2013 | CN103295909A Transistor, method of manufacturing the transistor, semiconductor unit, method of manufacturing the semiconductor unit, and display |
| 09/11/2013 | CN103295908A Method for making gate-oxide with step-graded thickness in trenched DMOS device |
| 09/11/2013 | CN103295907A Semiconductor device and method of manufacture thereof |
| 09/11/2013 | CN103295906A Method for manufacturing thin film transistor and thin film transistor |
| 09/11/2013 | CN103295905A Semiconductor device and forming method thereof |
| 09/11/2013 | CN103295904A FinFET design with LDD extensions |
| 09/11/2013 | CN103295902A Finned field-effect tube and forming method thereof |
| 09/11/2013 | CN103295897A Well-through type diode element or diode assembly and method for manufacturing well-through type diode element or diode assembly |
| 09/11/2013 | CN103295888A Semiconductor device and method for manufacturing the same |
| 09/11/2013 | CN103295878A Manufacturing method of multilayer nanowire structure |
| 09/11/2013 | CN103295625A Semiconductor device |
| 09/11/2013 | CN103295543A Noncrystalline silicon gate driver |
| 09/11/2013 | CN102446978B PIN device in bipolar complementary metal oxide semiconductor (BiCMOS) process |
| 09/11/2013 | CN102446965B Germanium-silicon heterojunction bipolar transistor |
| 09/11/2013 | CN102446912B Metal oxide semiconductor transistor ESD (Electrostatic Discharge) protection structure and making method thereof |
| 09/11/2013 | CN102445852B Positive-type photosensitive resin composition and pattern forming method thereof |
| 09/11/2013 | CN102437180B Ultra high voltage silicon germanium heterojunction bipolar transistor (HBT) device and manufacturing method thereof |
| 09/11/2013 | CN102420240B Terminal protection structure of super junction device and manufacturing method of terminal protection structure |
| 09/11/2013 | CN102420105B Process for manufacturing metal-insulator-metal capacitor by using copper damascene process, and structure |
| 09/11/2013 | CN102420103B Copper Damascus process MIM (metal-insulator-metal) capacitor structure and manufacturing process |
| 09/11/2013 | CN102412294B Device used as electric static protection structure |
| 09/11/2013 | CN102412293B 5V PMOS (P-channel Metal Oxide Semiconductor) device in SONOS (Silicon Oxide Nitride Oxide Semiconductor) technique and fabrication method thereof |
| 09/11/2013 | CN102412291B Variable capacitor in SiGe Bi CMOS technology and manufacturing method thereof |
| 09/11/2013 | CN102412280B Lateral parasitic PNP device in silicon-germanium HBT (heterojunction bipolar transistor) technique |
| 09/11/2013 | CN102412272B Vertical parasitic type PNP device in BiCMOS technology |
| 09/11/2013 | CN102403344B Parasitic PNP bipolar transistor in silicon germanium BiCMOS (bipolar complementary metal oxide semiconductor) process |
| 09/11/2013 | CN102403222B Manufacturing method for silicon germanium heterojunction bipolar transistors |
| 09/11/2013 | CN102376762B Super junction LDMOS(Laterally Diffused Metal Oxide Semiconductor) device and manufacturing method thereof |
| 09/11/2013 | CN102318049B Epitaxial substrate for electronic devices and manufacturing method therefor |
| 09/11/2013 | CN102280477B Semiconductor device |
| 09/11/2013 | CN102272889B Epitaxial substrate for electronic device and manufacturing method thereof |
| 09/11/2013 | CN102222702B Capacitor and formation method thereof |
| 09/11/2013 | CN102174712B (al, in, ga)n substrate, manufacturing method thereof, microelectronic or opto-electronic device product |
| 09/11/2013 | CN102160103B 显示装置 The display device |
| 09/11/2013 | CN102130175B 垂直式晶体管结构 Vertical transistor structure |
| 09/11/2013 | CN102074575B IGBT (Insulated Gate Bipolar Translator) device structure and preparation method thereof |
| 09/11/2013 | CN102044569B 电容器及其制造方法 Capacitor and manufacturing method |
| 09/11/2013 | CN102034855B Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof |
| 09/11/2013 | CN101996951B Nonvolatile memory structure and forming method thereof |
| 09/11/2013 | CN101958325B SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory unit and formation method thereof |
| 09/11/2013 | CN101887935B Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 09/11/2013 | CN101790790B High hole mobility p-channel ge transistor structure on si substrate |
| 09/11/2013 | CN101752412B 双极晶体管及其制造方法 Bipolar transistor and its manufacturing method |
| 09/11/2013 | CN101728424B Oxide semiconductor, thin film transistor, and display device |
| 09/11/2013 | CN101064348B Semiconductor device and method for manufacturing the same |
| 09/11/2013 | CN101047190B Nonvolatile semiconductor storage device and method for manufacturing the same |
| 09/10/2013 | US8533639 Optical proximity correction for active region design layout |