Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2013
09/19/2013US20130240973 Non-volatile semiconductor memory device and method of manufacturing the same
09/19/2013US20130240972 Semiconductor device and method of fabricating the same
09/19/2013US20130240970 Nonvolatile semiconductor memory device and method of manufacturing the same
09/19/2013US20130240969 Semiconductor device and method for fabricating semiconductor device
09/19/2013US20130240968 Semiconductor device and method of manufacturing the same
09/19/2013US20130240963 STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain
09/19/2013US20130240959 Semiconductor device and method of fabricating the same
09/19/2013US20130240958 Semiconductor structure and method for forming the same
09/19/2013US20130240957 Method of forming gate dielectric layer and method of fabricating semiconductor device
09/19/2013US20130240956 Semiconductor device and method for fabricating the same
09/19/2013US20130240955 Vertical transistor having edge termination structure
09/19/2013US20130240953 Semiconductor device, pfc circuit, power supply device, and amplifier
09/19/2013US20130240952 Plasma protection diode for a hemt device
09/19/2013US20130240951 Gallium nitride superjunction devices
09/19/2013US20130240950 Semiconductor device having tipless epitaxial source/drain regions
09/19/2013US20130240949 Compound semiconductor device and method for manufacturing the same
09/19/2013US20130240947 Semiconductor device
09/19/2013US20130240912 Semiconductor device
09/19/2013US20130240911 III-Nitride Multi-Channel Heterojunction Device
09/19/2013US20130240910 Bipolar semiconductor device and manufacturing method thereof
09/19/2013US20130240909 Semiconductor device and method for manufacturing semiconductor device
09/19/2013US20130240908 Bidirectional silicon carbide transient voltage supression devices
09/19/2013US20130240906 Sic semiconductor device and manufacturing method thereof
09/19/2013US20130240905 Silicon Carbide Rectifier
09/19/2013US20130240904 Semiconductor device
09/19/2013US20130240903 Method and system for ultra miniaturized packages for transient voltage suppressors
09/19/2013US20130240902 Semiconductor Arrangement
09/19/2013US20130240901 Nitride semiconductor device
09/19/2013US20130240900 Semiconductor device and method for producing the same
09/19/2013US20130240899 Nitride semiconductor device
09/19/2013US20130240898 Group III-V and Group IV Composite Switch
09/19/2013US20130240897 Semiconductor device and method of manufacturing the same
09/19/2013US20130240896 Semiconductor device and method of fabricating semiconductor device
09/19/2013US20130240895 Semiconductor element having high breakdown voltage
09/19/2013US20130240894 Overvoltage Protection Device for Compound Semiconductor Field Effect Transistors
09/19/2013US20130240892 Method for converting semiconductor layers
09/19/2013US20130240885 Semiconductor substrate, and semiconductor chip and stacked semiconductor package having the same
09/19/2013US20130240881 Coating liquid for forming metal oxide thin film, metal oxide thin film, field effect transistor, and method for producing the field effect transistor
09/19/2013US20130240879 Thin film transistor, method of manufacturing the same and flat panel display device having the same
09/19/2013US20130240878 Thin film transistor and display device
09/19/2013US20130240876 Non-polar plane of wurtzite structure material
09/19/2013US20130240875 Semiconductor device and method for manufacturing the same
09/19/2013US20130240874 Layered film including heteroepitaxial pn junction oxide thin film
09/19/2013US20130240873 Semiconductor device
09/19/2013US20130240872 Semiconductor device
09/19/2013US20130240871 Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head
09/19/2013US20130240856 Light-Emitting Element and Display Device
09/19/2013US20130240846 Tft, display apparatus including tft, and organic light-emitting display apparatus including tft
09/19/2013US20130240842 Active matrix dilute source enabled vertical organic light emitting transistor
09/19/2013US20130240838 Increasing carrier injection velocity for integrated circuit devices
09/19/2013US20130240836 FinFET Having Superlattice Stressor
09/19/2013US20130240830 Direct and sequential formation of monolayers of boron nitride and graphene on substrates
09/19/2013US20130240829 Quantum dot structure, method for forming quantum dot structure, wavelength conversion element, light-light conversion device, and photoelectric conversion device
09/19/2013US20130240828 Semiconductor device and method of manufacturing the same
09/19/2013US20130240827 Integrated Circuitry, Switches, and Methods of Selecting Memory Cells of a Memory Device
09/19/2013US20130240802 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
09/19/2013US20130240378 Nanopore device with improved sensitivity and method of fabricating the same
09/19/2013US20130239702 Double Die Sensor
09/19/2013DE112011104403T5 Halbleiterdrucksensor Semiconductor pressure sensor
09/19/2013DE102013204275A1 Halbleiteranordnung Semiconductor device
09/19/2013DE102013204252A1 Halbleiterbauelement Semiconductor device
09/19/2013DE102013102571A1 Halbleitervorrichtung mit geladener struktur und verfahren zur herstellung einer halbleitervorrichtung A semiconductor device with a loaded structure and method of manufacturing a semiconductor device
09/19/2013DE102013102491A1 Halbleitervorrichtung mit hilfsstruktur und verfahren zur herstellung einer halbleitervorrichtung Semiconductor device with an auxiliary structure and process for manufacturing a semiconductor device
09/19/2013DE102013102457A1 Überspannungsschutzeinrichtung für verbindungshalbleiter-feldeffekttransistoren Surge protection device for compound semiconductor-field-effect transistors
09/19/2013DE102012204190B3 Method for manufacturing e.g. p-channel FET, for CPU, involves forming gate electrode structure above crystalline threshold voltage-adjusting layers, and forming drain and source regions of transistor in active region of transistor
09/19/2013DE102012110642B3 Contact structure for low contact resistance to source/drain regions of p-type MOSFET, has germanium-containing dielectric layer placed over elongated materials, and metal film located over germanium-containing dielectric layer
09/19/2013DE102009003920B4 Fin-Feldeffekt-Speicherzellen Fin field effect memory cells
09/18/2013EP2639833A1 High-voltage field-effect transistor and method of making the same
09/18/2013EP2639825A2 Nonvolatile semiconductor memory and method of driving the same
09/18/2013EP2639820A1 Semiconductor device, and method for producing semiconductor device
09/18/2013EP2639818A2 Semiconductor device and manufacturing method thereof
09/18/2013EP2639817A1 Method of fabricating a single-poly floating-gate memory device
09/18/2013EP2639816A1 Method of fabricating a single-poly floating-gate memory device
09/18/2013EP2495578B1 Magnetic sensors
09/18/2013CN203205428U Fast-recovery diode chip
09/18/2013CN203205427U Thin film transistor and array substrate
09/18/2013CN203205426U Lateral transistor
09/18/2013CN203205425U High-efficient groove type insulated gate bipolar transistor IGBT
09/18/2013CN203205424U High-efficient plane insulated gate bipolar transistor IGBT
09/18/2013CN203205423U VDMOS field effect transistor optimized structure
09/18/2013CN103314446A Thin-film transistor substrate and manufacturing method
09/18/2013CN103314445A Transistor including multiple reentrant profiles
09/18/2013CN103314444A Thin film semiconductor device
09/18/2013CN103314443A Semiconductor device manufacturing method and semiconductor device
09/18/2013CN103314438A Nitride semiconductor device
09/18/2013CN103314431A Method of making oxide thin film transistor array, and device incorporating the same
09/18/2013CN103312148A Power management chips and power management devices including the same
09/18/2013CN103311317A Silicon carbide semiconductor device and manufacturing method thereof
09/18/2013CN103311316A Schottky diode and manufacturing method thereof
09/18/2013CN103311315A Fast recovery diode with Schottky contact terminal
09/18/2013CN103311314A Fast recovery diode and method for manufacturing fast recovery diode
09/18/2013CN103311313A Oxide thin film transistor and preparation method thereof
09/18/2013CN103311312A Thin-film field-effect transistor and drive method thereof, array substrate, and display device
09/18/2013CN103311311A Thin film transistor, preparation method and corresponding liquid crystal display
09/18/2013CN103311310A Thin film transistor, preparation method for same and array substrate
09/18/2013CN103311309A Thin film transistor, display equipment and organic light-emitting display apparatus
09/18/2013CN103311308A Thin-film transistor substrate, manufacturing method thereof and display having thin-film transistor substrate
09/18/2013CN103311307A Ge channel metal-oxide-semiconductor field-effect transistor with InAlP cover layer
09/18/2013CN103311306A GeSn channel metal-oxide-semiconductor field-effect transistor with InAlP cover layer
09/18/2013CN103311305A Silicon lateral nanowire multi-faceted gate transistor and production method thereof
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